Specifications and information are subject to change without notice
TriQuint Semiconductor, Inc • Phone +1-503-615-9000 • FAX: +1-503-615-8900 • e-mail: info-sales@tqs.com • Web site: www.TriQuint.com Page 1 of 5 August 2011
EC1089
¼ Watt, High Linearity InGaP HBT Amplifier
Product Features
• 10 – 2500 MHz
• +24 dBm P1dB
• +41 dBm OIP3
• 15.5 dB Gain at 900 MHz
• 12.2 dB Gain at 1900 MHz
• Lead-free/Green/RoHS
compliant SOT-89 Package
Applications
• Mobile Infrastructure
• Final stage amplifiers for
Repeaters
• Defense / Homeland Security
Product Description
The EC1089 is a high dynamic range driver amplifier in a
low-cost surface mount package. The InGaP/GaAs HBT is
able to achieve high performance across a broad range with
+41 dBm OIP3 and +24 dBm of compressed 1dB power. It
is housed in an industry standard lead-free/green/RoHS-
compliant SOT-89 package. All devices are 100% RF and
DC tested.
The EC1089 is targeted for use as a driver amplifier in
wireless infrastructure where high linearity and medium
power is required. An internal active bias allows the
EC1089 to maintain high linearity over temperature and
operate directly off a single +5 V supply. This combination
makes the device an excellent candidate for transceiver line
cards in current and next generation multi-carrier 3G base
stations.
Functional Diagram
RF IN GND
RF OUT
GND
1
2
3
4
Function Pin No.
Input 1
Output/Bias 3
Ground 2, 4
Specifications
(1)
Parameters Units Min Typ Max
Operational Bandwidth MHz 10 2500
Test Frequency MHz 1900
Gain dB 10.5 12.2
Input Return Loss dB 15
Output Return Loss dB 10
Output P1dB dBm +23.5
Output IP3
(2)
dBm +40 +41
IS-95A Channel Power
@
-
dBm +17
Noise Figure dB 5.9
Test Frequency MHz 2140
Gain dB 11.5
Output P1dB dBm +23.5
Output IP3
(2)
dBm +40
Operating Current Range mA 140 160 175
Device Voltage V +5
1. Test conditions unless otherwise noted: 25 ºC, Supply Voltage = +5 V, 800 MHz in a tuned
application circuit.
2. 3OIP measured with two tones at an output power of +11 dBm/tone separated by 1 MHz. The
suppression on the largest IM3 product is used to calculate the 3OIP using a 2:1 rule.
Absolute Maximum Rating
Parameter Rating
Storage Temperature -65 to +150
°
C
RF Input Power (continuous) +18 dBm
Device Voltage +6 V
Device Current 220 mA
Junction Temperature +220
°
C
Thermal Resistance 149 °C / W
Operation of this device above any of these parameters may cause permanent damage.
Typical Performance
(3)
Parameters Units Typical
Frequency MHz 900 1900 2140
S21 - Gain dB 15.5 12.2 11.5
S11 - Input R.L. dB -14 -15 -15
S22 - Output R.L. dB -10 -10 -10
Output P1dB dBm +24 +23.5 +23.5
Output IP3 dBm +40 +41 +40
Noise Figure dB 5.1 5.9 5.4
Supply Bias +5 V @ 160 mA
3. Typical parameters reflect performance in a tuned application circuit: Supply Voltage = +5 V, I =
160 mA, +25 °C
Ordering Information
Part No. Description
EC1089B-G ¼ Watt, InGaP HBT Gain Block
(lead-free/green/RoHS-compliant SOT-89 Pkg)
Standard T/R size = 1000 pieces on a 7” reel.
