HGTG12N60B3, HGTP12N60B3, HGT1S12N60B3S Data Sheet April 2002 27A, 600V, UFS Series N-Channel IGBTs Features This family of MOS gated high voltage switching devices combine the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25oC and 150oC. * 27A, 600V, TC = 25oC * 600V Switching SOA Capability * Typical Fall Time. . . . . . . . . . . . . . . . 112ns at TJ = 150oC * Short Circuit Rating * Low Conduction Loss The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as: AC and DC motor controls, power supplies and drivers for solenoids, relays and contactors. Packaging JEDEC TO-220AB (ALTERNATE VERSION) COLLECTOR (FLANGE) Formerly developmental type TA49171. E C G Ordering Information PART NUMBER PACKAGE BRAND HGTP12N60B3 TO-220AB G12N60B3 HGTG12N60B3 TO-247 G12N60B3 HGT1S12N60B3S TO-263AB G12N60B3 JEDEC TO-263AB NOTE: When ordering, use the entire part number. Add the suffix 9A to obtain the TO-263AB variant in tape and reel, i.e. HGT1S12N60B3S9A. COLLECTOR (FLANGE) G E Symbol JEDEC STYLE TO-247 C E C G G E COLLECTOR (BOTTOM SIDE METAL) FAIRCHILD CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS 4,364,073 4,417,385 4,430,792 4,443,931 4,466,176 4,516,143 4,532,534 4,587,713 4,598,461 4,605,948 4,620,211 4,631,564 4,639,754 4,639,762 4,641,162 4,644,637 4,682,195 4,684,413 4,694,313 4,717,679 4,743,952 4,783,690 4,794,432 4,801,986 4,803,533 4,809,045 4,809,047 4,810,665 4,823,176 4,837,606 4,860,080 4,883,767 4,888,627 4,890,143 4,901,127 4,904,609 4,933,740 4,963,951 4,969,027 (c)2002 Fairchild Semiconductor Corporation HGTG12N60B3, HGTP12N60B3, HGT1S12N60B3S Rev. C HGTG12N60B3, HGTP12N60B3, HGT1S12N60B3S Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified HGTG12N60B3, HGTP12N60B3, HGT1S12N60B3S UNITS Collector to Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .BVCES 600 V Collector Current Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IC25 27 A 12 A At TC = 110oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IC110 Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ICM 110 A Gate to Emitter Voltage Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGES 20 V Gate to Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VGEM 30 V Switching Safe Operating Area at TJ = 150oC (Figure 2) . . . . . . . . . . . . . . . . . . . . . . . SSOA 96A at 600V Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD 104 W Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.83 W/oC Reverse Voltage Avalanche Energy . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . EARV 100 mJ Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ , TSTG -55 to 150 oC Maximum Temperature for Soldering Leads at 0.063in (1.6mm) from Case for 10s . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL Package Body for 10s, see Tech Brief 334. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .Tpkg 300 260 oC oC Short Circuit Withstand Time (Note 2) at VGE = 12V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .tSC 5 s Short Circuit Withstand Time (Note 2) at VGE = 10V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .tSC 10 s CAUTION: Stresses above those listed in "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. NOTES: 1. Pulse width limited by maximum junction temperature. 