BPV22NF, BPV22NFL
www.vishay.com Vishay Semiconductors
Rev. 1.9, 21-Feb-12 1Document Number: 81509
For technical questions, contact: detectortechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Silicon PIN Photodiode
DESCRIPTION
BPV22NF is a PIN photodiode with high speed and high
radiant sensitivity in a black, plastic package with side view
lens and daylight blocking filter. Filter bandwidth is matched
with 870 nm to 950 nm IR emitters. The lens achieves 80 %
of sensitivity improvement in comparison with flat package.
BPV22NFL has long leads, other specifications like
BPV22NF.
FEATURES
Package type: leaded
Package form: side view
Dimensions (in mm): 4.5 x 5 x 6
Radiant sensitive area (in mm2): 7.5
High radiant sensitivity
Daylight blocking filter matched with 870 nm to
950 nm emitters
Fast response times
Angle of half sensitivity: ϕ = ± 60°
Compliant to RoHS Directive 2011/65/EU and in
accordance to WEEE 2002/96/EC
Note
** Please see document “Vishay Material Category Policy”:
www.vishay.com/doc?99902
APPLICATIONS
High speed detector for infrared radiation
Infrared remote control and free air data transmission
systems, e.g. in combination with TSFFxxxx series IR
emitters
Note
Test condition see table “Basic Characteristics”
Note
MOQ: minimum order quantity
94 8633
PRODUCT SUMMARY
COMPONENT Ira (μA) ϕ (deg) λ0.5 (nm)
BPV22NF 85 ± 60 790 to 1050
BPV22NFL 85 ± 60 790 to 1050
ORDERING INFORMATION
ORDERING CODE PACKAGING REMARKS PACKAGE FORM
BPV22NF Bulk MOQ: 4000 pcs, 4000 pcs/bulk Side view
BPV22NFL Bulk MOQ: 4000 pcs, 4000 pcs/bulk Side view, long leads
ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION SYMBOL VALUE UNIT
Reverse voltage VR60 V
Power dissipation Tamb 25 °C PV215 mW
Junction temperature Tj100 °C
Operating temperature range Tamb - 40 to + 100 °C
Storage temperature range Tstg - 40 to + 100 °C
Soldering temperature t 5 s Tsd 260 °C
Thermal resistance junction/ambient Connected with Cu wire, 0.14 mm2 RthJA 350 K/W
BPV22NF, BPV22NFL
www.vishay.com Vishay Semiconductors
Rev. 1.9, 21-Feb-12 2Document Number: 81509
For technical questions, contact: detectortechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
Fig. 1 - Reverse Dark Current vs. Ambient Temperature Fig. 2 - Relative Reverse Light Current vs. Ambient Temperature
BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT
Forward voltage IF = 50 mA VF11.3V
Breakdown voltage IR = 100 μA, E = 0 V(BR) 60 V
Reverse dark current VR = 10 V, E = 0 Iro 230nA
Diode capacitance VR= 0 V, f = 1 MHz, E = 0 CD70 pF
Serial resistance VR= 12 V, f = 1 MHz RS400 Ω
Open circuit voltage Ee = 1 mW/cm2, λ = 950 nm Vo370 mV
Temperature coefficient of VoEe = 1 mW/cm2, λ = 950 nm TKVo - 2.6 mV/K
Short circuit current Ee = 1 mW/cm2, λ = 950 nm Ik80 μA
Reverse light current Ee = 1 mW/cm2, λ = 870 nm,
VR = 5 V Ira 55 85 μA
Temperature coefficient of Ira Ee = 1 mW/cm2, λ = 950 nm,
VR = 10 V TKIra 0.1 %/K
