MSCXXXX.PDF 01-19-99
MS1202
DESCRIPTION:DESCRIPTION:
The MS1202 is a epitaxial silicon NPN transistor designed for 12.5 volt
class C applications in the 118 – 136 MHz frequency band and 28 volt FM
ground station applications. Gold metalization and emitter ballast
resistors provide long term product ruggedness and reliability.
ABSOLUTE MAXIMUM RATINGS ABSOLUTE MAXIMUM RATINGS (Tcase = 25°°C)
Symbol
Parameter
Value
Unit
VCBO Collector - Base Voltage 65 V
VCEO Collector - Emitter Voltage 35 V
VEBO Emitter - Base Voltage 4.0 V
PDISS Device Dissipation 15 W
TJJunction Temperature 200 °°C
ICDevice Current 1.0 A
TSTG Storage Temperature -65 to +200
ºC
Thermal DataThermal Data
RTH(J-C) Thermal Resistance Junction-case 11.7 °°C/W
FeaturesFeatures
• 175 MHz
• 12.5 VOLTS
• POUT = 7.0 W
• GP = 8.4 dB MINIMUM
• COMMON EMITTER CONFIGURATION
RF & MICROWAVE TRANSISTORS
FM MOBILE APPLICATIONS
140 COMMERCE DRIVE
MONTGOMERYVILLE, PA
18936-1013
PHONE: (215) 631-9840
FAX: (215) 631-9855
MSCXXXX.PDF 01-19-99
MS1202
ELECTRICAL SPECIFICATIONS (ELECTRICAL SPECIFICATIONS (Tcase = 25Tcase = 25°°C)C)
STATICSTATIC
Symbol
Test Conditions
Value
Min.
Typ.
Max.
Unit
BVces IC = 200 mA VBE = 0 mA 65 --- --- V
BVceo IC = 200 mA IB =0 35 --- --- V
BVebo IE = 10 mA IC = 0 mA 4--- --- V
Icbo VCB = 30 V IE = 0 mA --- --- 1.0 mA
HFE VCE = 5 V IC = 200 mA 5--- 150 ---
DYNAMICDYNAMIC
Symbol
Test Conditions
Value
Min.
Typ.
Max.
Unit
POUT f =175 MHz VCE =28V 7.0 --- --- W
GPf =175 MHz VCE =28V 8.4 --- --- dB
ηηcf =175 MHz VCE =28V 60 %
Cob f =1 MHz VCE =30V --- --- 15 pF
MSCXXXX.PDF 01-19-99
MS1202
PACKAGE MECHANICAL DATA
