ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
VRRM =
4500
V
IF(AV)M =
1440
A
IFSM =
25×103
A
V(T0) =
1.75
V
rT =
0.88
mΩ
VDClink
=
2800
V
Fast Recovery Diode
5SDF 10H4520
Doc. No. 5SYA1170-00 March 05
• Low temperature bonding technology
• Industry standard housing
• Cosmic radiation withstand rating
• Low on-state and switching losses
• Optimized for snubberless operation
Blocking
Maximum rated values 1)
Parameter Symbol Conditions Value Unit
Repetitive peak reverse voltage VRRM f = 50 Hz, tp = 10ms, Tvj = 140°C 4500 V
Permanent DC voltage for 100 FIT
failure rate VDClink Ambient cosmic radiation at sea level in open
air. (100% Duty) 2800 V
Permanent DC voltage for 100 FIT
failure rate VDClink Ambient cosmic radiation at sea level in open
air. (5% Duty) 3200 V
Characteristic values
Parameter Symbol Conditions min typ max Unit
Repetitive peak reverse current IRRM VR = VRRM, Tvj = 140°C 100 mA
Mechanical data
Maximum rated values 1)
Parameter Symbol Conditions min typ max Unit
Mounting force Fm 36 40 46 kN
Acceleration a Device unclamped 50 m/s2
Acceleration a Device clamped 200 m/s2
Characteristic values
Parameter Symbol Conditions min typ max Unit
Weight m 0.83 kg
Housing thickness H 25.8 26.1 mm
Surface creepage distance DS 33 mm
Air strike distance Da 20 mm
1) Maximum rated values indicate limits beyond which damage to the device may occur
5SDF 10H4520
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA1170-00 March 05 page 2 of 7
On-state
Maximum rated values 1)
Parameter Symbol
Conditions min typ max Unit
Max. average on-state
current IF(AV)M Half sine wave, TC = 70 °C
1440
A
Max. RMS on-state current I
F(RMS)
2260
A
Max. peak non-repetitive
surge current IFSM
25×103
A
Limiting load integral I2t
tp = 10 ms, Tvj = 140°C, VR = 0 V
3.12×106
A2s
Max. peak non-repetitive
surge current IFSM
16×103
A
Limiting load integral I2t
tp = 30 ms, Tvj = 140°C, VR = 0 V
3.84×106
A2s
Characteristic values
Parameter Symbol
Conditions min typ max Unit
On-state voltage VF IF = 2500 A, Tvj = 140°C 3.1 3.8 V
Threshold voltage V(T0) 1.75 V
Slope resistance rT Tvj = 140°C
IF = 500...2500 A 0.88 mΩ
Turn-on
Characteristic values
Parameter Symbol
Conditions min typ max Unit
dIF/dt = 600 A/µs, Tvj = 140°C
80 V Peak forward recovery
voltage VFRM dIF/dt = 3000 A/µs, Tvj = 140°C
250 V
Turn-off
Maximum rated values 1)
Parameter Symbol
Conditions min typ max Unit
Max. decay rate of on-state
current di/dtcrit IFM = 4000 A, Tvj = 140 °C
VDClink = 2800 V
600 A/µs
Characteristic values
Parameter Symbol
Conditions min typ max Unit
Reverse recovery current IRM
1600 A
Reverse recovery charge Qrr
5600 µC
Turn-off energy Err
IFM = 3300 A, VDC-Link = 2800 V
-dIF/dt = 600 A/µs, LCL = 300 nH
CCL = 10 µF, RCL = 0.65 Ω,
Tvj = 140°C, DCL = 5SDF 10H4520
9.5 J
5SDF 10H4520
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA1170-00 March 05 page 3 of 7
Thermal
Maximum rated values 1)
Parameter Symbol
Conditions min typ max Unit
Operating junction
temperature range Tvj 0 140 °C
Storage temperature range T
stg -40 140 °C
Characteristic values
Parameter Symbol
Conditions min typ max Unit
Thermal resistance junction
to case Rth(j-c) Double-side cooled
Fm = 36...46 kN 10 K/kW
Rth(j-c)A Anode-side cooled
Fm = 36...46 kN 18 K/kW
Rth(j-c)C Cathode-side cooled
Fm = 36...46 kN 22 K/kW
Thermal resistance case to
heatsink Rth(c-h) Double-side cooled
Fm = 36...46 kN 3 K/kW
Rth(c-h) Single-side cooled
Fm = 36...46 kN 6 K/kW
Analytical function for transient thermal
impedance:
)e-(1R = (t)Z n
1i
t/-
ith c)-th(j ∑
=
i
τ
i 1 2 3 4
Rth i(K/kW)
6.599 2.148 1.011 0.249
τi(s) 0.5067 0.0458 0.0054 0.0007
Fig. 1 Transient thermal impedance junction-to-
case.
5SDF 10H4520
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA1170-00 March 05 page 4 of 7
Max. on-state characteristic model:
VF25 FTvjFTvjFTvjTvj IDICIBA ⋅++⋅+⋅+= )1ln(
Valid for IF = 300 – 30000 A
Max. on-state characteristic model:
VF140 FTvjFTvjFTvjTvj IDICIBA ⋅++⋅+⋅+= )1ln(
Valid for IF = 300 – 30000 A
A25 B25 C25 D25 A140 B140 C140 D140
915.50×10-3 347.20×10-6 202.5×10-3 0.00×100 -1.87×100 353.50×10-6 609.20×10-3 0.00×100
Fig. 2 Max. on-state voltage characteristics
Fig. 3 Max. on-state voltage characteristics
Fig. 4 Surge on-state current vs. pulse length. Half-
sine wave. Fig. 5 Surge on-state current vs. number of pulses.
Half-sine wave, 10 ms, 50Hz
5SDF 10H4520
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA1170-00 March 05 page 5 of 7
Fig. 6 Upper scatter range of turn-off energy per
pulse vs. turn-off current. Fig. 7 Upper scatter range of turn-off energy per
pulse vs reverse current rise rate.
Fig. 8 Upper scatter range of repetitive reverse
recovery charge vs reverse current rise rate. Fig. 9 Upper scatter range of reverse recovery
current vs reverse current rise rate.
5SDF 10H4520
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA1170-00 March 05 page 6 of 7
Fig. 10 Max. turn-off energy per pulse vs. on-state
voltage. Fig. 11 Diode Safe Operating Area
VFR
dIF/dt
IF (t)
IF (t)
VF (t)
tfr tfr (typ) 10 µs
Qrr
IRM
-dIF/dt
VF(t), IF (t)
VF (t)
VR (t)
t
Fig. 12 General current and voltage waveforms.
LCL
Li
RS
LLoad
DUT
CCL
VLC
IF
DCL
Fig. 13 Test circuit.
5SDF 10H4520
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
ABB Switzerland Ltd Doc. No. 5SYA1170-00 March 05
Semiconductors
Fabrikstrasse 3
CH-5600 Lenzburg, Switzerland
Telephone +41 (0)58 586 1419
Fax +41 (0)58 586 1306
Email abbsem@ch.abb.com
Internet www.abb.com/semiconductors
Fig. 14 Outline drawing. All dimensions are in millimeters and represent nominal values unless stated otherwise.
Related application notes:
Doc. Nr Titel
5SYA 2036 Recommendations regarding mechanical clamping of Press Pack High Power Semiconductors
Please refer to http://www.abb.com/semiconductors for actual versions.
