IC
,
nom 75 A
IC105 A
min. typ. max.
- 1,7 2,15 V
- 2,0 - V
mA
VCE= 1200V, VGE= 0V, Tvj= 25°C
Gateladung VGE= -15V...+15V QG -
gate charge
nF - 0,2
collector emitter cut off current ICES
Rückwirkungskapazität
reverse transfer capacitance f= 1MHz, Tvj= 25°C, VCE= 25V, VGE= 0V
Kollektor Emitter Reststrom
Cres
Eingangskapazität
input capacitance f= 1MHz, Tvj= 25°C, VCE= 25V, VGE= 0V
prepared by: MOD-D2; M. Münzer
VGES
revision: 3.0
2,5
5,0 5,8
Transistor Wechselrichter / transistor inverter
date of publication: 2002-09-03
Kollektor Emitter Sättigungsspannung IC= 75A, VGE= 15V, Tvj= 25°C
collector emitter saturation voltage
A
Isolations Prüfspannung
insulation test voltage RMS, f= 50Hz, t= 1min: VISOL
ICRM
Ptot 350
repetitive peak forward current
kV
VR= 0V, tp= 10ms, Tvj= 125°C
Technische Information / technical information
FS75R12KE3
IGBT-Module
IGBT-Modules
VCES
Periodischer Spitzenstrom
Gesamt Verlustleistung
total power dissipation
Gate Emitter Spitzenspannung
VCEsat
Charakteristische Werte / characteristic values
approved: SM TM; Robert Severin
IC= 75A, VGE= 15V, Tvj= 125°C
Gate Schwellenspannung IC= 3,0mA, VCE= VGE, Tvj= 25°C
gate threshold voltage
1200 V
Elektrische Eigenschaften / electrical properties
Höchstzulässige Werte / maximum rated values
Kollektor Emitter Sperrspannung
Tc= 80°CKollektor Dauergleichstrom
collector emitter voltage Tvj= 25°C
Tc= 25°CDC collector current
W
V
gate emitter peak voltage
150
Dauergleichstrom IF75
Tc= 25°C; Transistor
repetitive peak collector current tp= 1ms, Tc= 80°C
Periodischer Kollektor Spitzenstrom
A
DC forward current
+20
1200 A²s
tp= 1ms IFRM 150 A
Grenzlastintegral
V
nF5,3 -
0,7 - µC
IGES - 400
6,5
-
-
- 5-
-
I²t value I²t
VGE(th)
Cies
nA
gate emitter leakage current
Gate Emitter Reststrom VCE= 0V, VGE= 20V, Tvj= 25°C
1 (8) DB_FS75R12KE3_3.0 .xls
2002-09-03
Technische Information / technical information
FS75R12KE3
IGBT-Module
IGBT-Modules
min. typ. max.
- 0,26 - µs
- 0,29 - µs
- 0,03 - µs
- 0,05 - µs
- 0,42 - µs
- 0,52 - µs
- 0,07 - µs
- 0,09 - µs
- 1,65 2,15 V
- 1,65 - V
- 90 - A
- 96 - A
- 7,4 - µC
- 13,5 - µC
- 3,0 - mJ
- 5,5 - mJ
VR= 600V, VGE= -15V, Tvj= 25°C
VR= 600V, VGE= -15V, Tvj= 125°C
Transistor Wechselrichter / transistor inverter
td,on
Anstiegszeit (induktive Last)
rise time (inductive load)
IC= 75A, VCC= 600V
tr
VR= 600V, VGE= -15V, Tvj= 25°C
IF= 75A, -diF/dt= 2200A/µs
Durchlassspannung
Charakteristische Werte / characteristic values
IF= 75A, VGE= 0V, Tvj= 25°C
IF= 75A, VGE= 0V, Tvj= 125°C
Einschaltverzögerungszeit (induktive Last)
turn on delay time (inductive load)
VGE= ±15V, RG= 4,7Ω, Tvj= 125°C
Abschaltverzögerungszeit (induktive Last)
turn off delay time (inductive load)
VR= 600V, VGE= -15V, Tvj= 125°C
