DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3356 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION ORDERING INFORMATION The 2SK3356 is N-channel MOS Field Effect Transistor PART NUMBER PACKAGE 2SK3356 TO-3P designed for high current switching applications. FEATURES * Super low on-state resistance: RDS(on)1 = 8.0 m MAX. (VGS = 10 V, ID = 38 A) (TO-3P) RDS(on)2 = 12 m MAX. (VGS = 4 V, ID = 38 A) * Low Ciss: Ciss = 6300 pF TYP. * Built-in gate protection diode ABSOLUTE MAXIMUM RATINGS (T A = 25C) Drain to Source Voltage VDSS 60 V Gate to Source Voltage VGSS(AC) 20 V ID(DC) 75 A ID(pulse) 300 A Drain Current (DC) Drain Current (pulse) Note1 Total Power Dissipation (TC = 25C) PT1 135 W Total Power Dissipation (TA = 25C) PT2 3.0 W Channel Temperature Tch 150 C Tstg -55 to +150 C IAS 55 A EAS 302 mJ Storage Temperature Single Avalanche Current Single Avalanche Energy Note2 Note2 Notes 1. PW 10 s, Duty cycle 1 % 2. Starting Tch = 25C, VDD = 30 V , RG = 25 , VGS = 20 V 0 V The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all devices/types available in every country. Please check with local NEC representative for availability and additional information. Document No. D14133EJ3V0DS00 (3rd edition) Date Published March 2001 NS CP(K) Printed in Japan The mark shows major revised points. (c) 1999, 2000 2SK3356 ELECTRICAL CHARACTERISTICS (T A = 25C) CHARACTERISTICS SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Zero Gate Voltage Drain Current IDSS VDS = 60 V, VGS = 0 V 10 A Gate Leakage Current IGSS VGS = 20 V, VDS = 0 V 10 A Gate Cut-off Voltage VGS(off) VDS = 10 V, ID = 1 mA 1.5 2.0 2.5 V | yfs | VDS = 10 V, ID = 38 A 35 57 RDS(on)1 VGS = 10 V, ID = 38 A 6.3 8.0 m RDS(on)2 VGS = 4 V, ID = 38 A 8.0 12 m Forward Transfer Admittance Drain to Source On-state Resistance Input Capacitance Ciss Output Capacitance 6300 pF Coss 1000 pF Reverse Transfer Capacitance Crss 490 pF Turn-on Delay Time td(on) 90 ns 1000 ns td(off) 300 ns tf 400 ns 106 nC Rise Time tr Turn-off Delay Time Fall Time VDS = 10 V, VGS = 0 V, f = 1 MHz S ID = 38 A, VGS(on) = 10 V, VDD = 30 V, RG = 10 Total Gate Charge QG Gate to Source Charge QGS 20 nC Gate to Drain Charge QGD 30 nC Body Diode Forward Voltage ID = 75 A , VDD = 48 V, VGS = 10 V VF(S-D) IF = 75 A, VGS = 0 V 1.0 V Reverse Recovery Time trr IF = 75 A, VGS = 0 V, 55 ns Reverse Recovery Charge Qrr di/dt = 100 A/ s 100 nC TEST CIRCUIT 1 AVALANCHE CAPABILITY TEST CIRCUIT 2 SWITCHING TIME D.U.T. RG = 25 D.U.T. L RL PG. 50 VDD VGS = 20 0 V RG PG. VGS VGS Wave Form 0 90 % ID VGS 0 ID Starting Tch = 1 s Duty Cycle 1 % TEST CIRCUIT 3 GATE CHARGE D.U.T. 2 IG = 2 mA RL 50 VDD 10 % 0 10 % Wave Form VDD PG. 90 % BVDSS VDS ID 90 % VDD ID IAS VGS(on) 10 % Data Sheet D14133EJ3V0DS tr td(off) td(on) ton tf toff 2SK3356 TYPICAL CHARACTERISTICS (T A = 25C) DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA TOTAL POWER DISSIPATION vs. CASE TEMPERATURE PT - Total Power Dissipation - W dT - Percentage of Rated Power - % 140 100 80 60 40 20 0 120 100 80 60 40 20 0 0 20 40 60 80 100 120 140 160 0 20 Tch - Channel Temperature - C 40 60 80 100 120 140 160 TC - Case Temperature - C FORWARD BIAS SAFE OPERATING AREA 1000 mi 100 ) on S( Li 10 = S PW 10 0 s V) RD t V G (a =1 0 s 1m s ID(DC) 10 Po DC ms Lim wer ite Dis d sip ati on 10 1 0.1 0.1 TC = 25C Single Pulse 1 10 100 VDS - Drain to Source Voltage - V TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH 1000 rth(t) - Transient Thermal Resistance - C/W ID - Drain Current - A ID(pulse) ted 100 Rth(ch-A) = 41.7 C/W 10 1 Rth(ch-C) = 0.93 C/W 0.1 0.01 10 Single Pulse 100 1m 10 m 100 m 1 10 100 1000 PW - Pulse Width - s Data Sheet D14133EJ3V0DS 3 2SK3356 DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE FORWARD TRANSFER CHARACTERISTICS 1000 Pulsed ID - Drain Current - A 500 10 ID - Drain Current - A 100 TA = -50C 25C 75C 150C 1 400 300 VGS =10 V 200 4V 100 0.1 1 2 3 VDS = 10 V 5 6 4 Pulsed 0 0 VGS - Gate to Source Voltage - V 1 10 ID - Drain Current - A 100 RDS(on) - Drain to Source On-state Resistance - m 0.1 0.1 DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE 20 Pulsed 10 ID = 38 A 0 2 0 30 8 10 12 14 3.0 Pulsed VGS = 4 V 10 10 V 10 100 1000 VDS = 10 V ID = 1 mA 2.5 2.0 1.5 1.0 0.5 0 1 6 GATE CUT-OFF VOLTAGE vs. CHANNEL TEMPERATURE 20 0 4 VGS - Gate to Source Voltage - V DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT VGS(off) - Gate Cut-off Voltage - V | yfs | - Forward Transfer Admittance - S TA = 150C 75C 25C -50C 1 RDS(on) - Drain to Source On-state Resistance - m 4 VDS = 10 V Pulsed 10 4.0 3.0 VDS - Drain to Source Voltage - V FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT 100 2.0 1.0 -50 0 50 100 150 Tch - Channel Temperature - C ID - Drain Current - A Data Sheet D14133EJ3V0DS 16 2SK3356 1000 Pulsed 20 16 VGS = 4 V 10 V 12 8 4 ID = 38 A 0 -50 50 0 100 Pulsed 100 VGS = 10 V 10 0V 1 0.1 0 150 Tch - Channel Temperature - C VSD - Source to Drain Voltage - V CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE SWITCHING CHARACTERISTICS VGS = 0 V f = 1 MHz 10000 Ciss 1000 Coss Crss 100 0.1 1 10 10000 td(on), tr, td(off), tf - Switching Time - ns Ciss, Coss, Crss - Capacitance - pF 100000 100 tr 1000 tf td(off) 100 td(on) 10 0.1 REVERSE RECOVERY TIME vs. DRAIN CURRENT VDS - Drain to Source Voltage - V trr - Reverse Recovery Time - ns 100 di/dt = 100 A/s VGS = 0 V 10 1.0 10 100 DYNAMIC INPUT/OUTPUT CHARACTERISTICS 100 1 0.1 10 1 ID - Drain Current - A VDS - Drain to Source Voltage - V 1000 1.5 1.0 0.5 100 80 60 10 8 VDD = 48 V 30 V 12 V 6 VGS 40 4 20 2 VDS 0 0 20 40 60 ID = 75 A 80 VGS - Gate to Source Voltage - V 24 SOURCE TO DRAIN DIODE FORWARD VOLTAGE ISD - Diode Forward Current - A RDS(on) - Drain to Source On-state Resistance - m DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE 0 100 120 140 160 QG - Gate Charge - nC IF - Drain Current - A Data Sheet D14133EJ3V0DS 5 2SK3356 SINGLE AVALANCHE ENERGY DERATING FACTOR SINGLE AVALANCHE CURRENT vs. INDUCTIVE LOAD 160 100 IAS = 55 A EAS =3 02 m J 10 VDD = 30 V RG = 25 VGS = 20 V 0 V 1 10 100 120 100 80 60 40 20 1m L - Inductive Load - H 6 VDD = 30 V RG = 25 VGS = 20 V 0 V IAS 55 A 140 Energy Derating Factor - % IAS - Single Avalanche Current - A 1000 10 m 0 25 50 75 100 125 150 Starting Tch - Starting Channel Temperature - C Data Sheet D14133EJ3V0DS 2SK3356 PACKAGE DRAWING (Unit: mm) TO-3P (MP-88) 3.20.2 1.0 15.7 MAX. 7.0 4.50.2 20.00.2 6.0 3 2.20.2 5.45 Gate Protection Diode 1.00.2 0.60.1 5.45 Body Diode Gate 19 MIN. 3.00.2 2 EQUIVALENT CIRCUIT 1.5 Drain 4 1 4.7 MAX. Source 2.80.1 1.Gate 2.Drain 3.Source 4.Fin (Drain) Remark The diode connected between the gate and source of the transistor serves as a protector against ESD. When this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage may be applied to this device. Data Sheet D14133EJ3V0DS 7 2SK3356 * The information in this document is current as of March, 2001. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC's data sheets or data books, etc., for the most up-to-date specifications of NEC semiconductor products. Not all products and/or types are available in every country. Please check with an NEC sales representative for availability and additional information. * No part of this document may be copied or reproduced in any form or by any means without prior written consent of NEC. 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