2N6308
NPN Silicon
Power Transistors
Features
• For switching power supply applications
• 700V collector-base breakdown capability
• Excellent Dynamic saturation characteristics
Maximum Ratings
Symbol Rating Rating Unit
VCEO Collector-Emitter Voltage 380 V
VCBO Collector-Base Voltage 700 V
VEBO Emitter-Base Voltage 10 V
ICP Peak Collector Current 16 A
IC Collector Current 8.0 A
PC Collector power dissipation 140 W
TJ Junction Temperature -55 to +150 OC
TSTG Storage Temperature -55 to +150 OC
Electrical Characteristics @ 25OC Unless Otherwise Specified
Symbol Parameter Min Max Units
OFF CHARACTERISTICS
V(BR)CEO Collector-Emitter Breakdown Voltage*
(IC=10mAdc, IB=0) 380 --- Vdc
VEBO Emitter-base breakdown voltage
(IE=1.0mAdc, IC=0) 10 --- Vdc
ICBO Collector-Base Cutoff Current
(VCB=700Vdc, IE=0) --- 100 uAdc
IEBO Emitter-Base Cutoff Current
(VEB=10Vdc, IC=0) --- 10 uAdc
ON CHARACTERISTICS
hFE Forward Current Transfer ratio
(IC=8.0Adc, VCE=5.0Vdc) 5.0 20 ---
VCE(sat) Collector-Emitter Saturation Voltage
(IC=5.0Adc, IB=1.0Adc) --- 1.0 Vdc
VBE(sat) Base-Emitter Saturation Voltage
(IC=5.0Adc,IB=1.0Adc) --- 1.5 Vdc
tF Full time
(VCE=300Vdc, IC=5.0Adc,
IB1=1.0Adc, VBE(off)=5.0V dc) --- 125 nS
TS Turn-off storage time
(VCE=300Vdc, IC=5.0Adc,
IB1=1.0Adc, VBE(off)=5.0V dc) --- 2300 nS
TO-3
DIMENSIONS
INCHES MM
DIM MIN MAX MIN MAX NOTE
A 1.550 REF 39.37 REF
B ----- 1.050 ----- 26.67
C .250 .335 6.35 8.51
D .038 .043 0.97 1.09
E 0.55 0.70 1.40 1.77
G .430 BSC 10.92 BSC
H .215 BSC 5.46 BSC
K .440 .480 11.18 12.19
L .665 BSC 16.89 BSC
N ----- .830 ----- 21.08
Q .151 .165 3.84 4.19 ∅
U 1.187 BSC 30.15 BSC
V .131 .188 3.33 4.77
A
N
E
D
C
K
PIN 1. BASE
PIN 2. EMITTER
CASE. COLLECTOR
H
V
U
L
G
B
Q
1
2
omponents
20736 Marilla Street Chatsworth
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MCC
www.mccsemi.com
Revision: 2 2003/04/30
TM
Micro Commercial Components
