INTEGRATED CIRCUITS DATA SHEET 74HC1G66; 74HCT1G66 Bilateral switch Product specification Supersedes data of 2001 Mar 02 2002 May 15 Philips Semiconductors Product specification Bilateral switch 74HC1G66; 74HCT1G66 FEATURES DESCRIPTION * Wide operating voltage range from 2.0 to 9.0 V The 74HC1G/HCT1G66 is a high-speed Si-gate CMOS device. * Very low ON-resistance: - 45 (typical) at VCC = 4.5 V The 74HC1G/HCT1G66 provides an analog switch. The switch has two input/output pins (Y and Z) and an active HIGH enable input pin (E). When pin E is LOW, the analog switch is turned off. - 30 (typical) at VCC = 6.0 V - 25 (typical) at VCC = 9.0 V. * High noise immunity The non standard output currents are equal compared to the 74HC/HCT4066. * Low power dissipation * Very small 5 pins package * Output capability: non standard. QUICK REFERENCE DATA GND = 0 V; Tamb = 25 C; tr = tf = 6.0 ns. TYPICAL SYMBOL PARAMETER CONDITIONS UNIT HC1G HCT1G tPZH/tPZL turn-on time E to Vos CL = 15 pF; RL = 1 k; VCC = 5 V 11 12 ns tPHZ/tPLZ turn-off time E to Vos CL = 15 pF; RL = 1 k; VCC = 5 V 11 12 ns CI input capacitance 1.5 1.5 pF CPD power dissipation capacitance 9 9 pF CS maximum switch capacitance 8 8 pF notes 1 and 2 Notes 1. CPD is used to determine the dynamic power dissipation (PD in W). PD = CPD x VCC2 x fi + ((CL +CS)x VCC2 x fo) where: fi = input frequency in MHz; fo = output frequency in MHz; CL = output load capacitance in pF; CS = maximum switch capacitance in pF; VCC = supply voltage in Volts; ((CL +CS)x VCC2 x fo) = sum of outputs. 2. For HC1G the condition is VI = GND to VCC. For HCT1G the condition is VI = GND to VCC - 1.5 V. FUNCTION TABLE See note 1. INPUT E SWITCH L OFF H ON Note 1. H = HIGH voltage level; L = LOW voltage level. 2002 May 15 2 Philips Semiconductors Product specification Bilateral switch 74HC1G66; 74HCT1G66 ORDERING INFORMATION PACKAGE OUTSIDE NORTH AMERICA 74HC1G66GW TEMPERATURE RANGE PINS PACKAGE MATERIAL CODE MARKING -40 to +125 C 5 SC-88A plastic SOT353 HL 74HCT1G66GW -40 to +125 C 5 SC-88A plastic SOT353 TL 74HC1G66GV -40 to +125 C 5 SC-74A plastic SOT753 H66 74HCT1G66GV -40 to +125 C 5 SC-74A plastic SOT753 T66 PINNING PIN SYMBOL DESCRIPTION 1 Y independent input/output Y 2 Z independent input/output Z 3 GND ground (0 V) 4 E enable input E (active HIGH) 5 VCC supply voltage handbook, halfpage Y 1 handbook, halfpage 5 VCC Z 2 4 66 Y E Z GND 3 4 1 2 E MNA075 MNA074 Fig.1 Pin configuration. Fig.2 Logic symbol. Y handbook, halfpage E handbook, halfpage 1 4 # 1 1 2 VCC X1 VCC MNA076 GND Fig.3 IEC logic symbol. 2002 May 15 Fig.4 Logic diagram. 3 Z MNA077 Philips Semiconductors Product specification Bilateral switch 74HC1G66; 74HCT1G66 RECOMMENDED OPERATING CONDITIONS 74HC1G66 SYMBOL PARAMETER 74HCT1G66 CONDITIONS UNIT MIN. TYP. MAX. MIN. TYP. MAX. VCC supply voltage 2.0 5.0 10.0 4.5 5.0 5.5 V VI input voltage GND - VCC GND - VCC V VS switch voltage GND - VCC GND - VCC V Tamb operating ambient temperature see DC and AC characteristics per device -40 - +125 -40 - +125 C tr, tf input rise and fall times VCC = 2.0 V - - 1000 - - - ns VCC = 4.5 V - 6.0 500 - 6.0 500 ns VCC = 6.0 V - - 400 - - - ns VCC = 10.0 V - - 250 - - - ns LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134); voltages are referenced to GND (ground = 0 V); see note 1. SYMBOL PARAMETER CONDITIONS MIN. -0.5 MAX. +11.0 UNIT VCC supply voltage V IIK input diode current VI < - 0.5 V or VI > VCC + 0.5 V - 20 mA ISK switch diode current VS < - 0.5 V or VS > VCC + 0.5 V - 20 mA IS switch source or sink current -0.5 V < VS < VCC + 0.5 V - 25 mA ICC VCC or GND current - 50 mA Tstg storage temperature -65 +150 C PD power dissipation per package - 200 