Not Recommended For
New Designs
Recommended replacement parts:
TQP7M9101
Specifications and information are subject to change without notice
TriQuint Semiconductor, Inc
•
Phone +1-503-615-9000
•
FAX: +1-503-615-8900
•
e-mail: info-sales@tqs.com
•
Web site: www.TriQuint.com Page 2 of 5 June 2011
EC1089
¼ Watt, High Linearity InGaP HBT Amplifier
Typical Device Data
S-Parameters (Vcc = +5 V, I
cc
= 160 mA, T = 25 °C, unmatched 50 ohm system)
0 1000 2000 3000
Frequency (MHz)
Gain / Maximum Stable Gain
0
5
10
15
20
25
Gain (dB)
DB(|S(2,1)|)
DB(GMax())
0
1.0 1.0-1.0
10.0
10
.0
-1
0.0
5.0
5.0
-5.0
2.0
2.0
-2.0
3.0
3.0
-3.0
4.0
4.0
-4.0
0.2
0.2
-0.2
0.4
0.4
-0.4
0.6
0.6
-0.6
0.8
0.8
-0.8
S11
Swp Max
3000MHz
Swp Min
50MHz
0
1.0 1. 0-1.0
10.0
10.0
-
10.0
5.0
5.
0
-5
.0
2.0
2.0
-2
.0
3.0
3.0
-
3.0
4.0
4.0
-4.0
0.2
0.
2
-0.2
0.4
0.4
-0.4
0.6
0.6
-0.6
0.8
0.8
-0.8
S22
Swp Max
3000MHz
Swp Min
50MHz
Notes:
The gain for the unmatched device in 50 ohm system is shown as the trace in black color. For a tuned circuit for a particular frequency,
it is expected that actual gain will be higher, up to the maximum stable gain. The maximum stable gain is shown in the dashed red line.
The impedance plots are shown from 50 – 3000 MHz, with markers placed at 0.5 – 3.0 GHz in 0.5 GHz increments.
S-Parameters (Vcc = +5 V, I
DS
= 160 mA, T = 25 °C, unmatched 50 ohm system, calibrated to device leads)
Freq (MHz) S11 (dB) S11 (ang) S21 (dB) S21 (ang) S12 (dB) S12 (ang) S22 (dB) S22 (ang)
50 -5.84 -157.07 20.78 151.09 -25.69 17.37 -8.29 -111.19
250 -3.36 -177.43 15.15 141.44 -23.57 6.90 -5.83 -168.30
500 -3.07 173.83 13.70 131.20 -23.27 4.16 -5.74 177.63
750 -2.91 166.79 12.61 117.86 -22.95 2.86 -5.65 169.68
1000 -2.76 159.81 11.62 104.53 -22.54 1.07 -5.50 161.89
1250 -2.63 153.18 10.65 92.06 -22.35 -1.30 -5.41 155.53
1500 -2.55 146.03 9.64 80.38 -21.73 -2.45 -5.40 148.42
1750 -2.46 138.90 8.72 69.61 -21.47 -5.13 -5.32 141.74
2000 -2.44 132.69 7.92 59.90 -21.06 -7.78 -5.22 135.43
2250 -2.39 126.08 7.11 50.30 -20.91 -10.80 -5.19 128.63
2500 -2.33 119.55 6.30 41.62 -20.54 -17.68 -5.18 122.48
2750 -2.30 112.75 5.66 32.78 -19.62 -19.18 -5.19 115.64
3000 -2.27 105.55 5.02 23.64 -19.51 -24.29 -5.11 108.85
Device S-parameters are available for download off of the website at: http://www.triquint.com
Application Circuit PC Board Layout
Circuit Board Material: .014” Getek, 4 layers (other layers added for rigidity), .062” total thickness, 1 oz copper
Microstrip line details: width = .026”, spacing = .026”
Specifications and information are subject to change without notice
TriQuint Semiconductor, Inc
•
Phone +1-503-615-9000
•
FAX: +1-503-615-8900
•
e-mail: info-sales@tqs.com
•
Web site: www.TriQuint.com Page 3 of 5 June 2011
EC1089
¼ Watt, High Linearity InGaP HBT Amplifier
900 MHz Application Circuit (EC1089B-PCB900)
Typical RF Performance
Frequency 900 MHz
S21 – Gain 15.5 dB
S11 – Input Return Loss -15 dB
S22 – Output Return Loss -10 dB
Output IP3
(+11 dBm / tone, 1 MHz spacing)
+40 dBm
Output P1dB +24 dBm
Noise Figure 5.1 dB
Supply Voltage +5 V
Supply Current 160 mA
Measured parameters were taken at 25 °C.
