RS6ON11 - ALPS ELECRIC - Datasheet.Live

6N138,6N139

2014-09-01

TOSHIBA Photocoupler GaAℓAs Ired & Photo IC

6N138, 6N139

Current Loop Driver

Low Input Current Line Receiver

CMOS Logic Interface

The TOSHIBA 6N138 and 6N139 consists of a GaAℓAs infrared emitting

diode coupled with a split-Darlington output configuration.

A high speed GaAℓAs Ired manufactured with an unique LPE junction, has

the virtue of fast rise and fall time at low drive current.

• Isolation voltage: 2500 Vrms (min)

• Current transfer ratio

: 6N138 − 300% (min) (IF=1.6mA)

: 6N139 − 400% (min) (IF=0.5mA)

• Switching time: 6N138 − tPHL = 10μs (max)

− tPLH = 35μs (max)

6N139 − tPHL = 1μs (max)

− tPLH = 7μs (max)

• UL recognized: UL1577, file no. E67349

Pin Configuration (top view)

Schematic

Unit: mm

TOSHIBA 11−10C4

Weight: 0.54 g (typ.)

1 : N.C.

2 : Anode

3 : C athode

4 : N.C.

5 : Gnd

6 : O utput

7 : O utput Base

8 : VCC

VCC

7 GND

ICC

Start of commercial production

1988/02

6N138,6N139

2014-09-01

Absolute Maximum Ratings (*) (Ta = 0°C to + 70°C)

Characteristic Symbol Rating Unit

LED

Forward current (Note 1) IF 20 mA

Pulse forward current IFP(*1)

40 mA

Total pulse forward current IFP(*2)

1 A

Reverse voltage VR 5 V

Diode power dissipation (Note 2) PD 35 mW

Detector

Output current (Note 3) IO 60 mA

Emitter−base reverse voltage VEB 0.5 V

Supply voltage VCC(*3)

−0.5 to 18 V

Output voltage VO(*3)

−0.5 to 18 V

Output power dissipation (Note 4) PO 100 mW

Operating temperature range Topr 0 to 70 °C

Storage temperature range Tstg −55 to 125 °C

Lead solder temperature (10s) (*4) T

sol 260 °C

Isolation voltage (1minute, R.H.≤ 60%) BVS(**)

2500 Vrms

3540 Vdc

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the

significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if

the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum

ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test

report and estimated failure rate, etc.).

(*) JEDEC registered data

(**) Not registered JEDEC

(*1) 50% duty cycle, 1ms pulse width

(*2) Pulse width 1μs, 300pps

(*3) 6N138… −0.5 to 7V

(*4) 1.6mm below seating plane

6N138,6N139

2014-09-01

Electrical Characteristics

Over Recommended Temperature (Ta = 0°C to 70°C, unless otherwise noted)

Characteristic Symbol Test Condition Min (*5)Typ. Max Unit

Current transfer

ratio (Note 5, 6)

6N139

CTR(*)

IF=0.5mA, VO=0.4V

VCC=4.5V 400 800 ⎯

IF=1.6mA, VO=0.4V

VCC=4.5V

500 900 ⎯

6N138 300 600 ⎯

Logic low output

voltage (Note 6)

6N139

VOL

IF=1.6mA, IO=6.4mA

VCC=4.5V ⎯ 0.1 0.4

IF=5mA, IO=15mA

VCC=4.5V ⎯ 0.1 0.4

IF=12mA, IO=24mA

VCC=4.5V ⎯ 0.2 0.4

6N138 IF=1.6mA, IO=4.8mA

VCC=4.5V ⎯ 0.1 0.4

Logic high output

current (Note 6)

6N139

IOH(*)

IF=0mA, VO=VCC=18V ⎯ 0.05 100

μA

6N138 IF=0mA, VO=VCC=7V ⎯ 0.05 250

Logic low supply current

(Note 6)

ICCL IF=1.6mA, VO=Open

VCC=5V ⎯ 0.2 ⎯ mA

Logic high supply current

(Note 6)

