P6SMB Series
Vishay Semiconductors
for merly General Semiconductor
Document Number 88370 www.vishay.com
18-Jul-02 1
Surface Mount TRANSZORB®
Transient Voltage Suppressors V(BR) Unidirectional
6.8 to 540V
V(BR) Bidirectional
6.8 to 220V
Peak Pulse Power 600W
0.180 (4.57)
0.160 (4.06) 0.012 (0.305)
0.006 (0.152)
0.008
(0.203)
Max.
0.220 (5.59)
0.205 (5.21)
0.060 (1.52)
0.030 (0.76)
0.155 (3.94)
0.130 (3.30)
0.086 (2.20)
0.077 (1.95)
0.096 (2.44)
0.084 (2.13)
Cathode Band
Dimensions in inches
and (millimeters)
DO-214AA
(SMB J-Bend)
Features
Plastic package has Underwriters Laboratory
Flammability Classification 94V-0
Low profile package with built-in strain relief for
surface mounted applications
Glass passivated junction
Low incremental surge resistance
600W peak pulse power capability with a 10/1000µs
wavefor m, repetition rate (duty cycle): 0.01%
Excellent clamping capability
Very fast response time
*Voltages above 220V available Q3-2002
Mechanical Data
Case: JEDEC DO-214AA (SMB) molded plastic over
passivated junction
Terminals: Solder plated, solderable per MIL-STD-750,
Method 2026. High temperature soldering guaranteed:
250°C/10 seconds at terminals.
Polarity: For uni-directional types the band denotes the
cathode, which is positive with respect to the anode
under normal TVS operation.
Standard Packaging: 12mm tape (EIA STD RS-481)
Weight: 0.003oz., 0.093g
Packaging Codes – Options (Antistatic):
51 2K per Bulk box, 20K/carton
52 750 per 7plastic Reel (12mm tape), 15K/car ton
5B 3.2K per 13plastic Reel (12mm tape), 32K/carton
0.106 MAX
(2.69 MAX)
0.050 MIN
(1.27 MIN) 0.220 REF
0.083 MIN
(2.10 MIN)
Mounting Pad Layout
Devices for Bidirectional Applications
For bi-directional devices, use suffix CA (e.g. P6SMB10CA). Electrical characteristics apply in both directions.
Maximum Ratings & Thermal Characteristics Ratings at 25°C ambient temperature unless otherwise specified.
Parameter Symbol Value Unit
Peak power dissipation with a 10/1000µs waveform(1)(2)(Fig. 1) PPPM Minimum 600 W
Peak pulse current with a 10/1000µs waveform(1) IPPM See Next Table A
Power dissipation on infinite heatsink, TA= 50°CP
M(AV) 5.0 W
Peak forward surge current 8.3ms single half sine-wave IFSM 100 A
uni-directional only(2)
Operating junction and storage temperature range TJ, TSTG 65 to +150 °C
Thermal resistance junction to ambient air(3) RθJA 100 °C/W
Thermal resistance junction to leads RθJL 20 °C/W
Operating junction and storage temperature range TJ, TSTG 65 to +150 °C
Notes: (1) Non-repetitive current pulse, per Fig.3 and derated above TA = 25°C per Fig. 2.
(2) Mounted on 0.2 x 0.2(5.0 x 5.0mm) copper pads to each terminal
(3) Mounted on minimum recommended pad layout
Extended
Voltage Range*
P6SMB Series
Vishay Semiconductors
for merly General Semiconductor
www.vishay.com Document Number 88370
218-Jul-02
Electrical Characteristics Ratings at 25°C ambient temperature unless otherwise specified.VF= 3.5V at IF= 50A (uni-directional only)
Breakdown Voltage Maximum Maximum Maximum Maximum
General Device Marking V(BR) at IT(1) Test Stand-off Reverse Peak Pulse Clamping Temp.
Semiconductor Code (V) Current Voltage Leakage Current Voltage at Coefficient
Part Number ITVWM at VWM IPPM(2) IPPM of V(BR)
UNI BI Min Max (mA) (V) ID(3) (µA) (A) VC(V) (%/°C)
P6SMB6.8A 6V8A 6V8C 6.45 7.14 10 5.80 1000 57.1 10.5 0.057
P6SMB7.5A 7V5A 7V5C 7.13 7.88 10 6.40 500 53.1 11.3 0.061
P6SMB8.2A 8V2A 8V2C 7.79 8.61 10 7.02 200 49.6 12.1 0.065
P6SMB9.1A 9V1A 9V1C 8.65 9.55 1.0 7.78 50 44.8 13.4 0.068
P6SMB10A 10A 10C 9.50 10.5 1.0 8.55 10 41.4 14.5 0.073
P6SMB11A 11A 11C 10.5 11.6 1.0 9.40 5.0 38.5 15.6 0.075
P6SMB12A 12A 12C 11.4 12.6 1.0 10.2 5.0 35.9 16.7 0.078
P6SMB13A 13A 13C 12.4 13.7 1.0 11.1 5.0 33.0 18.2 0.081