mW PS power dissipation per switch - 100 mW for temperature range from -40 to + 125 C; note 2 Notes 1. To avoid drawing VCC current out of pin Z, when switch current flows in pin Y, the voltage drop across the bidirectional switch must not exceed 0.4 V. If the switch current flows into pin Z, no VCC current will flow out of terminal Y. In this case there is no limit for the voltage drop across the switch, but the voltage at pins Y and Z may not exceed VCC or GND. 2. Above 55 C the value of PD derates linearly with 2.5 mW/K. 2002 May 15 4 Philips Semiconductors Product specification Bilateral switch 74HC1G66; 74HCT1G66 DC CHARACTERISTICS Family 74HC1G66 At recommended operating conditions; voltages are referenced to GND (ground = 0 V). TEST CONDITIONS SYMBOL VIL ILI IS ICC -40 to +85 PARAMETER OTHER VIH Tamb (C) HIGH-level input voltage LOW-level input voltage VCC (V) MIN. TYP.(1) -40 to +125 MAX. MIN. UNIT MAX. 2.0 1.5 1.2 - 1.5 - V 4.5 3.15 2.4 - 3.15 - V 6.0 4.2 3.2 - 4.2 - V 9.0 6.3 4.7 - 6.3 - V 2.0 - 0.8 0.5 - 0.5 V 4.5 - 2.1 1.35 - 1.35 V 6.0 - 2.8 1.8 - 1.8 V 9.0 - 4.3 2.7 - 2.7 V 6.0 - 0.1 1.0 - 1.0 A 10.0 - 0.2 2.0 - 2.0 A VI = VIH or VIL; VS = VCC - GND; see Fig.6 10.0 - 0.1 1.0 - 1.0 A analog switch current, ON-state VI = VIH or VIL; VS = VCC - GND; see Fig.7 10.0 - 0.1 1.0 - 1.0 A quiescent supply current VI = VCC or GND; Vis = GND or VCC; Vos = VCC or GND 6.0 - 1.0 10 - 20 A 10.0 - 2.0 20 - 40 A input leakage current VI = VCC or GND analog switch current, OFF-state Note 1. All typical values are measured at Tamb = 25 C. 2002 May 15 5 Philips Semiconductors Product specification Bilateral switch 74HC1G66; 74HCT1G66 Family 74HCT1G66 At recommended operating conditions; voltages are referenced to GND (ground = 0 V). TEST CONDITIONS SYMBOL Tamb (C) -40 to +85 PARAMETER VCC (V) OTHER MIN. TYP.(1) MAX. -40 to +125 MIN. MAX. UNIT VIH HIGH-level input voltage 4.5 to 5.5 2.0 1.6 - 2.0 - V VIL LOW-level input voltage 4.5 to 5.5 0.1 1.2 0.8 - 0.8 V ILI input leakage current VI = VCC or GND 5.5 - 0.1 1.0 - 1.0 A IS analog switch current, OFF-state VI = VIH or VIL; VS = VCC - GND; see Fig.6 5.5 - 0.1 1.0 - 1.0 A analog switch current, ON-state VI = VIH or VIL; VS = VCC - GND; see Fig.7 5.5 - 0.1 1.0 - 1.0 A ICC quiescent supply current VI = VCC or GND; Vis = GND or VCC; Vos = VCC or GND 4.5 to 5.5 - 1 10 - 20 A ICC additional supply current per input VI = VCC - 2.1 V 4.5 to 5.5 - - 500 - 850 A Note 1. All typical values are measured at Tamb = 25 C. 2002 May 15 6 Philips Semiconductors Product specification Bilateral switch 74HC1G66; 74HCT1G66 Family 74HC1G66 and 74HCT1G66 For 74HC1G66: VCC = 2.0, 4.5, 6.0 or 9.0 V; note 1. For 74HCT1G66: VCC = 4.5 V. TEST CONDITIONS SYMBOL PARAMETER OTHER RON ON-resistance (peak) ON-resistance (rail) Vis = VCC to GND; VI = VIH or VIL; see Fig.5 Vis = GND; VI = VIH or VIL; see Fig.5 Vis = VCC; VI = VIH or VIL; see Fig.5 VCC (V) Tamb (C) -40 to +85 -40 to +125 UNIT IS (A) MIN. TYP.(2) MAX. MIN. MAX. 2.0 100 - - - - - 4.5 1000 - 42 118 - 142 6.0 1000 - 31 105 - 126 9.0 1000 - 23 88 - 105 2.0 100 - 75 - - - 4.5 1000 - 29 95 - 115 6.0 1000 - 23 82 - 100 9.0 1000 - 18 70 - 80 2.0 100 - 75 - - - 4.5 1000 - 35 106 - 128 6.0 1000 - 27 94 - 113 9.0 1000 - 21 78 - 95 Notes 1. At supply voltages approaching 2 V, the analog switch ON-resistance becomes extremely non-linear. Therefore it is recommended that these devices be used to transmit digital signals only, when using this supply voltage. 