ICCH I

F=0mA, VO=Open, VCC=5V ⎯ 10 ⎯ nA

Input forward voltage VF(*) IF=1.6mA, Ta=25°C ⎯ 1.65 1.7 V

Input reverse breakdown voltage BVR(*) IR=10μA, Ta=25°C 5 ⎯ ⎯ V

Temperature coefficient of forward voltage ∆VF / ∆Ta IF=1.6mA ⎯ −1.9 ⎯ mV / °C

Input capacitance CIN f=1MHz, VF=0 ⎯ 60 ⎯ pF

Resistance (input−output) RI−O VI−O=500V (Note 7),

R.H.≤ 60% ⎯ 1012 ⎯ Ω

Capacitance (input−output) CI−O f=1MHz (Note 7) ⎯ 0.6 ⎯ pF

(**) JEDEC registered data.

(*5) All typical values are at Ta=25°C and VCC=5V, unless otherwise noted.

6N138,6N139

2014-09-01

Switching Specifications (Ta=25°C, VCC=5V, unless otherwise specified)

Characteristic Symbol

Test

Circuit Test Condition Min Typ. Max Unit

Propagation delay

time to logic low

at output (Note 6, 8)

6N139

tpHL(*) 1

IF=0.5mA, RL=4.7kΩ ⎯ 5 25

μs

IF=12mA, RL=270Ω ⎯ 0.2 1

6N138 IF=1.6mA, RL=2.2kΩ ⎯ 1 10

Propagation delay

time to logic high

at output (Note 6, 8)

6N139

tpLH(*) 1

IF=0.5mA, RL=4.7kΩ ⎯ 5 60

μs

IF=12mA, RL=270Ω ⎯ 1 7

6N138 IF=1.6mA, RL=2.2kΩ ⎯ 4 35

Common mode transient

immunity at logic high

level output (Note 9)

CMH 2

IF=0mA, RL=2.2kΩ

VCM=400Vp−p ⎯ 500 ⎯ V / μs

Common mode transient

immunity at logic low

level output (Note 9)

CML 2

IF=1.6mA

RL=2.2kΩ

VCM=400Vp−p

⎯ −500 ⎯ V / μs

(*)JEDEC registered data.

(Note 1): Derate linearly above 50°C free−air temperature at a rate of 0.4mA / °C

(Note 2): Derate linearly above 50°C free−air temperature at a rate of 0.7mW / °C

(Note 3): Derate linearly above 25°C free−air temperature at a rate of 0.7mA / °C

(Note 4): Derate linearly above 25°C free−air temperature at a rate of 2.0mW / °C

(Note 5): DC CURRENT TRANSFER RATIO is defined as the ratio of output collector current, IO, to the forward

LED input current, IF, times 100%.

(Note 6): Pin 7 open.

(Note 7): Device considered a two−terminal device: Pins 1, 2, 3, and 4 shorted together and Pins 5, 6, 7 and 8

shorted together.

(Note 8): Use of a resistor between pin 5 and 7 will decrease gain and delay time.

(Note 9): Common mode transient immunity in logic high level is the maximum tolerable (positive) dVCM / dt on

the leading edge of the common mode pulse, VCM, to assure that the output will remain in a logic high

state (i.e. VO > 2.0V).

Common mode transient immunity in Logic Low level is the maximum tolerable (negative) dVCM / dt on

the trailing edge of the common mode pulse signal, VCM, to assure that the output will remain in a logic

low state (i.e. VO < 0.8V).

6N138,6N139

2014-09-01

Test Circuit 1.

(*)CL is approximately 15pF which includes probe

and stray wiring capacitance.

Test Circuit 2.

+5V

CL (*)

VOL

1.5V 1.5V

tpHL

100Ω

10% Duty cycle

1 / f < 100

IFMonito

Pulse gen.

Zo = 50Ω

tf= 5ns

VO 10%

90%

10%

(Saturated

Res

onse

)

(Non-

Saturated

Res

onse

)

tpLH

VOL

Switch at B: IF = 1.6mA

VCM

tr, tf = 0.64μs

400V

90%

10%

Switch at A: IF = 0mA

VFF

Pulse gen

+5V

RCC

+－

VCM

6N138,6N139

2014-09-01

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