P6SMB15A 15A 15C 14.3 15.8 1.0 12.8 1.0 28.3 21.2 0.084
P6SMB16A 16A 16C 15.2 16.8 1.0 13.6 1.0 26.7 22.5 0.086
P6SMB18A 18A 18C 17.1 18.9 1.0 15.3 1.0 23.8 25.2 0.088
P6SMB20A 20A 20C 19.0 21.0 1.0 17.1 1.0 21.7 27.7 0.090
P6SMB22A 22A 22C 20.9 23.1 1.0 18.8 1.0 19.6 30.6 0.092
P6SMB24A 24A 24C 22.8 25.2 1.0 20.5 1.0 18.1 33.2 0.094
P6SMB27A 27A 27C 25.7 28.4 1.0 23.1 1.0 16.0 37.5 0.096
P6SMB30A 30A 30C 28.5 31.5 1.0 25.6 1.0 14.5 41.4 0.097
P6SMB33A 33A 33C 31.4 34.7 1.0 28.2 1.0 13.1 45.7 0.098
P6SMB36A 36A 36C 34.2 37.8 1.0 30.8 1.0 12.0 49.9 0.099
P6SMB39A 39A 39C 37.1 41.0 1.0 33.3 1.0 11.1 53.9 0.100
P6SMB43A 43A 43C 40.9 45.2 1.0 36.8 1.0 10.1 59.3 0.101
P6SMB47A 47A 47C 44.7 49.4 1.0 40.2 1.0 9.3 64.8 0.101
P6SMB51A 51A 51C 48.5 53.6 1.0 43.6 1.0 8.6 70.1 0.102
P6SMB56A 56A 56C 53.2 58.8 1.0 47.8 1.0 7.8 77.0 0.103
P6SMB62A 62A 62C 58.9 65.1 1.0 53.0 1.0 7.1 85.0 0.104
P6SMB68A 68A 68C 64.6 71.4 1.0 58.1 1.0 6.5 92.0 0.104
P6SMB75A 75A 75C 71.3 78.8 1.0 64.1 1.0 5.8 103 0.105
P6SMB82A 82A 82C 77.9 86.1 1.0 70.1 1.0 5.3 113 0.105
P6SMB91A 91A 91C 86.5 95.5 1.0 77.8 1.0 4.8 125 0.106
P6SMB100A 100A 100C 95.0 105 1.0 85.5 1.0 4.4 137 0.106
P6SMB110A 110A 110C 105 116 1.0 94.0 1.0 3.9 152 0.107
P6SMB120A 120A 120C 114 126 1.0 102 1.0 3.6 165 0.107
P6SMB130A 130A 130C 124 137 1.0 111 1.0 3.4 179 0.107
P6SMB150A 150A 150C 143 158 1.0 128 1.0 2.9 207 0.108
P6SMB160A 160A 160C 152 168 1.0 136 1.0 2.7 219 0.108
P6SMB170A 170A 170C 162 179 1.0 145 1.0 2.6 234 0.108
P6SMB180A 180A 180C 171 189 1.0 154 1.0 2.4 246 0.108
P6SMB200A 200A 200C 190 210 1.0 171 1.0 2.2 274 0.108
P6SMB220A 220A 220C 209 231 1.0 185 1.0 1.8 328 0.108
P6SMB250A 250A 237 263 1.0 214 1.0 1.74 344 0.110
P6SMB300A 300A 285 315 1.0 256 1.0 1.45 414 0.110
P6SMB350A 350A 333 368 1.0 300 1.0 1.24 482 0.110
P6SMB400A 400A 380 420 1.0 342 1.0 1.10 548 0.110
P6SMB440A 440A 418 462 1.0 376 1.0 1.00 602 0.110
P6SMB480A 480A 456 504 1.0 408 1.0 0.91 658 0.110
P6SMB510A 510A 485 535 1.0 434 1.0 0.86 698 0.110
P6SMB540A 540A 513 567 1.0 459 1.0 0.81 740 0.110
Notes: (1) Pulse test: tp 50ms
(2) Surge current waveform per Fig. 3 and derate per Fig. 2
(3) For bidirectional types with VWM of 10 volts and less, the IDlimit is doubled
(4) All terms and symbols are consistent with ANSI/IEEE C62.35
P6SMB Series
Vishay Semiconductors
for merly General Semiconductor
Document Number 88370 www.vishay.com
18-Jul-02 3
Ratings and
Characteristic Curves(TA= 25°C unless otherwise noted)
0
25
50
75
100
07525 50 100 125 150 175 200
Peak Pulse Power (PPP) or Current (IPP)
Derating in Percentage, %
TA Ambient Temperature (°C)
Fig. 2 Pulse Derating Curve
PPPM Peak Pulse Power (kW)
Fig. 1 P eak Pulse P o wer Rating Curve
0.1
1
10
100
0.1µs 1.0µs10µs
td Pulse Width (sec.)
100µs 1.0ms 10ms
0.2 x 0.2" (0.5 x 0.5mm)
Copper Pad Areas
Fig. 6 Maximum Non-Repetitive Peak
Forward Surge Current
Number of Cycles at 60HZ
10
200
100
110
100
8.3ms Single Half Sine-Wave
(JEDEC Method)
Unidirectional Only
IFSM Peak Forward Surge Current (A)
tp Pulse Duration (sec)
Transient Thermal Impedance (°C/W)
Fig. 5 Typical Transient Thermal
Impedance
0.1
1.0
10
100
0.001 0.01 0.1 1 10 100 1000
0
50
100
150
IPPM Peak Pulse Current, % IRSM
Fig. 3 Pulse W avef orm
TJ = 25°C
Pulse Width (td)
is defined as the point
where the peak current
decays to 50% of IPPM
tr = 10µsec.
Peak Value
IPPM
Half Value IPP
IPPM 2
td
10/1000µsec. Waveform
as defined by R.E.A.
01.0 2.0 3.0 4.0
t Time (ms)
CJ Junction Capacitance (pF)
Fig. 4 Typical Junction Capacitance
10
100
1,000
6,000
101 100 200
VWM Reverse Stand-Off Voltage (V)
TJ = 25°C
f = 1.0MHz
Vsig = 50mVp-p
VR, Measured at
Stand-Off
Voltage, VWM
Measured at
Zero Bias
Uni-Directional
Bi-Directional