SYMBOLS & CODES EXPLAINED j p 7 e 4 . { i a i ( i . . [A G n LINE TYPE [DEVICE Vp. BVdss (BVgss _| \ass Igss@ ND] COMMON SOURCE/ Rds | MAX. | IN STRUC|Y200 (EO No. No. [DISS @ | | Id Ig |Vgs=0O8 we pi Vgs /Vds gfs Yos Cis FREE |MAX|-TURE | s/a jAD @25C |ld=0 |Vds | Vds>Vp!& mhos. AIR [TEMP T0200/D E w) | (vy | ty) Vv} | tA) | A A Vv MAX ee C Ser. v- Matched Type, also listed in STRUCTURE Section 13, Category 6 A typical afg D ~ Diffused @ Phototransistor, also listed in Pulsed E Epitaxial tooe bonr ae ; % High Frequency (Yes) Ge GermaniumPE 5 (i- Yes PE Planar Epitaxial PL Planar eet tg: . # Junction Type A With infinite heat sink A_y - Y, * Insulated Gate (MOS Type) T Above 28C; For additional is 9 _ Matched pair or dual information, consult manufacturer. + Not at given test conditions A Switching, other uses % Maximum Zw Chopper, Other uses + * Pulsed D Noise figure 8db or below VgglCut off} mi fT = Plastic Package A. Vogt Threshold) Vv H Hometaxial % Typical % Maximum $ Tetrode # Mini A Not given at test conditions % Insulated Gate (MNOS Type} - imimum R [_# = Mini T Rosion) # Vps * A Depletion Mode, Type A $ Depletion-Enhancement Mode, Type B x Enhancement Mode, Type C a A - BYv T- sv bso DSX A pss @ Ves = Qand Vos Vp Ves 790 Minimum Typical Pulsed ON e+ P+ , (Output Shorted) Not given at test conditions Typical Cass Cag0 g-c igs JJunction $Storage AAmbient CCase A Phototransistor Device A Tetrode Device % Composite Type BYngo ! Lo mE al ks esaleain M wa Re aay alg we TYPE No. fT - 40 # g0c * 45C $ 100c # 50 D Free Air Zz 60C y Typical Vatue 75C A- > 100C Symbols indicate temperature at which derating starts. A Q With infinite heat sink Following symbols indicate temp W Power at which derating starts: Output f- 40% (- ec % gor * 45C ~- 70C A Pulsed #- 50% $$ - 100C %_ min * 0-65C A Ambient @ 70-80 C Case # 85-100C J Junction # 110-125C S Storage 130-135C ~ 140-165C 170-200C v Over 200C D - te . $ Minimum # Pulsed or Peak a T At temperature 25C Case D- 1, # Pulsed $ Minimum aE t sraucly indicated Maximum tyt % * Ton t, # ~ ts QD ~ AtVog < Max. Veg (see mfr. spec.) FT - ttt * Tote # Icex ky A - rs * = Ton * Toft 1 cer CEO) CES @ AtTemp. 25C Case Vv Typical Value # Pulsed $ Typical tT AtTemp. > 25C # Rated max. operating frequency f # BV __ or punch-through t <b x a Gain bandwidth product (ft) Q- BV ces * Pulsed A- 1 * Maximum frequency of oscillation g BV BVsoisus) B-1 Q Figure of merit (frequency for CER $ Minimum B unity power gain) op A Minimum Z- Maximum 7 At Temp. 25C Case fon a $ Minimum ~~ "fe * ~ Available to # Pulsed selected range $ ~ Tetrode Typical narrower than # Radiation Resistant Device (Also see top of reverse side of card.)76 A190 A390t BSV38t CM600 CM603 DN3367A DN3370A DN3438A ON3460A MD1F3459 MD1F4416 $1221N $I224N SI244N $U2076 v $U2079 v u206 U204 U207 UC120 uc258 UT100 HSC4392t HSC4416A HSC5457A HSC5459 HSC5485 HSC5639t ZFT12A ZFT16 LDF604 LDF692t NKT80212 NKT80215 NPC212N NPC215N Vv DISS @ @25C |Id=0 | Vds 300m |4.0t | 154! 30 300m |5.0A {| 10*| 25 15 | 25 300m 1.54 |3.0A 300m [1.5 |1.54 |5.0A4 300m (2.2 | 20 300m {3.2 | 20 300m [2.3 | 20 300m |1.8 | 20 300m |4. 20 300m (6. 15 * 300m 5.0 300m 300m 300m 300m 300m 300m 300m 300m 300m 300m 310m 310m 310m 310m 310m 310m 350m 350m 360m 360m 360m |.70 |5.0 360m 12.5 |5.0 360m |.70% [5.0 360m [2.5% [5.0 D.A.T.A. Ig 30 10m|5.0m 35A| 30m 25 1150m; 10m 104 | 100m| 100m 15A | 100m| 100m 40 10m 40 10m 50 50 30m| 10m 50m 10m 10m 200u | 180u 200u |1.8m @ |igss@ Vgs=O0&Vgs>V Vds>Vp/&Vds= 8.0m |.10n 10n 10p m 50m 50p 50m*%3.0n 100mA%3.0n 25m m .60m 1.0m 1.0m 15m .30m 5m 3.0m 300u 5m 3.0m gs 0.0 IN ORDER OF (1) DISSIPATION Cis 9p 5.0p# 300 t |5.5p 25 05m |.25m 1Omt| 30m O6KA |6.5pt 5p 20mt| 60m 30 A |6.5pt : p 10m |1.0m 10u 15p . m 30m (2.5m 15u 20p -5m . 0m 14.5m |5.0u 18p Sm 80m /4.5m |5.0u 18p m 1.5m |6.0m 20u 18 u 7.5mt | 50u m 1.2m m 3.6m 15mt 6 }1.0m 1.2kt |5.0p% 12m | 24m | 50u 1 6.0m 10m |200u8 am . 4.5m%/|7.5m% 1.0m |.0m wm am 2.0m {6.0m 3.5m |7.0m 300 ft 150u% 5. 16p 23p p 23p p 25p p 25p SYMBOLS AND CODES EXPLAINED IN INTERPRETER p# 30p* * IN C-/200 jE 0 TURE P FREE AIR em 1.0m 1.6m 2.4m s/a |AD T0200|D E TO72 |DH TO72 |DZ u51 G TO18 /|DD TO18 TO18 TO18 T018 TO18 |D T0122/GP TO122/GP TO72 TO72 TO18 L21 L21 76