CAP
ID=C4
C=56 pF
CAP
ID=C5
C=56 pF
CAP
ID=C9
C=1 pF
DIODE1
ID=D1 CAP
ID=C3
C=1000 pF
CAP
ID=C2
C=56 pF
CAP
ID=C1
C=100000 pF
IND
ID=L1
L=33 nH
RES
ID=L2
R=0 Ohm
CAP
ID=C7
C=5.6 pF
RES
ID=L3
R=0 Ohm
RES
ID=R1
R=2.7K Ohm
SUBCKT
ID=U1
NET="EC1089"
PORT
P=1
Z=50 Ohm
PORT
P=2
Z=50 Ohm
Vcc = +5 V
5.6 V
C7 should be placed at the silk screen
marker 'F' on the W J evaluation board.
All passive components are of size 0603 unless otherwise noted.
C9 should be placed between
on the W J evaluation board.
size 1206
size 0805
The capacitor should be placed
19° @ 0.9GHz from pin 3The capacitor should be placed
13.7° @ 0.9GHz from pin 1 of the EC1089
silk screen markers '8' and '9'
size 0603
The diode D1 is used as over-voltage protection on t he evaluation
boards. It is not specifically required in the final circuit layout in
a system using a DC regulator.
of the EC1089.
L2, L3 - the 0 ohm resistor - can be removed (with a thru line) in the
final circuit layout.
OIP3 vs. Frequency
37
38
39
40
41
42
43
44
600 700 800 900 1000 1100
Frequency (.9 GHz Matching)
OIP3 (dBm)
25°C -40°C +85°C
Average CDMA ACPR
40
45
50
55
60
65
70
75
80
85
10 12 14 16 18
Average output power (dBm)
ACPR (dBc)
Note: (IS95) ACPR1 measured at
750KHz, Forward 9 Channel
1900 MHz Application Circuit (EC1089B-PCB1900)
Typical RF Performance
Frequency 1900 MHz
S21 – Gain 12.2 dB
S11 – Input Return Loss -15 dB
S22 – Output Return Loss -10 dB
Output IP3
(+11 dBm / tone, 1 MHz spacing)
+41 dBm
Output P1dB +23.5 dBm
Noise Figure 5.9 dB
Supply Voltage +5 V
Supply Current 160 mA
Measured parameters were taken at 25 °C.
CAP
ID=C4
C=56 pF
CAP
ID=C5
C=56 pF
IND
ID=L1
L=18 nH
RES
ID=R1
R=2.7 kOhm
CAP
ID=C7
C=2.4 pF
CAP
ID=C9
C=1.2 pF
DIODE1
ID=D1 CAP
ID=C1
C=56 pF
CAP
ID=C2
C=1000 pF
CAP
ID=C3
C=1e5 pF
RES
ID=L2
R=0 kOhm
AMP
EC1089
RES
ID=L3
R=0 kOhm
Vcc = +5 V
5.6 V
marker "A" on the WJ evaluation board.
C7 should be placed at the silk screen
All passive components are of size 0603 unless otherwise noted.
4.6° @ 1.9GHz from pin 1.of the EC1089
The capacitor should be placed
29° @ 1.9GHz from pin 3.
The capacitor should be placed
marker "6" on the WJ evaluation board.
C9 should be placed at the silk screen
size 1206
size 0805
The Diode D1 is used as over-voltage protection on the evaluation
boards. It is not specifically required in the final circuit layout in
a system using a DC regulator.
L2, L3 - the 0 ohm resistor - can be removed (with a thru line) in the
final circuit layout.