2. VCE(PK) = 360V, TJ = 125oC, R G = 25. Electrical Specifications TC = 25oC, Unless Otherwise Specified PARAMETER Collector to Emitter Breakdown Voltage Collector to Emitter Leakage Current Collector to Emitter Saturation Voltage Gate to Emitter Threshold Voltage Gate to Emitter Leakage Current SYMBOL BVCES ICES VCE(SAT) VGE(TH) IGES TEST CONDITIONS IC = 250A, VGE = 0V VCE = 600V IC = 12A VGE = 15V - - V - 250 A TC = 150oC - - 2.0 mA TC = 25oC TC = 150oC - 1.6 2.1 V - 1.7 2.5 V 4.5 4.9 6.0 V IC = 250A, VCE = VGE VGE = 20V - - 250 nA 96 - - A IC = 12A, VCE = 0.5 BVCES - 7.3 - V VGE = 15V - 51 60 nC VGE = 20V - 68 78 nC - 26 - ns - 23 - ns - 150 - ns - 62 - ns Gate to Emitter Plateau Voltage VGEP On-State Gate Charge Qg(ON) IC = 12A VCE = 300V Current Turn-On Delay Time td(ON)I IGBT and Diode at TJ = 25oC ICE = 12A VCE = 480V VGE = 15V RG = 25 L = 1mH Test Circuit (Figure 17) Current Fall Time trI tfI UNITS - TJ = 150oC, RG = 25, VGE = 15V L = 100H, VCE = 600V td(OFF)I MAX 600 SSOA Current Turn-Off Delay Time TYP TC = 25oC Switching SOA Current Rise Time MIN Turn-On Energy (Note 4) EON1 - 150 - J Turn-On Energy (Note 4) EON2 - 304 350 J Turn-Off Energy (Note 3) EOFF - 250 350 J (c)2002 Fairchild Semiconductor Corporation HGTG12N60B3, HGTP12N60B3, HGT1S12N60B3S Rev. C HGTG12N60B3, HGTP12N60B3, HGT1S12N60B3S Electrical Specifications TC = 25oC, Unless Otherwise Specified (Continued) PARAMETER SYMBOL Current Turn-On Delay Time td(ON)I Current Rise Time trI Current Turn-Off Delay Time td(OFF)I Current Fall Time tfI Turn-On Energy (Note 4) EON1 TEST CONDITIONS IGBT and Diode at TJ = 150oC ICE = 12A VCE = 480V VGE = 15V RG = 25 L = 1mH Test Circuit (Figure 17) MIN TYP MAX UNITS - 22 - ns - 23 - ns - 280 295 ns - 112 175 ns - 165 - J J Turn-On Energy (Note 4) EON2 - 500 525 Turn-Off Energy (Note 3) EOFF - 660 800 J 1.2 oC/W Thermal Resistance Junction To Case - RJC - NOTES: 3. Turn-Off Energy Loss (EOFF) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse and ending at the point where the collector current equals zero (ICE = 0A). All devices were tested per JEDEC Standard No. 24-1 Method for Measurement of Power Device Turn-Off Switching Loss. This test method produces the true total Turn-Off Energy Loss. 4. Values for two Turn-On loss conditions are shown for the convenience of the circuit designer. EON1 is the turn-on loss of the IGBT only. EON2 is the turn-on loss when a typical diode is used in the test circuit and the diode is at the same TJ as the IGBT. The diode type is specified in Figure 17. Unless Otherwise Specified ICE , DC COLLECTOR CURRENT (A) 30 VGE = 15V 25 20 15 10 5 0 25 50 75 100 125 TC , CASE TEMPERATURE (oC) FIGURE 1. DC COLLECTOR CURRENT vs CASE TEMPERATURE (c)2002 Fairchild Semiconductor Corporation 150 ICE , COLLECTOR TO EMITTER CURRENT (A) Typical Performance Curves 100 TJ = 150oC, RG = 25, VGE = 15V, L = 100H 90 80 70 60 50 40 30 20 10 0 0 100 200 300 400 500 600 700 VCE, COLLECTOR TO EMITTER VOLTAGE (V) FIGURE 2. MINIMUM SWITCHING SAFE OPERATING AREA HGTG12N60B3, HGTP12N60B3, HGT1S12N60B3S Rev. C HGTG12N60B3, HGTP12N60B3, HGT1S12N60B3S 300 fMAX , OPERATING FREQUENCY (kHz) TJ = 150oC, RG = 25, L = 1mH, V CE = 480V 100 TC VGE 75oC 75oC 110oC 110oC 15V 10V 15V 10V 10 fMAX1 = 0.05 / (td(OFF)I + td(ON)I) fMAX2 = (PD - PC) / (EON2 + EOFF) PC = CONDUCTION DISSIPATION (DUTY FACTOR = 50%) ROJC = 1.2oC/W, SEE NOTES 1 2 10 3 20 30 16 14 90 ISC 12 80 10 70 8 60 6 50 tSC 4 40 2 10 11 60 TC = 150oC 40 TC = 25oC DUTY CYCLE <0.5%, VGE = 10V PULSE DURATION = 250s 10 0 0 2 4 6 8 10 ICE , COLLECTOR TO EMITTER CURRENT (A) ICE , COLLECTOR TO EMITTER CURRENT (A) TC = -55oC 20 180 DUTY CYCLE <0.5%, VGE = 15V 160 PULSE DURATION = 250s 14 15 30 TC = -55oC 140 120 100 TC = 150oC 80 60 TC = 25oC 40 20 0 0 VCE, COLLECTOR TO EMITTER VOLTAGE (V) 2 4 6 8 10 VCE , COLLECTOR TO EMITTER VOLTAGE (V) FIGURE 5. COLLECTOR TO EMITTER ON-STATE VOLTAGE FIGURE 6. COLLECTOR TO EMITTER ON-STATE VOLTAGE RG = 25, L = 1mH, VCE = 480V 2.5 TJ = 25oC, TJ = 150oC, VGE = 10V 2.0 1.5 1.0 0.5 TJ = 25oC, TJ = 150oC, VGE = 15V 0 5 10 15 20 25 ICE , COLLECTOR TO EMITTER CURRENT (A) FIGURE 7. TURN-ON ENERGY LOSS vs COLLECTOR TO EMITTER CURRENT (c)2002 Fairchild Semiconductor Corporation 30 EOFF, TURN-OFF ENERGY LOSS (mJ) 2.5 3.0 EON , TURN-ON ENERGY LOSS (mJ) 13 FIGURE 4. SHORT CIRCUIT WITHSTAND TIME 70 30 12 VGE , GATE TO EMITTER VOLTAGE (V) ICE , COLLECTOR TO EMITTER CURRENT (A) FIGURE 3. OPERATING FREQUENCY vs COLLECTOR TO EMITTER CURRENT 50 100 VCE = 360V, RG = 25, TJ = 125oC ISC , PEAK SHORT CIRCUIT CURRENT (A) Unless Otherwise Specified (Continued) tSC , SHORT CIRCUIT WITHSTAND TIME (s) Typical Performance Curves RG = 25, L = 1mH, VCE = 480V 2.0 1.5 TJ = 150oC; VGE = 10V OR 15V 1.0 0.5 TJ = 25oC; VGE = 10V OR 15V 0 5 10 15 20 25 30 ICE , COLLECTOR TO EMITTER CURRENT (A) FIGURE 8. TURN-OFF ENERGY LOSS vs COLLECTOR TO EMITTER CURRENT HGTG12N60B3, HGTP12N60B3, HGT1S12N60B3S Rev. C HGTG12N60B3, HGTP12N60B3, HGT1S12N60B3S Typical Performance Curves Unless Otherwise Specified (Continued) 55 150 RG = 25, L = 1mH, VCE = 480V 50 125 T = 25 oC, T = 150oC, V J J GE = 10V trI , RISE TIME (ns) tdI , TURN-ON DELAY TIME (ns) RG = 25, L = 1mH, VCE = 480V 45 40 TJ = 25oC, TJ = 150oC, VGE = 10V 35 TJ = 25oC, TJ = 150oC, VGE = 15V 30 75 50 25 25 20 100 TJ = 25oC and TJ = 150oC, VGE = 15V 0 5 10 15 25 20 30 10 5 ICE , COLLECTOR TO EMITTER CURRENT (A) 275 130 250 120 tfI , FALL TIME (ns) td(OFF)I , TURN-OFF DELAY TIME (ns) 140 TJ = 150oC, VGE = 10V, VGE = 15V TJ = 25oC, VGE = 10V, VGE = 15V 175 110 TJ = 150oC, VGE = 10V, VGE = 15V 100 90 150 80 125 70 TJ = 25oC, VGE = 10V OR 15V 60 5 10 15 20 5 30 25 10 VGE, GATE TO EMITTER VOLTAGE (V) ICE , COLLECTOR TO EMITTER CURRENT (A) TC = -55oC DUTY CYCLE <0.5%, VCE = 10V 160 PULSE DURATION = 250s TC = 25oC 140 120 100 TC = 150oC 80 60 40 20 5 6 7 8 9 10 11 12 13 VGE , GATE TO EMITTER VOLTAGE (V) FIGURE 13. TRANSFER CHARACTERISTIC (c)2002 Fairchild Semiconductor Corporation 25 30 14 15 Ig (REF) = 1mA, R L = 25, TC = 25oC 12 VCE = 600V 9 6 VCE = 200V VCE = 400V 3 0 4 20 FIGURE 12. FALL