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FEATURES
DESCRIPTION/ORDERING INFORMATION
SN74CBT3253CDUAL 1-OF-4 FET MULTIPLEXER/DEMULTIPLEXER
5-V BUS SWITCH WITH –2-V UNDERSHOOT PROTECTION
SCDS123B JULY 2003 REVISED JANUARY 2007
SN74CBT3253C Functionally Identical toIndustry-Standard ’3253 FunctionUndershoot Protection for Off-Isolation on Aand B Ports up to –2 VBidirectional Data Flow, With Near-ZeroPropagation DelayLow ON-State Resistance (r
on
) Characteristics(r
on
= 3 Typical)Low Input/Output Capacitance MinimizesLoading and Signal Distortion(C
io(OFF)
= 5.5 pF Typical)Data and Control Inputs Provide UndershootClamp DiodesLow Power Consumption (I
CC
= 3 µA Max)V
CC
Operating Range From 4 V to 5.5 VData I/Os Support 0 to 5-V Signaling Levels(0.8 V, 1.2 V, 1.5 V, 1.8 V, 2.5 V, 3.3 V, 5 V)Control Inputs Can Be Driven by TTL or5-V/3.3-V CMOS OutputsI
off
Supports Partial-Power-Down ModeOperation
Latch-Up Performance Exceeds 100 mA PerJESD 78, Class IIESD Performance Tested Per JESD 22 2000-V Human-Body Model(A114-B, Class II) 1000-V Charged-Device Model (C101)Supports I
2
C Bus ExpansionSupports Both Digital and AnalogApplications: USB Interface, Bus Isolation,Low-Distortion Signal Gating
The SN74CBT3253C is a high-speed TTL-compatible FET multiplexer/demultiplexer with low ON-stateresistance (r
on
), allowing for minimal propagation delay. Active Undershoot-Protection Circuitry on the A and Bports of the SN74CBT3253C provides protection for undershoot up to –2 V by sensing an undershoot event andensuring that the switch remains in the proper OFF state.
The SN74CBT3253C is organized as two 1-of-4 multiplexer/demultiplexers with separate output-enable (1 OE,2 OE) inputs. The select (S0, S1) inputs control the data path of each multiplexer/demultiplexer. When OE is low,the associated multiplexer/demultiplexer is enabled, and the A port is connected to the B port, allowingbidirectional data flow between ports. When OE is high, the associated multiplexer/demultiplexer is disabled, anda high-impedance state exists between the A and B ports.
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of TexasInstruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
PRODUCTION DATA information is current as of publication date.
Copyright © 2003–2007, Texas Instruments IncorporatedProducts conform to specifications per the terms of the TexasInstruments standard warranty. Production processing does notnecessarily include testing of all parameters.
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DESCRIPTION/ORDERING INFORMATION (CONTINUED)
SN74CBT3253C
DUAL 1-OF-4 FET MULTIPLEXER/DEMULTIPLEXER
5-V BUS SWITCH WITH –2-V UNDERSHOOT PROTECTION
SCDS123B JULY 2003 REVISED JANUARY 2007
This device is fully specified for partial-power-down applications using I
off
. The I
off
feature ensures that damagingcurrent will not backflow through the device when it is powered down. The device has isolation during power off.
To ensure the high-impedance state during power up or power down, OE should be tied to V
CC
through a pullupresistor; the minimum value of the resistor is determined by the current-sinking capability of the driver.
ORDERING INFORMATION
T
A
PACKAGE
(1)
ORDERABLE PART NUMBER TOP-SIDE MARKING
QFN RGY Reel of 1000 SN74CBT3253CRGYR CU253CTube of 40 SN74CBT3253CDSOIC D CBT3253CReel of 2500 SN74CBT3253CDRTube of 80 SN74CBT3253CDB–40 °C to 85 °C SSOP DB CU253CReel of 2000 SN74CBT3253CDBRSSOP (QSOP) DBQ Reel of 2500 SN74CBT3253CDBQR CU253CTube of 90 SN74CBT3253CPWTSSOP PW CU253CReel of 2000 SN74CBT3253CPWR
(1) Package drawings, standard packing quantities, thermal data, symbolization, and PCB design guidelines are available atwww.ti.com/sc/package.
