CPH5504
No. 6793-1/7
1 : Collector
2 : Collector
3 : Base
4 : Emitter Common
5 : Base
SANYO : CPH5
21
453
2.9
0.05
0.4
2.8
1.6
0.2
0.6 0.6
0.9
0.2
0.15
0.95
62712 TKIM/62005EA MSIM TB-00001409/21401 TSIM TA-2946
http://semicon.sanyo.com/en/network
Ordering number : EN6793B
Applications
• DC-DC converter, relay drivers, lamp drivers, motor drivers, fl ash
Features
• Composite type with 2 NPN transistors in one package facilitating high-density mounting
• The CPH5504 is composed of 2 chips each equivaient to the CPH3205
• Ultrasmall package facilitates miniaturization in end products. (mounting height : 0.9mm)
Specifi cations
Absolute Maximum Ratings at Ta=25°C
Parameter Symbol Conditions Ratings Unit
Collector-to-Base Voltage VCBO 100 V
Collector-to-Emitter Voltage VCES 100 V
Collector-to-Emitter Voltage VCEO 50 V
Emitter-to-Base Voltage VEBO 6V
Collector Current IC3A
Collector Current (Pulse) ICP 6A
Base Current IB600 mA
Collector Dissipation PCMounted on a ceramic board (600mm2×0.8mm) 0.9 W
Total Power Dissipation PTMounted on a ceramic board (600mm2×0.8mm) 1.2 W
Junction Temperature Tj 150 °C
Storage Temperature Tstg --55 to +150 °C
Package Dimensions
unit : mm (typ)
7017A-009
CPH5504
NPN Epitaxial Planar Silicon Transistor
High-Current Switching Applications
Product & Package Information
• Package : CPH5
• JEITA, JEDEC : SC-74A, SOT-25
• Minimum Packing Quantity : 3,000 pcs./reel
Packing Type : TL Marking
Electrical Connection
CPH5504-TL-E
ED
LOT No.
TL
543
12
SANYO Semiconductors
DATA SHEET
CPH5504
No. 6793-2/7
Electrical Characteristics at Ta=25°C
Parameter Symbol Conditions Ratings Unit
min typ max
Collector Cutoff Current ICBO VCB=40V, IE=0A 1 μA
Emitter Cutoff Current IEBO VEB=4V, IC=0A 1 μA
DC Current Gain hFE1V
CE=2V, IC=100mA 200 560
hFE2V
CE=2V, IC=3A 70
Gain-Bandwidth Product fTVCE=10V, IC=500mA 380 MHz
Output Capacitance Cob VCB=10V, f=1MHz 13 pF
Collector-to-Emitter Saturation Voltage VCE(sat) IC=1A, IB=50mA 80 120 mV
IC=2A, IB=100mA 140 210 mV
Base-to-Emitter Saturation Voltage VBE(sat) IC=2A, IB=100mA 0.88 1.2 V
Collector-to-Base Breakdown Voltage V(BR)CBO IC=10μA, IE=0A 100 V
Collector-to-Base Breakdown Voltage V(BR)CES IC=100μA,RBE=0Ω100 V
Collector-to-Emitter Breakdown Voltage V(BR)CEO IC=1mA, RBE=∞50 V
Emitter-to-Base Breakdown Voltage V(BR)EBO IE=10μA, IC=0A 6 V
Turn-On Time ton See specifi ed Test Circuit. 35 ns
Storage Time tstg 300 ns
Fall Time tf22 ns
Switching Time Test Circuit
Ordering Information
Device Package Shipping memo
CPH5504-TL-E CPH5 3,000pcs./reel Pb Free
++
50Ω
INPUT OUTPU
T
VR
RBRL
VCC=25V
100μF 470μF
VBE= --5V
PW=20μsIB1
IB2
D.C.≤1%
10IB1= --10IB2=IC=1A
CPH5504
No. 6793-3/7
0
IC -- VCE
0 0.4 0.8 1.2 1.6 2.0
IB=0mA
Collector-to-Emitter Voltage, VCE -- V
Collector Current, IC -- A
1.0
1.5
0.5
2.5
3.0
2.0
4.5
5.0
4.0
3.5
Base-to-Emitter Voltage, VBE -- V
IC -- VBE
Collector Current, IC -- A
3.0
1.5
1.0
2.5
2.0
0.5
00 0.2 0.4 0.6 0.8 1.0
--25°C
VCE=2V
Ta=75°C
25°C
IT02464 IT02465
80mA
100mA
5.0mA
20mA
10mA
40mA
60mA
Collector Current, IC -- A
VCE(sat) -- IC
Collector-to-Emitter
Saturation Voltage, VCE(sat) -- mV
23 57 23 57
0.01 0.1 23 5
1.0
10
100
7
5
3
2
1000
7
5
3
2
IT02469
--25°C
Ta=75°C
25°C
Collector-to-Base Voltage, VCB -- V
Cob -- VCB
Output Capacitance, Cob -- pF
23 57 23 57 7
0.1 1.0 23 5
10
10
7
5
3
2
100
7
5
3
2
IT02468
Collector Current, IC -- A
VCE(sat) -- IC
Collector-to-Emitter
Saturation Voltage, VCE(sat) -- mV
10
100
0.01 0.1
20.01 0.1
23 57 1.0
23 5 23 57357 1.0
23 5 23 57
7
5
3
2
1000
7
5
3
2
f=1MHz
Collector Current, IC -- A
VBE(sat) -- IC
Base-to-Emitter
Saturation Voltage, VBE(sat) -- mV
100
1000
7
5
3
2
5
3
2
