Qualcomm Technologies, Inc. WCN3680B/WCN3660B Device Specification LM80-P0436-70 Rev. B July 18, 2017 For additional information or to submit technical questions, go to: https://www.96boards.org/DragonBoard410c/forum Qualcomm Snapdragon is a product of Qualcomm Technologies, Inc. Other Qualcomm products referenced herein are products of Qualcomm Technologies, Inc. or its subsidiaries. DragonBoard, Qualcomm, and Snapdragon are trademarks of Qualcomm Incorporated, registered in the United States and other countries. Other product and brand names may be trademarks or registered trademarks of their respective owners. This technical data may be subject to U.S. and international export, re-export, or transfer ("export") laws. Diversion contrary to U.S.and international law is strictly prohibited. Use of this document is subject to the license set forth in Exhibit 1. Qualcomm Technologies, Inc. 5775 Morehouse Drive San Diego, CA 92121 U.S.A. @ 2017 Qualcomm Technologies, Inc. All rights reserved. Revision history Revision Date A June 2017 Initial release B July 2017 Added Figure 3-6 and Figure 3-8 LM80-P0436-70 Rev. B Description MAY CONTAIN U.S. AND INTERNATIONAL EXPORT CONTROLLED INFORMATION 2 WCN3680B/WCN3660B Device Specification Contents Contents 1 Introduction . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 Documentation overview . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 WCN3680B/WCN3660B device introduction . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 WCN3680B/WCN3660B features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 1.3.1 WCN3680B/WCN3660B common features . . . . . . . . . . . . . . . . . . . . . . . . . . 11 1.3.2 Additional features integrated into WCN3680B . . . . . . . . . . . . . . . . . . . . . . . 11 1.3.3 WLAN features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 1.3.4 Bluetooth features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 1.3.5 FM radio features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 1.3.6 Top-level support features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 1.3.7 Package and other features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 1.3.8 Summary of key WCN3680B/WCN3660B features . . . . . . . . . . . . . . . . . . . . 14 Terms and acronyms . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 Special marks . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18 2 Pad definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20 1.1 1.2 1.3 1.4 1.5 2.1 2.2 I/O parameter definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23 Pad descriptions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24 3 3.1 3.2 3.3 3.4 3.5 3.6 3.7 3.8 3.9 Electrical specifications . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 29 Absolute maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Operating conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . DC power characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3.3.1 Power mode definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3.3.2 Power consumption . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Power sequencing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . WCN3680B/WCN3660B internal LDO regulator . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Digital logic characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Timing characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3.7.1 Timing diagram conventions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3.7.2 Rise and fall time specifications . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Top-level support . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3.8.1 I/O block . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3.8.2 Master reference clock requirements . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3.8.3 DC power gating and distribution . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . WLAN RF circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3.9.1 WLAN 2.4 GHz RF Tx . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . LM80-P0436-70 Rev. B MAY CONTAIN U.S. AND INTERNATIONAL EXPORT CONTROLLED INFORMATION 29 30 30 30 31 32 32 32 33 33 34 34 34 35 35 36 37 3 WCN3680B/WCN3660B Device Specification 3.9.2 WLAN 2.4 GHz RF Rx . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3.9.3 WLAN 5 GHz RF Tx . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3.9.4 WLAN 5 GHz RF Rx . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3.9.5 WLAN analog interface between host and WCN3680B/WCN3660B . . . . . . 3.9.6 WLAN Tx power detector . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3.10 Bluetooth radio . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3.10.1 Bluetooth RF Tx . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3.10.2 Bluetooth RF Rx . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3.11 FM performance specifications . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3.11.1 FM analog and RF performance specifications . . . . . . . . . . . . . . . . . . . . . . . . 3.11.2 FM RDS interrupt . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 4.1 4.2 5 5.1 5.3 6 6.1 6.2 6.3 6.4 7.1 7.2 70 70 71 71 71 71 72 72 72 PCB mounting guidelines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 73 Land pad and stencil design . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . SMT development and characterization . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . SMT peak package-body temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . SMT process verification . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 63 66 66 67 68 68 69 . . . . . . . . . . . . . . . . . . . . . . . . . .Carrier, storage, and handling information 70 Shipping . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5.1.1 Tape and reel information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5.1.2 Packing for shipment (including bar code label) . . . . . . . . . . . . . . . . . . . . . . . Storage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5.2.1 Storage conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5.2.2 Out-of-bag duration . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Handling . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5.3.1 Baking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5.3.2 Electrostatic discharge . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5.2 39 43 49 49 51 52 52 55 58 58 62 Mechanical information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 63 Device physical dimensions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Device marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4.2.1 WCN3680B . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4.2.2 WCN3660B . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Device ordering information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Device moisture-sensitivity level . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4.3 4.4 4.5 Contents 73 73 74 74 Part reliability . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 75 Reliability qualification summary . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 75 Qualification sample description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 76 LM80-P0436-70 Rev. B MAY CONTAIN U.S. AND INTERNATIONAL EXPORT CONTROLLED INFORMATION 4 WCN3680B/WCN3660B Device Specification Figures Figure 2-1 Figure 3-1 Figure 3-3 Figure 3-4 Figure 3-5 Figure 3-6 Figure 3-7 Figure 3-8 Figure 4-1 Figure 4-2 Figure 4-3 Figure 4-4 Figure 4-5 Figure 5-1 Figure 5-2 LM80-P0436-70 Rev. B WCN3680B/WCN3660B pad assignments (top view) . . . . . . . . . . . . . . . . . . . . . . . . 20 Timing diagram conventions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 33 RF connections for dual-band (2.4 GHz and 5.0 GHz) using SCPC . . . . . . . . . . . . . 36 RF connections for single-band (2.4 GHz) using SCPC . . . . . . . . . . . . . . . . . . . . . . . 36 RF switch control for dual-band external 2nd generation FEMs . . . . . . . . . . . . . . . . 45 RF switch control for dual-band external 3rd generation FEMs . . . . . . . . . . . . . . . . 46 RF switch control for 2nd generation 5 GHz-only external FEMs . . . . . . . . . . . . . . . 47 RF switch control for 3rd generation external FEMs . . . . . . . . . . . . . . . . . . . . . . . . . 48 79B WLNSP outline drawing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 64 WCN3680B/WCN3660B pad locations . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 65 WCN3680B part marking (top view - not to scale) . . . . . . . . . . . . . . . . . . . . . . . . . . 66 WCN3660B part marking (top view - not to scale) . . . . . . . . . . . . . . . . . . . . . . . . . . 67 Device identification code . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 68 Carrier tape drawing with part orientation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 70 Tape handling . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 71 MAY CONTAIN U.S. AND INTERNATIONAL EXPORT CONTROLLED INFORMATION 5 WCN3680B/WCN3660B Device Specification Tables Table 1-1 Primary WCN3680B/WCN3660B documentation . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 Table 1-2 Reference documents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 Table 1-3 Key WCN3680B/WCN3660B features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 Table 1-4 Terms and acronyms . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 Table 1-5 Special marks . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18 Table 2-1 WCN3680B/WCN3660B IC pad assignment in numeric order and location . . . . . . . 21 Table 2-2 I/O description (pad type) parameters . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23 Table 2-3 Pad descriptions - WLAN functions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25 Table 2-4 WLAN pad type vs. operating mode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25 Table 2-5 Pad descriptions - BT functions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 26 Table 2-6 BT pad type vs. operating mode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 26 Table 2-7 Pad descriptions - shared WLAN and BT RF front-end functions . . . . . . . . . . . . . . . 26 Table 2-8 Pad descriptions - FM radio functions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 26 Table 2-9 FM pad type vs. operating mode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 27 Table 2-10 Pad descriptions - top-level support functions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 27 Table 2-11 Pad descriptions - no connection, do not connect, and reserved pads . . . . . . . . . . . . 27 Table 2-12 Pad descriptions - power supply pads . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 28 Table 2-13 Pad descriptions - ground pads . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 28 Table 3-1 Absolute maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 29 Table 3-2 Operating conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30 Table 3-3 Input power supply current from primary source . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 31 Table 3-4 Baseband digital I/O characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 32 Table 3-5 Capacitive load derating factors . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 34 Table 3-6 Reference requirements . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 35 Table 3-7 WLAN 2.4 GHz RF Tx performance specifications . . . . . . . . . . . . . . . . . . . . . . . . . . 37 Table 3-8 WLAN RF Tx emission specifications for WAN concurrency . . . . . . . . . . . . . . . . . . 38 Table 3-9 WLAN 2.4 GHz RF Rx performance specifications . . . . . . . . . . . . . . . . . . . . . . . . . . 39 Table 3-10 WLAN 2.4 GHz sensitivity degradation with WAN blockers . . . . . . . . . . . . . . . . . . 40 Table 3-11 WLAN 5G sensitivity degradation with WAN blockers: part 1 . . . . . . . . . . . . . . . . . 41 Table 3-12 WLAN 5G sensitivity degradation with WAN blockers - Part 2 . . . . . . . . . . . . . . . . 42 Table 3-13 WLAN 5 GHz RF Tx performance specifications . . . . . . . . . . . . . . . . . . . . . . . . . . 43 Table 3-14 5 GHz RF Tx performance - external PA driver . . . . . . . . . . . . . . . . . . . . . . . . . . . . 48 Table 3-15 2.4 GHz RF Tx performance - external PA driver . . . . . . . . . . . . . . . . . . . . . . . . . . . 48 Table 3-16 5 GHz/20 MHz RF performance - Rx sensitivity . . . . . . . . . . . . . . . . . . . . . . . . . . . 49 Table 3-17 Analog interface signals . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50 Table 3-18 Analog I/Q interface specifications . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50 Table 3-19 WLAN Tx power-detector performance specifications . . . . . . . . . . . . . . . . . . . . . . . 51 Table 3-20 Table 3-21 Table 3-22 Table 3-23 LM80-P0436-70 Rev. B Bluetooth Tx performance specifications: basic rate, class1, , . . . . . . . . . . . . . . . . . 52 Bluetooth Tx performance specifications: enhanced data rate . . . . . . . . . . . . . . . . . 53 Bluetooth Tx performance specifications: low-energy mode . . . . . . . . . . . . . . . . . . . 54 Bluetooth Rx performance specifications: basic rate . . . . . . . . . . . . . . . . . . . . . . . . 55 MAY CONTAIN U.S. AND INTERNATIONAL EXPORT CONTROLLED INFORMATION 6 WCN3680B/WCN3660B Device Specification Table 3-24 Bluetooth Rx performance specifications: enhanced data rate . . . . . . . . . . . . . . . . . 57 Table 3-25 Bluetooth Rx performance specifications: low-energy mode . . . . . . . . . . . . . . . . . . 57 Table 3-26 FM radio (with RDS) Rx performance specifications . . . . . . . . . . . . . . . . . . . . . . . . 58 Table 3-27 FM receiver selectivity , , , , , . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .60 Table 4-1 WCN3680B part marking line descriptions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 66 Table 4-2 WCN3660B part marking line descriptions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 67 Table 4-3 Device thermal resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 69 Table 6-1 SMT reflow profile conditions (for reference only) . . . . . . . . . . . . . . . . . . . . . . . . . . . 