CPW2-0650-S010B - Cree, Inc.

Subject to change without notice.

www.cree.com/power

Datasheet: CPW2-0650-S010B Rev. -

CPW2-0650-S010B–Silicon Carbide Schottky Diode Chip

Z-RecTM RectifieR

Features

• 650-Volt Schottky Rectier

• Zero Reverse Recovery

• Zero Forward Recovery

• High-Frequency Operation

• Temperature-Independent Switching Behavior

• Extremely Fast Switching

• Positive Temperature Coefcient on VF

Chip Outline

Maximum Ratings

Symbol Parameter Value Unit Test Conditions Note

VRRM Repetitive Peak Reverse Voltage 650 V

VRSM Surge Peak Reverse Voltage 650 V

VDC DC Blocking Voltage 650 V

IF(AVG) Average Forward Current 10 A TJ=175˚C

IFRM Repetitive Peak Forward Surge Current 67 A TC=25˚C, tP=10 ms, Half Sine Wave, D=0.3 1

IFSM Non-Repetitive Peak Forward Surge Current 250 A TC=25˚C, tP=10 µs, Pulse 1

TJ , Tstg Operating Junction and Storage Temperature -55 to

+175 ˚C

Part Number Anode Cathode Package Marking

CPW2-0650-S010B Al Ni/Ag Sawn on Foil Wafer # on Foil

VRRM = 650 V

IF(AVG) = 10 A

Qc = 25 nC

2CPW2-0650-S010B Rev. -

Electrical Characteristics

Symbol Parameter Typ. Max. Unit Test Conditions Note

VFForward Voltage 1.5

2.0

1.8

2.4 VIF = 10 A TJ=25°C

IF = 10 A TJ=175°C

IRReverse Current 12

220 μA VR = 650 V TJ=25°C

VR = 650 V TJ=175°C

QCTotal Capacitive Charge 25 nC

VR = 650 V, IF = 10 A

di/dt = 500 A/μs

TJ = 25°C

C Total Capacitance

480

VR = 0 V, TJ = 25°C, f = 1 MHz

VR = 200 V, TJ = 25˚C, f = 1 MHz

VR = 400 V, TJ = 25˚C, f = 1 MHz

Note:

1. Assumes θJC Thermal Resistance of 1.1˚C/W or less

Mechanical Parameters

Parameter Typ. Unit

Die Size 1.92 x 1.92 mm

Anode Pad Size 1.65 x 1.65 mm

Anode Pad Opening 1.45 x 1.45 mm

Thickness 377 ± 10% μm

Wafer Size 100 mm

Anode Metalization (Al) 4μm

Cathode Metalization (Ni/Ag) 1.8 μm

Frontside Passivation Polyimide

This product has not been designed or tested for use in, and is not intended for use in, applications implanted into the human body

nor in applications in which failure of the product could lead to death, personal injury or property damage, including but not limited

to equipment used in the operation of nuclear facilities, life-support machines, cardiac debrillators or similar emergency medical

equipment, aircraft navigation or communication or control systems, air trafc control systems, or weapons systems.

Cree logo are registered trademarks and Z-Rec is a trademark of Cree, Inc.

3CPW2-0650-S010B Rev. -

Cree, Inc.

4600 Silicon Drive

Durham, NC 27703

USA Tel: +1.919.313.5300

Fax: +1.919.313.5451

www.cree.com/power

Chip Dimensions

Part Number Anode Cathode Package Marking

CPW2-0650S010B Al Ni/Ag Sawn on Foil Wafer # on Foil

The die-on-tape method of delivering these SiC die may be considered a means of temporary storage only. Due

to an increase in adhesion over time, die stored for an extended period may afx too strongly to the tape. These

die should be stored in a temperature-controlled nitrogen dry box soon after receipt. Cree will further recommend

that all die be removed from tape to a wafe pack, to a similar storage medium, or used in production within 2

– 3 weeks of delivery to assure 100% release of all die without issues.

symbol dimension

mm inch

A 1.92 0.076

B 1.65 0.065