2. All typical values are measured at Tamb = 25 C. 2002 May 15 7 Philips Semiconductors Product specification Bilateral switch 74HC1G66; 74HCT1G66 LOW (from enable input) HIGH (from enable inputs) V Y Y Z Z Vis = 0 to VCC - GND A A VI = VCC or GND VO = GND or VCC Iis GND GND MNA078 Fig.5 MNA079 Test circuit for measuring ON-resistance (RON). Fig.6 Test circuit for measuring OFF-state current. MNA081 80 handbook, halfpage RON () HIGH (from enable input) 60 Y VCE = 4.5 V Z 40 A A VI = VCC or GND VO (open circuit) 6.0 V 9.0 V 20 GND MNA080 0 0 Fig.8 Fig.7 Test circuit for measuring ON-state current. 2002 May 15 8 2 4 6 6 V (V) 10 is Typical ON-resistance (RON) as a function of input voltage (Vis) for Vis = 0 to VCC. Philips Semiconductors Product specification Bilateral switch 74HC1G66; 74HCT1G66 AC CHARACTERISTICS Type 74HC1G66 GND = 0 V; tr = tf = 6 ns. Tamb (C) TEST CONDITIONS SYMBOL WAVEFORMS tPHL/tPLH tPZH/tPZL tPHZ/tPLZ -40 to +85 PARAMETER propagation delay Vis to Vos turn-on time E to Vos turn-off time E to Vos RL = ; CL = 50 pF; see Fig.12 VCC (V) MIN. -40 to +125 TYP.(1) MAX. MIN. UNIT MAX. 2.0 - 8 75 - 90 ns 4.5 - 3 15 - 18 ns 6.0 - 2 13 - 15 ns 9.0 - 1 10 - 12 ns RL = 1 k; CL = 50 pF; 2.0 see Figs 13 and 14 4.5 - 50 125 - 150 ns - 16 25 - 30 ns 6.0 - 13 21 - 26 ns 9.0 - 9 16 - 20 ns RL = 1 k; CL = 50 pF: 2.0 see Figs 13 and 14 4.5 - 27 190 - 225 ns - 16 38 - 45 ns 6.0 - 14 33 - 38 ns 9.0 - 12 16 - 20 ns Note 1. All typical values are measured at Tamb = 25 C. Type 74HCT1G66 GND = 0 V; tr = tf = 6 ns; Vis is the input voltage at pins Y or Z, whichever is assigned as an input. Vos is the output voltage at pins Y or Z, whichever is assigned as an output. TEST CONDITIONS SYMBOL Tamb (C) -40 to +85 PARAMETER WAVEFORMS VCC (V) MIN. -40 to +125 TYP.(1) MAX. MIN. UNIT MAX. tPHL/tPLH propagation delay Vis to Vos RL = ; CL = 50 pF; see Fig.12. 4.5 - 3 15 - 18 ns tPZH/tPZL turn-on time E to Vos RL = 1 k; CL = 50 pF; 4.5 see Figs 15 and 16. - 15 30 - 36 ns tPHZ/tPLZ turn-off time E to Vos RL = 1 k; CL = 50 pF; 4.5 see Figs 15 and 16. - 13 44 - 53 ns Note 1. All typical values are measured at Tamb = 25 C. 2002 May 15 9 Philips Semiconductors Product specification Bilateral switch 74HC1G66; 74HCT1G66 Type 74HC1G66 and 74HCT1G66 At recommended conditions and typical values. GND = 0 V; tr = tf = 6.0 ns. Vis is the input voltage at pins Y or Z, whichever is assigned as an input; Vos is the output voltage at pins Y or Z, whichever is assigned as an output. SYMBOL PARAMETER TEST CONDITIONS Vis(p-p) (V) sine-wave distortion f = 1 kHz RL = 10 k; CL = 50 pF; see Fig.12 sine-wave distortion f = 10 kHz RL = 10 k; CL = 50 pF; see Fig.12 switch OFF signal feed-through RL = 600 ; CL = 50 pF; f = 1 MHz; see Figs 9 and 13 note 1 fmax minimum frequency response (-3 dB) RL = 50 ; CL = 10 pF; see Figs 10 and 11 note 2 CS maximum switch capacitance UNIT 4.0 4.5 0.04 % 9.0 0.02 % 4.0 4.5 0.12 % 8.0 9.0 0.06 % 1. Adjust input voltage Vis is 0 dBm level (0 dBM = 1 mW into 600 ). 2. Adjust input voltage Vis is 0 dBm level at Vos for 1 MHz (0 dBM = 1 mW into 50 ). 10 TYP. 8.0 Notes 2002 May 15 VCC (V) 4.5 -50 dB 9.0 -50 dB 4.5 180 MHz 9.0 200 MHz 8 pF Philips Semiconductors Product specification Bilateral switch 74HC1G66; 74HCT1G66 MNA082 0 handbook, full pagewidth (dB) -20 -40 -60 -80 -100 10 102 103 104 105 f (kHz) 106 Test conditions: VCC = 4.5 V; GND = 0 V; RL = 50 ; RSOURCE = 1 k. Fig.9 Typical switch OFF signal feed-through as a function of frequency. MNA083 5 handbook, full pagewidth (dB) 0 -5 10 102 103 104 Test conditions: VCC = 4.5 V; GND = 0 V; RL = 50 ; RSOURCE = 1 k. Fig.10 Typical frequency response. 