VF
forward voltage
Rückstromspitze
peak reverse recovery current IRM
- -
tf
VGE= ±15V, RG= 4,7Ω, Tvj= 25°C
VGE= ±15V, RG= 4,7Ω, Tvj= 125°C
- 7,0
IC= 75A, VCC= 600V
VGE= ±15V, RG= 4,7Ω, Tvj= 25°C
mΩ
Charakteristische Werte / characteristic values
Eon
IC= 75A, VCC= 600V, Lσ= 70nH
VGE= ±15V, RG= 4,7Ω, Tvj= 125°C
IC= 75A, VCC= 600V
td,off
VGE= ±15V, RG= 4,7Ω, Tvj= 25°C
VGE= ±15V, RG= 4,7Ω, Tvj= 125°C
IC= 75A, VCC= 600V
- mJ
- mJ
Leitungswiderstand, Anschluss-Chip
lead resistance, terminal-chip RCC´/EE´
Tc= 25°C
19
turn off energy loss per pulse Eoff
IC= 75A, VCC= 600V, Lσ= 70nH
VGE= ±15V, RG= 4,7Ω, Tvj= 125°C - 9,5
Diode Wechselrichter / diode inverter
2,5
Qr
Ausschaltenergie pro Puls
reverse recovery energy Erec
VR= 600V, VGE= -15V, Tvj= 25°C
VR= 600V, VGE= -15V, Tvj= 125°C
IF= 75A, -diF/dt= 2200A/µs
- nH
stray inductance module
Modulinduktivität LσCE -
SC data VCC= 900V, VCEmax= VCES - LσCE ·di/dt
Einschaltverlustenergie pro Puls
turn on energy loss per pulse
Ausschaltverlustenergie pro Puls
Fallzeit (induktive Last)
fall time (inductive load) VGE= ±15V, RG= 4,7Ω, Tvj= 25°C
VGE= ±15V, RG= 4,7Ω, Tvj= 125°C
Kurzschlussverhalten tP ≤ 10µs, VGE ≤ 15V, TVj ≤ 125°C ISC - 300 - A
Sperrverzögerungsladung
recovered charge
IF= 75A, -diF/dt= 2200A/µs
2 (8) DB_FS75R12KE3_3.0 .xls
2002-09-03
Technische Information / technical information
FS75R12KE3
IGBT-Module
IGBT-Modules
min. typ. max.
- - 0,35 K/W
- - 0,58 K/W
mm
clearence distance
Luftstrecke
mm
creepage distance
Kriechstrecke
g
weight G 180
Gewicht
M 3 -
Innere Isolation
6
internal insulation
CTI
comperative tracking index
Gehäuse, siehe Anlage
case, see appendix
Schraube / screw M5
Al2O3
225
10,0
7,5
Abweichung von R100
R25 -kΩ
Thermische Eigenschaften / thermal properties
-5 - 5
-5
Verlustleistung
Tc= 100°C, R100= 493Ω∆R/R
Tc= 25°C P25
power dissipation
RthCK
thermal resistance, case to heatsink
Höchstzulässige Sperrschichttemp.
Übergangs Wärmewiderstand
Tvj max
pro Modul / per module
λPaste= 1W/m*K / λgrease= 1W/m*K
operation temperature
maximum junction temperature
Betriebstemperatur
B-value
%
- -
Charakteristische Werte / characteristic values
NTC-Widerstand / NTC-thermistor
Nennwiderstand Tc= 25°C
rated resistance
deviation of R100
B-Wert R2= R1 exp[B(1/T2 - 1/T1)] B25/50
K/W- 0,02
- 3375 - K
°C
20 mW
150
-
--
-40 -
Mit dieser technischen Information werden Halbleiterbauelemente spezifiziert, jedoch keine Eigenschaften
zugesichert. Sie gilt in Verbindung mit den zugehörigen technischen Erläuterungen.
125 °C
°C
Tstg -40 - 125
Lagertemperatur
storage temperature
This technical information specifies semiconductor devices but promises no characteristics. It is valid with
the belonging technical notes.
