SuperSOT SOT23 NPN SILICON POWER (SWITCHING) TRANSISTORS FMMT617 FMMT618 FMMT619 FMMT624 FMMT625 ISSUE 3 - NOVEMBER 1995 FEATURES * 625mW POWER DISSIPATION * * * * * IC CONT 3A 12A Peak Pulse Current Excellent HFE Characteristics Up To 12A (pulsed) Extremely Low Saturation Voltage E.g. 8mV Typ. Extremely Low Equivalent On Resistance; RCE(sat) E C B DEVICE TYPE COMPLEMENT PARTMARKING RCE(sat) FMMT617 FMMT717 617 50m at 3A FMMT618 FMMT718 618 50m at 2A FMMT619 FMMT720 619 75m at 2A FMMT624 FMMT723 624 - FMMT625 625 - ABSOLUTE MAXIMUM RATINGS. FMMT FMMT FMMT FMMT FMMT 617 618 619 624 625 PARAMETER SYMBOL Collector-Base Voltage VCBO 15 20 50 125 150 V Collector-Emitter Voltage VCEO 15 20 50 125 150 V Emitter-Base Voltage VEBO 5 5 5 5 5 V Peak Pulse Current** ICM 12 6 6 3 3 A Continuous Collector Current IC 3 2.5 2 1 1 A Base Current IB 500 mA Power Dissipation at Tamb=25C* Ptot 625 mW -55 to +150 C Operating and Storage Temperature Tj:Tstg Range UNIT * Maximum power dissipation is calculated assuming that the device is mounted on a ceramic substrate measuring 15x15x0.6mm **Measured under pulsed conditions. Pulse width=300s. Duty cycle 2% Spice parameter data is available upon request for these devices 3 - 149 FMMT618 FMMT619 FMMT618 TYPICAL CHARACTERISTICS ELECTRICAL CHARACTERISTICS (at Tamb = 25C unless otherwise stated). FMMT618 PARAMETER SYMBOL Collector-Base Breakdown Voltage V(BR)CBO Collector-Emitter Breakdown Voltage V(BR)CEO Emitter-Base Breakdown Voltage V(BR)EBO Collector Cut-Off Current ICBO Emitter Cut-Off Current IEBO 100 Collector Emitter Cut-Off Current ICES 100 Collector-Emitter Saturation Voltage VCE(sat) MIN. TYP. 20 100 20 5 50 27 50 8.3 5 TYP. MAX. 190 V 65 V 8.3 1 UNIT CONDITIONS. V IC=100A 0.4 +25 C IC/IB =50 0.3 100m 100C IC=10mA* IE=100A 25C 0.2 10m IC /IB=100 -55C 0.1 IC /IB=50 IC /IB=10 100 8 70 130 Base-Emitter Saturation Voltage FMMT619 MAX. MIN. VBE(sat) Base-Emitter Turn-On Voltage VBE(on) Static Forward Current Transfer Ratio hFE 0.89 0.79 200 300 15 150 200 360 180 100 140 Transition Frequency fT Output Capacitance Cobo 23 Turn-On Time t(on) 170 Turn-Off Time t(off) 400 0.87 1.0 0.80 1.0 400 450 200 100 10 125 150 30 200 300 200 100 400 450 400 225 40 100 165 100 nA nA VCB=16V VCB=40V 100 nA VEB=4V 100 nA nA VCES=16V VCES=40V mV mV mV mV IC=0.1A, IB=10mA* IC=1A, IB=10mA* IC=2A, IB=50mA* IC=2.5A, IB=50mA* 20 200 220 1.0 1.0 V V V V IC=2A, IB=50mA* IC=2.5A, IB=50mA* IC=2A, VCE=2V* IC=2.5A, VCE=2V* IC=10mA, VCE=2V* IC=200mA, VCE=2V* IC=1A, VCE=2V* IC=2A, VCE=2V* IC=6A, VCE=2V* MHz