IT02470 IT02471
IC / IB=20
IC / IB=50
--25°C
Ta=75°C
25°C
IC / IB=50
Ta= --25°C
75°C
25°C
Collector Current, IC -- A
hFE -- IC
DC Current Gain, hFE
10
100
23 57
0.01 0.1 23 57 23
1.0
2
3
5
7
1000
2
3
5
7
--25°C
Ta=75°C
IT02466 Collector Current, IC -- A
fT -- IC
Gain Bandwidth Product, fT -- MHz
100
5
7
3
2
1000
5
7
3
2
23 57 23 57
0.01 0.1 23 5
1.0 IT02467
VCE=10V
VCE=2V
25°C
CPH5504
No. 6793-4/7
Ambient Temperature, Ta -- °C
PC -- Ta
Collector Dissipation, PC -- W
0
0.2
0.4
0.6
0.8
0.9
1.0
1.2
1.4
0 20 40 60 80 100 120 140 160
Collector-to-Emitter Voltage, VCE -- V
A S O
Collector Current, IC -- A
2
3
5
7
0.01
0.1
2
3
5
7
1.0
2
3
5
7
10
23 57 23 57 23 57
0.1 1.0 10
DC operation
10ms
ICP=6A
IC=3A
IT02472 IT02473
1ms
100ms
100μs
500μs
Ta=25°C
Single pulse
Mounted on a ceramic board (600mm2
×
0.8mm)
1unit
Total Dissipation
1unit
Mounted on a ceramic board (600mm2×0.8mm)
Collector Dissipation, PC(TR1) -- W
PC(TR2) -- PC(TR1)
Collector Dissipation, PC(TR2) -- W
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
IT02474
Mounted on a ceramic board (600mm2×0.8mm)
CPH5504
No. 6793-5/7
Embossed Taping Specifi cation
CPH5504-TL-E
CPH5504
No. 6793-6/7
Outline Drawing Land Pattern Example
CPH5504-TL-E
Mass (g) Unit
0.02
* For reference
mm Unit: mm
0.6
2.4 1.4
0.95 0.95
CPH5504
PS No. 6793-7/7
This catalog provides information as of June, 2012. Specifi cations and information herein are subject
to change without notice.
Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to
"standard application", intended for the use as general electronics equipment. The products mentioned herein
shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life,
aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal
system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten
human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they
grant any guarantee thereof. If you should intend to use our products for new introduction or other application
different from current conditions on the usage of automotive device, communication device, office equipment,
industrial equipment etc. , please consult with us about usage condition (temperature, operation time etc.)
prior to the intended use. If there is no consultation or inquiry before the intended use, our customer shall be
solely responsible for the use.
Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate
the performance, characteristics, and functions of the described products in the independent state, and are
not guarantees of the performance, characteristics, and functions of the described products as mounted in the
customer's products or equipment. To verify symptoms and states that cannot be evaluated in an
independent device, the customer should always evaluate and test devices mounted in the customer's
products or equipment.
SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using
products at values that exceed, even momentarily, rated values (such as maximum ratings, operating
condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor
Co.,Ltd. products described or contained herein.
Regarding monolithic semiconductors, if you should intend to use this IC continuously under high temperature,
high current, high voltage, or drastic temperature change, even if it is used within the range of absolute
maximum ratings or operating conditions, there is a possibility of decrease reliability. Please contact us for a
confirmation.
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or malfunction could give rise to accidents or events that could endanger human lives, trouble that could give
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