FUNCTION TABLE(each multiplexer/demultiplexer)
INPUTS
INPUT/OUTPUT
FUNCTIONAOE S1 S0
L L L B1 A port = B1 portL L H B2 A port = B2 portL H L B3 A port = B3 portL H H B4 A port = B4 portH X X X Disconnect
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2B1
1B1
2A
1A
S0
S1
1OE
2OE
1B2
1B3
1B4
2B2
2B3
2B4
SW
SW
SW
SW
SW
SW
SW
SW
7
9
14
2
1
15
6
5
4
3
10
11
12
13
EN(1)
SN74CBT3253CDUAL 1-OF-4 FET MULTIPLEXER/DEMULTIPLEXER
5-V BUS SWITCH WITH –2-V UNDERSHOOT PROTECTION
SCDS123B JULY 2003 REVISED JANUARY 2007
LOGIC DIAGRAM (POSITIVE LOGIC)
SIMPLIFIED SCHEMATIC, EACH FET SWITCH (SW)
(1) EN is the internal enable signal applied to the switch.
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Absolute Maximum Ratings
(1)
Recommended Operating Conditions
(1)
SN74CBT3253C
DUAL 1-OF-4 FET MULTIPLEXER/DEMULTIPLEXER
5-V BUS SWITCH WITH –2-V UNDERSHOOT PROTECTION
SCDS123B JULY 2003 REVISED JANUARY 2007
over operating free-air temperature range (unless otherwise noted)
MIN MAX UNIT
V
CC
Supply voltage –0.5 7 VV
IN
Control input voltage range
(2) (3)
–0.5 7 VV
I/O
Switch I/O voltage range
(2) (3) (4)
–0.5 7 VI
IK
Control input clamp current V
IN
< 0 –50 mAI
I/OK
I/O port clamp current V
I/O
< 0 –50 mAI
I/O
ON-state switch current
(5)
±128 mAContinuous current through V
CC
or GND terminals ±100 mAD package
(6)
73DB package
(6)
82θ
JA
Package thermal impedance DBQ package
(6)
90 °C/WPW package
(6)
108RGY package
(7)
39T
stg
Storage temperature range –65 150 °C
(1) Stresses beyond those listed under "absolute maximum ratings" may cause permanent damage to the device. These are stress ratingsonly, and functional operation of the device at these or any other conditions beyond those indicated under "recommended operatingconditions" is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.(2) All voltages are with respect to ground unless otherwise specified.(3) The input and output voltage ratings may be exceeded if the input and output clamp-current ratings are observed.(4) V
I
and V
O
are used to denote specific conditions for V
I/O
.(5) I
I
and I
O
are used to denote specific conditions for I
I/O
.(6) The package thermal impedance is calculated in accordance with JESD 51-7.(7) The package thermal impedance is calculated in accordance with JESD 51-5.
MIN MAX UNIT
V
CC
Supply voltage 4 5.5 VV
IH
High-level control input voltage 2 5.5 VV
IL
Low-level control input voltage 0 0.8 VV
I/O
Data input/output voltage 0 5.5 VT
A
Operating free-air temperature –40 85 °C
(1) All unused control inputs of the device must be held at V
CC
or GND to ensure proper device operation. Refer to the TI application report,Implications of Slow or Floating CMOS Inputs, literature number SCBA004.
