GB50MPS17-247 1700 V SiC MPSTM Diode Silicon Carbide Schottky Diode Features VRRM IF (Tc = 135C) QC = = = 1700 V 108 A 206 nC Package * High Avalanche (UIS) Capability * Enhanced Surge Current Capability * Superior Figure of Merit QC/IF * Low Thermal Resistance * 175 C Maximum Operating Temperature * Temperature Independent Switching Behavior * Positive Temperature Coefficient of VF * Extremely Fast Switching Speeds 2 1 TO-247-2L Advantages Applications * Low Standby Power Losses * Improved Circuit Efficiency (Lower Overall Cost) * Low Switching Losses * Ease of Paralleling without Thermal Runaway * Smaller Heat Sink Requirements * Low Reverse Recovery Current * Low Device Capacitance * Low Reverse Leakage Current * Wind Energy Converters * Solar Inverters * Motor Drives * Freewheeling / Anti-parallel Diode in Inverters * AC-DC and DC-DC Power Converters * Switched Mode Power Supply (SMPS) * Uninterruptible Power Supply (UPS) * Pulsed Power Absolute Maximum Ratings (At TC = 25 C Unless Otherwise Stated) Parameter Symbol Repetitive Peak Reverse Voltage Conditions VRRM Continuous Forward Current IF Non-Repetitive Peak Forward Surge Current, Half Sine Wave IF,SM Repetitive Peak Forward Surge Current, Half Sine Wave IF,RM Non-Repetitive Peak Forward Surge Current IF,max 2 2 Values Unit 1700 V TC = 25 C, D = 1 216 A TC = 135 C, D = 1 108 TC = 165 C, D = 1 50 TC = 25 C, tP = 10 ms 230 TC = 150 C, tP = 10 ms 177 TC = 25 C, tP = 10 ms 110 TC = 150 C, tP = 10 ms 74 TC = 25 C, tP = 10 s 1350 A A A i t Value i dt TC = 25 C, tP = 10 ms 264 A 2s Non-Repetitive Avalanche Energy EAS L = 0.3 mH, IAS = 50 A 360 mJ dV/dt VR = 0 ~ 960 V 100 V/ns Ptot TC = 25 C Diode Ruggedness Power Dissipation Operating and Storage Temperature Sep 2018 Rev1.1 Tj , Tstg www.genesicsemi.com/schottky_mps/GB50MPS17-247.pdf 1625 W -55 to 175 C Page 1 of 7 GB50MPS17-247 1700 V SiC MPSTM Diode Electrical Characteristics Parameter Symbol Diode Forward Voltage VF Reverse Current IR Total Capacitive Charge QC Switching Time ts Total Capacitance C Conditions Values Min. Typ. Max. IF = 50 A, Tj = 25 C 1.5 1.8 IF = 50 A, Tj = 175 C 2.3 2.7 VR = 1700 V, Tj = 25 C 10 60 VR = 1700 V, Tj = 175 C 258 1677 IF IF,MAX dIF/dt = 200 A/s Tj = 175 C VR = 600 V 142 VR = 1200 V 206 VR = 600 V VR = 1200 V < 10 VR = 1 V, f = 1 MHz, Tj = 25C 3193 VR = 1700 V, f = 1 MHz, Tj = 25C 146 Unit V A nC ns pF Thermal / Mechanical Characteristics Thermal Resistance, Junction - Case RthJC 0.08 C/W Weight WT 6 g Mounting Torque TM 1.1 Nm Sep 2018 Rev1.1 www.genesicsemi.com/schottky_mps/GB50MPS17-247.pdf Page 2 of 7 GB50MPS17-247 1700 V SiC MPSTM Diode IF = f(VF,Tj); tP = 10 s Figure 1: Typical Forward Characteristics IR = f(VR,Tj) Ptot = f(TC) Figure 2: Typical Reverse Characteristics Figure 3: Power Derating Curve Sep 2018 Rev1.1 www.genesicsemi.com/schottky_mps/GB50MPS17-247.pdf Page 3 of 7 GB50MPS17-247 1700 V SiC MPSTM Diode IF = f(TC); D = tP/T, tP= 10 s C = f(VR); Tj = 25 C; f = 1 MHz Figure 4: Current Derating Curves Figure 5: Typical Junction Capacitance vs Reverse Voltage Characteristics Qc = f(VR); Tj = 25 