SILICON EPITAXIAL PLANAR TYPE 1$$294 LOW VOLTAGE HIGH SPEED SWITCHING. . Low Forward Voltage : Vp=0.54V(Typ.) Unit in mm +05 2.5 -0.3 - Low Reverse Current : Ip=5yA(Max.) 151928 Small Package : SC-59 ~8 cH | #7 al | a} 2 3| = oOo a Oo eo H/o a a 2} 8 MAXIMUM RATINGS (Ta=25C) an =} $e om CHARACTERISTIC SYMBOL RATING UNIT +h = Maximum(Peak) Reverse Voltage VRM 45 V ~ * 7 f 3 Reverse Voltage VR 40 Vv | a Maximum(Peak) Forward Current IFM 300 mA aL L N.c. Average Forward Current Io 100 mA 1d 2. ANODE 3. CATHODE Power Dissipation P 150 mW JEDEC - Junction Temperature Tj 125 C EIAJ SC-589 Storage Temperature Range Tstg -55~125 c TOSHIBA 1-3G1B Weight : 0.013 ELECTRICAL CHARACTERISTICS (Ta=25C) CHARACTERISTIC SYMBOL TEST CONDITION MIN. | TYP. | MAX. | UNIT VF(1) If=1mA - 0.28 - Forward Voltage VF (2) IF=10mA - 0.36 - Vv VF (3) IF=100mA - 0.54 |0.60 Reverse Current IR VR=40V - - 5 uA Total Capacitance CT VrR=0, =1MHz - 18 25 pF Marking a AQ a 4 1150300 m Ip (A) FORWARD CURRENT TOTAL CAPACITANCE Cy (pF) 100m 30 m 0.3m 0.1m Ip VF 3m 0 0.2 04 06 0.8 10 1.2 1. FORWARD VOLTAGE Vp (V) Cy VR 8 30 0 4 8 12 16 20 24 28 32 36 REVERSE VOLTAGE Vp (V) 1191 Ip (A) REVERSE CURRENT 100 4 30 4 10 34 300 n 100 n 30n 0.3n O.n In YR Ta=100T 10 20 30 40 REVERSE VOLTAGE Vp (V) 1$$294 50