Absolute spectral sensitivity VR = 5 V, λ = 870 nm s(λ)0.57A/W
VR = 5 V, λ = 950 nm s(λ)0.6A/W
Angle of half sensitivity ϕ± 60 deg
Wavelength of peak sensitivity λp940 nm
Range of spectral bandwidth λ0.5 790 to 1050 nm
Quantum efficiency λ = 950 nm η90 %
Noise equivalent power VR = 10 V, λ = 950 nm NEP 4 x 10-14 W/ Hz
Detectivity VR = 10 V, λ = 950 nm D* 6 x 1012 cmHz/W
Rise time VR = 10 V, RL = 1 kΩ, λ = 820 nm tr100 ns
Fall time VR = 10 V, RL = 1 kΩ, λ = 820 nm tf100 ns
Cut-off frequency VR = 12 V, RL = 1 kΩ, λ = 870 nm fc4MHz
VR = 12 V, RL = 1 kΩ, λ = 950 nm fc1MHz
20 40 60 80
1
10
100
1000
100
94 8403
VR = 10 V
Tamb - Ambient Temperature (°C)
I
ro
- Reverse Dark Current (nA)
0.6
0.8
1.0
1.2
1.4
94 8409
V
R
=5V
λ = 950 nm
100806040200
I - Relative Reverse Light Current
T - Ambient Temperature (°C)
amb
ra rel
BPV22NF, BPV22NFL
www.vishay.com Vishay Semiconductors
Rev. 1.9, 21-Feb-12 3Document Number: 81509
For technical questions, contact: detectortechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 3 - Reverse Light Current vs. Irradiance
Fig. 4 - Reverse Light Current vs. Reverse Voltage
Fig. 5 - Diode Capacitance vs. Reverse Voltage
Fig. 6 - Relative Spectral Sensitivity vs. Wavelength
Fig. 7 - Relative Radiant Sensitivity vs. Angular Displacement
0.01 0.1 1
0.1
1
10
100
1000
10
94 8411
I-Reverse Light Current (µA)
ra
E
e
- Irradiance (mW/cm
2
)
V
R
=5V
λ =950nm
0.1 1 10
1
10
100
100
94 8412
1mW/cm
2
0.5 mW/cm
2
0.2 mW/cm
2
0.1 mW/cm
2
I-Reverse Light Current (µA)
ra
0.05 mW/cm
2
0.02 mW/cm
2
λ = 950 nm
V
R
-Reverse Voltage (V)
0
20
40
60
80
948407
E = 0
f = 1 MHz
C
D
- Diode Capacitance (pF)
V
R
- Reverse Voltage (V)
0.1 100
110
94 8426
S(λ)rel - Relative Spectral Sensivity
0.0
0.2
0.4
0.6
0.8
1.0
1.2
750 850 950 1050 1150
λ - Wavelength (nm)
0.4 0.2 0
94 8413
0.6
0.9
0.8
0°°°
30°
10 20
40°
50°
60°
70°
80°
0.7
1.0
ϕ - Angular Displacement
S
rel
- Relative Sensitivity
BPV22NF, BPV22NFL
www.vishay.com Vishay Semiconductors
Rev. 1.9, 21-Feb-12 4Document Number: 81509
For technical questions, contact: detectortechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
PACKAGE DIMENSIONS in millimeters: BPV22NF
PACKAGE DIMENSIONS in millimeters: BPV22NFL
95 11475
specifications
according to DIN
technical drawings
Drawing-No.: 6.544-5199.01-4
Issue: 2; 19.06.01
Area not plane
0.45 + 0.2
- 0.1 0.4 + 0.15
1.1 ± 0.2
4.5 ± 0.2 (2.4)
5+ 0.1
- 0.3
3.2 ± 0.2
6± 0.3
2.5 ± 0.15
8.6 ± 0.3
18.8 ± 0.5
< 0.7
0.65 + 0.1
- 0.2 3.4 + 0.1
- 0.3
AC
2.54 nom.
R 2.25 (sphere)
96 12205
0.63
AC
0.75 - 0.12
± 0.1
Drawing-No.: 6.544-5236.01-4
2.54 nom.
specifications
according to DIN
technical drawings
Area not plane
R 2.25 (sphere)
1.1 ± 0.2
4.5 (2.4)
5
± 0.2
- 0.3
+ 0.1
± 0.3
± 0.5
± 0.3
± 0.15
± 0.2
- 0.3
+ 0.1
10.8
± 0.1
Issue: 2; 07.07.97
3.4
< 0.7
32.5
2.5
6
3.2
0.4
Legal Disclaimer Notice
www.vishay.com Vishay
Revision: 08-Feb-17 1Document Number: 91000
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