C; f = 1 MHz EC = f(VR); Tj = 25 C; f = 1 MHz Figure 6: Typical Capacitive Charge vs Reverse Voltage Characteristics Figure 7: Typical Capacitive Energy vs Reverse Voltage Characteristics Sep 2018 Rev1.1 www.genesicsemi.com/schottky_mps/GB50MPS17-247.pdf Page 4 of 7 GB50MPS17-247 1700 V SiC MPSTM Diode Zth,jc = f(tP,D); D = tP/T Figure 8: Transient Thermal Impedance IF = (VF - VBI)/RDIFF (A) Built-In Voltage (VBI): VBI(Tj) = m*Tj + n (V) m = -1.93e-03, n = 0.86 Differential Resistance (RDIFF): RDIFF(Tj) = a*Tj2 + b*Tj + c (); a = 4.05e-07, b = 4.88e-05, c = 0.0116 IF = f(VF, Tj) Figure 9: Forward Curve Model Sep 2018 Rev1.1 www.genesicsemi.com/schottky_mps/GB50MPS17-247.pdf Page 5 of 7 GB50MPS17-247 1700 V SiC MPSTM Diode Package Dimensions TO-247-2L Package Outline Recommended Solder Pad Layout NOTE 1. CONTROLLED DIMENSION IS INCH. DIMENSION IN BRACKET IS MILLIMETER. 2. DIMENSIONS DO NOT INCLUDE END FLASH, MOLD FLASH, MATERIAL PROTRUSIONS Sep 2018 Rev1.1 www.genesicsemi.com/schottky_mps/GB50MPS17-247.pdf Page 6 of 7 GB50MPS17-247 1700 V SiC MPSTM Diode RoHS Compliance The levels of RoHS restricted materials in this product are below the maximum concentration values (also referred to as the threshold limits) permitted for such substances, or are used in an exempted application, in accordance with EU Directive 2011/65/EC (RoHS2), as implemented November 15, 2017. RoHS Declarations for this product can be obtained from your GeneSiC representative. REACh Compliance REACh substances of high concern (SVHCs) information is available for this product. Since the European Chemical Agency (ECHA) has published notice of their intent to frequently revise the SVHC listing for the foreseeable future, please contact a GeneSiC representative to insure you get the most up-to-date REACh SVHC Declaration. REACh banned substance information (REACh Article 67) is also available upon request. This product has not been designed or tested for use in, and is not intended for use in, applications implanted into the human body nor in applications in which failure of the product could lead to death, personal injury or property damage, including but not limited to equipment used in the operation of nuclear facilities, life-support machines, cardiac defibrillators or similar emergency medical equipment, aircraft navigation or communication or control systems, or air traffic control systems. GeneSiC Semiconductor disclaims all and any warranty and liability arising out of use or application of any product. No license, express or implied to any intellectual property rights is granted by this document. Related Links * * * Soldering Document: http://www.genesicsemi.com/quality/quality-manual/ Tin-whisker Report: http://www.genesicsemi.com/quality/compliance/ Reliability Report: http://www.genesicsemi.com/quality/reliability/ Copyright (c) 2018 GeneSiC Semiconductor Inc. All Rights Reserved The information in this document is subject to change without notice Sep 2018 Rev1.1 Published by GeneSiC Semiconductor, Inc. 43670 Trade Center Place Suite 155 Dulles, VA 20166 Page 7 of 7