TIC236 SERIES
SILICON TRIACS
1
DECEMBER 1971 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
High Current Triacs
12 A RMS
Glass Passivated Wafer
400 V to 800 V Off-State Voltage
Max IGT of 50 mA (Quadrants 1 - 3)
absolute maximum ratings over operating case temperature (unless otherwise noted)
NOTES: 1. These values apply bidirectionally for any value of resistance between the gate and Main Terminal 1.
2. This value applies for 50-Hz full-sine-wave operation with resistive load. Above 70°C derate linearly to 110°C case temperature at
the rate of 300 mA/°C.
3. This value applies for one 50-Hz full-sine-wave when the device is operating at (or below) the rated value of peak reverse volta ge
and on-state current. Surge may be repeated after the device has returned to original thermal equilibrium.
RATING SYMBOL VALUE UNIT
Repetitive peak off-state voltage (see Note 1)
TIC236D
TIC236M
TIC236S
TIC236N
VDRM
400
600
700
800
V
Full-cycle RMS on-state current at (or below) 70°C case temperature (see Note 2) IT(RMS) 12 A
Peak on-state surge current full-sine-wave at (or below) 25°C case temperature (see Note 3) ITSM 100 A
Peak gate current IGM ±1 A
Operating case temperature range TC-40 to +110 °C
Storage temperature range Tstg -40 to +125 °C
Lead temperature 1.6 mm from case for 10 seconds TL230 °C
electrical characteristics at 25°C case temperature (unless otherwise noted )
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
IDRM
Repetitive peak
off-state current VD = Rated VDRMIG = 0 TC = 110°C ±2 mA
IGT
Gate trigger
current
Vsupply = +12 V†
Vsupply = +12 V†
Vsupply = -12 V†
Vsupply = -12 V†
RL = 10 Ω
RL = 10 Ω
RL = 10 Ω
RL = 10 Ω
tp(g) > 20 μs
tp(g) > 20 μs
tp(g) > 20 μs
tp(g) > 20 μs
12
-19
-16
34
50
-50
-50 mA
VGT
Gate trigger
voltage
Vsupply = +12 V†
Vsupply = +12 V†
Vsupply = -12 V†
Vsupply = -12 V†
RL = 10 Ω
RL = 10 Ω
RL = 10 Ω
RL = 10 Ω
tp(g) > 20 μs
tp(g) > 20 μs
tp(g) > 20 μs
tp(g) > 20 μs
0.8
-0.8
-0.8
0.9
2
-2
-2
2
V
VTOn-state voltage ITM = ±17 A IG = 50 mA (see Note 4) ±1.4 ±2.1 V
† All voltages are with respect to Main Terminal 1.
NOTE 4: This parameter must be measured using pulse techniques, tp = ≤ 1 ms, duty cycle ≤ 2 %. Voltage-sensing contacts separate from
the current carrying contacts are located within 3.2 mm from the device body.
MT1
MT2
G
TO-220 PACKAGE
(TOP VIEW)
Pin 2 is in electrical contact with the mounting base.
MDC2ACA
1
2
3
This series is currently available,
but not recommended for new
designs.
TIC236 SERIES
SILICON TRIACS
2
DECEMBER 1971 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
† All voltages are with respect to Main Terminal 1.
NOTE 5: The triacs are triggered by a 15-V (open-circuit amplitude) pulse supplied by a generator with the following characteristics:
RG = 100 Ω, tp(g) = 20 µs, tr = ≤ 15 ns, f = 1 kHz.
IHHolding current Vsupply = +12 V†
Vsupply = -12 V†
IG = 0
IG = 0
Init’ ITM = 100 mA
Init’ ITM = -100 mA
22
-12
40
-40 mA
ILLatching current Vsupply = +12 V†
Vsupply = -12 V† (see Note 5) 80
-80 mA
dv/dt Critical rate of rise of
off-state voltage VD = Rated VDIG = 0 TC = 110°C ±400 V/µs
dv/dt(c)
Critical rise of
commutation voltage
VD = Rated VD
di/dt = 0.5 IT(RMS)/ms
TC = 80°C
IT = 1.4 IT(RMS)
±1.2 ±9 V/µs
di/dt Critical rate of rise of
on -state current
VD = Rated VD
diG/dt = 50 mA/µsIGT = 50 mA TC = 110°C ±100 A/µs
thermal characteristics
PARAMETER MIN TYP MAX UNIT
RθJC Junction to case thermal resistance 2°C/W
RθJA Junction to free air thermal resistance 62.5 °C/W
electrical characteristics at 25°C case temperature (unless otherwise noted) (continued)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
TYPICAL CHARACTERISTICS
Figure 1. Figure 2.
GATE TRIGGER CURRENT
TC - Case Temperature - °C
-60 -40 -20 0 20 40 60 80 100 120
IGT - Gate Trigger Current - mA
0·1
1
10
100
1000 TC08AA
CASE TEMPERATURE
vs
Vsupply IGTM
+ +
+ -
- -
- +
VAA = ± 12 V
RL = 10 Ω
tp(g) = 20 µs
GATE TRIGGER VOLTAGE
TC - Case Temperature - °C
-60 -40 -20 0 20 40 60 80 100 120
VGT - Gate Trigger Voltage - V
0·1
1
10 TC08AB
CASE TEMPERATURE
vs
VAA = ± 12 V
RL = 10 Ω
tp(g) = 20 µs
Vsupply IGTM
+ +
+ -
- -
- +
}
TIC236 SERIES
SILICON TRIACS
3
DECEMBER 1971 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
TYPICAL CHARACTERISTICS
Figure 3. Figure 4.
HOLDING CURRENT
TC - Case Temperature - °C
-60 -40 -20 0 20 40 60 80 100 120
IH - Holding Current - mA
0.1
1
10
100 TC08AD
CASE TEMPERATURE
vs
VAA = ± 12 V
IG = 0
Initiating ITM = 100 mA
Vsupply
+
-
LATCHING CURRENT
TC - Case Temperature - °C
-60 -40 -20 0 20 40 60 80 100 120
IL - Latching Current - mA
1
10
100
1000 TC08AE
CASE TEMPERATURE
vs
VAA = ± 12 V
Vsupply IGTM
+ +
+ -
- -
- +
