PACKAGE DIMENSIONS in miltimeters THYRISTORS O3P2J,03P4J,03P5J 0.47 Ar.m.s. ALL DIFFUSED TYPE SCR POWER MINI MOLD 4.5401 1.640.2 1,540.1 aa G a , N ~ gL LEN Diss Bs 4 4 0.4240.06 | |__ 5 al +0.42+0.06 | 0.42 +0.06 1s 0.47 + 0.06 0.41 +993 3.0 K: Cathode A: Anode G: Gate SOT-89 MAXIMUM RATINGS (Rq= 1 k&) DESCRIPTION The 03P2J, 03P4J and O3P5J are designed for many switching applications, especially in Hybrid Integrated Circuits. FEATURES @ World Standard Miniature Package: SOT-89 @ High Anode to Cathode Voltage : Vorm. Varo = 200 V (03P2J} > Vora. Varo =400 V (03P4J) : Vornm. Varo =500 V (03P5J) APPLICATIONS @ Cassette tape recorder @ Solid-state relay @ Strobo flasher Ground fault detector @ Automobile equipment (TEM SYMBOL 03P2J O3P4J O3P5J UNIT Non-Repetitive Peak Reverse Voltage VRSM 300 500 600 Vv Non-Fepetitive Peak Off-State Voltage Vpsm 300 500 600 Vv Repetitive Peak Reverse Voltage VARM 200 400 500 Vv Repetitive Peak Off-State Voltage VDRM 200 400 500 Vv Average On-State Current ITiav) 0.3 (Ty = 77 C, Single phase half wave) A RMS On-State Current IT(AMS) 0.47 A Surge On-State Current ITSM 6 (f * 50 Hz, 1 cycle) A Fusing Current sitzdt 0.15 (1 ms t < 10 ms) A*s Peak Gate Power Dissipation PGM 0.1 (f > 50 Hz, duty < 10 %) Ww Average Gate Power Dissipation PGIAV} 0.01 Ww Peak Gate Forward Current lFGM 0.1 {f 2 50 Hz, duty < 10 %} A Peak Gate Reverse Voltage VRGM 6 Vv Junction Temperature Tj 55 to +125 c Storage Temperature Tstg 5 to +150 c NEC Corporation 1983 NEC CorporationELECTRICAL CHARACTERISTICS (Tj = 25C, Rex = 1k) ITEM SYMBOL TEST CONDITIONS MIN TYP. MAX, UNIT Repetitive Peak Reverse Current IRRM VrRM = VRAM ae et . = uA Repetitive Peak Off-State Current IpDRM pm =VDRM 2 = 25 oe _ iw uA Critical Rate of Rise of Off-State Voltage dv/dt VpM Bopp. T= 125C ~ 40 _ Vins On-State Voltage VT lt =tA - ~ 1.6 Vv Gate Trigger Current IGT Vom 76 V,R_ = 1002 - - 200 HA Gate Trigger Voltage VGT Vom =6V,R_ 71002 = - 0.8 v Gate Non-Trigger Voltage Veo Vom = 2YDRM. Tj = 128C 0.1 - - v Holding Current Iy Vom = 24V,lrmez1A - ~ 5 mA IM = 200 mA, dit/dt= 15 A/us Commutating Turn-Off Time ty VamMe 25 V. Vom =2VpRM - 25 - HS dv/dt = 20 V/us, Tj = 125C Thermal Resistance Reh(j-a) Junction to Ambient* ~ _ 65 "cw *Mounted on 0.7 mm x 2.5 cm? ceramic substrate Fig. 1 lam Vin CHARACTERISTICS MAX, 103 lym On-State Current -mA nN 19! 0 10 Vrm On-State VoltageV Itsm Surge On-State Current A 30 Fig.2 Itsy RATING Junction tarnperature prior to surge~125 C Cycles Non repetitive ITSMIgyGate Trigger Current - uA VegGate Forward VoltageV igs Trigger Current -mA 1000 106 3 0.1 100 - a 2 - 001 -20 Fig. 3 GATE POWER RATINGS Fig.4 lgg - Vg7 OISTRIBUTION > & s 3 Pom =100 mW . f259 Hz . & duty<10 % 2 a , 2 a 3 o > i-gm100 mA 20 40 60 80 100 120 0 1.0 : 2.0 lpg -Gate Forward Current-mA igg~Trigger CurrentmA Fig. 5 gp ~Ta TYPICAL DISTRIBUTION Fig. 6 VgtT, TYPICAL DISTRIBUTION 7 & & 3S > & = 2 sg & > + 0 20 40 60 80 100 120 20 0 20 40 60 80 100-120 TgAmbient Temperature 'C TgAmbient Temperature C Fig. 7 Igg TG TYPICAL DISTRIBUTION Fig.8 VoTTe TYPICAL DISTRIBUTION Ta-25 ' Ta=25 C GS > i & = Ss 5 bo AJ = 2 CI FE o > 10 100 1000 1 10 100 1000 T%; Trigger Pulse Widthyzs TqTrigger Pulse Width ysFig. 10 Iyjay) Te RATINGS = | 140 S a 120 ae eB | 180 al 8 - 2 100 0.7 mmx2.5 em? g S Mounted on L Ceramic Substrate 2 2 80 Ss -_ a & & 2 60 & < 3 A 0" Aug 40 + 186 | $ a 20 & 100 200 300 400 500 0 100 200 300 400 500 600 ITcAv) Average On-State Current-mA 10 0.1 lyHolding Current mA 0.01 20 0 20 40 60 TgAmbient TemperatureC NEC Corporation INTERNATIONAL ELECTRON DEVICES Div. NEC Building, 33-1, Shibs Gochome Minato-ku, Tokyo 108, Japan Tel: Tokyo 454-1111 Telex Address; NECTOK J22686 Cable Address; MICROPHONE TOKYO SC-1018A OCT.-31-83M Printed in Japan ITcav)~ Average On-State Current -mA Fig. 11 lyy Tg TYPICAL DISTRIBUTION 80 100120