©
1999, 2000
MOS FIELD EFFECT TRANSISTOR
2SK3356
SWITCHING
N-CHANNEL POWER MOS FET
INDUSTRIAL USE
DA TA SHE ET
Document No. D14133EJ3V0DS00 (3rd edition)
Date Published March 2001 NS CP(K)
Printed in Japan
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
The mar k ★ shows major revised points.
DESCRIPTION
The 2SK3356 is N-channel MOS Field Effect Transistor
de signed for high current switching applications.
FEATURES
•Super l ow on-stat e resistance:
RDS(on)1 = 8.0 mΩ MAX. (VGS = 10 V, ID = 38 A)
RDS(on)2 = 12 mΩ MAX. (VGS = 4 V, ID = 38 A)
•Low Ciss: Ciss = 6300 pF TYP.
•Built-in gate protection diode
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage VDSS 60 V
Gate to Source Voltage VGSS(AC) ±20 V
Drain Current (DC) ID(DC) ±75 A
Drain Current (pulse) Note1 ID(pulse) ±300 A
Tota l Power Dissipation (TC = 25°C) PT1 135 W
Tota l Power Dissipation (TA = 25°C) PT2 3.0 W
Channel Temperature Tch 150 °C
Storage Temperature Tstg –55 to +150 °C
Single Avalanche Current Note2 IAS 55 A
Single Avalanche Energy Note2 EAS 302 mJ
Notes 1. PW ≤ 10
µ
s, Duty cycle ≤ 1 %
2. Starting Tch = 25°C, VDD = 30 V, RG = 25 Ω, VGS = 20 V → 0 V
ORDERING INFO RM ATIO N
PART NUMBER PACKAGE
2SK3356 TO-3P
(TO-3P)
Data Sheet D14133EJ3V0DS
2
2SK3356
ELE CTRICAL CHARACT E RISTI CS (TA = 25°C)
CHARACTERISTICS SYMBOL TEST CONDITIONS MI N. TYP. MAX. UNIT
Zero Gate Voltage Drain Current IDSS VDS = 60 V, VGS = 0 V10
µ
A
Gate Leakage Current IGSS VGS = ±20 V, VDS = 0 V±10
µ
A
Gate Cut-off Voltage VGS(off) VDS = 10 V, ID = 1 mA 1.5 2.0 2.5 V
Forward Transfer Admittance | yfs |V
DS = 10 V, ID = 38 A3557S
Drain to Source On-sta te Resista n ce RDS(on)1 VGS = 10 V, ID = 38 A6.38.0mΩ
RDS(on)2 VGS = 4 V, ID = 38 A8.012mΩ
Input Capa citance Ciss VDS = 10 V, VGS = 0 V, f = 1 MHz 6300 pF
Output Capacitance Coss 1000 pF
Reverse Transfer Capacitance Crss 490 pF
Turn-on De l ay Time td(on) ID = 38 A, VGS(on) = 10 V, VDD = 30 V, 90 ns
Rise Time trRG = 10 Ω1000 ns
Turn-of f Delay T ime td(off) 300 ns
Fall Time tf400 ns
Total Gate Charge QGID = 75 A , VDD = 48 V, VGS = 10 V 106 nC
Gate to Source Charge QGS 20 nC
Gate to Drain Cha rge QGD 30 nC
Body Diode Forward Voltage VF(S-D) IF = 75 A, VGS = 0 V1.0V
Rev erse Recovery Time trr IF = 75 A, VGS = 0 V, 55 ns
Rev erse Recove ry Charge Qrr di/dt = 100 A/
µ
s 100 nC
TEST CIRCUIT 1 AVALANCHE CAPABILITY
R
G
= 25 Ω
50 Ω
PG.
L
V
DD
V
GS
= 20 → 0 V
BV
DSS
I
AS
I
D
V
DS
Starting T
ch
V
DD
D.U.T.
TEST CIRCUIT 3 GATE CHARGE
TEST CIRCUIT 2 SWITCHING TIME
PG. R
G
0
V
GS
D.U.T.
R
L
V
DD
τ = 1
s
µ
Duty Cycle ≤ 1 %
V
GS
Wave Form
I
D
Wave Form
V
GS
10 % 90 %
V
GS
(on)
10 %
0
I
D
90 %
90 %
t
d(on)
t
r
t
d(off)
t
f
10 %
τ
I
D
0
t
on
t
off
PG. 50 Ω
D.U.T.
R
L
V
DD
I
G
= 2 mA
Data Sheet D14133EJ3V0DS 3
2SK3356
TYPICAL CHARACTERI S TICS (TA = 25°C)
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
Tch - Channel Temperature -
˚C
dT - Percentage of Rated Power - %
04020 60 100 14080 120 160
100
80
60
40
20
0
TC - Case Temperature - ˚C
PT - Total Power Dissipation - W
008020 40 60 100 140120 160
TOTAL POWER DISSIPATION vs.