74 Table 7-1 WCN3680B/WCN3660B reliability qualification report for a device from TSMC and WLNSP package from TSMC and Amkor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 75 LM80-P0436-70 Rev. B MAY CONTAIN U.S. AND INTERNATIONAL EXPORT CONTROLLED INFORMATION 7 1 Introduction 1.1 Documentation overview This document provides a description of chipset capabilities. Technical information for the WCN3680B/WCN3660B IC is primarily covered by the documents listed in Table 1-1. Each is a self-contained document, but a thorough understanding of the device and its applications requires familiarization with all of them. Before you begin, you must read the device description in Section 2.1. Table 1-1 Primary WCN3680B/WCN3660B documentation Document no. Title LM80-P0436-70 WCN3680B/WCN3660B Device Specification LM80-P0436-71 WCN3660B Device Revision Guide Additional reference documents are listed in Table 1-2. Table 1-2 Reference documents Reference Document 1 IEEE 802.11n WLAN MAC and PHY, March 2012 2 IEEE Std 802.11ac-2013 3 Bluetooth Specification Version 4.2, December 2, 2014 4 Bluetooth Radio Frequency TSS and TP Specification 1.2/2.0/2.0 + EDR/2.1/2.1 + EDR/3.0/3.0 + HS/4.0, July 18, 2011 5 Bluetooth Low Energy RF PHY Test Specification, RF-PHY.TS/4.0.0, December 15, 2009 6 ANSI/ESD S20.20-1999, Protection of Electrical and Electronic Parts, Assemblies, and Equipment This WCN3680B/WCN3660B device specification is organized as follows: Chapter 1 Provides an overview of the WCN3680B/WCN3660B documentation, gives a high-level functional description of the device, lists the device features, and defines marking conventions, terms, and acronyms used throughout this document. Chapter 2 Defines the device pin assignments. Chapter 3 Defines the device electrical performance specifications, including absolute maximum and operating conditions. Chapter 4 Provides IC mechanical information, including dimensions, markings, ordering information, moisture sensitivity, and thermal characteristics. LM80-P0436-70 Rev. B MAY CONTAIN U.S. AND INTERNATIONAL EXPORT CONTROLLED INFORMATION 8 WCN3680B/WCN3660B Device Specification Introduction Chapter 5 Describes shipping, storage, and handling of the WCN3680B/WCN3660B devices. Chapter 6 Presents procedures and specifications for mounting the WCN3680B/WCN3660B device onto printed circuit boards (PCBs). Chapter 7 Presents WCN3680B/WCN3660B device reliability data, including a definition of the qualification samples and a summary of qualification test results. 1.2 WCN3680B/WCN3660B device introduction The WCN3680B/WCN3660B IC integrates four different wireless connectivity technologies into a single device: Dual-band 2.4 GHz and 5 GHz wireless local area network (WLAN) compliant with the IEEE 802.11a/b/g/n specification and supports optional external PA for both 2.4 GHz and 5 GHz bands WCN3680B supports 802.11ac (including 256 QAM rates MCS8 and MCS9) for data rates of up to 433 Mbps Bluetooth compliant with the Bluetooth specification version 4.x (BR/EDR + BLE); ANT+ support Worldwide FM radio, supporting the Radio Data System (RDS) for Europe and the Radio Broadcast Data System (RBDS) for North America The WCN3680B/WCN3660B is a highly integrated IC using the 3.805 x 3.82 x 0.63 mm, 79-pin wafer-level nanoscale package (79B WLNSP) and is supplemented by APQ IC processing to create a wireless connectivity solution with minimal part count and PCB area. The WCN3680B/WCN3660B IC ensures hardware and software compatibility with companion Qualcomm Technologies, Inc. (QTI) chipsets. The WCN3680B/WCN3660B IC uses low-power 65 nm RF CMOS fabrication technology, making it suited for battery-operated devices where power consumption and performance are critical. As shown in Figure 1-1, the WCN3680B/WCN3660B device's major functional blocks are: Dual-band WLAN RF Bluetooth radio (RF and digital processing) FM radio (RF and digital processing) Shared WLAN + Bluetooth RF front-end (RFFE) circuits Top-level support circuits that interface with the host IC, buffer the TCXO input, generate the wireless connectivity network (WCN) internal clocks, and gate and distribute DC power to the other blocks. LM80-P0436-70 Rev. B MAY CONTAIN U.S. AND INTERNATIONAL EXPORT CONTROLLED INFORMATION 9 WCN3680B/WCN3660B Device Specification Introduction Four major WCN3680B/WCN3660B functional blocks WL_xPA_CTL2 WL_xPA_CTL1 DC power gating & distribution LNA (shared) WLAN wl_5g_rx_lo wl_5g_tx_lo wl_2p4g_tx_lo wl_2p4g_rx_lo WLAN 2.4 G quadrature downconvert wl_2p4g_rx_lo power detect DA LPF WLAN TX WLAN 5 G quadrature upconvert PA WL_xPA _CTL1 WL_xPA _CTL0 BT_DATA BT_STROBE SSBI_BT BT baseband interface VDD_xxx_1P2 VDD_xxx_1P3 VDD_xxx_3P3 VDD_IO_1P8 Lower MAC VDD_XO_1P8 Coding & Modulation WL_CMD_DATA2 WLAN_DATA2 WL_CMD_DATA1 WLAN_DATA1 WLAN_DATA0 WL_CMD_DATA0 WL_CMD_CLK WL_CMD_SET WL_BB_IP WL_BB_IN WL_BB_QP Multiplexing WL_BB_QN WLAN_CLK WLAN_CMD Filtering Interpolation IQ compensation Pre-rotation WLAN_BB_IP WLAN_BB_IM WLAN_BB_QP WLAN_BB_QM Demodulation & Decoding WLAN Tx FE WLAN Rx FE DACs Filtering Decimation IQ compensation De-rotation Mux ADCs switching & matching WLAN RX wl_5g_tx_lo LNA WLAN RF LPF WLAN 5 G quadrature downconvert LPF 2 WL_REF FM_REF LPF BT_REF digital clocks wl_5g_rx_lo Wireless Connectivity Subsystem within the host CLK_OUT XO_IN XO_OUT FM Rx other FM stat & ctl FM Radio FM quadrature downconvert FM_HS_RX BPF BPF FM Rx ADCs 3 Bluetooth Link Controller GNDs WL_REF wl_2p4g_tx_lo 2G/5G WLAN LO synthesizer & distribution on-chip stat & ctl LPF WLAN 2.4 G quadrature upconvert PA WL_DA_OUT WL_RFIO_5G ADCs LPF WL_xPA_CTL0 WL_PDET_IN LPF I/O circuits WL_xPA_CTL3 LPF BT_SSBI Clock circuits WL_xPA_CTL4 Bluetooth quadrature downconvert data WLAN status & control Shared WLAN + BT RFFE BT external PA controls WL_BT_RFIO switching & matching bt_rx_lo BT_STROBE 3) FM radio 4) Shared support circuits Filtering Decimation I/Q compensation AGC Interference detect FM_SSBI FM baseband interface FM_DATA 4 SSBI_FM FM_SDI FM baseband interface Filtering MPX DCC Spur removal FM/RDS demod Mono/stereo decode Wireless Connectivity Processor & Memory with I/Os to/from other APQ blocks BT_REF BT_DATA Bluetooth baseband interface Gain & Cal LUTs LPF Modem PA 1 & ctl 1) Bluetooth radio 2) WLAN RF transceiver WLAN dig interface LPF Bluetooth quadrature upconvert bt_rx_lo WCN3680B/ WCN3660B Bluetooth Radio stat bt_tx_lo bt_tx_lo DACs BT LO synthesizer & distribution Top level support LNA Key functions are integrated within the APQ wireless connectivity subsystem (WCS) Figure 1-1 WCN3680B/WCN3660B functional block diagram LM80-P0436-70 Rev. B MAY CONTAIN U.S. AND INTERNATIONAL EXPORT CONTROLLED INFORMATION 10 WCN3680B/WCN3660B Device Specification Introduction The WCN3680B/WCN3660B IC includes diverse functions. Its operation can be understood by considering each major functional block individually. This WCN3680B/WCN3660B document set is organized according to the block partitioning listed before Figure 1-1. Information contained in this device specification is organized accordingly, including the circuit groupings within its functional block diagram (Figure 1-1), pin descriptions (Chapter 2), and detailed electrical specifications (Chapter 3). 1.3 WCN3680B/WCN3660B features NOTE 1.3.1 1.3.2 Some of the hardware features integrated within the WCN3660B/WCB3680B must be enabled by software. Refer to the latest version of the applicable software release notes to identify the enabled features. WCN3680B/WCN3660B common features Integration of WLAN, Bluetooth, and FM radio functionality Optional support for 2.4 GHz and 5 GHz external PAs/LNAs for additional performance Highly integrated front-end eliminates external PA and LNA matching, and antenna Tx/Rx switching Support for the IEEE 802.11a/b/g/n radio standard Clock - 48 MHz crystal or 19.2 MHz 65 nm RF CMOS technology in the small 79 WLNSP package Dual-band WLAN: 2.4 GHz and 5 GHz RF transceivers Compliant with Bluetooth specification version 4.x Concurrent WLAN + Bluetooth reception in the 2.4 GHz band Small IC footprint, low parts count, and minimal PCB area Additional features integrated into WCN3680B Added support for 802.11ac Support 256 QAM modulation schemes (MCS8 and MCS9) for data rates of up to 433 Mbps Master clock - 48 MHz support only. For exception for single band WCN3660B stuff option designs utilizing PMIC system 19.2 MHz clock, see Section 1.3.6. LM80-P0436-70 Rev. B MAY CONTAIN U.S. AND INTERNATIONAL EXPORT CONTROLLED INFORMATION 11 WCN3680B/WCN3660B Device Specification 1.3.3 WLAN features Advanced power management minimizes power consumption in nonactive modes. Supports both 2.4 GHz and 5 GHz RF transceivers and compliant with IEEE 802.11a/b/g/n and IEEE 802.11ac (WCN3680B only). Support for an external PA and an external LNA for applications requiring enhanced 2.4 GHz and 5 GHz performance. Integrated PA and LNA provides high dynamic Tx output power and excellent Rx sensitivity for extended range. Internal PAs and T/R switches for both 2.4 GHz and 5 GHz, with the option for an external PA and T/R switch for 2.4 GHz and 5 GHz. Concurrent WLAN + Bluetooth reception in the 2.4 GHz band. LTE/ISM coexistence support. No manufacturing calibration needed. Host interfaces: 4-line analog baseband interface with Rx/Tx multiplexing 5-line digital command-and-control interface Other solution-level features WCN3660B: Support for HT20 and HT40 WCN3680B: Support for HT20, HT40, VHT20, VHT40, and VHT80 Support for 802.11n (WCN3660B and WCN3680B) and 802.11ac (WCN3680B only) Space-time block coding (STBC) support Support for short guard interval 1.3.4 Introduction Support for other optional 802.11ac features (WCN3680B only), that is, LDPC. MUMIMO, Tx beamformee Bluetooth features Bluetooth 4.x + BR/EDR + BLE Support for ANT protocol Support for Bluetooth-WLAN coexistence operation, including optional concurrent receive Up to 3.5 piconets (master, slave, and page scanning) Support for class 1 and class 2 power-level transmissions without requiring an external PA No factory calibration required APQ interfaces: LM80-P0436-70 Rev. B Two-line digital data interface supports Rx and Tx Single-wire serial bus interface (SSBI) for status and control MAY CONTAIN U.S. AND INTERNATIONAL EXPORT CONTROLLED INFORMATION 12 WCN3680B/WCN3660B Device Specification 1.3.5 FM radio features Worldwide FM band support (76 to 108 MHz) with 50 kHz channel spacing Integrated FM modem receiver with integrated frequency synthesizer RDS for Europe/RBDS for North America Automatic gain control Standby mode Desense-free FM reception when operating with a phone Host interfaces: Single-line digital data interface supports Rx SSBI for status and control Supports external wired-headset antenna for Rx-only Top-level support features 1.3.7 Integrated RDS/RBDS encoder and decoder (with enable/disable function) 1.3.6 Introduction System clock options 19.2 MHz TCXO clock for 2.4 GHz only configuration 48 MHz XO for 2.4G and 5G configuration Clock buffering, gating, and distribution to all other blocks All WLAN, Bluetooth, and FM interfaces with the host IC are managed by the support block. DC power-supply gating and distribution to all other blocks Package and other features Small package - 3.805 x 3.82 x 0.63 mm 79B WLNSP, 0.4 mm pitch Many ground pins for improved electrical grounding, mechanical strength, and thermal continuity Few external components required RoHS-compliant LM80-P0436-70 Rev. B MAY CONTAIN U.S. AND INTERNATIONAL EXPORT CONTROLLED INFORMATION 13 WCN3680B/WCN3660B Device Specification 1.3.8 Introduction Summary of key WCN3680B/WCN3660B features Table 1-3 Key WCN3680B/WCN3660B features Feature WCN3680B/WCN3660B capability System Highly integrated WLAN + Bluetooth Automated calibration Combination IC with WLAN, Bluetooth, and FM radio functionality Low parts count and minimal PCB area Eliminates external PA and LNA matching, and Tx/Rx RF switching Concurrent reception in the 2.4 GHz band PTA modes for coexistence No factory calibration required WLAN RF (digital processing in companion host IC) Dual-band support 2.4 GHz and 5 GHz RF transceivers Supports 2.4 GHz and 5 GHz external PA LTE/ISM coexistence support WCN3660B: Supports HT20 and HT40 rates WCN3680B: Supports HT20/VHT20, HT40VHT40, and VHT80 rates Simple host interfaces 4-line analog baseband interface with Rx/Tx multiplexing 5-line digital command-and-control interface IEEE 802.11a/b/g/n compliant With companion IC Other solution-level features WoWLAN support Support for MCS 0 through 7; up to 150 Mbps data rates Support for MCS 0 through 9; up to 433 Mbps data rates on WCN3680B STBC support Support for short guard interval Infrastructure, ad-hoc, AP, and Wi-Fi direct operating modes Bluetooth radio Bluetooth specification compliance 4.x compliant; 1.x, 2.x + EDR, and 3.0 backward compatible Highly integrated Baseband modem and 2.4 GHz transceiver; improved Rx sensitivity Simple host interfaces 2-line digital data interface supports Rx and Tx SSBI for status and control Supported modulation GFSK, /4-DQPSK, and 8DPSK (in both directions) Connectivity Digital processing Up to seven total wireless connections Up to 3.5 piconets (master, slave, and page scanning) One SCO or eSCO connection Modem Support for all BR, EDR, and BLE packet types RF Tx power levels Class 1 and 2 transmissions without requiring an external PA LPPS Reduced device power consumption ANT Enables communication between self-powered devices LM80-P0436-70 Rev. B MAY CONTAIN U.S. AND INTERNATIONAL EXPORT CONTROLLED INFORMATION 14 WCN3680B/WCN3660B Device Specification Table 1-3 Introduction Key WCN3680B/WCN3660B features (cont.) Feature WCN3680B/WCN3660B capability FM radio Worldwide FM band support 76 to 108 MHz, with 50 kHz channel spacing Highly integrated Baseband processing and RF receiver Data system support Radio data system for Europe (RDS) Simple host interfaces Radio broadcast data system for North America (RBDS) Single-line digital data interface supports Rx and Tx. SSBI for status and control Rx support External wired-headset antenna for Rx only Highly automated Search and seek; gain control; frequency control; noise cancellation; soft mute; high-cut control; mono/stereo blend; adjustment-free stereo decoder; programmable de-emphasis Top-level support Clock 48 MHz crystal 19.2 MHz for single-band 2.4G configuration if disabling 5G Clock buffering, gating, and distribution to all other blocks Host IC interfaces Manages all WLAN, Bluetooth, and FM interfaces DC power Gates and distributes power to all other blocks Fabrication technology Single die 65 nm RF CMOS Package Small, thermally efficient package 79 WLNSP: 3.805 x 3.82 x 0.63 mm; 0.4 mm pitch 1.4 Terms and acronyms Table 1-4 defines terms and acronyms commonly used