P6SMB Series Vishay Semiconductors formerly General Semiconductor Surface Mount TRANSZORB(R) Transient Voltage Suppressors Cathode Band DO-214AA (SMB J-Bend) 0.155 (3.94) 0.130 (3.30) 0.086 (2.20) 0.077 (1.95) 0.180 (4.57) 0.160 (4.06) ed e* d n Extee Rang g a t l Vo Mounting Pad Layout 0.012 (0.305) 0.006 (0.152) 0.096 (2.44) 0.084 (2.13) 0.220 (5.59) 0.205 (5.21) 0.106 MAX (2.69 MAX) 0.083 MIN (2.10 MIN) Dimensions in inches and (millimeters) 0.060 (1.52) 0.030 (0.76) V(BR) Unidirectional 6.8 to 540V V(BR) Bidirectional 6.8 to 220V Peak Pulse Power 600W 0.050 MIN (1.27 MIN) 0.220 REF 0.008 (0.203) Max. Mechanical Data Features Case: JEDEC DO-214AA (SMB) molded plastic over passivated junction Terminals: Solder plated, solderable per MIL-STD-750, Method 2026. High temperature soldering guaranteed: 250C/10 seconds at terminals. Polarity: For uni-directional types the band denotes the cathode, which is positive with respect to the anode under normal TVS operation. Standard Packaging: 12mm tape (EIA STD RS-481) Weight: 0.003oz., 0.093g Packaging Codes - Options (Antistatic): 51 - 2K per Bulk box, 20K/carton 52 - 750 per 7" plastic Reel (12mm tape), 15K/carton 5B - 3.2K per 13" plastic Reel (12mm tape), 32K/carton * Plastic package has Underwriters Laboratory Flammability Classification 94V-0 * Low profile package with built-in strain relief for surface mounted applications * Glass passivated junction * Low incremental surge resistance * 600W peak pulse power capability with a 10/1000s waveform, repetition rate (duty cycle): 0.01% * Excellent clamping capability * Very fast response time * Voltages above 220V available Q3-2002 Devices for Bidirectional Applications For bi-directional devices, use suffix CA (e.g. P6SMB10CA). Electrical characteristics apply in both directions. Maximum Ratings & Thermal Characteristics Ratings at 25C ambient temperature unless otherwise specified. Parameter (1)(2) Peak power dissipation with a 10/1000s waveform (Fig. 1) (1) Peak pulse current with a 10/1000s waveform Symbol Value Unit PPPM Minimum 600 W IPPM See Next Table A PM(AV) 5.0 W IFSM 100 A TJ, TSTG -65 to +150 C Thermal resistance junction to ambient air RJA 100 C/W Thermal resistance junction to leads RJL 20 C/W TJ, TSTG -65 to +150 C Power dissipation on infinite heatsink, TA = 50C Peak forward surge current 8.3ms single half sine-wave uni-directional only (2) Operating junction and storage temperature range (3) Operating junction and storage temperature range Notes: (1) Non-repetitive current pulse, per Fig.3 and derated above TA = 25C per Fig. 2. (2) Mounted on 0.2 x 0.2" (5.0 x 5.0mm) copper pads to each terminal (3) Mounted on minimum recommended pad layout Document Number 88370 18-Jul-02 www.vishay.com 1 P6SMB Series Vishay Semiconductors formerly General Semiconductor Electrical Characteristics Ratings at 25C ambient temperature unless otherwise specified. V F General Semiconductor Part Number P6SMB6.8A P6SMB7.5A P6SMB8.2A P6SMB9.1A P6SMB10A P6SMB11A P6SMB12A P6SMB13A P6SMB15A P6SMB16A P6SMB18A P6SMB20A P6SMB22A P6SMB24A P6SMB27A P6SMB30A P6SMB33A P6SMB36A P6SMB39A P6SMB43A P6SMB47A P6SMB51A P6SMB56A P6SMB62A P6SMB68A P6SMB75A P6SMB82A P6SMB91A P6SMB100A P6SMB110A P6SMB120A P6SMB130A P6SMB150A P6SMB160A P6SMB170A P6SMB180A P6SMB200A P6SMB220A P6SMB250A P6SMB300A P6SMB350A P6SMB400A P6SMB440A P6SMB480A P6SMB510A P6SMB540A Notes: (1) (2) (3) (4) Device Marking Code Breakdown Voltage V(BR) at IT (1) (V) UNI BI Min Max Test Current IT (mA) 6V8A 7V5A 8V2A 9V1A 10A 11A 12A 13A 15A 16A 18A 20A 22A 24A 27A 30A 33A 36A 39A 43A 47A 51A 56A 62A 68A 75A 82A 91A 100A 110A 120A 130A 150A 160A 170A 180A 200A 220A 