DTA114E series
PNP -100mA -50V Digital Transistors (Bias Resistor Built-in Transistors) Datasheet
llOutline
Parameter Value VMT3 EMT3F
VCC -50V
IC(MAX.) -100mA
R110kΩ DTA114EM DTA114EEB
R210kΩ (SC-105AA) (SC-89)
EMT3 UMT3F
llFeatures
1) Built-In Biasing Resistors, R1 = R2 = 10kΩ
2) Built-in bias resistors enable the configuration of
an inverter circuit without connecting external
input resistors (see inner circuit) .
3) The bias resistors consist of thin-film resistors
with complete isolation to allow negative biasing
of the input. They also have the advantage of
completely eliminating parasitic effects.
4) Only the on/off conditions need to be set
for operation, making the circuit design easy.
5) Complementary NPN Types: DTC114E series
6) Complex transistors: EMB11/ UMB11N/ IMB11A/
UMA9N/ FMA9A （PNP type）
7) Lead Free/RoHS Compliant.
DTA114EE DTA114EUB
SOT-416(SC-75A) (SC-85)
UMT3 SMT3
DTA114EUA DTA114EKA
SOT-323(SC-70) SOT-346(SC-59)
llInner circuit
llApplication
Switching circuit, Inverter circuit, Interface circuit,
Driver circuit
llPackaging specifications
Part No. Package Package
size
Taping
code
Reel size
(mm)
Tape width
(mm)
Basic
ordering
unit.(pcs)
Marking
DTA114EM VMT3 1212 T2L 180 8 8000 14
DTA114EEB EMT3F 1616 TL 180 8 3000 14
DTA114EE EMT3 1616 TL 180 8 3000 14
DTA114EUB UMT3F 2021 TL 180 8 3000 14
DTA114EUA UMT3 2021 T106 180 8 3000 14
DTA114EKA SMT3 2928 T146 180 8 3000 14
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© 2013 ROHM Co., Ltd. All rights reserved. 1/10 20130912 - Rev.002
DTA114E series Datasheet
llAbsolute maximum ratings (Ta = 25°C)
Parameter Symbol Values Unit
Supply voltage VCC -50 V
Input voltage VIN -40 to 10 V
Output current IO-50 mA
Collector current IC(MAX)*1 -100 mA
Power dissipation
DTA114EM
PD*2
150
mW
DTA114EEB 150
DTA114EE 150
DTA114EUB 200
DTA114EUA 200
DTA114EKA 200
Junction temperature Tj150 ℃
Range of storage temperature Tstg -55 to +150 ℃
llElectrical characteristics (Ta = 25°C)
Parameter Symbol Conditions
Values
Unit
Min. Typ. Max.
Input voltage
VI(off) VCC = -5V, IO = -100μA - - -0.5
V
VI(on) VO = -0.3V, IO = -10mA -3 - -
Output voltage VO(on) IO / II = -10mA / -0.5mA - -0.1 -0.3 V
Input current II VI = -5V - - -0.88 mA
Output current IO(off) VCC = -50V, VI = 0V - - -0.5 μA
DC current gain GI VO = -5V, IO = -5mA 30 - - -
Input resistance R1- 7 10 13 kΩ
Resistance ratio R2/R1- 0.8 1 1.2 -
Transition frequency fT*1 VCE = -10V, IE = 5mA,
f = 100MHz - 250 - MHz
*1 Characteristics of built-in transistor
*2 Each terminal mounted on a reference footprint
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© 2013 ROHM Co., Ltd. All rights reserved. 2/10 20130912 - Rev.002
DTA114E series Datasheet
llElectrical characteristic curves (Ta =25°C)
Fig.1 Input voltage vs. output current
(ON characteristics)
Fig.2 Output current vs. input voltage
(OFF characteristics)
Fig.3 Output current vs. output voltage Fig.4 DC current gain vs. output current
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© 2013 ROHM Co., Ltd. All rights reserved. 3/10 20130912 - Rev.002
DTA114E series Datasheet
llElectrical characteristic curves (Ta =25°C)
Fig.5 Output voltage vs. output current
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© 2013 ROHM Co., Ltd. All rights reserved. 4/10 20130912 - Rev.002
DTA114E series Datasheet
llDimensions
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© 2013 ROHM Co., Ltd. All rights reserved. 5/10 20130912 - Rev.002
DTA114E series Datasheet
llDimensions
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© 2013 ROHM Co., Ltd. All rights reserved. 6/10 20130912 - Rev.002
DTA114E series Datasheet
llDimensions
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© 2013 ROHM Co., Ltd. All rights reserved. 7/10 20130912 - Rev.002
DTA114E series Datasheet
llDimensions
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© 2013 ROHM Co., Ltd. All rights reserved. 8/10 20130912 - Rev.002
DTA114E series Datasheet
llDimensions
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© 2013 ROHM Co., Ltd. All rights reserved. 9/10 20130912 - Rev.002
DTA114E series Datasheet
llDimensions
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© 2013 ROHM Co., Ltd. All rights reserved. 10/10 20130912 - Rev.002