TIME vs COLLECTOR TO EMITTER CURRENT 15 180 15 ICE , COLLECTOR TO EMITTER CURRENT (A) ICE , COLLECTOR TO EMITTER CURRENT (A) FIGURE 11. TURN-OFF DELAY TIME vs COLLECTOR TO EMITTER CURRENT 0 30 RG = 25, L = 1mH, VCE = 480V RG = 25, L = 1mH, VCE = 480V 100 25 FIGURE 10. TURN-ON RISE TIME vs COLLECTOR TO EMITTER CURRENT 300 200 20 ICE , COLLECTOR TO EMITTER CURRENT (A) FIGURE 9. TURN-ON DELAY TIME vs COLLECTOR TO EMITTER CURRENT 225 15 0 5 10 15 20 25 30 35 40 45 50 Qg, GATE CHARGE (nC) FIGURE 14. GATE CHARGE WAVEFORM HGTG12N60B3, HGTP12N60B3, HGT1S12N60B3S Rev. C HGTG12N60B3, HGTP12N60B3, HGT1S12N60B3S Typical Performance Curves Unless Otherwise Specified (Continued) 2.50 FREQUENCY = 1MHz CIES C, CAPACITANCE (nF) 2.00 1.50 1.00 COES 0.50 CRES 0 0 5 10 15 20 25 VCE, COLLECTOR TO EMITTER VOLTAGE (V) ZJC , NORMALIZED THERMAL RESPONSE FIGURE 15. CAPACITANCE vs COLLECTOR TO EMITTER VOLTAGE 100 0.5 0.2 0.1 10-1 0.05 t1 0.02 0.01 SINGLE PULSE 10 -2 10-5 PD DUTY FACTOR, D = t1 / t2 t2 PEAK TJ = PD x ZJC x RJC + TC 10-4 10-3 10-2 10 -1 100 101 t1 , RECTANGULAR PULSE DURATION (s) FIGURE 16. NORMALIZED TRANSIENT THERMAL RESPONSE, JUNCTION TO CASE HGTP12N60B3D 90% 10% VGE EON2 L = 1mH EOFF VCE RG = 25 90% + - VDD = 480V ICE 10% td(OFF)I tfI trI td(ON)I FIGURE 17. INDUCTIVE SWITCHING TEST CIRCUIT (c)2002 Fairchild Semiconductor Corporation FIGURE 18. SWITCHING TEST WAVEFORMS HGTG12N60B3, HGTP12N60B3, HGT1S12N60B3S Rev. C HGTG12N60B3, HGTP12N60B3, HGT1S12N60B3S Handling Precautions for IGBTs Operating Frequency Information Insulated Gate Bipolar Transistors are susceptible to gate-insulation damage by the electrostatic discharge of energy through the devices. When handling these devices, care should be exercised to assure that the static charge built in the handler's body capacitance is not discharged through the device. With proper handling and application procedures, however, IGBTs are currently being extensively used in production by numerous equipment manufacturers in military, industrial and consumer applications, with virtually no damage problems due to electrostatic discharge. IGBTs can be handled safely if the following basic precautions are taken: Operating frequency information for a typical device (Figure 3) is presented as a guide for estimating device performance for a specific application. Other typical frequency vs collector current (ICE) plots are possible using the information shown for a typical unit in Figures 5, 6, 7, 8, 9 and 11. The operating frequency plot (Figure 3) of a typical device shows fMAX1 or fMAX2 ; whichever is smaller at each point. The information is based on measurements of a typical device and is bounded by the maximum rated junction temperature. 1. Prior to assembly into a circuit, all leads should be kept shorted together either by the use of metal shorting springs or by the insertion into conductive material such as "ECCOSORBDTM LD26" or equivalent. 2. When devices are removed by hand from their carriers, the hand being used should be grounded by any suitable means - for example, with a metallic wristband. 