Innerer Wärmewiderstand; DC
thermal resistance, junction to case; DC
Transistor Wechelr. / transistor inverter
Diode Wechselrichter / diode inverter RthJC
Mechanische Eigenschaften / mechanical properties
Nm
Anzugsdrehmoment, mech. Befestigung
mounting torque
Tvj op
3 (8) DB_FS75R12KE3_3.0 .xls
2002-09-03
Technische Information / technical information
FS75R12KE3
IGBT-Module
IGBT-Modules
output characteristic (typical) Tvj= 125°C
output characteristic (typical) VGE= 15V
A
usgangs
k
enn
li
n
i
en
f
e
ld
(t
yp
i
sc
h)
IC= f(VCE)
A
usgangs
k
enn
li
n
i
e
(t
yp
i
sc
h)
IC= f(VCE)
0
25
50
75
100
125
150
0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5 4,0
VCE [V]
IC [A]
Tvj = 25°C
Tvj = 125°C
0
25
50
75
100
125
150
0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5 4,0 4,5 5,0
VCE [V]
IC [A]
VGE=19V
VGE=17V
VGE=15V
VGE=13V
VGE=11V
VGE=9V
4 (8) DB_FS75R12KE3_3.0 .xls
2002-09-03
Technische Information / technical information
FS75R12KE3
IGBT-Module
IGBT-Modules
Üb
er
t
ragungsc
h
ara
kt
er
i
s
tik
(t
yp
i
sc
h)
transfer characteristic (typical)
IC= f(VGE)
VCE= 20V
Durchlasskennlinie der Inversdiode (typisch) IF= f(VF)
forward caracteristic of inverse diode (typical)
0
25
50
75
100
125
150
456789101112
VGE [V]
IC [A]
Tvj=25°C
Tvj=125°C
0
25
50
75
100
125
150
0,0 0,2 0,4 0,6 0,8 1,0 1,2 1,4 1,6 1,8 2,0 2,2 2,4
VF [V]
IF [A]
Tvj = 25°C
Tvj = 125°C
5 (8) DB_FS75R12KE3_3.0 .xls
2002-09-03
Technische Information / technical information
FS75R12KE3
IGBT-Module
IGBT-Modules
S
c
h
a
lt
ver
l
us
t
e
(t
yp
i
sc
h)
Switching losses (typical)
Eon= f(RG), Eoff= f(RG), Erec= f(RG)
VGE=±15V, IC=75A, VCE=600V, Tvj=125°C
S
c
h
a
lt
ver
l
us
t
e
(t
yp
i
sc
h)
Switching losses (typical)
Eon= f(IC), Eoff= f(IC), Erec= f(IC)
VGE=±15V, RG=4,7Ω, VCE=600V, Tvj=125°C
0
2
4
6
8
10
12
14
16
18
20
0 25 50 75 100 125 150
IC [A]
E [mJ]
Eon
Eoff
Erec
0
2
4
6
8
10
12
14
16
18
20
0 1020304050
RG [Ω]
E [mJ]
Eon
Eoff
Erec
6 (8) DB_FS75R12KE3_3.0 .xls
2002-09-03
Technische Information / technical information
FS75R12KE3
IGBT-Module
IGBT-Modules
8,884E-02
2
6,139E-02
4
Transient thermal impedance
7,662E-01
5,906E-02
3,333E-03
3,815E-01
3,429E-02
1,099E-01
1,294E-01
3,480E-02
Sicherer Arbeitsbereich (RBSOA)
Reverse bias safe operation area (RBSOA) VGE=±15V, RG=4,7Ω, Tvj=125°C
i
ri [K/W] : IGBT
τi [s] : IGBT
ri [K/W] : Diode
τi [s] : Diode
1
3,949E-02
2,345E-03
Transienter Wärmewiderstand ZthJC = f (t)
3
1,580E-01
2,820E-02 1,128E-012,820E-01
0,01
0,1
1
0,001 0,01 0,1 1 10
t [s]
ZthJC [K/W]
Zth : IGBT
Zth : Diode
0
25
50
75
100
125
150
175
0 200 400 600 800 1000 1200 1400
VCE [V]
IC [A]
IC,Chip
IC,Modul
7 (8) DB_FS75R12KE3_3.0 .xls
2002-09-03
Technische Information / technical information
FS75R12KE3
IGBT-Module
IGBT-Modules
Gehäusemaße / Schaltbild
Package outline / Circuit diagram
8 (8) DB_FS75R12KE3_3.0 .xls
2002-09-03
Terms & Conditions of Usage
Attention
The present product data is exclusively subscribed to technically experienced
staff. This Data Sheet is describing the specification of the products for which a
warranty is granted exclusively pursuant the terms and conditions of the supply
agreement. There will be no guarantee of any kind for the product and its
specifications. Changes to the Data Sheet are reserved.
You and your technical departments will have to evaluate the suitability of the
product for the intended application and the completeness of the product data
with respect to such application. Should you require product information in
excess of the data given in the Data Sheet, please contact your local Sales Office
via “www.eupec.com / sales & contact”.
Warning
Due to technical requirements the products may contain dangerous substances.
For information on the types in question please contact your local Sales Office via
“www.eupec.com / sales & contact”.
