3875081 GE SOLID STATE High-Voltage Power Transistors O1 DEM 3475081 ool7Lay 7 Jo Ta 3R-09 2N6211, 2N6212, 2N6213, 2N6214 High-Voltage Medium-Power Silicon P-N-P Transistors For Switching and Amplifier Applications in Military, Industrial, and Commerical Equipment Features: a High voltage ratings: s Vceo(sus) = -400 V max. (2N6214) = -350 V max. (2N6213) = -300 V max. (2N6212) = -225 V max. (2N6271) Applications: Power-Switching circuits Switching regulators Converters Inverters High-Fidelity amplifiers RCA types 2N6211, 2N6212, 2N6213, and 2N6214 are epitaxial silicon p-n-p transistors with high breakdown- voltage ratings and fast switching speeds. They are supplied in the popular JEDEC TO-213AA package; they differ in breakdown-voitage ratings and leakage current values. Formerly RCA Dev. Nos. TA7719, TA7410, TA8330, and TA8331, respectively. MAXIMUM RATINGS, Absolute-Maximum Values: * COLLECTOR-TO-BASE VOLTAGE, Veno.....++eeessee COLLECTOR-TO-EMITTER SUSTAINING VOLTAGE: With base open, Veeo(SUS) .......eecceerr ener teeoes With external base-to-emitter resistance (Roe) = 50 0, Voen(Sus) .....cccccerecnesecerecneee * With base-emitter junction reverse-biased (Vee = 1.5 V), Voex(SUS) oe er eececrereereeens * EMITTER-TO-BASE VOLTAGE, Veso .... * COLLECTOR CURRENT (Continuous), Ic .. * BASE CURRENT (Continuous), la ....... 2.0.2 eee ee eee TRANSISTOR DISSIPATION, Pr: * At case temperatures up to 100C and VoE UP tO5OV ..ccccsecscecnettcseetserenrerareee At case temperatures up to 25C and VoE UP tO40V .ccsc cee cce reeset cetacean seneeenaes At case temperatures up to 25C and Voge above 4OV woes cece cc en cence ceessencccetesens At case temperatures above 25C and Vow ADOVE 4OV oo. cece seer ec crete teens eeeeees * TEMPERATURE RANGE: Storage & Operating (Junction) ............eec een ee * LEAD TEMPERATURE (During Soldering): At distance > 1/32 in. (0.8 mm) from Case fOr 10S MAX. 1... cc cece rent e ete eneewnenes 186 2N6211 2N6212 2N6213 -275 -350 -400 -225 -300 350 -250 -325 -375 -275 -350 -400 6 4 6 -2 2 -2 -1 1 -1 20 20 20 35 35 35 See Fig. 1 See Figs. 1 & 3. -65 to +200 File Number 507 TERMINAL DESIGNATIONS EN JEDEC TO-213AA 230 c (FLANGE) 92CS-27516 2N6214 -450 -400 425 -450 -2 -1 20 36 Prec < = S C 0726 c-07wn 3875081 GE SOLID STAT OL DEB 2a7s081 ooiias 4 & D 7-33-19 High-Voltage Power Transistors 2N6211, 2N6212, 2N6213, 2N6214 ELECTRICAL CHARACTERISTICS, At Case Temperature (Tc) = 25C Unless Otherwise Specified TEST CONDITIONS LIMITS Voltage Current CHARACTERISTIC =| SYMBOL] ae Adc 2Nezt1 2NG212 2NE213 2N6214 UNITS Voe Vee | lc te Ig Min. | Max.] Min. | Max.