HIGH CURRENT GENERAL
PURPOSE TRANSISTOR
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Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However
Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to
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Semelab Limited
Semelab LimitedSemelab Limited
Semelab Limited
Coventry Road, Lutterworth, Leicestershire, LE17 4JB
Telephone +44 (0) 1455 556565 Fax +44 (0) 1455 552612 Email: sales@semelab-tt.com Website: http://www.semelab-tt.com
Document Number 5569
Issue 2
Page 1 of 3
BFX34
Silicon Epitaxial NPN Transistor
High Speed, Low Saturation Switch
Hermetic TO39 Package
Screening Options Available
ABSOLUTE MAXIMUM RATINGS
(TC = 25°C unless otherwise stated)
VCBO Collector – Base Voltage 120V
VCEO Collector – Emitter Voltage 60V
VEBO Emitter – Base Voltage 6V
IB Continuous Base Current 1.0A
IC Continuous Collector Current 2A
ICM Peak Repetitive Collector Current 5A
PD Total Power Dissipation at TA = 25°C 870mW
TC = 25°C 5W
TJ Junction Temperature Range 200°C
Tstg Storage Temperature Range -65 to +200°C
THERMAL PROPERTIES
Symbols Parameters Max.
Unit
RθJA Thermal Resistance, Junction To Ambient 200 °C/W
RθJC
Thermal Resistance, Junction To Case 35 °C/W
HIGH CURRENT GENERAL
PURPOSE TRANSISTOR
BFX34
Semelab Limited
Semelab LimitedSemelab Limited
Semelab Limited
Coventry Road, Lutterworth, Leicestershire, LE17 4JB
Telephone +44 (0) 1455 556565 Fax +44 (0) 1455 552612 Email: sales@semelab-tt.com Website: http://www.semelab-tt.com
Document Number 5569
Issue 2
Page 2 of 3
ELECTRICAL CHARACTERISTICS
(TA = 25°C unless otherwise stated)
Symbols Parameters Test Conditions Min.
Typ. Max.
Unit
V(BR)CBO
(1)
Collector-Base
Breakdown Voltage IC = 5mA VBE = 0 120
V(BR)CEO
(1)
Collector-Emitter
Breakdown Voltage IC = 10mA IB = 0 60
VEBO
(1)
Emitter - Base Voltage IE = 1.0mA IC = 0 6
VCE(sat)
(1)
Collector-Emitter
Saturation Voltage 0.4 1.0
VBE(sat)
(1)
Base-Emitter
Saturation Voltage
IC = 5A IB = 0.5A
1.3 1.6
V
ICES Collector Cut-Off Current VCE = 60V VBE = 0 0.02 10
IEBO Emitter Cut-Off Current VEB = 4V IC = 0 0.05 10 µA
IC = 1.0A VCE = 2V 100
IC = 1.5A VCE = 0.6V 75
hFE DC Current Gain
IC = 2A VCE = 2V 40 80 150
-
DYNAMIC CHARACTERISTICS
IC = 0.5A VCE = 5V
fT Transition Frequency
f = 20MHz
70 100 MHz
Cobo Output Capacitance VCB = 10V f = 1.0MHz 40 100
Cibo Input Capacitance VEB = 0.5V f = 1.0MHz 300 500
pF
ton Turn on Time VCC = 20V IC = 0.5A 0.6
toff Turn off Time IB1= -IB2 = 50mA 1.2 µS
Notes
NotesNotes
Notes
(1) Pulse Width 300us, δ 2%
HIGH CURRENT GENERAL
PURPOSE TRANSISTOR
BFX34
Semelab Limited
Semelab LimitedSemelab Limited
Semelab Limited
Coventry Road, Lutterworth, Leicestershire, LE17 4JB
Telephone +44 (0) 1455 556565 Fax +44 (0) 1455 552612 Email: sales@semelab-tt.com Website: http://www.semelab-tt.com
Document Number 5569
Issue 2
Page 3 of 3
MECHANICAL DATA
Dimensions in mm (inches)
0.89
(0.035)max.
12.70
(0.500)
min. 0.41 (0.016)
0.53 (0.021)
dia.
5.08 (0.200)
typ.
0.71 (0.028)
0.86 (0.034)
2.54
(0.100)
45°
6.10 (0.240)
6.60 (0.260)
8.51 (0.34)
9.40 (0.37)
7.75 (0.305)
8.51 (0.335)
123
0.74 (0.029)
1.14 (0.045)
TO
39
-
20
5
A
D
) METAL PACKAGE
Underside View
Underside ViewUnderside View
Underside View
PIN 1 - Emitter PIN 2 - Base PIN 3 - Collector