throughout this document. Table 1-4 Terms and acronyms Term /4 DQPSK LM80-P0436-70 Rev. B Definition /4 rotated differential quadrature phase shift keying 8DPSK 8-state differential phase shift keying 16 QAM 16-state quadrature amplitude modulation 64 QAM 64-state quadrature amplitude modulation ACL Asynchronous connection-oriented link ADC Analog-to-digital converter AGC Automatic gain control AP Access point BB Baseband MAY CONTAIN U.S. AND INTERNATIONAL EXPORT CONTROLLED INFORMATION 15 WCN3680B/WCN3660B Device Specification Table 1-4 Terms and acronyms (cont.) Term Definition BER Bit error rate BLE Bluetooth low energy BMPS Beacon-mode power save BOM Bill of materials BPF Bandpass filter bps Bits per second BPSK BR Binary phase shift keying Basic rate CCK Complimentary code keying CDM Charged device model CDMA Code Division Multiple Access CLPC Closed loop power control DAC Digital-to-analog converter DBPSK Differential binary phase shift keying DEVM Differential error vector magnitude DNC DQPSK Do not connect Differential quadrature phase shift keying DTIM Delivery traffic indication message EDR Enhanced data rate EIRP Effective isotropic radiated power eSCO Extended synchronous connection-oriented ESD Electrostatic discharge ESR Effective series resistance ETSI European Telecommunications Standards Institute EVM Error vector magnitude FBPR Forbidden band power ratio FCC Federal Communication Commission FDD Frequency division duplexing FEM Front-end module FM Frequency modulation GFSK Gaussian frequency shift keying HBM Human body model HCI Host controller interface Hi-Z High impedance I/O Input/output kbps LM80-P0436-70 Rev. B Introduction Kilobits per second MAY CONTAIN U.S. AND INTERNATIONAL EXPORT CONTROLLED INFORMATION 16 WCN3680B/WCN3660B Device Specification Table 1-4 Introduction Terms and acronyms (cont.) Term Definition LSBit or LSByte Defines whether the LSB is the least significant bit or least significant byte. All instances of LSB used in this manual are assumed to be LSByte, unless otherwise specified. MSBit or MSByte Defines whether the MSB is the most significant bit or most significant byte. All instances of MSB used in this manual are assumed to be MSByte, unless otherwise specified. LNA LO Local oscillator LPF Low-pass filter LPO Low-power oscillator LPPS Low-power page scan MAC Medium access controller MCS Modulation coding scheme MPX Multiplex MRC Master reference clock NVM Nonvolatile memory PA Power amplifier PCB Printed circuit board PCM Pulse-coded modulation PDET Power detector PER Packet error rate PHY Physical layer PLL Phase-locked loop PM Power management PMIC Power management integrated circuit PTA Packet traffic arbitration QAM Quadrature amplitude modulation QoS Quality of service QPSK Quadrature phase shift keying QTI Qualcomm Technologies, Inc. RBDS RDS Radio broadcast data system for U.S.A. Radio data system for Europe RF Radio frequency RH Relative humidity RoHS LM80-P0436-70 Rev. B Low-noise amplifier Restriction of hazardous substances Rx Receive, receiver SBI Serial bus interface MAY CONTAIN U.S. AND INTERNATIONAL EXPORT CONTROLLED INFORMATION 17 WCN3680B/WCN3660B Device Specification Table 1-4 Introduction Terms and acronyms (cont.) Term SCO SCPC Definition Synchronous connection-oriented Self-calibrated power control SMT Surface-mount technology SoC System-on-Chip Sps Symbols per second (or samples per second) SSBI Single-wire SBI STBC Space-time block coding TCXO Temperature-compensated crystal oscillator TDD Time-division duplexing TIM Traffic indication map TKIP Temporal key integrity protocol T/R Transmit/receive Tx Transmit, transmitter uAPSD Unscheduled automatic power-save delivery VoIP Voice-over-internet protocol WAN Wide area network WEP Wired-equivalent privacy WLAN WLNSP WMM Wireless local area network Wafer-level nanoscale package Wi-Fi multimedia WMM-AC Wi-Fi multimedia access categories WoWLAN Wake-on-WLAN WPA Wi-Fi protected access XO Crystal oscillator ZIF Zero intermediate frequency 1.5 Special marks Table 1-5 defines special marks used in this document. Table 1-5 Mark Special marks Definition [ ] Brackets ([ ]) sometimes follow a pin, register, or bit name. These brackets enclose a range of numbers. For example, DATA[7:4] indicates a range that is 4 bits in length, or DATA[7:0] refers to all eight DATA pins. _N A suffix of _N indicates an active low signal. For example, RESIN_N. LM80-P0436-70 Rev. B MAY CONTAIN U.S. AND INTERNATIONAL EXPORT CONTROLLED INFORMATION 18 WCN3680B/WCN3660B Device Specification Table 1-5 Introduction Special marks (cont.) Mark Definition 0x0000 Hexadecimal numbers are identified with a 0x prefix in the number, for example, 0x0000. All numbers are decimal (base 10) unless otherwise specified. Nonobvious binary numbers have the term binary enclosed in parentheses at the end of the number, for example, 0011 (binary). | LM80-P0436-70 Rev. B A vertical bar in the outside margin of a page indicates that a change was made since the previous revision of this document. MAY CONTAIN U.S. AND INTERNATIONAL EXPORT CONTROLLED INFORMATION 19 2 Pad definitions The highly integrated WCN3680B/WCN3660B device is available in the 79B WLNSP that includes several ground pads for electrical grounding, mechanical strength, and thermal continuity. See Chapter 4 for package details. A high-level view of the pad assignments is shown in Figure 2-1. Figure 2-1 WCN3680B/WCN3660B pad assignments (top view) The WCN3680B/WCN3660B IC pad assignment in numeric order and location are shown in Table 2-1. LM80-P0436-70 Rev. B MAY CONTAIN U.S. AND INTERNATIONAL EXPORT CONTROLLED INFORMATION 20 WCN3680B/WCN3660B Device Specification Table 2-1 Pad definitions WCN3680B/WCN3660B IC pad assignment in numeric order and location Pad number Pad name Pad center (x) (m) Pad center (y) Pad diameter (m) 1 GND 1705.5 -1415 260 2 GND 1705.5 -849 260 3 VDD_BT_RXRF_1P3 1705.5 -283 260 4 VDD_BT_TXRF_3P3 1705.5 283 260 5 WL_BT_RFIO_2P4G 1705.5 849 260 6 VDD_WL_2GPA_1P3 1705.5 1415 260 7 VDD_BT_VCO_1P3 1422.5 -1698 260 8 GND 1422.5 -1132 260 9 VDD_WL_2GLNA_1P3 1422.5 0 260 10 GND 1422.5 566 260 11 VDD_WL_2GPA_3P3 1422.5 1132 260 12 GND 1422.5 1698 260 13 GND 1139.5 -1415 260 14 VDD_BT_BB_1P3 1139.5 -849 260 15 GND 1139.5 -283 260 16 WL_PDET_IN 1139.5 1415 260 17 VDD_BT_PLL_1P3 856.5 -1698 260 18 GND 856.5 -1132 260 19 BT_CTL 856.5 -566 260 20 GND 856.5 0 260 21 GND 856.5 566 260 22 GND 856.5 1132 260 23 GND 856.5 1698 260 24 BT_SSBI 573.5 -1415 260 25 VDD_BT_FM_DIG_1P3 573.5 -849 260 26 VDD_XO_1P8 573.5 -283 260 27 GND 573.5 283 260 28 NC 573.5 849 260 29 BT_DATA 290.5 -1698 260 30 VDD_DIG_1P2 290.5 -1132 260 31 XO_IN 290.5 -566 260 32 VDD_WL_LO_1P3 290.5 566 260 33 WL_CMD_CLK 290.5 1132 260 34 WL_EXTPA_CTRL1 290.5 1698 260 35 VDD_IO_1P8 7.5 -1415 260 LM80-P0436-70 Rev. B MAY CONTAIN U.S. AND INTERNATIONAL EXPORT CONTROLLED INFORMATION 21 WCN3680B/WCN3660B Device Specification Table 2-1 Pad definitions WCN3680B/WCN3660B IC pad assignment in numeric order and location (cont.) Pad number Pad name Pad center (x) (m) Pad center (y) Pad diameter (m) 36 CLK_OUT 7.5 -849 260 37 GND 7.5 -283 260 38 GND 7.5 283 260 39 GND 7.5 849 260 40 VDD_WL_UPC_1P3 7.5 1415 260 41 FM_DATA -275.5 -1698 260 42 GND -275.5 -1132 260 43 XO_OUT -275.5 -566 260 44 GND -275.5 0 260 45 VDD_WL_BB_1P3 -275.5 566 260 46 GND -275.5 1132 260 47 WL_RF_DA_OUT -275.5 1698 260 48 FM_SSBI -558.5 -1415 260 49 WL_EXTPA_CTRL2 -558.5 -849 260 50 VDD_WL_PLL_1P3 -558.5 -283 260 51 WL_BB_QP -558.5 283 260 52 WL_EXTPA_CTRL0 -558.5 849 260 53 GND -558.5 1415 260 54 VDD_FM_RXBB_1P3 -841.5 -1698 260 55 GND -841.5 -1132 260 56 WL_EXTPA_CTRL4 -841.5 -566 260 57 WL_BB_QN -841.5 0 260 58 WL_BB_IP -841.5 566 260 59 VDD_WL_5GPA_1P3 -841.5 1132 260 60 GND -841.5 1698 260 61 FM_HS_RX -1124.5 -1415 260 62 GND -1124.5 -849 260 63 WL_CMD_SET -1124.5 -283 260 64 WL_BB_IN -1124.5 283 260 65 GND -1124.5 849 260 66 GND -1124.5 1415 260 67 GND -1407.5 -1698 260 68 WL_EXTPA_CTRL3 -1407.5 -1132 260 69 VDD_FM_PLL_1P3 -1407.5 -566 260 70 WL_CMD_DATA1 -1407.5 0 260 LM80-P0436-70 Rev. B MAY CONTAIN U.S. AND INTERNATIONAL EXPORT CONTROLLED INFORMATION 22 WCN3680B/WCN3660B Device Specification Table 2-1 Pad definitions WCN3680B/WCN3660B IC pad assignment in numeric order and location (cont.) Pad number Pad name Pad center (x) (m) Pad center (y) Pad diameter (m) 71 WL_CMD_DATA0 -1407.5 566 260 72 WL_RFIO_5G/RF_5GHZ_RX -1407.5 1132 260 73 VDD_WL_5GPA_3P3 -1407.5 1698 260 74 VDD_FM_RXFE_1P3 -1690.5 -1415 260 75 VDD_FM_VCO_1P3 -1690.5 -849 260 76 GND -1690.5 -283 260 77 WL_CMD_DATA2 -1690.5 283 260 78 VDD_WL_5GLNA_1P3 -1690.5 849 260 79 GND -1690.5 1415 260 2.1 I/O parameter definitions Table 2-2 I/O description (pad type) parameters Symbol Description Pad attribute AI Analog input (does not include pad circuitry) AO Analog output (does not include pad circuitry) B Bidirectional digital with CMOS input DI Digital input (CMOS) DO Digital output (CMOS) Z High-impedance (high-Z) output Pad pull details for digital I/Os NP Contains no internal pull PU Contains an internal pull-up device PD Contains an internal pull-down device Pad voltages for digital I/Os LM80-P0436-70 Rev. B DIO Digital interfaces with the host IC VDD_IO_1P8 EPA Control signals to external FEM (VDD_xxx_3P3) MAY CONTAIN U.S. AND INTERNATIONAL EXPORT CONTROLLED INFORMATION 23 WCN3680B/WCN3660B Device Specification Pad definitions 2.2 Pad descriptions Descriptions of all pads are presented in the following tables, organized by functional group: Table 2-3 WLAN functions Table 2-4 WLAN pad type vs. operating mode Table 2-5 BT functions Table 2-6 BT pad type vs. operating mode Table 2-7 Shared WLAN and BT RF front-end functions Table 2-8 FM radio functions Table 2-9 FM pad type vs. operating mode Table 2-10 Top-level support functions Table 2-11 No connection, do not connect, and reserved pads Table 2-12 Power supply (PWR) pads Table 2-13 Ground (GND) pads LM80-P0436-70 Rev. B MAY CONTAIN U.S. AND INTERNATIONAL EXPORT CONTROLLED INFORMATION 24 WCN3680B/WCN3660B Device Specification Pad definitions Pad descriptions - WLAN functions1 Table 2-3 Pad no. Pad name Pad voltage Pad type vs. operating mode Functional description active standby sleep AI, AO AI, AO AI, AO WLAN 2.4 GHz and 5 GHz driver amp output port for external PA WLAN 5 GHz RF input/output port RF input/output pads 47 WL_RF_DA_OUT 72 WL_RFIO_5G - AI, AO AI, AO AI, AO 16 WL_PDET_IN - AI AI AI WLAN Tx power detector input (2.4 and 5 GHz) - Also see Table 2-7 for shared WLAN + BT RF front-end pads Rx/Tx analog baseband interface with host IC 58 WL_BB_IP - AI, AO AI, AO AI, AO WLAN baseband differential in-phase - positive (multiplexed Rx/Tx) 64 WL_BB_IN - AI, AO AI, AO AI, AO WLAN baseband differential in-phase - negative (multiplexed Rx/Tx) 51 WL_BB_QP - AI, AO AI, AO AI, AO WLAN baseband differential quadrature - positive (multiplexed Rx/Tx) 57 WL_BB_QN - AI, AO AI, AO AI, AO WLAN baseband differential quadrature - negative (multiplexed Rx/Tx) External FEM controls 1. 34 WL_EXTPA_CTRL1 EPA DO-PD DO-PD DO-NP WLAN external FEM control bit 1 (5 GHz) NC; an external FEM is not used 49 WL_EXTPA_CTRL2 EPA DO-PD DO-PD DO-NP WLAN external FEM control bit 2 (2.4 GHz) NC; an external FEM is not used 56 WL_EXTPA_CTRL4 EPA DO-PD DO-PD DO-NP WLAN external FM control bit 4 (2.4 GHz) NC; an external FEM is not used 68 WL_EXTPA_CTRL3 EPA DO-PD DO-PD DO-NP WLAN external FEM control bit 3 (2.4 GHz) NC; an external FEM is not used 52 WL_EXTPA_CTRL0 EPA DO-PD DO-PD DO-NP WLAN external FEM control bit 0 (5 GHz) NC; an external FEM is not used Refer to Table 2-2 for parameter and acronym definitions. Table 2-4 Pad no. WLAN pad type vs. operating mode WLAN off BT/FM off Pad name WLAN off BT/FM on WLAN on BT/FM off WLAN on BT/FM on WLAN low-power mode BT/FM off WLAN low-power mode BT/FM on Notes WLAN command interface with host IC 77 WL_CMD_DATA2 Z DO-NP DO-NP/ DI-PD DO-NP/ DI-PD Z DO-NP In active mode, the CMD_DATA lines will be to DO-NP, then changes to DO-PD when CMD_SET signal changes state 70 WL_CMD_DATA1 Z DO-NP DO-NP/ DI-PD DO-NP/ DI-PD Z DO-NP In active mode, the CMD_DATA lines will be to DO-NP, then changes to DO-PD when CMD_SET signal changes state 71 WL_CMD_DATA0 Z DO-NP DO-NP/ DI-PD DO-NP/ DI-PD Z DO-NP In active mode, the CMD_DATA lines will be to DO-NP, then changes to DO-PD when CMD_SET signal changes state LM80-P0436-70 Rev. B MAY CONTAIN U.S. AND INTERNATIONAL EXPORT CONTROLLED INFORMATION 25 WCN3680B/WCN3660B Device Specification Table 2-4 Pad no. Pad definitions WLAN pad type vs. operating mode (cont.) Pad name WLAN off BT/FM off WLAN off BT/FM on WLAN on BT/FM off WLAN on BT/FM on WLAN low-power mode BT/FM off WLAN low-power mode BT/FM on Notes 63 WL_CMD_SET Z DI-PD DI-PD DI-PD Z DI-PD Z when WLAN/BT/FM is off or in power collapse, otherwise DI-PD 33 WL_CMD_CLK Z DI-PD DI-PD DI-PD Z DI-PD Z when WLAN/BT/FM is off or in power collapse, otherwise DI-PD Table 2-5 Pad no. Pad descriptions - BT functions1 Pad name Pad voltage Pad type vs. operating mode active standby Functional description sleep RF input/output pads - 1. See Table 2-7 for shared WLAN + BT RF front-end pads Refer to Table 2-2 for parameter and acronym definitions. Table 2-6 Pad no. BT pad type vs. operating mode Pad name BT off FM off BT off FM on BT on, active FM off BT on, active FM on BT on, idle FM off BT on, idle FM on Notes BT data interface with host IC 29 BT_DATA Z Z B-PD B-PD B-PD/Z B-PD/Z Z when WLAN is off or in power collapse, otherwise P-PD 19 BT_CTL Z Z DI-PD DI-PD DI-PD/Z DI-PD/Z Z when WLAN is off or in power collapse, otherwise DI-PD B-PD B-PD B-PD/Z B-PD/Z Z when WLAN is off or in power collapse, otherwise B-PD BT status and control interface with host IC 24 BT_SSBI Table 2-7 Pad no. 5 1. Z Z Pad descriptions - shared WLAN and BT RF front-end functions 1 Pad name WL_BT_RFIO_2P4G Pad voltage - Pad type vs. operating mode active standby sleep AI, AO AI, AO AI, AO Functional description WLAN 2.4 GHz and BT RF input/output port Refer to Table 2-2 for parameter and acronym definitions. Table 2-8 Pad no. Pad descriptions - FM radio functions 1 Pad name Pad voltage Pad type vs. operating mode active standby sleep AI AI AI Functional description RF input/output pads 61 1. FM_HS_RX - FM radio headset RF receiver input port Refer to Table 2-2 for parameter and acronym definitions. LM80-P0436-70 Rev. B MAY CONTAIN U.S. AND INTERNATIONAL EXPORT CONTROLLED INFORMATION 26 WCN3680B/WCN3660B Device Specification Table 2-9 Pad no. Pad definitions