| Min. | Max. Min. Max. Cotlector-Cutoff Current: t With base open CEO {150 0 - |-5 ~ |-5 ~ |.s ~- -5 "| With base-emitter junc- 730 | 18 - 7} = tes! = = 7 = tion reverse-biased ~360 | 15 - - - | = |-05 = Ioey SEs } |} = mA *| With base emitter junc- 250 15 _ 5 = _ tion reverse biased and 318 12 > z= = i = |-s = = = 2, 7 . - =- - - - = - -10 Te = 100C 410 15 | Emitter-Cutoff Current lepo 6 0 ~ f-1 -05 - -05 -05 mA =2.8 14 10 | too, = = = = = *! DC Forward Current h 3.2 -14 - = 10 100 - - - Transfer Ratio FE |_4 -18 -~|- - - | 100 - -5 -18 - - - - - - 10 100 Collector-to- Emitter Sustaining Voltage: Voeolsus} 02 0 -225 ~ -300 - -350 - 400 = *| With base open With external base-to- emitter resistance Veerlsus -02 -250 - |-325 |-375 - 425 - (Rag) = 502 Vv With base emitter junc- tion reverse-biased and Veexisus 15 |-0.2 -275 - 350 | -400 - 450 - external base-to emitter resistance (Rag) = 50 2 _ O05 mA _|-6 716 = =5 = Emitter-to-Base Voltage Vv Vv EBO imA | -6 = = = = * | Emitter-to-Base Satura- Vagglsatl -18 -0 125 . 14 - 1-14 - -14 - -14 v tion Voltage "1 Collector-to-Emitter Voglsatl -18 -0,125 _ 14 _ -16 _ -2 - 25 v Saturation Voltage Output Capacitance Cobo -10 0 _ 220 - 220 - 220 - 220 pF (t= 1 MHz) (Veg) Second-Breakdown Coltector Current Sip ~40 -0,875) - 0875) 0 875 - 0 875) - A (Base forward-biased) * | Magnitude of Common- Emitter, Smatl-Signal, Short-Cireuit, Forward- [hel -10 0.2 4 - 4 ~ 4 ~ 4 - Current Transfer Ratio (f= 5 MHz} * | Saturated Switching Times: Veo = ig, &I 3 t cc 1 Bez) _ tos | - [os - | 06 - 0.6 Rise time ~200V 0,125 Vere? ig, &t Storage time t, ce -1 Bie2) _ tas | - Jas] - | as] - 25 bs 200 V -0 125 Voc = te, &1 Fall time ty cc 1 simle2zt _ tos | - | oe | - | o6 | - 06 -200V 0.125 Thermal Resistance Rec ~10 4 _ 5 - 5 - 5 = 5 [CW (Junction-to case) *In accordance with JEOEC registration data format JS 6 ADE-1. SPulsed: Pulse duration = 300 us; duty factor 2%. 187 0727 = 083875081 GE SOLID state O1 DEP 3875081 OOL718b O I, 7-33-19 High-Voltage Power Transistors 2N6211, 2N6212, 2N6213, 2N6214 COLLECTOR CURRENT (I})A 25 Vceo MAX.=~225V (2n6211) Vceg MAX.=-300 (2N62I2 Vogo MAX.=~350V (2N6213) Vogo MAX. -400V 2 4 6 8 2 468 =10 =100 1000 COLLECTOR-TO-EMITTER VOLTAGE (Vcg)V 92CS~19220R2 Fig. 1 - Maximum operating areas for all types. CASE TEMPERATURE MAX. {CONTINUOUST COLLECTOR CURRENT {(I)~A Yoeo MAKs-225 Voeo MAX?-300V Voeo MAX?-350 (2N6213) Mak #400 V (2NG214} al -10 *| COLLECTOR-T0- EMITTER VOLTAGE {VcE)-V 92CS-192F6RI Fig. 2 - Maximum operating areas for ail types. 188 _ DO NOT DERATE THE SPECIFIED MAX. FIED VOLTAGE 25C OR PERCENTAGE OF RATED CURRENT AT SPECII Te & E = a 2 a =z S = x Z = rs 6 w 3 = E z a g = wo @ CASE TEMPERATURE (Tc)C g2cs-968 Fig. 3 - Derating curves for ail types. 0728 c-093875081 GE SOLID STATE OL DE WM387508L GoOL7La? 2 i - -33~-(9 High-Voltage Power Transistors COLLECTOR-TO-EMITTER wonrace (Veels-10V CASE TEMPERATURE 25" n = = 1 = E z a 2 = ? z a 3 -0,01 Ol -l COLLECTOR CURRENT (I tA Fi Sg COLLECTOR-TO-EMITTER VOLTAGE DC FORWARD-CURRENT TRANSFER RATIO(hee} COLLECTOR CURRENT (I)a 4+ Typical gain-bandwiath product for all types. 