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Electrical Characteristics
(1)
Switching Characteristics
SN74CBT3253CDUAL 1-OF-4 FET MULTIPLEXER/DEMULTIPLEXER
5-V BUS SWITCH WITH –2-V UNDERSHOOT PROTECTION
SCDS123B JULY 2003 REVISED JANUARY 2007
over recommended operating free-air temperature range (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP
(2)
MAX UNIT
V
IK
Control inputs V
CC
= 4.5 V, I
IN
= –18 mA –1.8 V0 mA > I
I
–50 mA,V
IKU
Data inputs V
CC
= 5 V, Switch OFF –2 VV
IN
= V
CC
or GND,I
IN
Control inputs V
CC
= 5.5 V, V
IN
= V
CC
or GND ±1µAV
O
= 0 to 5.5 V, Switch OFF,I
OZ
(3)
V
CC
= 5.5 V, ±10 µAV
I
= 0, V
IN
= V
CC
or GNDI
off
V
CC
= 0, V
O
= 0 to 5.5 V, V
I
= 0 10 µAI
I/O
= 0,I
CC
V
CC
= 5.5 V, Switch ON or OFF 3 µAV
IN
= V
CC
or GND,I
CC
(4)
Control inputs V
CC
= 5.5 V, One input at 3.4 V, Other inputs at V
CC
or GND 2.5 mAC
in
Control inputs V
IN
= 3 V or 0 3.5 pFA port 14C
io(OFF)
V
I/O
= 3 V or 0, Switch OFF, V
IN
= V
CC
or GND pFB port 5.5C
io(ON)
V
I/O
= 3 V or 0, Switch ON, V
IN
= V
CC
or GND 22 pFV
CC
= 4 V,
V
I
= 2.4 V, I
O
= –15 mA 8 12TYP at V
CC
= 4 V
I
O
= 64 mA 3 6r
on
(5)
V
I
= 0V
CC
= 4.5 V I
O
= 30 mA 3 6V
I
= 2.4 V, I
O
= –15 mA 5 10
(1) V
IN
and I
IN
refer to control inputs. V
I
, V
O
, I
I
, and I
O
refer to data pins.(2) All typical values are at V
CC
= 5 V (unless otherwise noted), T
A
= 25 °C.(3) For I/O ports, the parameter I
OZ
includes the input leakage current.(4) This is the increase in supply current for each input that is at the specified voltage level, rather than V
CC
or GND(5) Measured by the voltage drop between the A and B terminals at the indicated current through the switch. ON-state resistance isdetermined by the lower of the voltages of the two (A or B) terminals.
over recommended operating free-air temperature range, C
L
= 50 pF (unless otherwise noted) (see Figure 3 )
V
CC
= 5 VV
CC
= 4 VFROM TO
±0.5 VPARAMETER UNIT(INPUT) (OUTPUT)
MIN MAX MIN MAX
t
pd
(1)
A or B B or A 0.24 0.15 nst
pd(s)
S A 5.9 1.5 5.4 nsS B 6.2 1.5 5.8t
en
nsOE A or B 5.7 1.5 5.3S B 6.2 1.5 5.8t
dis
nsOE A or B 5.7 1.5 5.3
(1) The propagation delay is the calculated RC time constant of the typical ON-state resistance of the switch and the specified loadcapacitance, when driven by an ideal voltage source (zero output impedance).
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Undershoot Characteristics
100 kΩ
50 Ω
100 kΩ
SN74CBT3253C
DUAL 1-OF-4 FET MULTIPLEXER/DEMULTIPLEXER
5-V BUS SWITCH WITH –2-V UNDERSHOOT PROTECTION
SCDS123B JULY 2003 REVISED JANUARY 2007
See Figure 1 and Figure 2
PARAMETER TEST CONDITIONS MIN TYP
(1)
MAX UNIT
V
OUTU
V
CC
= 5.5 V, Switch OFF, V
IN
= V
CC
or GND 2 V
OH
0.3 V
(1) All typical values are at V
CC
= 5 V (unless otherwise noted), T
A
= 25 °C.
Figure 1. Device Test Setup Figure 2. Transient Input Voltage (V
I
) andOutput Voltage (V
OUTU
) Waveforms(Switch OFF)
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PARAMETER MEASUREMENT INFORMATION
VOH
VOL
CL
(see Note A)
TEST CIRCUIT
S1 7 V
Open
GND
RL
RL
tPLH tPHL
Output
Waveform 1
S1 at 7 V
(see Note B)
Output
Waveform 2
S1 at Open
(see Note B)
tPZL
tPZH
tPLZ
tPHZ
3 V
0 V
VOH
VOL
0 V
VOL + V
VOH − V
0 V
Output
Control
(VIN)
3 V
3.5 V
VOLTAGE WAVEFORMS
PROPAGATION DELAY TIMES (tpd(s))VOLTAGE WAVEFORMS
ENABLE AND DISABLE TIMES
Output
NOTES: A. CL includes probe and jig capacitance.
B. Waveform 1 is for an output with internal conditions such that the output is low, except when disabled by the output control.
Waveform 2 is for an output with internal conditions such that the output is high, except when disabled by the output control.
C. All input pulses are supplied by generators having the following characteristics: PRR 10 MHz, ZO = 50 , tr 2.5 ns, tf 2.5 ns.
