T4-LDS-0128, Rev. 3 (6/13/13) ©2013 Microsemi Corporation Page 1 of 4
1N6845U3
Compliant
45 Volts, 30 Amp Schottky Rectifier
Ceramic Surface Mount
Qualified per MIL-PRF-19500/682
Qualified Levels:
JAN, JANTX, and
JANTXV
DESCRIPTION
This low-profile 1N6845U3 Schottky rectifier device is military qualified up to a JANTXV level
for high-reliability applications.
U3 (SMD-0.5)
Package
Important: For the latest information, visit our website http://www.microsemi.com.
FEATURES
Surface mount equivalent of JEDEC registered 1N 6845.
Low profile ceramic SMD.
JAN, JANTX, JANTXV qualifications available per MIL-PRF-19500/682.
RoHS compliant by design.
APPLICA TIONS / BENEFITS
High surge rating.
Low reverse leakage current.
Low forward voltage.
Low power losses.
MAXIMUM RATINGS @ TC = +25 oC unless otherwise noted
MSC – Lawrence
6 Lake Street,
Lawrence, MA 01841
Tel: 1-800-446-1158 or
(978) 620-2600
Fax: (978) 689-0803
MSC – Ireland
Gort Road Business Park,
Ennis, Co. Clare, Ireland
Tel: +353 (0) 65 6840044
Fax: +353 (0) 65 6822298
Website:
www.microsemi.com
Parameters/Test Conditions
Symbol
Value
Unit
Junction and Storage Temperature
TJ and TSTG
-65 to +150
oC
Thermal Resi stan ce Jun cti on-to-Case
RӨJC
2.0
oC/W
Working Peak Reverse Voltage
VRWM
45
V
Average Rectified Output Current @ TC = +55 °C (1)
IO
30
A
Non-Repetitive Sinusoidal Surge Current @ tp = 8.3 ms
IFSM
300
A
Note: 1. Derate IO as shown in Figure 2 where derating starts at TC = +55 °C for rated VRWM. Higher
temperature derat i ng curves also apply to progressively lower voltages as shown.
T4-LDS-0128, Rev. 3 (6/13/13) ©2013 Microsemi Corporation Page 2 of 4
1N6845U3
MECHANICAL and PACKAGING
CASE: Ceramic and gold over nickel plated steel.
TERMINALS: Gold over nickel plated tungsten/copper.
MARKING: Part number, date code, A = anode.
POLARITY: See schematic on last page.
WEIGHT: Approximately 0.9 grams.
See Package Dimensions on last page.
PART NOMENCLATURE
JAN 1N6845 U3
JAN = JAN Level
JANTX = JANTX Level
JANTXV = JANTXV Level
Blank = Commercial
JEDEC t ype number
(see Electrical Characteristics
SMD-0.5 Surface Mount
SYMBOLS & DEFINITIONS
Symbol
Definition
CJ
Junction Capacitance: The junction capacitance in pF at a specified frequency (typically 1MHz) and specified voltage.
IF
Forward Current: The forward current dc value, no alternating component.
IR
Reverse Current: The maximum reverse (leakage) current that will flow at the specified voltage and temperature.
TJ
Junction Temperature: The tempera ture of a semicond uct or junct ion .
VF
Forward Voltage: The forward voltage the device will exhibit at a specified current (typically shown as maximum
value).
VR
Reverse Voltage: The reverse voltage dc value, no alternating component.
ELECTRICAL CHARACTERISTICS @ TC = +25 oC unless otherwise noted
Parameters / Test Conditions Symbol Min. Max. Unit
Forward Voltage*
IF = 10 A (pk)
IF = 20 A (pk)
IF = 40 A (pk)
IF = 10 A (pk), TC = +100 oC
IF = 20 A (pk), TC = +100 °C
IF = 10 A (pk), TC = -55 °C
VF
0.65
0.72
0.86
0.55
0.67
0.78
V
Reverse Current
VR = 45 V
VR = 45 V, TC = +100 °C
IR
0.1
10.0
mA
Junction Capacitance
VR = 5 V
f = 1 MHz
VSIG = 50 mV (p-p)
CJ 800 pF
* Pulse test: Pulse width 300 µsec, duty cycle 2%.
T4-LDS-0128, Rev. 3 (6/13/13) ©2013 Microsemi Corporation Page 3 of 4
1N6845U3
GRAPHS
Forward Current in Amps
FIGURE 1
1N6845U3 Typical VF at IO
TC (°C) (Case)
FIGURE 2
Temperature – Current Derating Curve
V
F
in volts
Sinewave Operation Maximum Io Rating (A)
T4-LDS-0128, Rev. 3 (6/13/13) ©2013 Microsemi Corporation Page 4 of 4
1N6845U3
PACKAGE DIMENSIONS
NOTES:
1. Dimensions are in inches.
2. Millimeters are given for information only.
3. In accordance with ASME Y14.5M, diameters are equivalent to Φx
symbology.
Schematic
Symbol
DIMENSIONS
INCH
MILLIMETERS
Min
Max
Min
Max
BL
0.395
0.405
10.03
10.29
BW
0.291
0.301
7.39
7.65
CH
0.112
0.124
2.84
3.15
LH
0.010
0.020
0.25
0.51
LL1
0.220
0.230
5.59
5.84
LL2
0.115
0.125
2.92
3.18
LS1
0.150 BSC
3.81 BSC
LS2
0.075 BSC
1.91 BSC
LW1
0.281
0.291
7.14
7.39
LW2
0.090
0.100
2.29
2.54
Q1
0.030
-
0.76
-
Q2
0.030
-
0.76
-
Term 1
Common Cathode
Term 2
Anode (See Schematic)
Term 3
Anode (See Schematic)