2N6211, 2N6212, 2N6213, 2N6214 TEMPERATURE c 10 a2es- 15972 Oo ng EXTERNAL BASE-TO-EMITTER RESISTANCE [Rae)2 92C$-19ZI7R) Fig. - Collector-to-emitter sustaining-voltage characteristics for all types. CASE TEMPERATURE (Tcl= 25C gv & = x VOLTAGE [Veg 1 92S-19219 15 15-2 COLLECTOR CURRENT (Ic) ~A 92C5- 19236 Fig. 6 - Typical de beta characteristic for all types. COLLECTOR- TO-EMITTER VOLTAGE I 2 & j Fig. 7 - Typical saturation-voltage characteristics for all types. RePErrTion reat 368 puses/s COLLECTOR SUPPLY VOLTAGE (Yocl+-200 Spi kbgeic7er0 28 Ie Ie CASE TEMPERATURE (Tc) #25" C w . a | > w 2 - w 2 = o h o 05 -t -15 =i =2 2.5 =3 COLLECTOR CURRENT {IchA BASE-TO- EMITTER VOLTAGE [Vgeiv 9208-t9237R) g2cs-i9974 Fig. 8 - Typical transfer charactaristics for all types. Fig. 9 - Typical storage-time charactaristics for all types. 189 0729 c-108875081 G E souip state Ol DE 3875081 0017188 4 FT 3B-I9 High-Voltage Power Transistors 2N6211, 2N6212, 2N6213, 2N6214 PULSE DURATION 2 20n8 * BECEECTOR SUPPLY VOLIAGE Woe)*-200V L ARE .- Tarigpacresolsig ce MERCURY RELAY = CASE TEMPERATURE (T)*25C MODEL No, HGP1004, TYPE = OR EQUIVALENT 2ne2is CHANNEL A z 2NGZI2 2Ne? 13 TO Z HEWLETTPACKARD Zz 1 OSCILLOSCOPE & MODEL No 503 % 510 BV OR EQUIVALENT 3 osw 7 oO 60 sia CHANNEL B 5 z VoER (sus) CER 5 & Vogotsus) : o5w oto 50V 5 Yoex {sus} re =} +> 390 9 BY in 2W 92C5-19234RI COLLECTOR CURRENT {Ic]A 9205~1S98OR2 Fig. 10 - Typical turn-on time and fall-time characteristics for all Fig. 11 - Cireult used to measure sustaining voltages Vceo(sus), types. Vcen(sus) and Vcex(sus) for ail types. Veer (sus) -400 t -400 BL ! Bg 2007-4 200 57 ' 4 1 i 4 0 -2251-350! _ 0 250.1 -375 2 =300 -400 ~325 425 NOTE: COLLECTOR -TO- EMITTER VOLTAGE ( Veg}-V SUSTAINING VOLTAGES Yor g(sus),opR (aus), AND Voex(sus} ARE ACCEPTABLE WHEN TRACES FALL 10 THE RIGHT AND ABOVE POINTS "A" FOR TYPE 2N62II, POINTS B' FOR TYPE 2N62I2, POINTS "C FOR TYPE 2NG2I3,AND POINTS"D" FOR TYPE 2NG6214 9205-18235R0 Fig. 12 - Oscilloscope display for measurement of sustaining voltages. Vear/6V Voc#-200 3 ouTruT To HEWLETT-PACKARD OSCILLOSCOPE . MODEL NO. 214A, 0R {TEKTRONIX MODEL w Z EQUIVALENT No 543A, 0R ae EQUIVALENT) as 3 1OnF f = 5 oo : ae o z+ oh PULSE GENERATOR a i oy (puse puraTions = = 2g st at fe Guteur 20ps. REP, RATE* BA tel | i co PULSE 200 Hs) a3 URN-ONe | WR ADJUST Rg FOR Ing AND Re FOR Ic 3 fe TIME 436, AND Ip, MEASURED WITH TEKTRONIX CURRENT PROBE 825 -15978 PEOIS AND TYPE 134 AMPLIFIER,OR EQUIVALENT Fig. 13 - Circult used to measure saturated switching times forall Fig. 14- Phase relationship between input current and output types. voltage showing reference points for specification of switching times. 190 __. 0730 C-11