3. Tips of soldering irons should be grounded. 4. Devices should never be inserted into or removed from circuits with power on. 5. Gate Voltage Rating - Never exceed the gate-voltage rating of VGEM . Exceeding the rated VGE can result in permanent damage to the oxide layer in the gate region. 6. Gate Termination - The gates of these devices are essentially capacitors. Circuits that leave the gate open-circuited or floating should be avoided. These conditions can result in turn-on of the device due to voltage buildup on the input capacitor due to leakage currents or pickup. 7. Gate Protection - These devices do not have an internal monolithic Zener diode from gate to emitter. If gate protection is required an external Zener is recommended. (c)2002 Fairchild Semiconductor Corporation fMAX1 is defined by fMAX1 = 0.05/(td(OFF)I+ td(ON)I). Deadtime (the denominator) has been arbitrarily held to 10% of the on-state time for a 50% duty factor. Other definitions are possible. td(OFF)I and td(ON)I are defined in Figure 18. Device turn-off delay can establish an additional frequency limiting condition for an application other than TJM . td(OFF)I is important when controlling output ripple under a lightly loaded condition. fMAX2 is defined by fMAX2 = (PD - PC )/(EOFF + EON2). The allowable dissipation (PD) is defined by PD = (TJM - TC)/RJC . The sum of device switching and conduction losses must not exceed PD . A 50% duty factor was used (Figure 3) and the conduction losses (P C) are approximated by PC = (VCE x ICE)/2. EON2 and E OFF are defined in the switching waveforms shown in Figure 18. E ON2 is the integral of the instantaneous power loss (ICE x VCE) during turn-on and EOFF is the integral of the instantaneous power loss (ICE x VCE) during turn-off. All tail losses are included in the calculation for EOFF ; i.e., the collector current equals zero (ICE = 0). HGTG12N60B3, HGTP12N60B3, HGT1S12N60B3S Rev. C TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx Bottomless CoolFET CROSSVOLT DenseTrench DOME EcoSPARK E2CMOSTM EnSignaTM FACT FACT Quiet Series FAST a FASTr FRFET GlobalOptoisolator GTO HiSeC I2C ISOPLANAR LittleFET MicroFET MicroPak MICROWIRE OPTOLOGIC a OPTOPLANAR PACMAN POP Power247 PowerTrench a QFET QS QT Optoelectronics Quiet Series SILENT SWITCHER a UHC SMART START UltraFET a SPM VCX STAR*POWER Stealth SuperSOT-3 SuperSOT-6 SuperSOT-8 SyncFET TinyLogic TruTranslation STAR*POWER is used under license DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILDS PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 2. A critical component is any component of a life 1. Life support devices or systems are devices or support device or system whose failure to perform can systems which, (a) are intended for surgical implant into be reasonably expected to cause the failure of the life the body, or (b) support or sustain life, or (c) whose support device or system, or to affect its safety or failure to perform when properly used in accordance with instructions for use provided in the labeling, can be effectiveness. reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. H5