HIGH CURRENT GENERAL
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Document Number 5569
Issue 2
Page 1 of 3
BFX34
• Silicon Epitaxial NPN Transistor
• High Speed, Low Saturation Switch
• Hermetic TO39 Package
• Screening Options Available
ABSOLUTE MAXIMUM RATINGS
(TC = 25°C unless otherwise stated)
VCBO Collector – Base Voltage 120V
VCEO Collector – Emitter Voltage 60V
VEBO Emitter – Base Voltage 6V
IB Continuous Base Current 1.0A
IC Continuous Collector Current 2A
ICM Peak Repetitive Collector Current 5A
PD Total Power Dissipation at TA = 25°C 870mW
TC = 25°C 5W
TJ Junction Temperature Range 200°C
Tstg Storage Temperature Range -65 to +200°C
THERMAL PROPERTIES
Symbols Parameters Max.
Unit
RθJA Thermal Resistance, Junction To Ambient 200 °C/W
RθJC
Thermal Resistance, Junction To Case 35 °C/W