CASE TEMPERATURE
20
40
60
80
100
140
120
FORWARD BIAS SAFE OPERATING AREA
1 10 100
ID - Drain Current - A
0.1
V
DS
- Drain to Source Voltage - V
1
10
100
1000
0.1
100
µs
10
ms
1
ms
PW
=
10
µs
I
D(pulse)
I
D(DC)
P o w er Dissipation
Limited
DC
R
DS(on)
Limited
(at V
GS
= 10 V)
TC = 25˚C
Single Pulse
PW - Pulse Width - s
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
rth(t) - Transient Thermal Resistance - ˚C/W
10
0.01
0.1
1
100
1000
1 m 10 m 100 m 1 10 100 1000
Single Pulse
10 100
Rth(ch-C) = 0.93 ˚C/W
µµ
Rth(ch-A) = 41.7 ˚C/W
★
Data Sheet D14133EJ3V0DS
4
2SK3356
FORWARD TRANSFER CHARACTERISTICS
VGS - Gate to Source Voltage - V
ID - Drain Current - A
Pulsed
123456
VDS = 10 V
10
1
0.1
100
1000
TA = −50˚C
25˚C
75˚C
150˚C
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
V
DS
- Drain to Source Voltage - V
I
D
- Drain Current - A
02.0 3.0 4.0
200
500
400
300
1.0 Pulsed
V
GS
=10 V
100 4 V
0
0.1
0.1
1
10
100
1 10 100
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
I
D
- Drain Current - A
| y
fs
| - Forward Transfer Admittance - S
Pulsed
T
A
= 150˚C
75˚C
25˚C
−50˚C
V
DS
= 10 V
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
V
GS
- Gate to Source Voltage - V
R
DS(on)
- Drain to Source On-state Resistance - mΩ
0
024
10
68
Pulsed
20
I
D
= 38 A
10 12 14 16
DRAIN TO SOURCE ON-STATE
RESISTANCE vs. DRAIN CURRENT
I
D
- Drain Current - A
R
DS(on)
- Drain to Source On-state Resistance - mΩ
10
101
20
30
100 1000
Pulsed
0
V
GS
= 4 V
10 V
GATE CUT-OFF VOLTAGE vs.
CHANNEL TEMPERATURE
T
ch
- Channel Temperature - ˚C
V
GS(off)
- Gate Cut-off Voltage - V
0.5
V
DS
= 10 V
I
D
= 1 mA
1.0
1.5
2.0
2.5
3.0
−50 0 50 100 150
0
Data Sheet D14133EJ3V0DS 5
2SK3356
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
T
ch
- Channel Temperature - ˚C
R
DS(on)
- Drain to Source On-state Resistance - mΩ
0−50
4
8
12
050 100 150
I
D
= 38 A
16
20
24
10 V
V
GS
= 4 V
Pulsed
SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
1.0
I
SD
- Diode Forward Current - A
01.5
V
SD
- Source to Drain Voltage - V
0.5
Pulsed
0.1
1
10
100
1000
0 V
V
GS
= 10 V
CAPACITANCE vs. DRAIN TO
SOURCE VOLTAGE
V
DS
- Drain to Source Voltage - V
C
iss
, C
oss
, C
rss
- Capacitance - pF
100
0.1
1000
10000
100000
1 10 100
V
GS
= 0 V
f = 1 MHz
C
oss
C
rss
C
iss
SWITCHING CHARACTERISTICS
I
D
- Drain Current - A
t
d(on)
, t
r
, t
d(off)
, t
f
- Switching Time - ns
100
10 10.1
1000
10000
10 100
t
f
t
r
t
d(on)
t
d(off)
REVERSE RECOVERY TIME vs.
DRAIN CURRENT
I
F
- Drain Current - A
t
rr
- Reverse Recovery Time - ns
di/dt = 100 A/ s
V
GS
= 0 V
1
0.1
10
1.0 10 100
1000
100
µ
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
V
GS
- Gate to Source Voltage - V
Q
G
- Gate Charge - nC
V
DS
- Drain to Source Voltage - V
0040 6020 80 100 120 140 160
20
40
60
80
100
0
2
4
6
8
10
V
GS
V
DD
= 48 V
30 V
12 V
I
D
= 75 A
V
DS
Data Sheet D14133EJ3V0DS
6
2SK3356
SINGLE AVALANCHE CURRENT vs.
INDUCTIVE LOAD
L - Inductive Load - H
IAS - Single Avalanche Current - A
10
100
1000
1
m10
m
VDD = 30
V
RG = 25 Ω
VGS = 20
V
→
0 V
IAS = 55
A
10
µ
100
µ
1
E
AS
=
302
mJ
SINGLE AVALANCHE ENERGY
DERATING FACTOR
Starting Tch - Starting Channel Temperature - ˚C
Energy Derating Factor - %
25 50 75 100
160
140
120
100
80
60
40
20
0
125 150
V
DD
= 30 V
R
G
= 25 Ω
V
GS
= 20 V → 0 V
I
AS
≤ 55 A
Data Sheet D14133EJ3V0DS 7
2SK3356
PACKAGE DRAWING (Unit: mm)
Remark The diode connected between the gate and source of the transistor serves as a protector against ESD. When
this device actually used, an additional protection circuit is externally required if a voltage exceeding the
rated voltage may be applied to this device.
TO-3P (MP-88)
1.Gate
2.Drain
3.Source
4.Fin (Drain)
123
15.7 MAX. 3.2±0.2
4.5±0.2
6.0 1.03.0±0.2 20.0±0.219 MIN.
2.2±0.2
5.45 5.45
1.0±0.2
4
4.7 MAX.
1.5
7.0
2.8±0.10.6±0.1
EQUIVALENT CI RCUIT
Source
Body
Diode
Gate
Protection
Diode
Gate
Drain
2SK3356
M8E 00. 4
The information in this document is current as of March, 2001. The information is subject to change
without notice. For actual design-in, refer to the latest publications of NEC's data sheets or data
books, etc., for the most up-to-date specifications of NEC semiconductor products. Not all products
and/or types are available in every country. Please check with an NEC sales representative for
availability and additional information.
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