Semiconductor Components Industries, LLC, 2001
May, 2001 – Rev. 2 1Publication Order Number:
MBR2545CTP/D
MBR2545CTP
SWITCHMODE
Power Rectifier
. . . using the Schottky Barrier principle with a platinum barrier
metal. These state–of–the–art devices have the following features:
Guardring for Stress Protection
Low Forward Voltage
150°C Operating Junction Temperature
Mechanical Characteristics:
Case: Epoxy, Molded
Weight: 1.9 grams (approximately)
Finish: All External Surfaces Corrosion Resistant and Terminal
Leads are Readily Solderable
Lead Temperature for Soldering Purposes:
260°C Max. for 10 Seconds
Shipped 50 units per plastic tube
Marking: B2545P
MAXIMUM RATINGS
Rating Symbol Value Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
VRRM
VRWM
VR
45 V
Average Rectified Forward Current
(Rated VR, TC = 130°C) IF(AV) 30 A
Peak Repetitive Forward Current
(Rated VR, Square Wave, 20 kHz,
TC = 130°C) Per Diode Leg
IFRM 30 A
Non–Repetitive Peak Surge Current
(Surge Applied at Rated Load
Conditions Halfwave, Single
Phase, 60 Hz) Per Diode Leg
IFSM 150 A
Peak Repetitive Reverse Surge
Current (2.0 s, 1.0 kHz) IRRM 1.0 A
Storage Temperature Range Tstg –65 to +175 °C
Operating Junction Temperature TJ–65 to +150 °C
Voltage Rate of Change (Rated VR) dv/dt 10,000 V/s
Device Package Shipping
ORDERING INFORMATION
MBR2545CTP TO–220
http://onsemi.com
CASE 221A
TO–220AB
PLASTIC
50 Units/Rail
3
4
1
SCHOTTKY BARRIER
RECTIFIER
30 AMPERES
45 VOLTS
1
3
2, 4
2
MARKING DIAGRAM
YY WW
B2545P
AKA
YY = Year
WW = Work Week
B2545P= Device Code
AKA = Diode Polarity
MBR2545CTP
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2
THERMAL CHARACTERISTICS (Per Diode Leg)
Characteristic Symbol Value Unit
Maximum Thermal Resistance, Junction to Case RθJC 2.0 °C/W
ELECTRICAL CHARACTERISTICS (Per Diode Leg)
Maximum Instantaneous Forward Voltage (Note 1.)
(iF = 30 Amps, TC = 125°C)
(iF = 30 Amps, TC = 25°C)
vF0.73
0.82
Volts
Maximum Instantaneous Reverse Current (Note 1.)
(Rated dc Voltage, TC = 125°C)
(Rated dc Voltage, TC = 25°C)
iR40
0.2
mA
1. Pulse Test: Pulse Width = 300 µs, Duty Cycle 2.0%
Figure 1. Maximum Forward Voltage
VF, INSTANTANEOUS FORWARD VOLTAGE (VOLTS)
100
10
1
0.50.40.30.1
Figure 2. Typical Forward Voltage
0.1
iF, INSTANTANEOUS FORWARD CURRENT (A)
0.80.70.6 0.9 VF, INSTANTANEOUS FORWARD VOLTAGE (VOLTS)
10
1
0.50.40.30.1
0.1
iF, INSTANTANEOUS FORWARD CURRENT (A)
0.80.70.6 0.9
100
0.2
Figure 3. Typical Reverse Current
VR, REVERSE VOLTAGE (VOLTS)
0.01
0.001
0.0001
151050
Figure 4. Typical Capacitance
302520 454035 VR, REVERSE VOLTAGE (VOLTS)
400
200
2015100
0353025 50550
IR, REVERSE CURRENT (A)
0.00001
0.000001 4540
800
600
1000
1400
1200
C, CAPACITANCE (pF)
125°C25°C
75°C125°C25°C
75°C
125°C
25°C
75°C
0.2
MBR2545CTP
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3
Figure 5. Current Derating, Case, Per Diode
TC, CASE TEMPERATURE (°C)
25
15
135115
Figure 6. Forward Power Dissipation, Per Diode
145140 150 IF(AV), AVERAGE FORWARD CURRENT (AMPS)
2
50
010 25
14
155 15
4
10
6
10
5
0
IF(AV), AVERAGE FORWARD CURRENT (A)
RATED
VOLTAGE
APPLIED
dc
SQUARE WAVE
PF(AV), AVERAGE FORWARD
POWER DISSIPATION (W)
dc
SQUARE WAVE
20
20
8
12
130125120
MBR2545CTP
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4
PACKAGE DIMENSIONS
TO–220 THREE–LEAD
TO–220AB
CASE 221A–09
ISSUE AA
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION Z DEFINES A ZONE WHERE ALL
BODY AND LEAD IRREGULARITIES ARE
ALLOWED.
DIM MIN MAX MIN MAX
MILLIMETERSINCHES
A0.570 0.620 14.48 15.75
B0.380 0.405 9.66 10.28
C0.160 0.190 4.07 4.82
D0.025 0.035 0.64 0.88
F0.142 0.147 3.61 3.73
G0.095 0.105 2.42 2.66
H0.110 0.155 2.80 3.93
J0.018 0.025 0.46 0.64
K0.500 0.562 12.70 14.27
L0.045 0.060 1.15 1.52
N0.190 0.210 4.83 5.33
Q0.100 0.120 2.54 3.04
R0.080 0.110 2.04 2.79
S0.045 0.055 1.15 1.39
T0.235 0.255 5.97 6.47
U0.000 0.050 0.00 1.27
V0.045 --- 1.15 ---
Z--- 0.080 --- 2.04
B
Q
H
Z
L
V
G
N
A
K
F
123
4
D
SEATING
PLANE
–T–
C
S
T
U
R
J
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MBR2545CTP/D
SWITCHMODE is a trademark of Semiconductor Components Industries, LLC.
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