FM pad type vs. operating mode BT off FM off Pad name BT off FM on BT on, active FM off BT on, active FM on BT on, idle FM off BT on, idle FM on B-PD Z B-PD Z B-PD Z B-PD Z B-PD FM data interface with host IC 41 FM_DATA Z FM status and control interface with host IC 48 FM_SSBI Table 2-10 Pad no. 1. Z B-PD Pad descriptions - top-level support functions 1 Pad name Pad voltage Pad type vs. operating mode active standby sleep Functional description 31 XO_IN - AI AI AI Dual function: XTAL input connection if external crystal is used XO input if external clock source is used 43 XO_OUT - AO AO AO Dual function: XTAL output connection if external crystal is used Do not connect (DNC) if external clock source is used 36 CLK_OUT DIO DO-PD DO-PD DO-NP 24 MHz clock output to WCN subsystem block in the host for synchronization Refer to Table 2-2 for parameter and acronym definitions. Table 2-11 Pad descriptions - no connection, do not connect, and reserved pads Pad no. 28 LM80-P0436-70 Rev. B Pad name NC Functional description No connect; not connected internally MAY CONTAIN U.S. AND INTERNATIONAL EXPORT CONTROLLED INFORMATION 27 WCN3680B/WCN3660B Device Specification Table 2-12 Pad definitions Pad descriptions - power supply pads Pad no. Pad name Functional description 25 VDD_D_FM_DIG_1P3 Power for Bluetooth/FM digital circuits (1.3 V) 14 VDD_BT_BB_1P3 Power for Bluetooth baseband circuits (1.3 V) 17 VDD_BT_PLL_1P3 Power for Bluetooth PLL circuits (1.3 V) 3 VDD_BT_RXRF_1P3 Power for Bluetooth RF receiver circuits (1.3 V) 4 VDD_BT_TXRF_3P3 Power for Bluetooth RF transmitter circuits (3.3 V) 7 VDD_BT_VCO_1P3 Power for Bluetooth VCO circuits (1.3 V) 30 VDD_DIG_1P2 Output voltage from WCN3680B/WCN3660B internal LDO for external decoupling capacitor connections 35 VDD_IO_1P8 Power for WCN digital I/O circuits (1.8 V) 69 VDD_FM_PLL_1P3 Power for FM PLL circuits (1.3 V) 54 VDD_FM_RXBB_1P3 Power for FM baseband receiver circuits (1.3 V) 74 VDD_FM_RXFE_1P3 Power for FM receiver front-end circuits (1.3 V) 75 VDD_FM_VCO_1P3 Power for FM VCO circuits (1.3 V) 9 VDD_WL_2GLNA_1P3 Power for WLAN 2.4 GHz LNA circuits (1.3 V) 6 VDD_WL_2GPA_1P3 Power for WLAN 2.4 GHz PA circuits (1.3 V) 11 VDD_WL_2GPA_3P3 Power for WLAN 2.4 GHz PA circuits (3.3 V) 78 VDD_WL_5GLNA_1P3 Power for WLAN 5 GHz LNA circuits (1.3 V) 59 VDD_WL_5GPA_1P3 Power for WLAN 5 GHz PA circuits (1.3 V) 73 VDD_WL_5GPA_3P3 Power for WLAN 5 GHz PA circuits (3.3 V) 45 VDD_WL_BB_1P3 Power for WLAN baseband circuits (1.3 V) 32 VDD_WL_LO_1P3 Power for WLAN LO circuits (1.3 V) 50 VDD_WL_PLL_1P3 Power for WLAN PLL circuits (1.3 V) 40 VDD_WL_UPC_1P3 Power for WLAN upconverter circuits (1.3 V) 26 VDD_XO_1P8 Power for XO circuits (1.8 V) Table 2-13 Pad descriptions - ground pads Pad no. Pad name 1, 2, 8, 10, 12, 13, 15, 18, 20, 21, 22, 23, 27, 37, 38, 39, 42, 44, 46, 53, 55, 60, 62, 65, 66, 67, 76, 79 LM80-P0436-70 Rev. B GND Functional description Ground MAY CONTAIN U.S. AND INTERNATIONAL EXPORT CONTROLLED INFORMATION 28 3 Electrical specifications 3.1 Absolute maximum ratings Operating the WCN3680B/WCN3660B IC under conditions beyond its absolute maximum ratings (Table 3-1) damages the device. Absolute maximum ratings are limiting values to consider individually when all other parameters are within their specified operating ranges. Functional operation and specification compliance under any absolute maximum condition, or after exposure to any of these conditions, is not guaranteed or implied. Exposure affects device reliability. Table 3-1 Absolute maximum ratings1 Parameter Min Max Units VDD_xxx_1P3 Power for WCN analog, digital, and RF core circuits -0.5 3.0 V VDD_IO_1P8 Power for WCN digital I/O circuits -0.5 3.0 V VDD_XO_1P8 Power for WCN XO circuits -0.5 3.0 V VDD_xxx_3P3 Power for WLAN 5 GHz and 2.4 GHz PA driver amplifier circuits -0.5 3.6 V VIN Voltage applied to any non-power I/O pad 2 -0.5 VDDX + 0.3 V ESD protection - see Section 7.1. Thermal considerations - see Section 7.1. 1. The characters xxx indicate several missing characters in a power-supply pad's name. For example, the parameter values listed for VDD_xxx_1P3 apply to VDD_BT_FM_DIG_1P3, VDD_BT_BB_1P3, and so on. 2. VDDX is the supply voltage associated with the input or output pad to which the test voltage is applied. LM80-P0436-70 Rev. B MAY CONTAIN U.S. AND INTERNATIONAL EXPORT CONTROLLED INFORMATION 29 WCN3680B/WCN3660B Device Specification Electrical specifications 3.2 Operating conditions If the absolute maximum ratings have never been exceeded, the WCN3680B/WCN3660B device meets all performance specifications listed in Section 3.3 through Section 3.11 when used within the operating conditions, unless otherwise noted in those sections. Table 3-2 Operating conditions 1 Parameter Min Typ Max Units VDD_xxx_1P3 Power for WCN analog, digital, and RF core circuits 1.25 1.30 1.38 V VDD_IO_1P8 Power for WCN digital I/O circuits 1.70 1.80 1.90 V VDD_XO_1P8 Power for XO circuits 1.70 1.80 1.90 V VDD_xxx_3P3 Power for WLAN 5 GHz and 2.4 GHz PA driver amplifier circuits 2 2.90 3.30 3.37 V TOP Case Operating temperature -30 25 85 C 1. The characters xxx indicate several missing characters in a power-supply pad's name. For example, the parameter values listed for VDD_xxx_1P3 apply to VDD_BT_FM_DIG_1P3, VDD_BT_BB_1P3, and so on. 2. WCN VDD_xxx_3P3 can operate down to 2.9 V; however, RF performance is not guaranteed. 3.3 DC power characteristics 3.3.1 Power mode definitions The WCN3680B/WCN3660B device's DC power consumption, expressed in terms of supply current, is specified as the typical total input current into the device during active operation. This is the current drawn from the primary power source that powers the internal regulator and other circuits. Values specified in this section are estimates to use as general guidelines for WCN3680B/WCN3660B IC product designs. The stated modes assume that the WLAN, Bluetooth + FM wireless technology circuits are operating in compliance with applicable standards. The average power consumption values for different operating modes depend on the system state. LM80-P0436-70 Rev. B MAY CONTAIN U.S. AND INTERNATIONAL EXPORT CONTROLLED INFORMATION 30 WCN3680B/WCN3660B Device Specification 3.3.2 Electrical specifications Power consumption Table 3-3 lists the typical measured supply currents into the WCN3680B/WCN3660B devices. They are the average measurement based on operation at room temperature (+25C) using default settings and nominal supply voltages, such as VDD_XO_1P8 = 1.8 V, VDD_IO_1P8 = 1.8 V, VDD_xxx_1P3 = 1.3 V, and VDD_xxx_3P3 = 3.3 V. Table 3-3 Input power supply current from primary source 1.8 V IO 1.8 V XO VDD_xxx_1P3 VDD_xxx_3P31 1.2 A 0.5 A 35 A 2 A BT Tx class 2, 4 dBm 500 A 2 mA 50 mA 0 BT Tx class1, 11 dBm 500 A 2 mA 35 mA 30 mA BT Rx 2.4 mA 2 mA 25 mA 0 400 A 2 mA 15 mA 1 A 2.4G, 11b, 11 Mbps, 19 dBm 1.32 mA 2.0 mA 107 mA 180 mA 2.4G, 11g, 6 Mbps, 17 dBm 1.32 mA 2.0 mA 98 mA 143 mA 2.4G, 11g, 6 Mbps, 15 dBm 1.32 mA 2.0 mA 96 mA 117 mA 2.4G, 11n, 72 Mbps, 13 dBm 1.32 mA 2.0 mA 95 mA 100 mA 24 A 2.18 mA 65 mA 41 A 5G, 11a, 6 Mbps, 16 dBm 1.33 mA 7.0 mA 198 mA 180 mA 5G, 11a, 54 Mbps, 14 dBm 1.33 mA 7.0 mA 196 mA 151 mA 5G, 11a, 72 Mbps, 12 dBm 1.33 mA 7.0 mA 195 mA 133 mA 24 A 6.6 mA 75 mA 40 A Mode Shutdown BT current consumption FM current consumption FM Rx WLAN current consumption 2.4 GHz WLAN Rx 2G 5 GHz WLAN Rx 5G 1. For internal PA only LM80-P0436-70 Rev. B MAY CONTAIN U.S. AND INTERNATIONAL EXPORT CONTROLLED INFORMATION 31 WCN3680B/WCN3660B Device Specification Electrical specifications 3.4 Power sequencing The WCN3680B/WCN3660B device requires the following powerup sequence: For APQ8016E: 1.3 V(S3) 1.8_IO (L5) 1.8V_XO(L7) 3.3V_PA (L9) For all other platforms: Either VDD_XO_1P8 or VDD_IO_1P8 Either VDD_xxx_1P3 or VDD_xxx_3P3 To power down the device, the following sequence is required: For APQ8016E: 3.3V_PA (L9) 1.8V_IO (L5) 1.8_XO (L7) 1.3V(S3) For all other platforms: VDD_xxx_1P3 and VDD_xxx_3P3 Either VDD_XO_1P8 or VDD_IO_1P8 NOTE If 1.3 V is off before 3.3 V, the interval between 1.3 V off and 3.3 V off must be very short. Any leakage current can be ignored. 3.5 WCN3680B/WCN3660B internal LDO regulator The WCN3680B/WCN3660B has an on-chip LDO regulator to provide power supply to the WCN3680B/WCN3660B 1.2 V digital core. The integrated LDO input voltage is applied from the VDD_XO_1P8 voltage. The output pad of this internal LDO is VDD_DIG_1P2 (pad 30). The output at this pad is used to connect decoupling capacitors to reduce supply noise. The WCN3680B/WCN3660B device integrated regulator is intended for use with an on-chip load only. They are not designed to supply external loads. 3.6 Digital logic characteristics Specifications for the digital I/Os depend on the associated supply voltage (identified as VIO in Table 3-4). Table 3-4 Baseband digital I/O characteristics Parameter Comments Min Typ Max Units VIH High-level input voltage 0.70x VIO - VIO + 0.3 V VIL Low-level input voltage -0.3x - 0.30 * VIO V VSHYS Schmitt hysteresis voltage - 300 - mV IIH Input high leakage current V_IN = VIO max -1.0x - 1.0 A IIL Input low leakage current V_IN = 0 V; supply = VIO max -1.0x - 1.0 A RPULL Input pull resistor 1 Up or down - 375 k - k VOH High-level output voltage VIO - 0.4x - VIO V LM80-P0436-70 Rev. B MAY CONTAIN U.S. AND INTERNATIONAL EXPORT CONTROLLED INFORMATION 32 WCN3680B/WCN3660B Device Specification Table 3-4 Electrical specifications Baseband digital I/O characteristics (cont.) Parameter Comments Min Typ Max Units VOL Low-level output voltage 0 - 0.4 V IOH High-level output current 1.0 - - mA IOL Low-level output current - - -1.0 mA CIN Input capacitance 2 - - 5 pF 1. Resistor values can be increased by 50% when 3.3 V I/O is used. 2. Guaranteed by design but not 100% tested. 3.7 Timing characteristics Specifications for the device timing characteristics are included, where appropriate, under each function's section, along with its other performance specifications. Some general comments about timing characteristics are included here. All WCN3680B/WCN3660B devices are characterized with actively terminated loads, so all baseband timing parameters in this document assume no bus loading. This is described in Section 3.7.2. NOTE 3.7.1 Timing diagram conventions Figure 3-1 shows the conventions used within timing diagrams throughout this document. Waveform Description Don't care or bus is driven. Signal is changing from low to high. Signal is changing from high to low. Bus is changing from invalid to valid. Keeper Bus is changing from valid to keeper. Bus is changing from Hi-Z to valid. Denotes multiple clock periods. Figure 3-1 LM80-P0436-70 Rev. B Timing diagram conventions MAY CONTAIN U.S. AND INTERNATIONAL EXPORT CONTROLLED INFORMATION 33 WCN3680B/WCN3660B Device Specification 3.7.2 Electrical specifications Rise and fall time specifications The testers that characterize WCN3680B/WCN3660B devices have actively terminated loads, making the rise and fall times quicker (mimicking a no-load condition). Figure 3-2 shows the impact that different external load conditions have on rise and fall times. Specified switch low points (active terminated load) Specified switch high points (active terminated load) Actual switch low point at 30 pF VDD_PX VOH Simulated driving 30 pF signal load VOL Actual switch high point at 30 pF 0V Actual switch low point at 80 pF VDD_PX VOH Simulated driving 80 pF signal load VOL Actual switch high point at 80 pF 0V Figure 3-2 Rise and fall times under different load conditions To account for external load conditions, rise or fall times must be added to parameters that start timing at the WCN device and terminate at an external device (or vice versa). Adding these rise and fall times is equivalent to applying capacitive load derating factors, and Table 3-5 lists the recommended derating factors. Table 3-5 Capacitive load derating factors Parameter 1.8 V I/O Drive = 1.0 mA Units Rise time, 10% to 90% 0.29 maximum ns/pF Fall time, 90% to 10% 0.19 maximum ns/pF 3.8 Top-level support 3.8.1 I/O block Modem IC interfaces for WLAN, BT, and FM radio are supported by this block; pertinent specifications are covered within Section 3.6. LM80-P0436-70 Rev. B MAY CONTAIN U.S. AND INTERNATIONAL EXPORT CONTROLLED INFORMATION 34 WCN3680B/WCN3660B Device Specification 3.8.2 Electrical specifications Master reference clock requirements For 2.4 GHz WLAN operation only, the WCN3660B device requires one 19.2 MHz clock signal that can be generated externally (usually by the PMIC), or can be generated by the external 19.2 MHz crystal. This master reference clock (MRC) is the timing source for all operational functions during active modes. When an external source is used, that signal must be AC-coupled into the XO_IN pad. For single-band operation at 5.0 GHz or dual-band operation at 2.4 and 5.0 GHz, the WCN3680B/WCN3660B device requires a 48.0 MHz clock from an external crystal. This clock signal is required due to more stringent phase noise requirements when operating the device at 5.0 GHz. Table 3-6 lists the requirements for operation at 5.0 GHz only or operation at both 2.4 GHz and 5.0 GHz (MRC = 48 MHz). Table 3-6 Reference requirements Parameter Condition Min Typ Max Units - 19.2 - MHz Frequency variation over temperature/aging -20 - 20 ppm Duty cycle of output signal 43.5 50 55 % Voltage swing 0.8 - 2.0 Vpp f = 1 kHz - -130 -128 dBc/Hz f = 10 kHz - -144 -142 dBc/Hz f = 100 kHz - -151 -148 dBc/Hz f = 1 MHz - -152 -150 dBc/Hz - - -30 dBc 19.2 MHz TCXO Output frequency Output phase noise Output spur specification 48 MHz XTAL - See 48 MHz Crystal for 5 GHz WLAN Connectivity Products Mini-Specification (80-N8644-2) for the WCN3680B/WCN3660B 48 MHz crystal mini-specifications. 48 MHz XO Operating frequency 24 MHz CLK_OUT - 48 - MHz Operating frequency - 24 - MHz Voltage swing - 1.81 - Vpp 1. 