Advanced Power N-CHANNEL ENHANCEMENT MODE
Electronics Corp. POWER MOSFET
▼ Low On-resistance BVDSS 30V
▼ Simple Drive Requirement RDS(ON) 12mΩ
▼ Fast Switching Characteristic ID37A
Description
□
Absolute Maximum Ratings
Symbol Units
VDS V
VGS V
ID@TC=25℃A
ID@TC=100℃A
IDM A
PD@TC=25℃W
TSTG ℃
TJ℃
Symbol Value Units
Rthj-c Maximum Thermal Resistance, Junction-case 4.5 ℃/W
Rthj-a 62.5 ℃/W
Data & specifications subject to change without notice
AP1203GH
27.8
RoHS-compliant Product
Parameter Rating
Drain-Source Voltage 30
Total Power Dissipation
Gate-Source Voltage +20
Continuous Drain Current 37
Continuous Drain Current 23.6
Pulsed Drain Current1150
Storage Temperature Range
Operating Junction Temperature Range
-55 to 150
-55 to 150
200812291
1
Thermal Data
Parameter
Maximum Thermal Resistance, Junction-ambient (PCB mount)3
GDSTO-252(H)
The TO-252 package is widely preferred for commercial-industrial
surface mount applications and suited for low voltage applications
such as DC/DC converters.
G
D
S
A
dvanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-effectiveness.
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol Parameter Test Conditions Min. Typ. Max. Units
BVDSS Drain-Source Breakdown Voltage VGS=0V, ID=250uA 30 - - V
RDS(ON) Static Drain-Source On-Resistance2VGS=10V, ID=20A - - 12 mΩ
VGS=4.5V, ID=15A - - 22 mΩ
VGS(th) Gate Threshold Voltage VDS=VGS, ID=250uA 1 - 3 V
gfs Forward Transconductance VDS=10V, ID=20A - 27 - S
IDSS Drain-Source Leakage Current VDS=30V, VGS=0V - - 10 uA
IGSS Gate-Source Leakage VGS=+20V, VDS=0V - - +100 nA
QgTotal Gate Charge2ID=20A - 6.7 10.5 nC
Qgs Gate-Source Charge VDS=24V - 1.8 - nC
Qgd Gate-Drain ("Miller") Charge VGS=4.5V - 4.3 - nC
td(on) Turn-on Delay Time2VDS=15V - 6.5 - ns
trRise Time ID=20A - 60 - ns
td(off) Turn-off Delay Time RG=3.3Ω,VGS=10V - 15 - ns
tfFall Time RD=0.75Ω-5-
ns
Ciss Input Capacitance VGS=0V - 420 670 pF
Coss Output Capacitance VDS=25V - 130 - pF
Crss Reverse Transfer Capacitance f=1.0MHz - 75 - pF
RgGate Resistance f=1.0MHz - 3.3 5 Ω
Source-Drain Diode
Symbol Parameter Test Conditions Min. Typ. Max. Units
VSD Forward On Voltage2IS=20A, VGS=0V - - 1.2 V
trr Reverse Recovery Time2IS=10A, VGS=0V, - 19 - ns
Qrr Reverse Recovery Charge dI/dt=100A/µs - 10 - nC
Notes:
1.Pulse width limited by max. junction temperature
2.Pulse test
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
AP1203GH
2
3.Surface mounted on 1 in2 copper pad of FR4 board
AP1203GH
Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics
Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance
v.s. Junction Temperature
Fig 5. Forward Characteristic of Fig 6. Gate Threshold Voltage v.s.
Reverse Diode Junction Temperature
3
0
20
40
60
80
0.0 1.0 2.0 3.0 4.0 5.0
VDS , Drain-to-Source Voltage (V)
ID , Drain Current (A)
TC=150oC10V
8.0V
7.0V
6.0V
VG=4.0V
0
20
40
60
80
100
120
0.0 1.0 2.0 3.0 4.0 5.0
VDS , Drain-to-Source Voltage (V)
ID , Drain Current (A)
TC=25oC10V
9.0V
8.0V
7.0V
VG=4.0V
0.4
0.8
1.2
1.6
2.0
-50 0 50 100 150
Tj , Junction Temperature ( oC)
Normalized RDS(ON)
ID=20A
VG=10V
0
5
10
15
20
25
30
0 0.4 0.8 1.2 1.6
VSD , Source-to-Drain Voltage (V)
IS(A)
Tj=25oC
Tj=150oC
8
10
12
14
16
18
20
246810
VGS , Gate-to-Source Voltage (V)
RDS(ON) (m
Ω
)
I
D=15A
TC=25oC
0.0
0.4
0.8
1.2
1.6
-50 0 50 100 150
Tj , Junction Temperature ( oC)
Normalized VGS(th) (V)
AP1203GH
Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics
Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance
Fig 11. Switching Time Waveform Fig 12. Gate Charge Waveform
4
0
1
10
100
1000
0.1 1 10 100
VDS ,Drain-to-Source Voltage (V)
ID (A)
TC=25oC
S
in
g
le Puls
e
100us
1ms
10ms
100ms
DC
0.01
0.1
1
0.00001 0.0001 0.001 0.01 0.1 1
t , Pulse Width (s)
Normalized Th e rmal Re spon se (Rthjc)
PDM
Duty Factor = t/T
Peak Tj = PDM x Rthjc + TC
t
T
0.02
0.01
0.05
0.1
0.2
Duty factor = 0.5
Single Pulse
0
2
4
6
8
10
024681012
QG , Total Gate Charge (nC)
VGS , Gate to Sourc e Voltage ( V)
I D=20A
VDS =15V
VDS =18V
V DS =24V
0
200
400
600
800
1 5 9 1317212529
VDS ,Drain-to-Source Voltage (V)
C (pF)
f=1.0MHz
Ciss
Coss
Crss
Q
VG
4.5V
QGS QGD
QG
Charge
td(on) trtd(off) tf
VDS
VGS
10%
90%