250A 300A 350A 400A 440A 480A 510A 540A 6V8C 7V5C 8V2C 9V1C 10C 11C 12C 13C 15C 16C 18C 20C 22C 24C 27C 30C 33C 36C 39C 43C 47C 51C 56C 62C 68C 75C 82C 91C 100C 110C 120C 130C 150C 160C 170C 180C 200C 220C -- -- -- -- -- -- -- -- 6.45 7.13 7.79 8.65 9.50 10.5 11.4 12.4 14.3 15.2 17.1 19.0 20.9 22.8 25.7 28.5 31.4 34.2 37.1 40.9 44.7 48.5 53.2 58.9 64.6 71.3 77.9 86.5 95.0 105 114 124 143 152 162 171 190 209 237 285 333 380 418 456 485 513 7.14 7.88 8.61 9.55 10.5 11.6 12.6 13.7 15.8 16.8 18.9 21.0 23.1 25.2 28.4 31.5 34.7 37.8 41.0 45.2 49.4 53.6 58.8 65.1 71.4 78.8 86.1 95.5 105 116 126 137 158 168 179 189 210 231 263 315 368 420 462 504 535 567 10 10 10 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 Stand-off Voltage VWM (V) Maximum Reverse Leakage at VWM ID(3) (A) 5.80 6.40 7.02 7.78 8.55 9.40 10.2 11.1 12.8 13.6 15.3 17.1 18.8 20.5 23.1 25.6 28.2 30.8 33.3 36.8 40.2 43.6 47.8 53.0 58.1 64.1 70.1 77.8 85.5 94.0 102 111 128 136 145 154 171 185 214 256 300 342 376 408 434 459 1000 500 200 50 10 5.0 5.0 5.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 = 3.5V at IF = 50A (uni-directional only) Maximum Maximum Maximum Peak Pulse Clamping Temp. Current Voltage at Coefficient (2) IPPM IPPM of V(BR) (A) VC (V) (%/C) 57.1 53.1 49.6 44.8 41.4 38.5 35.9 33.0 28.3 26.7 23.8 21.7 19.6 18.1 16.0 14.5 13.1 12.0 11.1 10.1 9.3 8.6 7.8 7.1 6.5 5.8 5.3 4.8 4.4 3.9 3.6 3.4 2.9 2.7 2.6 2.4 2.2 1.8 1.74 1.45 1.24 1.10 1.00 0.91 0.86 0.81 10.5 11.3 12.1 13.4 14.5 15.6 16.7 18.2 21.2 22.5 25.2 27.7 30.6 33.2 37.5 41.4 45.7 49.9 53.9 59.3 64.8 70.1 77.0 85.0 92.0 103 113 125 137 152 165 179 207 219 234 246 274 328 344 414 482 548 602 658 698 740 0.057 0.061 0.065 0.068 0.073 0.075 0.078 0.081 0.084 0.086 0.088 0.090 0.092 0.094 0.096 0.097 0.098 0.099 0.100 0.101 0.101 0.102 0.103 0.104 0.104 0.105 0.105 0.106 0.106 0.107 0.107 0.107 0.108 0.108 0.108 0.108 0.108 0.108 0.110 0.110 0.110 0.110 0.110 0.110 0.110 0.110 Pulse test: tp 50ms Surge current waveform per Fig. 3 and derate per Fig. 2 For bidirectional types with VWM of 10 volts and less, the ID limit is doubled All terms and symbols are consistent with ANSI/IEEE C62.35 www.vishay.com 2 Document Number 88370 18-Jul-02 P6SMB Series Vishay Semiconductors formerly General Semiconductor Ratings and Characteristic Curves (T A = 25C unless otherwise noted) Fig. 2 - Pulse Derating Curve Fig. 1 - Peak Pulse Power Rating Curve Peak Pulse Power (PPP) or Current (IPP) Derating in Percentage, % PPPM -- Peak Pulse Power (kW) 100 10 1 0.2 x 0.2" (0.5 x 0.5mm) Copper Pad Areas 100 75 50 25 0 0.1 0.1s 1.0s 10s 100s 1.0ms 10ms 0 td -- Pulse Width (sec.) Fig. 3 - Pulse Waveform 75 100 TJ = 25C Pulse Width (td) is defined as the point where the peak current decays to 50% of IPPM tr = 10sec. Peak Value IPPM 100 Half Value -- IPP 2 IPPM 50 10/1000sec. Waveform as defined by R.E.A. 1.0 0 3.0 2.0 175 200 1,000 VR, Measured at Stand-Off Voltage, VWM 100 TJ = 25C f = 1.0MHz Vsig = 50mVp-p Uni-Directional Bi-Directional 10 4.0 1 10 100 200 VWM -- Reverse Stand-Off Voltage (V) t -- Time (ms) Fig. 6 - Maximum Non-Repetitive Peak Forward Surge Current Fig. 5 - Typical Transient Thermal Impedance IFSM -- Peak Forward Surge Current (A) 100 10 1.0 0.1 0.001 150 Measured at Zero Bias td 0 125 Fig. 4 - Typical Junction Capacitance 6,000 CJ -- Junction Capacitance (pF) IPPM -- Peak Pulse Current, % IRSM 50 TA -- Ambient Temperature (C) 150 Transient Thermal Impedance (C/W) 25 200 8.3ms Single Half Sine-Wave (JEDEC Method) Unidirectional Only 100 10 0.01 0.1 1 10 tp -- Pulse Duration (sec) Document Number 88370 18-Jul-02 100 1000 1 10 100 Number of Cycles at 60HZ www.vishay.com 3