24 MHz clock on pad 36 (CLK_OUT) is a divide-by-2 version of the 48 MHz XTAL ref clock. An external circuit can be used to reduce the clock swing to 0.4 Vpp for special use case. 3.8.3 DC power gating and distribution See Section 3.3 and Section 3.4. LM80-P0436-70 Rev. B MAY CONTAIN U.S. AND INTERNATIONAL EXPORT CONTROLLED INFORMATION 35 WCN3680B/WCN3660B Device Specification Electrical specifications 3.9 WLAN RF circuits The following sections provide performance specifications for the WLAN RF transmitter and receiver circuits over the full operating power-supply voltage range and temperature range shown in Table 3-2. Unless noted otherwise, all measurements are taken at the chip RF I/O pads and all typical performance specifications, are based on operation at room temperature (+25C) using default parameter settings and nominal supply voltages, such as VDD_xxx_1P3 = 1.3 V, VDD_ IO_1P8 = 1.8 V, VDD_XO_1P8 = 1.8 V, and VDD_xxx_3P3 = 3.3 V. Maximum and minimum ratings are guaranteed specifications for production-qualified parts. The WCN3680B/WCN3660B device complies with 802.11d requirements, where transmit output power is limited per country code. Figure 3-3 and Figure 3-4 illustrate dual-band and single-band RF connections of the WCN3680B/WCN3660B using SCPC as the default power-control mechanism. The WCN3680B/WCN3660B supports an external RF coupler or SCPC power control. The default option in the WCN3680B/WCN3660B is SCPC. For designs that require very tight output power variation range, an external coupler option is available. WL_BT_RFIO Shared RF FE LPF LNA (shared) WLAN WL_PDET_IN WLAN 2.4G quadrature downconvert wl_5g_rx_lo wl_5g_tx_lo wl_2p4g_tx_lo wl_2p4g_rx_lo WL_REF PA WL_EPA _CTL1 LPF wl_2p4g_tx_lo switching & matching WL_EPA _CTL0 WLAN TX WLAN 5G quadrature upconvert PA WL_CMD_DATA2 WL_CMD_DATA1 WL_CMD_DATA0 WL_CMD_CLK WL_CMD_SET WL_BB_IP WL_BB_IN WL_BB_QP WL_BB_QN Multiplexing WLAN RX wl_5g_tx_lo LPF WLAN 5G quadrature downconvert LPF LNA WLAN RF Figure 3-3 on-chip stat & ctl LPF WLAN 2.4G quadrature upconvert power detect WL_RFIO_5G WLAN LO synthesizer & distribution wl_2p4g_rx_lo external PA controls diplexer BPF WLAN status & control 2.4 & 5 GHz WLAN & BT switch & match Dual-band (2.4/5 GHz) LPF wl_5g_rx_lo RF connections for dual-band (2.4 GHz and 5.0 GHz) using SCPC Single-band (2.4 GHz) Shared RF FE LPF LNA (shared) WL_PDET_IN WLAN WLAN 2.4G quadrature downconvert WL_REF PA power detect WLAN 2.4G quadrature upconvert LPF WLAN TX switching & matching WL_EPA _CTL0 Multiplexing WL_CMD_DATA2 WL_CMD_DATA1 WL_CMD_DATA0 WL_CMD_CLK WL_CMD_SET WL_BB_IP WL_BB_IN WL_BB_QP WL_BB_QN WLAN RX LPF LM80-P0436-70 Rev. B WL_EPA _CTL1 wl_5g_tx_lo LNA Figure 3-4 on-chip stat & ctl LPF WLAN 5G quadrature upconvert PA WLAN RF WLAN LO synthesizer & distribution wl_2p4g_rx_lo wl_2p4g_tx_lo WL_RFIO_5G wl_5g_rx_lo wl_5g_tx_lo wl_2p4g_tx_lo wl_2p4g_rx_lo WLAN status & control WL_BT_RFIO external PA controls BPF switch & match 2.4GHz WLAN & BT WLAN 5G quadrature downconvert LPF LPF wl_5g_rx_lo RF connections for single-band (2.4 GHz) using SCPC MAY CONTAIN U.S. AND INTERNATIONAL EXPORT CONTROLLED INFORMATION 36 WCN3680B/WCN3660B Device Specification 3.9.1 Electrical specifications WLAN 2.4 GHz RF Tx The WCN3680B/WCN3660B IC WLAN RF transmitter is specified for WLAN 802.11n and 802.11ac standards, while guaranteeing FCC transmit-mask compliance across the band. 3.9.1.1 Internal PA Table 3-7 WLAN 2.4 GHz RF Tx performance specifications1 Parameter Condition RF output frequency range Min Typ Max Units 2.4 - 2.496 GHz 11b (1 Mbps) Mask and EVM-compliant - 20.8 - dBm 11b (11 Mbps) Mask and EVM-compliant - 20.8 - dBm 11g (6 Mbps) Mask and EVM-compliant - 18.8 - dBm 11g (54 Mbps) Mask and EVM-compliant - 16.8 - dBm 11n, HT20 (MCS0) Mask and EVM-compliant - 17.8 - dBm 11n, HT20 (MCS7) Mask and EVM-compliant - 15.2 - dBm 11ac, VHT20 (MCS0) WCN3680B only; mask and EVMcompliant - 17.8 - dBm 11ac, VHT20 (MCS7) WCN3680B only; mask and EVMcompliant - 15.2 - dBm 11ac, VHT20 (MCS8) WCN3680B only; mask and EVMcompliant - 14.8 - dBm Tx output range at antenna At any rate 8 - 20 dBm Self-calibrated power control (SCPC) At room temperature and VSWR 1.5:1 - 2.0 - dB Closed-loop power control (CLPC) with external coupler At room temperature and VSWR 1.5:1 - 1.1 - dB 1. Refer to the IEEE 802.11 specifications for transmit spectrum limits: 802.11b mask (18.4.7.3) 802.11g mask (19.5.4) 802.11g EVM (17.3.9.6.3) 802.11n HT20 mask (20.3.21.1) 802.11n HT20 EVM (20.3.21.7.3) 802.11ac mask (22.3.18.1, draft 4.0) 802.11ac EVM (22.3.18.4.3 and 22.3.18.4.4, draft 4.0) 2. MCS8 and MCS9 are optional 11ac data rates. 3. If MCS9 is a product requirement, an external FEM is required. LM80-P0436-70 Rev. B MAY CONTAIN U.S. AND INTERNATIONAL EXPORT CONTROLLED INFORMATION 37 WCN3680B/WCN3660B Device Specification Electrical specifications 3.9.1.2 WLAN 2.4 GHz RF Tx desensitization of WAN receivers The WLAN transmissions can leak into the device's wide area network (WAN) and GPS receivers and cause desensitization, potentially limiting concurrency. To evaluate concurrency limitations, the following factors were considered: WLAN to WAN Worst-case WLAN-to-WAN antenna isolation = 10 dB Tolerable WAN desensitization = 0.3 dB WAN receiver noise figure = 6 dB WLAN to GPS Worst-case WLAN-to-GPS antenna isolation = 10 dB Tolerable GPS receiver desensitization = 0.2 dB GPS receiver noise figure = 3 dB WLAN transmitter characteristics WLAN effective isotropic radiated power (EIRP) = 15 dBm A highly selective bandpass filter (integrated in a FEM) is shared by Tx and Rx The resulting WLAN Tx requirements for WAN concurrency are summarized in Table 3-8. Table 3-8 WLAN RF Tx emission specifications for WAN concurrency 1 WAN or GPS band Frequency range Max Tx level in Rx band 1574 to 1577 MHz -136 dBm/Hz Cell (BC0) 869 to 894 MHz -128 dBm/Hz PCS (BC1) 1930 to 1990 MHz -128 dBm/Hz 832 to 870 MHz -128 dBm/Hz KPCS (BC4) 1840 to 1870 MHz -128 dBm/Hz IMT (BC6) 2110 to 2170 MHz -128 dBm/Hz AWS (BC15) 2110 to 2155 MHz -128 dBm/Hz GSM 850 869 to 894 MHz -128 dBm/Hz GSM 900 925 to 960 MHz -128 dBm/Hz GSM 1800 1805 to 1880 MHz -128 dBm/Hz GSM 1900 1930 to 1990 MHz -128 dBm/Hz GPS CDMA bands JCDMA (BC3) GSM bands 1. Specifications apply under the following conditions: 11g signal at 17.5 dBm, 45C ambient temperature, over voltage, and over process. LM80-P0436-70 Rev. B MAY CONTAIN U.S. AND INTERNATIONAL EXPORT CONTROLLED INFORMATION 38 WCN3680B/WCN3660B Device Specification 3.9.2 Electrical specifications WLAN 2.4 GHz RF Rx The WCN3680B/WCN3660B device WLAN RF receiver is specified for the WLAN 802.11n and 802.11ac standard. 3.9.2.1 WLAN 2.4 GHz RF Rx performance Table 3-9 WLAN 2.4 GHz RF Rx performance specifications Parameter Condition RF output frequency range Min Typ Max Units 2.4 - 2.496 GHz 11b (1 Mbps) At WCN3680B/WCN3660B - -97.8 - dBm 11b (11 Mbps) At WCN3680B/WCN3660B - -89.8 - dBm 11g (6 Mbps) At WCN3680B/WCN3660B - -91.8 - dBm 11g (54 Mbps) At WCN3680B/WCN3660B - -75.1 - dBm 11n, HT20 (MCS0) At WCN3680B/WCN3660B - -91.8 - dBm 11n, HT20 (MCS7) At WCN3680B/WCN3660B - -73.5 - dBm 11ac, VHT20 (MCS0) At WCN3680B only - -91.8 - dBm 11ac, VHT20 (MCS7) At WCN3680B only - -73.5 - dBm 11ac, VHT20 (MCS8) At WCN3680B only - -66.9 - dBm 3.9.2.2 WLAN 2.4 GHz and 5 GHz Rx desense due to WAN concurrency The device's WAN transmissions can leak into the WLAN receiver and cause desensitization. Table 3-10, Table 3-11, and Table 3-12 characterize the WLAN desense due to WAN transmissions. The following conditions apply: The desensitization is limited to 1 dB in all test cases. The antenna isolation (WAN Tx to WLAN Rx) is assumed to be 10 dB in all cases. Only the WAN Tx channel power is included; other Tx levels such as harmonics and spurious emissions are not included. LM80-P0436-70 Rev. B MAY CONTAIN U.S. AND INTERNATIONAL EXPORT CONTROLLED INFORMATION 39 WCN3680B/WCN3660B Device Specification Table 3-10 Electrical specifications WLAN 2.4 GHz sensitivity degradation with WAN blockers WAN, aggressor GSM WLAN desense Frequency WAN power at WLAN antenna Coex. filter antenna. 1 2437 MHz 13 dBm 43 dB -30 dBm < 1.0 dB CH_ID Frequency WAN output power BC1 9888 1977.6 MHz 23 dBm BC2 9538 1907.6 MHz 23 dBm 13 dBm 41 dB -28 dBm < 1.0 dB BC5 4233 846.6 MHz 23 dBm 13 dBm 40 dB -27 dBm < 1.0 dB BC8 2863 912.6 MHz 23 dBm 13 dBm 39 dB -26 dBm < 1.0 dB GSM 850 251 848.8 MHz 33 dBm 23 dBm 40 dB -17 dBm < 1.0 dB GSM 900 124 914.8 MHz 33 dBm 23 dBm 39 dB -16 dBm < 1.0 dB DCS 1800 885 1784.8 MHz 30 dBm 20 dBm 38 dB -18 dBm < 1.0 dB PCS 1900 810 1909.8 MHz 30 dBm 20 dBm 41 dB -21 dBm < 1.0 dB Band WCDM A WLAN, victim Mode Data rate CH_ID 11g 54 Mbps 6 11g 54 Mbps 6 2437 MHz WAN power at Desense WCN 3660 caused by input blocker 1. Not a requirement, but attenuations are measured on a particular board. LM80-P0436-70 Rev. B MAY CONTAIN U.S. AND INTERNATIONAL EXPORT CONTROLLED INFORMATION 40 WCN3680B/WCN3660B Device Specification Table 3-11 Electrical specifications WLAN 5G sensitivity degradation with WAN blockers: part 1 WAN, aggressor Band WCDMA WCDMA WCDMA WCDMA BC1 BC2 BC5 BC8 WLAN, victim WLAN desense CH_ID Frequency WAN output power Mode Data rate CH_ID Frequency WAN power at WLAN antenna Diplexer attn. 1 WAN power at WCN 3660 input Desense caused by blocker 9888 1977.6 MHz 23 dBm 11a 54 Mbps 44 5220 MHz 13 dBm 59 dB -46 dBm <1.0 dB 60 5300 MHz 13 dBm 59 dB -46 dBm <1.0 dB 120 5600 MHz 13 dBm 59 dB -46 dBm <1.0 dB 157 5785 MHz 13 dBm 59 dB -46 dBm <1.0 dB 44 5220 MHz 13 dBm 58 dB -45 dBm <1.0 dB 60 5300 MHz 13 dBm 58 dB -45 dBm <1.0 dB 120 5600 MHz 13 dBm 58 dB -45 dBm <1.0 dB 157 5785 MHz 13 dBm 58 dB -45 dBm <1.0 dB 44 5220 MHz 13 dBm 40 dB -27 dBm <1.0 dB 60 5300 MHz 13 dBm 40 dB -27 dBm <1.0 dB 120 5600 MHz 13 dBm 40 dB -27 dBm <1.0 dB 157 5785 MHz 13 dBm 40 dB -27 dBm <1.0 dB 44 5220 MHz 13 dBm 40 dB -27 dBm <1.0 dB 60 5300 MHz 13 dBm 40 dB -27 dBm <1.0 dB 120 5600 MHz 13 dBm 40 dB -27 dBm <1.0 dB 157 5785 MHz 13 dBm 40 dB -27 dBm <1.0 dB 9538 4233 2863 1907.6 MHz 846.6 MHz 912.6 MHz 23 dBm 23 dBm 23 dBm 11a 11a 11a 54 Mbps 54 Mbps 54 Mbps 1. Not a requirement, but attenuations are measured on a particular board. LM80-P0436-70 Rev. B MAY CONTAIN U.S. AND INTERNATIONAL EXPORT CONTROLLED INFORMATION 41 WCN3680B/WCN3660B Device Specification Table 3-12 Electrical specifications WLAN 5G sensitivity degradation with WAN blockers - Part 2 WAN, aggressor Band GSM GSM GSM GSM GSM 850 GSM 900 DCS 1800 PCS 1900 WLAN, victim WLAN desense CH_ID Frequency WAN output power Mode Data rate CH_ID Frequency WAN power at WLAN antenna Diplexer attn. 1 WAN power at WCN 3660 input Desense caused by blocker 251 848.8 MHz 33 dBm 11a 54 Mbps 44 5220 MHz 23 dBm 40 dB -17 dBm <1.0 dB 60 5300 MHz 23 dBm 40 dB -17 dBm <1.0 dB 120 5600 MHz 23 dBm 40 dB -17 dBm <1.0 dB 157 5785 MHz 23 dBm 40 dB -17 dBm <1.0 dB 44 5220 MHz 23 dBm 40 dB -17 dBm <1.0 dB 60 5300 MHz 23 dBm 40 dB -17 dBm <1.0 dB 120 5600 MHz 23 dBm 40 dB -17 dBm <1.0 dB 157 5785 MHz 23 dBm 40 dB -17 dBm <1.0 dB 44 5220 MHz 20 dBm 55 dB -35 dBm <1.0 dB 60 5300 MHz 20 dBm 55 dB -35 dBm <1.0 dB 120 5600 MHz 20 dBm 55 dB -35 dBm <1.0 dB 157 5785 MHz 20 dBm 55 dB -35 dBm <1.0 dB 44 5220 MHz 20 dBm 59 dB -39 dBm <1.0 dB 60 5300 MHz 20 dBm 59 dB -39 dBm <1.0 dB 120 5600 MHz 20 dBm 59 dB -39 dBm <1.0 dB 157 5785 MHz 20 dBm 59 dB -39 dBm <1.0 dB 124 885 810 914.8 MHz 1784.8 MHz 1909.8 MHz 33 dBm 30 dBm 30 dBm 11a 11a 11a 54 Mbps 54 Mbps 54 Mbps 1. Not a requirement, but attenuations measured on a particular board. LM80-P0436-70 Rev. B MAY CONTAIN U.S. AND INTERNATIONAL EXPORT CONTROLLED INFORMATION 42 WCN3680B/WCN3660B Device Specification 3.9.3 Electrical specifications WLAN 5 GHz RF Tx The WCN3680B/WCN3660B IC RF transmitter integrates a 5 GHz power amplifier designed to comply with FCC transmit-mask and mandatory EVM levels defined in 802.11n and 802.11ac (WCN3680-only) IEEE standards. The WCN3680B/WCN3660B IC also supports the use of an external 2.4 GHz and 5 GHz PA for applications requiring higher transmit power. 3.9.3.1 Internal PA Table 3-13 WLAN 5 GHz RF Tx performance specifications 1 Parameter Condition RF output frequency range Min Typ Max Units 4.9 - 5.85 GHz 11a (6 Mbps) Mask and EVM-compliant - 17.6 - dBm 11a (54 Mbps) Mask and EVM-compliant - 15.6 - dBm 11n, HT20 (MCS0) Mask and EVM-compliant - 16.6 - dBm 11n, HT20 (MCS7) Mask and EVM-compliant - 14.6 - dBm 11n, HT40 (MCS0) Mask and EVM-compliant - 15.6 - dBm 11n, HT40 (MCS7) Mask and EVM-compliant - 13.6 - dBm 11ac, VHT20 (MCS0) WCN3680B only; mask and EVM-compliant - 16.6 - dBm 11ac, VHT20 (MCS7) WCN3680B only; mask and EVM-compliant - 14.6 - dBm 11ac, VHT20 (MCS8 2) WCN3680B only; mask and EVM-compliant - 13.6 - dBm 11ac, VHT40 (MCS0) WCN3680B only; mask and EVM-compliant - 15.6 - dBm 11ac, VHT40 (MCS7) WCN3680B only; mask and EVM-compliant - 13.6 - dBm 11ac, VHT40 (MCS8 2) WCN3680B only; mask and EVM-compliant - 12.6 - dBm 11ac, VHT80 (MCS0) WCN3680B only; mask and EVM-compliant - 14.6 - dBm 11ac, VHT80 (MCS7) WCN3680B only; mask and EVM-compliant - 12.6 - dBm 11ac, VHT80 (MCS8 2) WCN3680B only; mask and EVM-compliant - 11.6 - dBm Tx output range at antenna At any rate 8 - 20 dBm Self-calibrated power control At room temperature and VSWR 1.5:1 (SCPC) - 2.0 - dB Closed-loop power control At room temperature and VSWR 1.5:1 (CLPC) with external coupler - 1.1 - dB 1. MCS9 is an optional 11ac data rate. If MCS9 is a product requirement, use the external FEM. 2. MCS8 is an optional 11ac data rate. LM80-P0436-70 Rev. B MAY CONTAIN U.S. AND INTERNATIONAL EXPORT CONTROLLED INFORMATION 43 WCN3680B/WCN3660B Device Specification Electrical specifications 3.9.3.2 External PA For applications requiring higher transmit power in the 2.4 GHz and 5 GHz bands, the WCN3680B/WCN3660B device supports the option for an external PA for 2.4 GHz and 5 GHz paths. In this configuration, the WCN digital amplifier output is routed to pad 47 to bypass the internal PA. If using an external PA for 5G, the WL_RFIO_5G pad 72 is set to Rx mode only, and if using an external PA for 2G, the WL_BT_RFIO_2P4G pad 5 is set to WLAN Rx 2.4 GHz and BT Tx/Rx paths. The internal PAs are turned off to allow external front-end modules (FEM) to be used as the primary 2G and 5G amplifiers. By using external FEMs for the 2G and 5G paths, WCN3660B Wi-Fi performance achieves higher output power than the internal PA case. For WCN3680B, using an external FEM achieves compliance with the MCS9 data rates per the IEEE 802.11ac specification. In addition to the modified 2G and 5G RF configuration, the WCN device also enables five RF control pads, depending on which bands have an external FEM enabled. These pads are WL_EXTPA_CTRL0 (pad 52), WL_EXTPA_CTRL1 (pad 34) for 5 GHz FEM control, and WL_EXTPA_CTRL2 (pad 49), WL_EXTPA_CTRL3 (pad 68), and WL_EXTPA_CTRL4 (pad 56) for 2.4 GHz FEM control. All of these pads are sourced from the 5G PA supply voltage. Each of the five pads is intended to be used as a control line for the front-end hardware and to have software-configurable polarity. LM80-P0436-70 Rev. B MAY CONTAIN U.S. AND INTERNATIONAL EXPORT CONTROLLED INFORMATION 