D. The outputs are measured one at a time, with one transition per measurement.
E. tPLZ and tPHZ are the same as tdis.
F. tPZL and tPZH are the same as ten.
G. tPLH and tPHL are the same as tpd(s). The tpd propagation delay is the calculated RC time constant of the typical ON-state resistance
of the switch and the specified load capacitance, when driven by an ideal voltage source (zero output impedance).
H. All parameters and waveforms are not applicable to all devices.
1.5 V 1.5 V
1.5 V 1.5 V
1.5 V 1.5 V
1.5 V
1.5 V
50
VG1
VCC
DUT
50
VIN
50
VG2 50
VI
TEST RL
S1 V
CL
5 V ± 0.5 V
4 V
VCC VI
tPHZ/tPZH
tPLZ/tPZL
tpd(s)
5 V ± 0.5 V
4 V
5 V ± 0.5 V
4 V
Open
Open
7 V
7 V
Open
Open
500
500
500
500
500
500
VCC or GND
VCC or GND
GND
GND
VCC
VCC
50 pF
50 pF
50 pF
50 pF
50 pF
50 pF
0.3 V
0.3 V
0.3 V
0.3 V
Output
Control
(VIN)
Input Generator
Input Generator VO
SN74CBT3253CDUAL 1-OF-4 FET MULTIPLEXER/DEMULTIPLEXER
5-V BUS SWITCH WITH –2-V UNDERSHOOT PROTECTION
SCDS123B JULY 2003 REVISED JANUARY 2007
Figure 3. Test Circuit and Voltage Waveforms
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PACKAGE OPTION ADDENDUM
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Addendum-Page 1
PACKAGING INFORMATION
Orderable Device Status (1) Package Type Package
Drawing Pins Package Qty Eco Plan (2) Lead/
Ball Finish MSL Peak Temp (3) Samples
(Requires Login)
SN74CBT3253CD ACTIVE SOIC D 16 40 Green (RoHS
& no Sb/Br) CU NIPDAU Level-1-260C-UNLIM
SN74CBT3253CDBQR ACTIVE SSOP DBQ 16 2500 Green (RoHS
& no Sb/Br) CU NIPDAU Level-2-260C-1 YEAR
SN74CBT3253CDBQRE4 ACTIVE SSOP DBQ 16 2500 Green (RoHS
& no Sb/Br) CU NIPDAU Level-2-260C-1 YEAR
SN74CBT3253CDBQRG4 ACTIVE SSOP DBQ 16 2500 Green (RoHS
& no Sb/Br) CU NIPDAU Level-2-260C-1 YEAR
SN74CBT3253CDBR ACTIVE SSOP DB 16 2000 Green (RoHS
& no Sb/Br) CU NIPDAU Level-1-260C-UNLIM
SN74CBT3253CDBRE4 ACTIVE SSOP DB 16 2000 Green (RoHS
& no Sb/Br) CU NIPDAU Level-1-260C-UNLIM
SN74CBT3253CDBRG4 ACTIVE SSOP DB 16 2000 Green (RoHS
& no Sb/Br) CU NIPDAU Level-1-260C-UNLIM
SN74CBT3253CDE4 ACTIVE SOIC D 16 40 Green (RoHS
& no Sb/Br) CU NIPDAU Level-1-260C-UNLIM
SN74CBT3253CDG4 ACTIVE SOIC D 16 40 Green (RoHS
& no Sb/Br) CU NIPDAU Level-1-260C-UNLIM
SN74CBT3253CDR ACTIVE SOIC D 16 2500 Green (RoHS
& no Sb/Br) CU NIPDAU Level-1-260C-UNLIM
SN74CBT3253CDRE4 ACTIVE SOIC D 16 2500 Green (RoHS
& no Sb/Br) CU NIPDAU Level-1-260C-UNLIM
SN74CBT3253CDRG4 ACTIVE SOIC D 16 2500 Green (RoHS
& no Sb/Br) CU NIPDAU Level-1-260C-UNLIM
SN74CBT3253CPW ACTIVE TSSOP PW 16 90 Green (RoHS
& no Sb/Br) CU NIPDAU Level-1-260C-UNLIM
SN74CBT3253CPWE4 ACTIVE TSSOP PW 16 90 Green (RoHS
& no Sb/Br) CU NIPDAU Level-1-260C-UNLIM
SN74CBT3253CPWG4 ACTIVE TSSOP PW 16 90 Green (RoHS
& no Sb/Br) CU NIPDAU Level-1-260C-UNLIM
SN74CBT3253CPWR ACTIVE TSSOP PW 16 2000 Green (RoHS
& no Sb/Br) CU NIPDAU Level-1-260C-UNLIM
SN74CBT3253CPWRE4 ACTIVE TSSOP PW 16 2000 Green (RoHS
& no Sb/Br) CU NIPDAU Level-1-260C-UNLIM
PACKAGE OPTION ADDENDUM
www.ti.com 16-Aug-2012
Addendum-Page 2
Orderable Device Status (1) Package Type Package