2002 May 15 11 105 f (kHz) 106 Philips Semiconductors Product specification Bilateral switch 74HC1G66; 74HCT1G66 VCC handbook, full pagewidth 0.1 F Vis sine-wave 2RL Y/Z Z/Y 2RL Vos CL dB channel ON GND MNA084 Adjust input voltage to obtain 0 dBm at Vos when fin = 1 MHz. After set-up, frequency of fin is increased to obtain a reading of -3 db at Vos. Fig.11 Test circuit for measuring minimum frequency response. VCC handbook, full pagewidth 10 F Vis 2RL Y/Z Z/Y fin = 1 kHz sine-wave 2RL channel ON CL Vos DISTORTION METER GND MNA085 Fig.12 Test circuit for measuring sine-wave distortion. VCC handbook, full pagewidth 0.1 F Vis 2RL Y/Z Z/Y 2RL Vos CL dB channel OFF GND MNA086 Fig.13 Test circuit for measuring switch OFF signal feed-through. 2002 May 15 12 Philips Semiconductors Product specification Bilateral switch 74HC1G66; 74HCT1G66 AC WAVEFORMS VI VM(1) E INPUT handbook, halfpageVI GND VM(1) Vis tPLZ tPZL VCC OUTPUT LOW-to-OFF OFF-to-LOW GND tPLH tPHL VM(1) VX(2) VOH(2) tPHZ VM(1) Vos VOL(2) tPZH VY(3) OUTPUT HIGH-to-OFF OFF-to-HIGH MNA087 VM(1) GND outputs enabled outputs enabled outputs disabled MNA088 (1) For HC1G VM = 50% For HCT1G VM = 1.3 V. (2) VOL and VOH are the typical output voltage drop that occur with the output load. (1) For HC1G VM = 50%; VI = GND to VCC For HCT1G VM = 1.3 V; VI = GND to 3.0 V. (2) VX = 10% of signal amplitude. (3) VY = 90% of signal amplitude. Fig.14 The input (Vis) to output (Vos) propagation delays. VCC handbook, halfpage PULSE GENERATOR Fig.15 The turn-on and turn-off times. VI VO D.U.T. CL 50 pF RT tW VCC RL = 1 k S1 open AMPLITUDE 90% NEGATIVE INPUT PULSE (1) VM 10% MNA090 0V tTHL (tf) tTLH (tr) tTLH (tr) tTHL (tf) AMPLITUDE 90% POSITIVE INPUT PULSE Definitions for test circuit: CL = load capacitance including jig and probe capacitance (see "AC characteristics" for values) RT = termination resistance should be equal to the output impedance Zo of the pulse generator. TEST VM 10% 0V tW MNA089 S1 tPLH/tPHL open tPLZ/tPZL VCC tPHZ/tPZH GND tr = tf = 6 ns, when measuring fmax, there is no constraint on tr, tf with 50% duty factor. (1) For HC1G66: VM = 50%; VI = GND to VCC For HCT1G66: VM = 1.3 V; VI = GND to 3.0 V. Fig.16 Test circuit for measuring AC performance. 2002 May 15 (1) Fig.17 Input pulse definitions. 13 Philips Semiconductors Product specification Bilateral switch 74HC1G66; 74HCT1G66 PACKAGE OUTLINES Plastic surface mounted package; 5 leads SOT353 D E B y X A HE 5 v M A 4 Q A A1 1 2 e1 3 bp c Lp w M B e detail X 0 1 2 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A1 max bp c D E (2) e e1 HE Lp Q v w y mm 1.1 0.8 0.1 0.30 0.20 0.25 0.10 2.2 1.8 1.35 1.15 1.3 0.65 2.2 2.0 0.45 0.15 0.25 0.15 0.2 0.2 0.1 OUTLINE VERSION SOT353 2002 May 15 REFERENCES IEC JEDEC EIAJ SC-88A 14 EUROPEAN PROJECTION ISSUE DATE 97-02-28 Philips Semiconductors Product specification Bilateral switch 74HC1G66; 74HCT1G66 Plastic surface mounted package; 5 leads SOT753 D E B y A X HE 5 v M A 4 Q A A1 c 1 2 3 Lp detail X bp e w M B 0 1 2 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A1 bp c D E e HE Lp Q v w y mm 1.1 0.9 0.100 0.013 0.40 0.25 0.26 0.10 3.1 2.7 1.7 1.3 0.95 3.0 2.5 0.6 0.2 0.33 0.23 0.2 0.2 0.1 OUTLINE VERSION SOT753 2002 May 15 REFERENCES IEC JEDEC JEITA SC-74A 15 EUROPEAN PROJECTION ISSUE DATE 02-04-16 Philips Semiconductors Product specification Bilateral switch 74HC1G66; 74HCT1G66 SOLDERING If wave soldering is used the following conditions must be observed for optimal results: Introduction to soldering surface mount packages * Use a double-wave soldering method comprising a turbulent wave with high upward pressure followed by a smooth laminar wave. This text gives a very brief insight to a complex technology. A more in-depth account of soldering ICs can be found in our "Data Handbook IC26; Integrated Circuit Packages" (document order number 9398 652 90011). * For packages with leads on two sides and a pitch (e): - larger than or equal to 1.27 mm, the footprint longitudinal axis is preferred to be parallel to the transport direction of the printed-circuit board; There is no soldering method that is ideal for all surface mount IC packages. Wave soldering can still be used for certain surface mount ICs, but it is not suitable for fine pitch SMDs. In these situations reflow soldering is recommended. - smaller than 1.27 mm, the footprint longitudinal axis must be parallel to the transport direction of the printed-circuit board. Reflow soldering The footprint must incorporate solder thieves at the downstream end. Reflow soldering requires solder paste (a suspension of fine solder particles, flux and binding agent) to be applied to the printed-circuit board by screen printing, stencilling or pressure-syringe dispensing before package placement. * For packages with leads on four sides, the footprint must be placed at a 45 angle to the transport direction of the printed-circuit board. The footprint must incorporate solder thieves downstream and at the side corners. Several methods exist for reflowing; for example, convection or convection/infrared heating in a conveyor type oven. Throughput times (preheating, soldering and cooling) vary between 100 and 200 seconds depending on heating method. During placement and before soldering, the package must be fixed with a droplet of adhesive. The adhesive can be applied by screen printing, pin transfer or syringe dispensing. The package can be soldered after the adhesive is cured. Typical reflow peak temperatures range from 215 to 250 C. The top-surface temperature of the packages should preferable be kept below 220 C for thick/large packages, and below 235 C for small/thin packages. Typical dwell time is 4 seconds at 250 C. A mildly-activated flux will eliminate the need for removal of corrosive residues in most applications. Manual soldering Wave soldering Fix the component by first soldering two diagonally-opposite end leads. Use a low voltage (24 V or less) soldering iron applied to the flat part of the lead. Contact time must be limited to 10 seconds at up to 300 C. Conventional single wave soldering is not recommended for surface mount devices (SMDs) or printed-circuit boards with a high component density, as solder bridging and non-wetting can present major problems. When using a dedicated tool, all other leads can be soldered in one operation within 2 to 5 seconds between 270 and 320 C. To overcome these problems the double-wave soldering method was specifically developed. 2002 May 15 16 Philips Semiconductors Product specification Bilateral switch 74HC1G66; 74HCT1G66 Suitability of surface mount IC packages for wave and reflow soldering methods SOLDERING METHOD PACKAGE(1) WAVE BGA, LBGA, LFBGA, SQFP, TFBGA, VFBGA not suitable suitable(3) HBCC, HBGA, HLQFP, HSQFP, HSOP, HTQFP, HTSSOP, HVQFN, HVSON, SMS not PLCC(4), SO, SOJ suitable LQFP, QFP, TQFP SSOP, TSSOP, VSO REFLOW(2) suitable suitable suitable not recommended(4)(5) suitable not recommended(6) suitable Notes 1. For more detailed information on the BGA packages refer to the "(LF)BGA Application Note" (AN01026); order a copy from your Philips Semiconductors sales office. 2. All surface mount (SMD) packages are moisture sensitive. Depending upon the moisture content, the maximum temperature (with respect to time) and body size of the package, there is a risk that internal or external package cracks may occur due to vaporization of the moisture in them (the so called popcorn effect). For details, refer to the Drypack information in the "Data Handbook IC26; Integrated Circuit Packages; Section: Packing Methods". 