Average CDMA ACPR
40
45
50
55
60
65
70
75
80
85
10 12 14 16 18
Average output power (dBm)
ACPR (dBc)
Note: (IS95) ACPR1 measured at
750KHz, Forward 9 Channel
OIP3 vs. Temperature vs. Frequency
35
37
39
41
43
45
1600 1700 1800 1900 2000 2100
Frequency (MHz)
dBm
25°C -40°C 85°C
Specifications and information are subject to change without notice
TriQuint Semiconductor, Inc
•
Phone +1-503-615-9000
•
FAX: +1-503-615-8900
•
e-mail: info-sales@tqs.com
•
Web site: www.TriQuint.com Page 4 of 5 June 2011
EC1089
¼ Watt, High Linearity InGaP HBT Amplifier
2140 MHz Application Circuit (EC1089B-PCB2140)
Typical RF Performance
Frequency 2140 MHz
S21 – Gain 11.5 dB
S11 – Input Return Loss -15 dB
S22 – Output Return Loss -10 dB
Output IP3
(+10 dBm / tone, 1 MHz spacing)
+40 dBm
Output P1dB +23.5 dBm
Noise Figure 5.4 dB
Supply Voltage +5 V
Supply Current 160 mA
Measured parameters were taken at 25 °C.
CAP
ID=C4
C=56 pF
CAP
ID=C5
C=56 pF
CAP
ID=C9
C=.8 pF
DIODE1
ID=D1 CAP
ID=C3
C=1000 pF
CAP
ID=C2
C=56 pF
CAP
ID=C1
C=100000 pF
IND
ID=L1
L=18 nH
RES
ID=L3
R=0 Ohm
CAP
ID=C6
C=1.5 pF
CAP
ID=L2
C=1.5 pF
RES
ID=R1
R=2.7K Ohm
SUBCKT
ID=U1
NET="EC1089"
PORT
P=1
Z=50 Ohm
PORT
P=2
Z=50 Ohm
Vcc = +5 V
5.6 V
C6 should be placed at the silk screen
marker 'F' on the WJ evaluation board.
All passive components are of size 0603 unless otherwise noted.
C9 should be placed at
on the WJ evaluat ion board.
size 1206
size 0805
The capacitor should be placed
39° @ 2.14GHz from pin 3
The capacitor should be placed
32.6° @ 2.14GHz from pin 1 of the EC1089
silk screen marker '6'
The diode D1 is used as over-voltage protection on the evaluation
boards. It is not specifically required in the final circuit layout in
a system using a DC regulator.
of the EC1089.
L3 - the 0 ohm resistor - can be removed (with a thru line) in the
final circuit layout.
configuration.
Component R1 is shown in the silkscreen but is not used for this
Specifications and information are subject to change without notice
TriQuint Semiconductor, Inc
•
Phone +1-503-615-9000
•
FAX: +1-503-615-8900
•
e-mail: info-sales@tqs.com
•
Web site: www.TriQuint.com Page 5 of 5 June 2011
EC1089
¼ Watt, High Linearity InGaP HBT Amplifier
EC1089B-G (Green / Lead-free SOT-89 Package) Mechanical Information
This package is lead-free/Green/RoHS-compliant. It is compatible with both lead-free (maximum 260 °C reflow temperature) and leaded
(maximum 245 °C reflow temperature) soldering processes. The plating material on the leads is NiPdAu.
Outline Drawing
Land Pattern
Product Marking
The component will be marked with an
“1089G” designator with a lot code marked
below the part designator on the top surface
of the package. The “Y” represents the last
digit of the year the part was manufactured,
the “XXX” is an auto-generated number and
“Z” refers to a wafer number.
Tape and reel specifications for this part are
located on the website in the “Application
Notes” section.
MSL / ESD Rating
ESD Rating: Class 1A
Value: Passes between 250 and 500V
Test: Human Body Model (HBM)
Standard: JEDEC Standard JESD22-A114
MSL Rating: Level 3 at +260 °C convection reflow
Standard: JEDEC Standard J-STD-020
Mounting Config. Notes
1. Ground / thermal vias are critical for the proper
performance of this device. Vias should use a .35mm
(#80 / .0135”) diameter drill and have a final plated
thru diameter of .25 mm (.010”).
2. Add as much copper as possible to inner and outer
layers near the part to ensure optimal thermal
performance.
3. Mounting screws can be added near the part to fasten
the board to a heatsink. Ensure that the ground /
thermal via region contacts the heatsink.
4. Do not put solder mask on the backside of the PC board
in the region where the board contacts the heatsink.
5. RF trace width depends upon the PC board material
and construction.
6. Use 1 oz. Copper minimum.
7. All dimensions are in millimeters (inches). Angles are
in degrees.
1089G