Drawing Pins Package Qty Eco Plan (2) Lead/
Ball Finish MSL Peak Temp (3) Samples
(Requires Login)
SN74CBT3253CPWRG4 ACTIVE TSSOP PW 16 2000 Green (RoHS
& no Sb/Br) CU NIPDAU Level-1-260C-UNLIM
SN74CBT3253CRGYR ACTIVE VQFN RGY 16 3000 Green (RoHS
& no Sb/Br) CU NIPDAU Level-2-260C-1 YEAR
SN74CBT3253CRGYRG4 ACTIVE VQFN RGY 16 3000 Green (RoHS
& no Sb/Br) CU NIPDAU Level-2-260C-1 YEAR
(1) The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.
(2) Eco Plan - The planned eco-friendly classification: Pb-Free (RoHS), Pb-Free (RoHS Exempt), or Green (RoHS & no Sb/Br) - please check http://www.ti.com/productcontent for the latest availability
information and additional product content details.
TBD: The Pb-Free/Green conversion plan has not been defined.
Pb-Free (RoHS): TI's terms "Lead-Free" or "Pb-Free" mean semiconductor products that are compatible with the current RoHS requirements for all 6 substances, including the requirement that
lead not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, TI Pb-Free products are suitable for use in specified lead-free processes.
Pb-Free (RoHS Exempt): This component has a RoHS exemption for either 1) lead-based flip-chip solder bumps used between the die and package, or 2) lead-based die adhesive used between
the die and leadframe. The component is otherwise considered Pb-Free (RoHS compatible) as defined above.
Green (RoHS & no Sb/Br): TI defines "Green" to mean Pb-Free (RoHS compatible), and free of Bromine (Br) and Antimony (Sb) based flame retardants (Br or Sb do not exceed 0.1% by weight
in homogeneous material)
(3) MSL, Peak Temp. -- The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature.
Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided. TI bases its knowledge and belief on information
provided by third parties, and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and
continues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals.
TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limited information may not be available for release.
In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI to Customer on an annual basis.
TAPE AND REEL INFORMATION
*All dimensions are nominal
Device Package
Type Package
Drawing Pins SPQ Reel
Diameter
(mm)
Reel
Width
W1 (mm)
A0
(mm) B0
(mm) K0
(mm) P1
(mm) W
(mm) Pin1
Quadrant
SN74CBT3253CDBR SSOP DB 16 2000 330.0 16.4 8.2 6.6 2.5 12.0 16.0 Q1
SN74CBT3253CDR SOIC D 16 2500 330.0 16.4 6.5 10.3 2.1 8.0 16.0 Q1
SN74CBT3253CPWR TSSOP PW 16 2000 330.0 12.4 6.9 5.6 1.6 8.0 12.0 Q1
SN74CBT3253CRGYR VQFN RGY 16 3000 330.0 12.4 3.8 4.3 1.5 8.0 12.0 Q1
PACKAGE MATERIALS INFORMATION
www.ti.com 14-Jul-2012
Pack Materials-Page 1
*All dimensions are nominal
Device Package Type Package Drawing Pins SPQ Length (mm) Width (mm) Height (mm)
SN74CBT3253CDBR SSOP DB 16 2000 367.0 367.0 38.0
SN74CBT3253CDR SOIC D 16 2500 333.2 345.9 28.6
SN74CBT3253CPWR TSSOP PW 16 2000 367.0 367.0 35.0
SN74CBT3253CRGYR VQFN RGY 16 3000 367.0 367.0 35.0
PACKAGE MATERIALS INFORMATION
www.ti.com 14-Jul-2012
Pack Materials-Page 2