44 WCN3680B/WCN3660B Device Specification P#34 Electrical specifications WL_EXTPA_CTRL_1 P#52 WL_EXTPA_CTRL_0 PA_EN SW_CTL 5G FEM 5G Tx WCN3660B/ WCN3680B LNA_EN 5G Tx/Rx 5G Rx P#72 CTL1 P#47 CTL2 SPDT 2G/5G Tx Diplexer WL_BT_RX_2G P#5 LPF 2G Tx SPDT CTL1 P#49 P#56 P#68 Mode LM80-P0436-70 Rev. B 2G Tx/Rx + BT CTL2 C_BT LNA_EN C_RX PA_EN WL_EXTPA_CTRL_2 WL_EXTPA_CTRL_4 WL_EXTPA_CTRL_3 WL_EXTPA_CTRL_0 WL_EXTPA_CTRL_1 WL_EXTPA_CTRL_2 WL_EXTPA_CTRL_3 WL_EXTPA_CTRL_4 Off Low TX2G Low RX2G Low Bluetooth Low TX5G High RX5G Low TX5G+BT High RX5G+BT Low Figure 3-5 2G FEM 2G Rx BT Tx/Rx Low Low Low Low Low High Low High Low Low Low High Low Low High High Low High Low Low Low Low Low Low Low Low High Low Low Low Low Low RF switch control for dual-band external 2nd generation FEMs MAY CONTAIN U.S. AND INTERNATIONAL EXPORT CONTROLLED INFORMATION 45 WCN3680B/WCN3660B Device Specification Electrical specifications P#16 PDETIN WL_EXTPA_CTRL_1 P#34 P#52 WL_EXTPA_CTRL_0 PA_EN SW_CTL 5G Tx WCN3660B/ WCN3680B P#72 5G Rx P#47 2G/5G Tx CTL1 LNA_EN 5G FEM 5G Tx/Rx PDET CTL2 SPDT Diplexer WL_BT_RX_2G P#5 PDET LPF 2G Tx SPDT CTL1 P#49 P#56 P#68 2G FEM 2G Tx/Rx + BT LNA_EN C_RX CTL2 PA_EN WL_EXTPA_CTRL_2 WL_EXTPA_CTRL_4 WL_EXTPA_CTRL_3 Mode WL_EXTPA_CTRL_0 WL_EXTPA_CTRL_1 WL_EXTPA_CTRL_3 WL_EXTPA_CTRL_4 Off TX2G RX2G Bluetooth TX5G RX5G TX5G + BT TXRX RX5G + BT TXRX Low Low Low Low High Low High Low Figure 3-6 LM80-P0436-70 Rev. B 2G Rx BT Tx/Rx Low Low Low Low Low High Low High Low High Low Low Low Low Low Low Low Low High Low Low Low Low Low RF switch control for dual-band external 3rd generation FEMs MAY CONTAIN U.S. AND INTERNATIONAL EXPORT CONTROLLED INFORMATION 46 WCN3680B/WCN3660B Device Specification Figure 3-7 LM80-P0436-70 Rev. B Electrical specifications RF switch control for 2nd generation 5 GHz-only external FEMs MAY CONTAIN U.S. AND INTERNATIONAL EXPORT CONTROLLED INFORMATION 47 WCN3680B/WCN3660B Device Specification Electrical specifications Figure 3-8 RF switch control for 3rd generation external FEMs Table 3-14 5 GHz RF Tx performance - external PA driver Specification Comments Tx EVM Units DA chain EVM channel BW = 20 MHz -21 dBm PDA -10 dBm -36.00 dB DA chain EVM channel BW = 40 MHz -21 dBm PDA -10 dBm -34.50 dB DA chain EVM channel BW = 80 MHz -21 dBm PDA -10 dBm -34.00 dB Table 3-15 LM80-P0436-70 Rev. B 2.4 GHz RF Tx performance - external PA driver Specification Comments Tx EVM Units DA chain EVM channel BW = 20 MHz -19 dBm PDA -5 dBm -36.00 dB DA chain EVM channel BW = 40 MHz -19 dBm PDA -5 dBm -36.00 dB MAY CONTAIN U.S. AND INTERNATIONAL EXPORT CONTROLLED INFORMATION 48 WCN3680B/WCN3660B Device Specification 3.9.4 Electrical specifications WLAN 5 GHz RF Rx The WCN3680B/WCN3660B device WLAN RF receiver is specified for the WLAN 802.11n standard. Table 3-16 5 GHz/20 MHz RF performance - Rx sensitivity Parameter Condition RF input frequency range Min Typ Max Units 4.9 - 5.85 GHz 11a (6 Mbps) At WCN3680B/WCN3660B WL_BT_RFIO_5G port - -90.6 - dBm 11a (54 Mbps) At WCN3680B/WCN3660B WL_BT_RFIO_5G port - -75.6 - dBm 11n, HT20 (MCS0) At WCN3680B/WCN3660B WL_BT_RFIO_5G port - -89.6 - dBm 11n, HT20 (MCS7) At WCN3680B/WCN3660B WL_BT_RFIO_5G port - -74.0 - dBm 11n, HT40 (MCS0) At WCN3680B/WCN3660B WL_BT_RFIO_5G port - -87.6 - dBm 11n, HT40 (MCS7) At WCN3680B/WCN3660B WL_BT_RFIO_5G port - -71.0 - dBm 11ac, VHT20 (MCS0) At WCN3680B WL_BT_RFIO_5G port - -89.6 - dBm 11ac, VHT20 (MCS7) At WCN3680B WL_BT_RFIO_5G port - -74.0 - dBm 11ac, VHT20 (MCS8) At WCN3680B WL_BT_RFIO_5G port - -68.6 - dBm 11ac, VHT40 (MCS0) At WCN3680B WL_BT_RFIO_5G port - -87.6 - dBm 11ac, VHT40 (MCS7) At WCN3680B WL_BT_RFIO_5G port - -71.0 - dBm 11ac, VHT40 (MCS8) At WCN3680B WL_BT_RFIO_5G port - -64.6 - dBm 11ac, VHT40 (MCS9) At WCN3680B WL_BT_RFIO_5G port - -63.6 - dBm 11ac, VHT80 (MCS0) At WCN3680B WL_BT_RFIO_5G port - -85.6 - dBm 11ac, VHT80 (MCS7) At WCN3680B WL_BT_RFIO_5G port - -66.1 - dBm 11ac, VHT80 (MCS8) At WCN3680B WL_BT_RFIO_5G port - -60.6 - dBm 11ac, VHT80 (MCS9) At WCN3680B WL_BT_RFIO_5G port - -59.6 - dBm 3.9.5 WLAN analog interface between host and WCN3680B/WCN3660B The analog interface signals between the WLAN digital baseband of the wireless connectivity subsystem (WCS) in the host and WCN3680 devices are listed in Table 3-17. The I/Q baseband analog interface consists of four transmission lines shared between the Tx and Rx paths. In Tx mode these four lines are used to connect DAC output pads to Tx BBF input pads; the ADC input pads and Rx BBF output pads are in high-Z mode. For Rx mode, conversely, the four lines are used to connect the Rx BBF output pads to ADC input pads as the DAC outputs and Tx BBF inputs are in high-Z mode. LM80-P0436-70 Rev. B MAY CONTAIN U.S. AND INTERNATIONAL EXPORT CONTROLLED INFORMATION 49 WCN3680B/WCN3660B Device Specification Table 3-17 Electrical specifications Analog interface signals Signal name Direction (with respect to RF) Description WL_BB_IN Analog I/O Baseband analog I negative, multiplexed between TX_IN and RX_IN on the RF side. See Table 3-18. WL_BB_IP Analog I/O Baseband analog I positive, multiplexed between TX_IP and RX_IP on the RF side. See Table 3-18. WL_BB_QN Analog I/O Baseband analog Q negative, multiplexed between TX_QN and RX_QN on the RF side. See Table 3-18. WL_BB_QP Analog I/O Baseband analog Q positive, multiplexed between TX_QP and RX_QP on the RF side. See Table 3-18. The electrical specifications of the interface signals can be found in Table 3-18. Table 3-18 Analog I/Q interface specifications Specification Comments Min Typ Max Units Tx mode operation Tx I or Q input impedance for normal operation mode, single-ended DC to 45 MHz - 15 || 1 pF - Tx I or Q input impedance for high-Z mode, single-ended DC to 45 MHz - >1 M || < 2 pF - Maximum interconnect capacitance I or Q, single-ended 1 External parasitic capacitance on I or Q inputs due to board routing, connector, etc. - - 7 pF Amplitude droop in normal operation mode At 45 MHz, due to Tx I or Q input impedance parasitic capacitance - - 0.1 dB Mean I/Q phase imbalance Measured up to 45 MHz -0.2 - 0.2 Degree Mean I/Q amplitude imbalance Measured up to 45 MHz -0.5 - 0.5 % Tx mode, AC current positive or negative inputs (I or Q) - 250 - App Tx mode, common mode voltage on either positive or negative input (I or Q) - 0.3 - V Rx mode operation Single-ended output impedance for normal operation (I or Q) DC to 45 MHz - 80 - Single-ended output impedance for high-Z mode (I or Q) DC to 45 MHz - >1 M || < 2 pF - 0 - 1.6 Vpp - - 0.1 dB Rx I/Q output voltage range Amplitude droop in normal operation mode LM80-P0436-70 Rev. B At 45 MHz, due to Rx I or Q output impedance parasitic capacitance MAY CONTAIN U.S. AND INTERNATIONAL EXPORT CONTROLLED INFORMATION 50 WCN3680B/WCN3660B Device Specification Table 3-18 Electrical specifications Analog I/Q interface specifications (cont.) Specification Comments Min Typ Max Units Measured up to 45 MHz -0.2 - 0.2 Degree Mean I/Q amplitude imbalance Measured up to 45 MHz -0.5 - 0.5 % - 0.55 - V Mean I/Q phase imbalance Common mode voltage on either positive or negative output (I or Q) 300 || 8 pF Rx drive capability Normal mode (driving internal ADC), single-ended Rx drive capability, resistive Test mode (driving external pad) 0 to 45 MHz 10 - - k Rx drive capability, capacitive Test mode (driving external pad) 0 to 40 MHz - - 1 pF Maximum DC offset after calibration Measured at BB IQ interface -60 - 60 mV 1. 50 strip transmission lines must be used for I/Q baseband analog interface signals. 3.9.6 WLAN Tx power detector The WCN3680B/WCN3660B IC includes an integrated detector for monitoring WLAN transmissions near the high end of its dynamic range, thereby ensuring that the maximum level is achieved for each channel and data-rate configuration without exceeding spurious emission and EVM requirements. Three different operation scenarios are supported by the Tx power detector: Measurements based on the internal PA output Measurements based on the external PA output Bypass when using an external power detector: the external detector's output is connected to the WLAN_PDET_IN pad, which is multiplexed with the internal power detector's output to the power detect ADC input Table 3-19 WLAN Tx power-detector performance specifications Parameter Comments Frequency range Min Typ Max Units 2.400 - 5.850 GHz Input RF power detector Using external coupler only, no external power detect circuit. -6 - 4.0 dBm Input DC power detect voltage range Using external coupler and external power detect 0.2 - 1.0 V Output accuracy Within 10 dB of the top segment of the dynamic range -0.15 -0.25 - - 0.15 0.25 dB dB Output PDADC Range of input RF power mapped to 8 bits 3 - 124 ADC counts LM80-P0436-70 Rev. B MAY CONTAIN U.S. AND INTERNATIONAL EXPORT CONTROLLED INFORMATION 51 WCN3680B/WCN3660B Device Specification Table 3-19 Electrical specifications WLAN Tx power-detector performance specifications (cont.) Parameter Min Typ Max Units 10 - - ADC counts Output response time 1 - 4 - s DC/RF turn-on time - - 2 s ADC common mode voltage - 0.6 - Bits Output resolution Comments For every change in 1 dB in 10 dB of the top segment 1. The signal subject to measurement is deterministic (always the same 4 s segment within the WLAN preamble), so the expected response after 4 s can be calibrated. Additional comments pertaining to the WLAN Tx power detector: The output response is calibrated, so it does not need to be linear in dB or voltage. The DC offset error is compensated by software. The turn-on and turn-off times are programmable. 3.10 Bluetooth radio 3.10.1 Bluetooth RF Tx Bluetooth RF transmitter specifications are listed according to three operating modes: the basic rate (Table 3-20), the enhanced data rate (Table 3-21), and low-energy mode (Table 3-22). All typical performance specifications, unless noted otherwise, are based on operation at room temperature (+25C) using default parameter settings and nominal supply voltages. Table 3-20 Bluetooth Tx performance specifications: basic rate, class11, 2, 3 Parameter Comments RF frequency range 44 Min Typ Max Units 2402 - 2480 MHz 10.5 133 15.5 dBm RF output power (GFSK) Maximum power setting Transmit power-control range 55 Over multiple steps 30 - - dB Transmit power-control step size 5 Power change, each control step 2 - 8 dB 20 dB bandwidth GFSK only - - 1 MHz Adjacent channel power 2 channels 3 or more channels At 1 MHz BW - - - - -20 -40 dBm dBm 140 99.9 - - 175 - kHz % -75 - +75 kHz Frequency deviations: Normal (f1avg) Packets exceeding 115 kHz (f2max) Frequency tolerance 66 LM80-P0436-70 Rev. B MAY CONTAIN U.S. AND INTERNATIONAL EXPORT CONTROLLED INFORMATION 52 WCN3680B/WCN3660B Device Specification Table 3-20 Electrical specifications Bluetooth Tx performance specifications: basic rate, class11, 2, 3 Parameter Comments Carrier frequency drift Maximum drift rate within 50 s Maximum length 1-slot packet Maximum length 3-slot packet Maximum length 5-slot packet Tx noise power in smaller device bands 5 Measured without bandpass filter CDMA, GSM 869 to 960 MHz GPS 1570 to 1580 MHz GSM 1805 to 1910 MHz CDMA, WCDMA, and GSM 1930 to 1990 MHz CDMA, WCDMA 2010 to 2170 MHz Min Typ Max Units -20 -25 -40 -40 - - - - +20 +25 +40 +40 kHz kHz kHz kHz - - - - - -124 -143 -135 -135 -130 - - - - - dBm/Hz dBm/Hz dBm/Hz dBm/Hz dBm/Hz 1. User measurement results are affected by measurement uncertainty, as specified in the Bluetooth TSS, Section 6.10. 2. WCN3660B and WCN3680B also support antenna features since antenna shares the same radio as BT BR. Compliance to Bluetooth basic rate specifications ensure antenna compliance as well. 3. For antenna applications, RF output power is 4 dBm typical. 4. Center frequency f = 2402 + k, where k is the channel number (all values in MHz). 5. This specification is required at room temperature (+25C) and nominal supply voltages only. 6. Initial carrier frequency deviation from Tx center frequency before any packet information is transmitted. Table 3-21 Bluetooth Tx performance specifications: enhanced data rate 1 Parameter Min Typ Max Units 2402 - 2480 MHz - - 11 11 - - dBm dBm 2 - 8 dB DEVM for /4-DQPSK > 99% of measured blocks RMS for any measured block Peak - - - - - - 30 20 35 % % % DEVM for 8DPSK > 99% of measured blocks RMS for any measured block Peak - - - - - - 20 13 25 % % % In-band spurious emissions 1 MHz offset from center 2 MHz offset from center 3 MHz offset from center - - - - - - -26 -20 -40 dBc dBm dBm RF frequency range Comments 2 RF output power 3 /4-DQPSK 8DPSK EDR power-control step size 3 LM80-P0436-70 Rev. B Power change, each control step MAY CONTAIN U.S. AND INTERNATIONAL EXPORT CONTROLLED INFORMATION 53 WCN3680B/WCN3660B Device Specification Table 3-21 Electrical specifications Bluetooth Tx performance specifications: enhanced data rate 1 (cont.) Parameter Frequency errors Packet error (i) Block error (o) Total error (i + o) Comments Initial error, all packets Error for RMS DEVM, all blocks Total, all blocks Tx noise power in smaller device bands 4 Measured without bandpass filter CDMA, GSM 869 to 960 MHz GPS 1570 to 1580 MHz GSM, DCS 1805 to 1910 MHz GSM, PCS, CDMA, WCDMA 1930 to 1990 MHz WCDMA 2010 to 2170 MHz Min Typ Max Units -75 -10 -75 - - - +75 +10 +75 kHz kHz kHz - - - - - -124 -143 -135 -135 -130 - - - - - dBm/Hz dBm/Hz dBm/Hz dBm/Hz dBm/Hz 1. User measurement results are affected by measurement uncertainty, as specified in the Bluetooth TSS, Section 6.10. 2. Center frequency f = 2402 + k, where k is the channel number (all values in MHz). 3. EDR power measured in the GFSK header. 4. This specification is required at room temperature (+25C) and nominal supply voltages only. Table 3-22 Bluetooth Tx performance specifications: low-energy mode Parameter Comments RF frequency range 1 Average output power (PAVG) 2 Maximum output power setting In-band emissions fTX 1 MHz fTX 2 MHz fTX (3 + n) MHz Modulation characteristics f1avg f2max 185 kHz |f0 - fn|, n = 2, 3, 4...k |f1 - f0| |fn - fn-5|, n = 6, 7, 8...k Typ Max Units 2402 - 2480 MHz - 4 - dBm - - - - - - -26 -20 -30 dBc dBm dBm 225 99.9 0.8 - - - 275 - - kHz % - -150 - - - - - - - +150 50 20 20 kHz kHz kHz kHz Recorded over 10 test packets f1avg/f1avg Carrier frequency offset and drift fn - fTX, n = 0, 1, 2, 3...k Min fTX is the nominal Tx frequency 1. Center frequency f = 2402 + k, where k is the channel number (all values in MHz). 