3. These packages are not suitable for wave soldering. On versions with the heatsink on the bottom side, the solder cannot penetrate between the printed-circuit board and the heatsink. On versions with the heatsink on the top side, the solder might be deposited on the heatsink surface. 4. If wave soldering is considered, then the package must be placed at a 45 angle to the solder wave direction. The package footprint must incorporate solder thieves downstream and at the side corners. 5. Wave soldering is suitable for LQFP, TQFP and QFP packages with a pitch (e) larger than 0.8 mm; it is definitely not suitable for packages with a pitch (e) equal to or smaller than 0.65 mm. 6. Wave soldering is suitable for SSOP and TSSOP packages with a pitch (e) equal to or larger than 0.65 mm; it is definitely not suitable for packages with a pitch (e) equal to or smaller than 0.5 mm. 2002 May 15 17 Philips Semiconductors Product specification Bilateral switch 74HC1G66; 74HCT1G66 DATA SHEET STATUS DATA SHEET STATUS(1) PRODUCT STATUS(2) DEFINITIONS Objective data Development This data sheet contains data from the objective specification for product development. Philips Semiconductors reserves the right to change the specification in any manner without notice. Preliminary data Qualification This data sheet contains data from the preliminary specification. Supplementary data will be published at a later date. Philips Semiconductors reserves the right to change the specification without notice, in order to improve the design and supply the best possible product. Product data Production This data sheet contains data from the product specification. Philips Semiconductors reserves the right to make changes at any time in order to improve the design, manufacturing and supply. Changes will be communicated according to the Customer Product/Process Change Notification (CPCN) procedure SNW-SQ-650A. Notes 1. Please consult the most recently issued data sheet before initiating or completing a design. 2. The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com. DEFINITIONS DISCLAIMERS Short-form specification The data in a short-form specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook. Life support applications These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips Semiconductors customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application. Limiting values definition Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 60134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Right to make changes Philips Semiconductors reserves the right to make changes, without notice, in the products, including circuits, standard cells, and/or software, described or contained herein in order to improve design and/or performance. Philips Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no licence or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise specified. Application information Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors make no representation or warranty that such applications will be suitable for the specified use without further testing or modification. 2002 May 15 18 Philips Semiconductors Product specification Bilateral switch 74HC1G66; 74HCT1G66 NOTES 2002 May 15 19 Philips Semiconductors - a worldwide company Contact information For additional information please visit http://www.semiconductors.philips.com. Fax: +31 40 27 24825 For sales offices addresses send e-mail to: sales.addresses@www.semiconductors.philips.com. SCA74 (c) Koninklijke Philips Electronics N.V. 2002 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Printed in The Netherlands 613508/03/pp20 Date of release: 2002 May 15 Document order number: 9397 750 09723