2. Adjustable to any equivalent BR power level. LM80-P0436-70 Rev. B MAY CONTAIN U.S. AND INTERNATIONAL EXPORT CONTROLLED INFORMATION 54 WCN3680B/WCN3660B Device Specification 3.10.2 Electrical specifications Bluetooth RF Rx Bluetooth RF receiver specifications are listed according to three operating modes: the basic rate (Table 3-23), the enhanced data rate (Table 3-24), and low-energy mode (Table 3-25). All typical performance specifications, unless noted otherwise, are based on operation at room temperature (+25C) using default parameter settings and nominal supply voltages. Table 3-23 Bluetooth Rx performance specifications: basic rate 1 Parameter Comments RF frequency range 2 Min Typ Max Units 2402 - 2480 MHz Sensitivity BER 0.1% - -95 -91 dBm Maximum usable input 3 BER 0.1% 0 - - dBm Carrier-to-interference ratios (C/I) 3 Co-channel Adjacent channel (1 MHz) Second adjacent channel (2 MHz) Third adjacent channel (3 MHz) BER 0.1% - - 11 dB - - - - - - 0 -30 -40 dB dB dB -39 - - dBm Intermodulation 3, 4, 5 LM80-P0436-70 Rev. B MAY CONTAIN U.S. AND INTERNATIONAL EXPORT CONTROLLED INFORMATION 55 WCN3680B/WCN3660B Device Specification Table 3-23 Bluetooth Rx performance specifications: basic rate 1 (cont.) Parameter Out-of-band blocking 3, 6 BT 30 to 2000 MHz Electrical specifications 2000 to 2400 MHz 2500 to 3000 MHz 3000 to 12750 MHz Cellular blocking CDMA2000TM 410 to 420 MHz 450 to 460 MHz 479 to 484 MHz 777 to 792 MHz 806 to 849 MHz 872 to 925 MHz 1710 to 1785 MHz 1850 to 1910 MHz 1920 to 1980 MHz GSM 450 to 460 MHz 479 to 484 MHz 777 to 792 MHz 824 to 849 MHz 876 to 915 MHz 1710 to 1785 MHz 1850 to 1910 MHz WCDMA 1710 to 1785 MHz 1850 to 1910 MHz 1920 to 1980 MHz Comments Min Typ Max Units -10 -27 -27 -10 - - - - - - - - dBm dBm dBm dBm -7 -7 -7 -7 -7 -7 -7 -7 -7 -7 -7 - - - - - - - - - - - - - - - - - - - - - - dBm dBm dBm dBm dBm dBm dBm dBm dBm dBm dBm -1 -1 -1 -1 -1 -1 -1 - - - - - - - - - - - - - - dBm dBm dBm dBm dBm dBm dBm -2 - - dBm -2 -2 - - - - dBm dBm Measured without bandpass filter 1. User measurement results are affected by measurement uncertainty, as specified in the Bluetooth TSS, Section 6.10. 2. Center frequency f = 2402 + k, where k is the channel number (all values in MHz). 3. This specification is required at room temperature (+25C) and normal supply voltages only. 4. Maximum interferer level to maintain 0.1% BER; interference signals at 3 MHz and 6 MHz offsets. 5. Intermodulation performance specification is valid with minimum BPF insertion loss of 1.5 dB. 6. Continuous power in smaller device bands, -67 dBm desired signal input level. The stated typical values in smaller device bands are average values measured in accordance with Bluetooth TSS, with less than 24 exceptions. LM80-P0436-70 Rev. B MAY CONTAIN U.S. AND INTERNATIONAL EXPORT CONTROLLED INFORMATION 56 WCN3680B/WCN3660B Device Specification Table 3-24 Electrical specifications Bluetooth Rx performance specifications: enhanced data rate 1 Parameter Comments RF frequency range 2 Sensitivity /4-DQPSK 8DPSK BER 0.01% Maximum usable input 3 /4-DQPSK 8DPSK BER 0.1% Selectivity, BER 0.1% Carrier-to-interference ratios (C/I) 3 Co-channel /4-DQPSK 8DPSK Adjacent channel (1 MHz) /4-DQPSK 8DPSK Second adjacent channel (2 MHz) /4-DQPSK 8DPSK Third adjacent channel (3 MHz) /4-DQPSK 8DPSK Min Typ Max Units 2402 - 2480 MHz - - -95 -86 -91 -84 dBm dBm -15 -15 - - - - dBm dBm - - - - 13 21 dB dB - - - - 0 5 dB dB - - - - -30 -25 dB dB - - - - -40 -33 dB dB 1. User measurement results are affected by measurement uncertainty, as specified in the Bluetooth TSS, Section 6.10. 2. Center frequency f = 2402 + k, where k is the channel number (all values in MHz). 3. This specification is required at room temperature (+25C) and normal supply voltages only. Table 3-25 Bluetooth Rx performance specifications: low-energy mode Parameter Min Typ Max Units 2402 - 2480 MHz Sensitivity - -98 - dBm Carrier-to-interference ratios (C/I) Co-channel Adjacent channel (1 MHz) Second adjacent channel (2 MHz) Third adjacent channel (3 MHz) - - - - - - - - 20 15 -17 -27 dB dB dB dB Out-of-band blocking 30 to 2000 MHz 2003 to 2399 MHz 2484 to 2997 MHz 3000 MHz to 12.75 GHz -10 -27 -27 -10 - - - - - - - - dBm dBm dBm dBm Intermodulation -50 - - dBm Maximum input signal level 0 - - dBm PER report integrity 50 - - % RF frequency range1 Comments 1. Center frequency f = 2402 + k, where k is the channel number (all values in MHz). LM80-P0436-70 Rev. B MAY CONTAIN U.S. AND INTERNATIONAL EXPORT CONTROLLED INFORMATION 57 WCN3680B/WCN3660B Device Specification Electrical specifications 3.11 FM performance specifications The WCN3680B/WCN3660B FM performance specifications are defined in this section. 3.11.1 FM analog and RF performance specifications The following sections provide performance specifications for the FM RF receiver and analog audio over the full operating power supply voltage range and temperature range shown in Table 3-2. 3.11.1.1 FM radio receiver Table 3-26 FM radio (with RDS) Rx performance specifications1 Parameter Comments Min Typ Max Unit Input frequency range 76 - 108 MHz Channel frequency step - 50 100 200 - kHz - 150/10 - /pF - -3 - dBV - 15 - dBV 35 60 50 63 - - dB dB 35 - - dB -18 - - dBm RF-specific RF input impedance FM_HS_RX At 92.5 MHz input frequency Sensitivity Modulated with 1 kHz audio tone 22.5 kHz frequency deviation with 75 s de-emphasis on Tester audio bandwidth: 300 Hz-15 kHz (A-weighted) 26 dB signal-to-noise ratio RDS sensitivity 2 kHz RDS frequency deviation 95% of blocks decoded with no error Over 5000 blocks Receiver small signal selectivity 200 kHz interference 400 kHz interference 3.5 V EMF wanted RF input signal level Modulated with 1 kHz audio tone 22.5 kHz frequency deviation Tester audio bandwidth: 300 Hz-15 kHz (A-weighted) 26 dB signal-to-noise ratio In-band spurious rejection 1 mV wanted RF signal input level Modulated with 1 kHz audio tone 22.5 kHz frequency deviation Tester audio bandwidth: 300 Hz-15 kHz (A-weighted) 26 dB signal-to-noise ratio Input third-order intercept point (IP3) LM80-P0436-70 Rev. B MAY CONTAIN U.S. AND INTERNATIONAL EXPORT CONTROLLED INFORMATION 58 WCN3680B/WCN3660B Device Specification Table 3-26 Electrical specifications FM radio (with RDS) Rx performance specifications1 (cont.) Parameter Comments Min Typ Max Unit Maximum RF input level Maximum on-channel input level 76-108 MHz. f = 75 kHz, L = R, fmod = 1 kHz, pre/de-emphasis = 75 s Note: THD 0.6% is for mono and 1% for stereo at the maximum RF input at room temperature. 118 - - dBV Seek/tune time To within 5 kHz of final frequency - - 9 ms - - 50 75 - - s s Audio-specific De-emphasis time constant Audio (S + N)/N Mono Modulated with 1 kHz audio tone 1 mV RF input signal level 22.5 kHz frequency deviation with 75 s de-emphasis on Tester audio bandwidth: 300 Hz-15 kHz (A-weighted) Audio (S + N)/N Stereo Modulated with 1 kHz audio tone 1 mV RF input signal level, 75 kHz frequency deviation with 75 s de-emphasis on. Tester audio bandwidth: 300 Hz-15 kHz (A-weighted) Audio THD Modulated with 1 kHz audio tone 1 mV RF input signal level with 75 s de-emphasis on Tester audio bandwidth: 300 Hz-15 kHz (A-weighted) Mono, 1 kHz, 75 kHz dev Mono, 1 kHz, 100 kHz dev Stereo, 3 kHz, 75 kHz dev dB 57 65 - 53 58 - dB - - - 0.4 0.5 0.9 0.8 1 1.5 % % % Audio frequency response low Mono -3 dB point 0 dB at 1 kHz 1 mV RF input signal level 22.5 kHz frequency deviation with 75 s pre-emphasis on - - 20 Hz Audio frequency response high Mono -3 dB point 0 dB at 1 kHz 1 mV RF input signal level 22.5 kHz frequency deviation with 75 s pre-emphasis on 15 - - kHz Audio output mute attenuation Left Right Left and right Modulated with 1 kHz audio tone 1 mV RF input signal level 22.5 kHz frequency deviation with 75 s de-emphasis on Tester audio bandwidth: 300 Hz-15 kHz (A-weighted) 80 80 80 - - - - - - dB dB dB Soft mute start level 3 dB mute attenuation 3 8 10 V EMF LM80-P0436-70 Rev. B MAY CONTAIN U.S. AND INTERNATIONAL EXPORT CONTROLLED INFORMATION 59 WCN3680B/WCN3660B Device Specification Table 3-26 Electrical specifications FM radio (with RDS) Rx performance specifications1 (cont.) Parameter Comments Min Typ Max Unit Soft mute attenuation at 1.4 V EMF RF input signal level Modulated with 1 kHz audio tone 22.5 kHz frequency deviation with 75 s de-emphasis on Tester audio bandwidth: 300 Hz-15 kHz (A-weighted) 10 39 30 dB AM suppression Modulated with 1 kHz audio tone >20 V EMF RF input signal level 22.5 kHz frequency deviation with 75 s de-emphasis on Tester audio bandwidth: 300 Hz-15 kHz (A-weighted) 30% AM modulation index 40 57 - dB Stereo channel separation SNC on Modulated with 1 kHz audio tone 75 kHz frequency deviation 40 V RF input signal level 4 10 16 dB Stereo channel separation SNC off Modulated with 1 kHz audio tone 75 kHz frequency deviation 30 V RF input signal level 30 40 - Mono/stereo blend start voltage 1 dB stereo channel separation; SNC on - 28 - V EMF Mono/stereo switching hysteresis SNC off; 1 kHz mod; 75 kHz dev; 9% pilot; R = 0, L = 1 - 3 - dB dB 1. All RF input voltages are potentially different across input, unless EMF is explicitly stated. Table 3-27 FM receiver selectivity 1, 2, 3, 4, 5, 6 Category Modulation type Test frequencies (MHz) FM channel WAN blocker Typical blocker input power (dBm) NA 700L CDMA 99.9 698.5 -52 NA 700L CDMA 102.5 716.7 -52 NA 700L WCDMA 99.9 698.5 -47 NA 700L WCDMA 102.5 716.7 -47 NA 700H CDMA 87.5 786.7 -52 NA 700H CDMA 88.3 793.9 -52 NA 700H WCDMA 87.5 786.7 -47 NA 700H WCDMA 88.3 793.9 -47 US cellular GSM 91.7 824.5 -45 US cellular GSM 94.5 849.7 -45 US cellular CDMA 91.7 824.5 -42 US cellular CDMA 94.5 849.7 -42 US cellular WCDMA 91.7 824.5 -37 US cellular WCDMA 94.5 849.7 -37 GSM 900 GSM 97.9 880.3 -45 LM80-P0436-70 Rev. B MAY CONTAIN U.S. AND INTERNATIONAL EXPORT CONTROLLED INFORMATION 60 WCN3680B/WCN3660B Device Specification Table 3-27 Electrical specifications FM receiver selectivity 1, 2, 3, 4, 5, 6 (cont.) Category Modulation type Test frequencies (MHz) FM channel WAN blocker Typical blocker input power (dBm) GSM 900 GSM 101.7 914.5 -45 CDMA 900 CDMA 97.9 880.3 -42 CDMA 900 CDMA 101.7 914.5 -42 WCDMA 900 WCDMA 97.9 880.3 -37 WCDMA 900 WCDMA 101.7 914.5 -37 UMTS 1500 WCDMA 84.1 1428.1 -37 UMTS 1500 WCDMA 85.5 1451.9 -37 GSM 1800 GSM 100.7 1710.3 -45 GSM 1800 GSM 105.1 1785.1 -45 PCS GSM 97.5 1850.5 -45 PCS GSM 100.7 1911.3 -45 PCS CDMA 97.5 1850.5 -42 PCS CDMA 100.7 1911.3 -42 PCS WCDMA 97.5 1850.5 -37 PCS WCDMA 100.7 1911.3 -37 IMT CDMA 101.3 1922.7 -42 IMT CDMA 104.3 1979.7 -42 IMT WCDMA 101.3 1922.7 -37 IMT WCDMA 104.3 1979.7 -37 BT/WLAN BT 104.5 2401.1 -43 BT/WLAN BT 107.9 2479.3 -43 UMTS 2600 WCDMA 100.1 2500.1 -41 UMTS 2600 WCDMA 102.9 2570.1 -41 1. All levels are at the chip input. 2. Wanted signal at 5 dBV (-102 dBm 50 or +10.8 dBV EMF) input; fmod = 1 kHz, f = 22.5 kHz SINAD = 26 dB, BAF = 300 Hz to 15 kHz (A-weighted) de-emphasis = 50 s. 3. CDMA blocker is modulated reverse link. 1.2288 Mb/s chip rate. 4. WCDMA blocker is modulated reverse link. 3.84 Mb/s chip rate. 5. GSM blocker is modulated; MSK modulation; Gaussian filter BT = 0.3; fs = 270.8333 ks/s; and bursting 1/8 timeslots. 6. BT blocker is modulated with mod index = 0.315; bursting with DH1 packets. LM80-P0436-70 Rev. B MAY CONTAIN U.S. AND INTERNATIONAL EXPORT CONTROLLED INFORMATION 61 WCN3680B/WCN3660B Device Specification 3.11.2 Electrical specifications FM RDS interrupt At reset, the RDS interrupt signal is disabled. After reset, the host can enable the interrupt and set the NVM parameters associated with the interface. The software supports the following NVM parameters for configuring the interrupt behavior: Inactive mode: tri-state or output Internal pull (if inactive mode is set to tri-state): up, down, or no-pull The FM RDS interrupt uses a digital I/O pad that receives power from the VDD_IO_1P8 supply. Its I/O performance specifications meet the requirements stated in Section 3.5. LM80-P0436-70 Rev. B MAY CONTAIN U.S. AND INTERNATIONAL EXPORT CONTROLLED INFORMATION 62 4 Mechanical information Mechanical information for the WCN3680B/WCN3660B IC is presented in this chapter, including physical dimensions, visible markings, ordering information, moisture sensitivity level, and thermal characteristics. 4.1 Device physical dimensions The WCN3680B/WCN3660B IC is available in the 79B WLNSP that includes extra ground pads for improved grounding, mechanical strength, and thermal continuity. The 79B WLNSP package has a 3.805 x 3.82 mm body with a maximum height of 0.63 mm. Pad 1 is located by an indicator mark on the top of the package. The 79B WLNSP outline drawing is shown in Figure 4-1. LM80-P0436-70 Rev. B MAY CONTAIN U.S. AND INTERNATIONAL EXPORT CONTROLLED INFORMATION 63 WCN3680B/WCN3660B Device Specification Mechanical information PAGE 52 Figure 4-1 LM80-P0436-70 Rev. B 79B WLNSP outline drawing MAY CONTAIN U.S. AND INTERNATIONAL EXPORT CONTROLLED INFORMATION 64 WCN3680B/WCN3660B Device Specification Figure 4-2 LM80-P0436-70 Rev. B Mechanical information WCN3680B/WCN3660B pad locations MAY CONTAIN U.S. AND INTERNATIONAL EXPORT CONTROLLED INFORMATION 65 WCN3680B/WCN3660B Device Specification Mechanical information 4.2 Device marking Section 4.2.1 provides the device marking information for WCN3680B; Section 4.2.2 provides the device marking information for WCN3660B. 4.2.1 WCN3680B Line 1 WCN3680B Line 2 Line 3 PBB XXXXXXXXX Line 4 Line 5 FAYWWRR ## 3DG 1 identifier Figure 4-3 Table 4-1 WCN3680B part marking (top view - not to scale) WCN3680B part marking line descriptions Line Marking 1 WCN3680B 2 PBB 3 XXXXXXXXX 4 FAYWWRR Description Qualcomm product name P = configuration code BB = feature code XXXXXXXXX = wafer lot number F = Source of supply code for wafer fab locations When F = A: Fabrication = TSMC A = Source of supply code for assembly location When A = A: Assembly = TSMC, BP2B, Taiwan When A = B: Assembly = Amkor, ATT3, Taiwan Y = Single-digit year WW = Two-digit work week of current year (based on calendar year) RR = Product revision RR = 05, Engineering sample 1 (ES) and final commercial sample (CS) 5 LM80-P0436-70 Rev. B ## ## = two-digit wafer number MAY CONTAIN U.S. AND INTERNATIONAL EXPORT CONTROLLED INFORMATION 66 WCN3680B/WCN3660B Device Specification 4.2.2 Mechanical information WCN3660B Line 1 WCN3660B Line 2 Line 3 PBB XXXXXXXXX Line 4 Line 5 FAYWWRR ## 3DG 1 identifier Figure 4-4 Table 4-2 WCN3660B part marking (top view - not to scale) WCN3660B part marking line descriptions Line Marking 1 WCN3660B 2 PBB 3 XXXXXXXXX 4 FAYWWRR Description Qualcomm product name P = configuration code BB = feature code XXXXXXXXX = wafer lot number F = Source of supply code for wafer fab locations When F = A: Fabrication = TSMC A = Source of supply code for assembly location When A = A: Assembly = TSMC, BP2B, Taiwan When A = B: Assembly = Amkor, ATT3, Taiwan Y = Single-digit year WW = Two-digit work week of current year (based on calendar year) RR = product revision 5 LM80-P0436-70 Rev. B ## RR = 05, Engineering sample 1 (ES) and final commercial sample (CS) ## = two-digit wafer number MAY CONTAIN U.S. AND INTERNATIONAL EXPORT CONTROLLED INFORMATION 67 WCN3680B/WCN3660B Device Specification Mechanical information 4.3 Device ordering information This device can be ordered using the identification code shown in Figure 4-5. RR: Product revision (ex. "00" = engineering sample) CCCCC: Package type (ex. WLNSP) P: Configuration code (ex. 0) AAA-AAAAN: Product name (ex: WCN-3680) AAA-AAAA P BBB CCCCC DD RR S DD: Packing information (ex. "TR"= tape and reel; "SR" = short reel) BBB: Number of pins (ex. 79) S: Source code (ex. 0) Figure 4-5 Device identification code An example can be as follows: WCN-3680-0-79WLNSP-TR-00-0. 4.4 Device moisture-sensitivity level During device qualification, Qualcomm follows the latest revision IPC/JEDEC J-STD-020 standard to determine the IC's moisture-sensitivity level (MSL). See Chapter 7 for more information. To ensure proper SMT assembly, procedures must follow the MSL and maximum reflow temperature specified on the shipping bag labels or bar code labels accompanying all WCN3680B/WCN3660B IC shipments. Additional MSL information is included in: Section 5.2 - Storage Section 5.3 - Handling Section 7.1 - Reliability qualifications summary LM80-P0436-70 Rev. B MAY CONTAIN U.S. AND INTERNATIONAL EXPORT CONTROLLED INFORMATION 68 WCN3680B/WCN3660B Device Specification Mechanical information 4.5 Thermal characteristics The WCN3680B/WCN3660B device in its 79B WLNSP package has typical thermal resistances as listed in Table 4-3. Table 4-3 Device thermal resistance Parameter JA Thermal resistance, J-to-A Comments Junction-to-ambient (still air) 1 Typ Unit 49.0 C/W 1. Junction-to-ambient thermal resistance (JA) is calculated based on the total package power dissipation (200 mW); ambient temperature is 85C. LM80-P0436-70 Rev. B MAY CONTAIN U.S. AND INTERNATIONAL EXPORT CONTROLLED INFORMATION 69 5 Carrier, storage, and handling information Information about shipping, storing, and handling the WCN3680B/WCN3660B IC is presented in this chapter. 5.1 Shipping 5.1.1 Tape and reel information The single-feed tape carrier for the WCN3680B/WCN3660B device is illustrated in Figure 5-1; this figure also shows the proper part orientation. The tape width is 12 mm, and the parts are placed on the tape with a 8 mm pitch. The reels are 330 mm (13 inch) in diameter, with 178 mm (7 inch) hubs. Each reel can contain up to 5000 devices. Taping direction Pin #1 faces feed holes Tape width Pin #1 WCN3680B WCN3680B WCN3680B Pocket pitch Figure 5-1 LM80-P0436-70 Rev. B Carrier tape drawing with part orientation MAY CONTAIN U.S. AND INTERNATIONAL EXPORT CONTROLLED INFORMATION 70 WCN3680B/WCN3660B Device Specification Carrier, storage, and handling information The carrier tape and reel features are based on the EIA-481 standard. Individual pocket designs can vary from vendor to vendor, but it is designed to hold the part for shipping and loading onto SMT manufacturing equipment while protecting the body and pads from damaging stresses. The WLNSPs are packaged in tape and reel with their solder pads facing down. Tape-handling recommendations are shown in Figure 5-2. Handle only at the edges Figure 5-2 5.1.2 Tape handling Packing for shipment (including bar code label) Refer to the IC Packing Methods and Materials Specification (80-VK055-1) for all packing-related information, including bar code label details. 5.2 Storage 5.2.1 Storage conditions WCN3680B/WCN3660B devices delivered in tape and reel carriers must be stored in sealed, moisture barrier, anti-static bags. 5.2.2 Out-of-bag duration WCN3680B/WCN3660B devices can be kept outside the moisture barrier bag on the factory floor indefinitely without detrimental moisture absorption. LM80-P0436-70 Rev. B MAY CONTAIN U.S. AND INTERNATIONAL EXPORT CONTROLLED INFORMATION 71 WCN3680B/WCN3660B Device Specification Carrier, storage, and handling information 5.3 Handling Unlike traditional IC devices, the silicon in the WCN devices is not protected by an over-mold and there is no substrate; hence, these devices are fragile. Tape handling is described in Section 5.1.1. Other handling guidelines are presented below. NOTE To eliminate damage to the silicon die due to improper handling, the following recommendations must be followed: * Do not use tweezers, as they can cause damage to the silicon die. Use a vacuum tip to handle the device. * Carefully select a pickup tool to avoid any damage during the SMT process. * Do not make contact with the device when reworking or tuning components that are in close proximity to the device. 5.3.1 Baking Wafer level packages, including this device, must not be baked. 5.3.2 Electrostatic discharge Electrostatic discharge (ESD) occurs naturally in laboratory and factory environments. An established high-voltage potential is always at risk of discharging to a lower potential. If this discharge path is through a semiconductor device, it will result in destructive damage. ESD countermeasures and handling methods must be developed and used to control the factory environment at each manufacturing site. These products must be handled according to the ESD Association standard: ANSI/ESD S20.20-1999, Protection of Electrical and Electronic Parts, Assemblies, and Equipment. Refer to Section 7.1 for the WCN3680B/WCN3660B device ESD ratings. LM80-P0436-70 Rev. B MAY CONTAIN U.S. AND INTERNATIONAL EXPORT CONTROLLED INFORMATION 72 6 PCB mounting guidelines Guidelines for mounting the WCN3680B/WCN3660B device onto a PCB are presented in this chapter, including land pad and stencil design details, surface mount technology (SMT) process characterization, and SMT process verification. NOTE Mounting suggestions presented in this chapter are provided for convenience only. The WCN3680B device is Pb-free internally and externally; it is also BrCl-free, RoHS-compliant, and e1(SAC). Its solder pads use the SAC405 composition. NOTE The lead-free (or Pb-free) semiconductor products are defined as having a maximum lead concentration of 1000 ppm (0.1% by weight) in raw (homogeneous) materials and end products. 6.1 Land pad and stencil design The land pattern recommendations are based on the internal characterizations using Pb-free solder pastes on an eight-layer test PCB and a 100-micron thick stencil. The PCB land pattern for the 79B WLNSP package is the same whether SnPb or Pb-free solder is used. 6.2 SMT development and characterization The information presented in this section describes the board-level characterization process parameters. It is included to assist customers when starting their SMT process development; it is not intended to be a specification for customer SMT processes. NOTE It is recommended for the customers to follow their solder paste vendor recommendations for the screen-printing process parameters and reflow profile conditions. The characterization tests optimize the SMT process for the best board-level reliability. This is done by performing physical tests on evaluation boards, which include: Bend cycle Drop shock Temperature cycling LM80-P0436-70 Rev. B MAY CONTAIN U.S. AND INTERNATIONAL EXPORT CONTROLLED INFORMATION 73 WCN3680B/WCN3660B Device Specification PCB mounting guidelines Characterizing the land patterns according to each customer's processes, materials, equipment, stencil design, and reflow profile prior to PCB production is recommended. Review the land pattern and stencil pattern design recommendations in Section 6.1 as a guide for characterization. Any particular underfill products are not endorsed. Optimizing the solder-stencil pattern design and print process is critical to ensure print uniformity, decrease voiding, and increase board-level reliability. Reflow profile conditions used for SnPb and lead-free systems are given in Table 6-1. Table 6-1 SMT reflow profile conditions (for reference only) Profile stage Preheat Soak Reflow Description Initial ramp 3C/sec max Dry out and flux activation 150 to 190C 60 to 120 sec Time above solder-paste melting point 40 to 75 sec Peak temperature Cool down Lead-free (high-temperature) condition limits Cool rate - ramp to ambient 250C 6C/sec max 6.3 SMT peak package-body temperature The following limits during the SMT board-level solder attach process are recommended: SMT peak package-body temperature of 250 C, the temperature that must not be exceeded as measured on the package-body's top surface. Maximum duration of 30 sec. at this temperature. Although the solder-paste manufacturer's recommendations for optimum temperature and duration for solder reflow must be followed, the recommended limits must not be exceeded. 6.4 SMT process verification The verification of the SMT process prior to high-volume PCB fabrication is recommended, including: Electrical continuity X-ray inspection of the package installation for proper alignment, solder voids, solder pads, and solder bridging Visual inspection Cross-section inspection of solder joints to confirm registration, fillet shape, and print volume (insufficient, acceptable, or excessive) LM80-P0436-70 Rev. B MAY CONTAIN U.S. AND INTERNATIONAL EXPORT CONTROLLED INFORMATION 74 7 Part reliability 7.1 Reliability qualification summary Table 7-1 WCN3680B/WCN3660B reliability qualification report for a device from TSMC and WLNSP package from TSMC and Amkor Sample number of lots Results (TSMC) Results (Amkor) Average failure rate (AFR) in FIT () failures per billion device hours Functional HTOL: JESD22-A108 535 3 lots = 15 FIT N/A Mean time to failure (MTTF) t = 1/ (million hours) 535 3 lots 67 N/A 3 Pass 2000 V, all pads N/A ESD - charged device model (CDM) rating JESD22-C101-D 3 Pass 500 V, all pads N/A Latch-up (overcurrent test): EIA/JESD78 Trigger current: 100 mA; temperature: 85C 6 Pass N/A Latch-up (Vsupply overvoltage): EIA/JESD78 Trigger voltage: 1.5 x V; temperature: 85C 6 Pass N/A Moisture resistance test (MRT): MSL 1; J-STD-020 3 X reflow cycles at 255 +/-5 C 462 3 lots Pass Pass Temperature cycle: JESD22-A104 Temperature: -55C to +125C; number of cycles: 1000 Minimum soak time at min/max temperature: five minutes Cycle rate: two cycles per hour (CPH) Preconditioning: JESD22-A113 MSL: 1 reflow temperature: 255C+5/-0C 231 3 lots Pass Pass Unbiased highly accelerated stress test (UHAST) JESD22-A118 Preconditioning: JESD22-A113 MSL: 1 reflow temperature: 255 +5/-0C 231 3 lots Pass Pass High temperature storage life: JESD22-A103 Temperature 150C, 1000 hours 78 3 lots Pass Pass Tests, standards, and conditions ESD - human body model (HBM) rating JESD22-A114-B LM80-P0436-70 Rev. B MAY CONTAIN U.S. AND INTERNATIONAL EXPORT CONTROLLED INFORMATION 75 WCN3680B/WCN3660B Device Specification Part reliability Table 7-1 WCN3680B/WCN3660B reliability qualification report for a device from TSMC and WLNSP package from TSMC and Amkor (cont.) Sample number of lots Results (TSMC) Results (Amkor) 15 Pass Pass 40 pads (four pads per sample x 10 samples) Pass (all pads sheared in ductile mode) Pass (all pads sheared in ductile mode) Tests, standards, and conditions Physical dimensions: JESD22-B100-A Package outline drawing: NT90-N2742-1 Solder pad shear: JESD22-B117 After 10x reflow cycles 260C -5/+0C 7.2 Qualification sample description WCN3680B device characteristics Device name: WCN3680B Package type: 79B WLNSP Package body size: 3.805 mm x 3.82 mm x 0.63 mm BGA pad count: 79 BGA pad composition: SAC405 Processes: 65 nm RF CMOS Fab site: See note. Assembly sites: See note. Solder pad pitch: 0.4 mm minimum WCN3660B device characteristics Device name: WCN3660B Package type: 79B WLNSP Package body size: 3.805 mm x 3.82 mm x 0.63 mm BGA pad count: 79 BGA pad composition: SAC405 Processes: 65 nm RF CMOS Fab site: See the note. Assembly sites: See the note. Solder pad pitch: 0.4 mm minimum NOTE LM80-P0436-70 Rev. B Refer to the WCN3680B/WCB3660B Device Revision Guide (LM80-P0436-71) for fab and assembly sites. MAY CONTAIN U.S. AND INTERNATIONAL EXPORT CONTROLLED INFORMATION 76 EXHIBIT 1 PLEASE READ THIS LICENSE AGREEMENT ("AGREEMENT") CAREFULLY. THIS AGREEMENT IS A BINDING LEGAL AGREEMENT ENTERED INTO BY AND BETWEEN YOU (OR IF YOU ARE ENTERING INTO THIS AGREEMENT ON BEHALF OF AN ENTITY, THEN THE ENTITY THAT YOU REPRESENT) AND QUALCOMM TECHNOLOGIES, INC. ("QTI" "WE" "OUR" OR "US"). THIS IS THE AGREEMENT THAT APPLIES TO YOUR USE OF THE DESIGNATED AND/OR ATTACHED DOCUMENTATION AND ANY UPDATES OR IMPROVEMENTS THEREOF (COLLECTIVELY, "MATERIALS"). BY USING OR COMPLETING THE INSTALLATION OF THE MATERIALS, YOU ARE ACCEPTING THIS AGREEMENT AND YOU AGREE TO BE BOUND BY ITS TERMS AND CONDITIONS. IF YOU DO NOT AGREE TO THESE TERMS, QTI IS UNWILLING TO AND DOES NOT LICENSE THE MATERIALS TO YOU. IF YOU DO NOT AGREE TO THESE TERMS YOU MUST DISCONTINUE AND YOU MAY NOT USE THE MATERIALS OR RETAIN ANY COPIES OF THE MATERIALS. ANY USE OR POSSESSION OF THE MATERIALS BY YOU IS SUBJECT TO THE TERMS AND CONDITIONS SET FORTH IN THIS AGREEMENT. 1.1 License. Subject to the terms and conditions of this Agreement, including, without limitation, the restrictions, conditions, limitations and exclusions set forth in this Agreement, Qualcomm Technologies, Inc. ("QTI") hereby grants to you a nonexclusive, limited license under QTI's copyrights to use the attached Materials; and to reproduce and redistribute a reasonable number of copies of the Materials. 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If any of the provisions of this Agreement are determined to be invalid, illegal, or otherwise unenforceable, the remaining provisions shall remain in full force and effect. This Agreement is entered into solely in the English language, and if for any reason any other language version is prepared by any party, it shall be solely for convenience and the English version shall govern and control all aspects. If You are located in the province of Quebec, Canada, the following applies: The Parties hereby confirm they have requested this Agreement and all related documents be prepared in English. LM80-P0436-70 Rev. B MAY CONTAIN U.S. AND INTERNATIONAL EXPORT CONTROLLED INFORMATION 77