IC=50mA, VCE=10V f=100MHz pF VCB=10V, f=1MHz 170 ns 750 ns VCC=10V, IC=1A IB1=-IB2=10mA 12 20 *Measured under pulsed conditions. Pulse width=300s. Duty cycle 2% 1m 0.0 1m 1.2 10m 100m 1 10 1mA 100mA IC - Collector Current (A) Collector Current VCE(SAT) v IC VCE(SAT) vs IC 1.2 VCE=2V 100C 1.0 450 225 -55C 1A 10A -55C 25C 0.6 0.4 10A IC/IB =50 0.8 0.6 1A 1.0 25C 0.8 10mA 100C 0.4 0.2 0.2 0.0 0 10mA 1mA 100mA 1A 0.0 1mA 10A 10mA Collector Current 100mA Collector Current hFE vs IC VBE(SAT) vs IC 10 SINGLE PULSE TEST Tamb = 25 deg C 1.0 VCE=2V -55C 0.8 1.0 25C 0.6 D.C. 1s 100ms 10ms 1ms 100C 0.4 100s 0.1 0.2 0.0 1mA 3 - 152 10mA 100mA 1A 0.01 10A 0.1 1 10 Collector Current VCE (VOLTS) VBE(ON) vs IC Safe Operating Area 3 - 153 100 FMMT618 FMMT619 FMMT618 TYPICAL CHARACTERISTICS ELECTRICAL CHARACTERISTICS (at Tamb = 25C unless otherwise stated). FMMT618 PARAMETER SYMBOL Collector-Base Breakdown Voltage V(BR)CBO Collector-Emitter Breakdown Voltage V(BR)CEO Emitter-Base Breakdown Voltage V(BR)EBO Collector Cut-Off Current ICBO Emitter Cut-Off Current IEBO 100 Collector Emitter Cut-Off Current ICES 100 Collector-Emitter Saturation Voltage VCE(sat) MIN. TYP. 20 100 20 5 50 27 50 8.3 5 TYP. MAX. 190 V 65 V 8.3 1 UNIT CONDITIONS. V IC=100A 0.4 +25 C IC/IB =50 0.3 100m 100C IC=10mA* IE=100A 25C 0.2 10m IC /IB=100 -55C 0.1 IC /IB=50 IC /IB=10 100 8 70 130 Base-Emitter Saturation Voltage FMMT619 MAX. MIN. VBE(sat) Base-Emitter Turn-On Voltage VBE(on) Static Forward Current Transfer Ratio hFE 0.89 0.79 200 300 15 150 200 360 180 100 140 Transition Frequency fT Output Capacitance Cobo 23 Turn-On Time t(on) 170 Turn-Off Time t(off) 400 0.87 1.0 0.80 1.0 400 450 200 100 10 125 150 30 200 300 200 100 400 450 400 225 40 100 165 100 nA nA VCB=16V VCB=40V 100 nA VEB=4V 100 nA nA VCES=16V VCES=40V mV mV mV mV IC=0.1A, IB=10mA* IC=1A, IB=10mA* IC=2A, IB=50mA* IC=2.5A, IB=50mA* 20 200 220 1.0 1.0 V V V V IC=2A, IB=50mA* IC=2.5A, IB=50mA* IC=2A, VCE=2V* IC=2.5A, VCE=2V* IC=10mA, VCE=2V* IC=200mA, VCE=2V* IC=1A, VCE=2V* IC=2A, VCE=2V* IC=6A, VCE=2V* MHz IC=50mA, VCE=10V f=100MHz pF VCB=10V, f=1MHz 170 ns 750 ns VCC=10V, IC=1A IB1=-IB2=10mA 12 20 *Measured under pulsed conditions. Pulse width=300s. Duty cycle 2% 1m 0.0 1m 1.2 10m 100m 1 10 1mA 100mA IC - Collector Current (A) Collector Current VCE(SAT) v IC VCE(SAT) vs IC 1.2 VCE=2V 100C 1.0 450 225 -55C 1A 10A -55C 25C 0.6 0.4 10A IC/IB =50 0.8 0.6 1A 1.0 25C 0.8 10mA 100C 0.4 0.2 0.2 0.0 0 10mA 1mA 100mA 1A 0.0 1mA 10A 10mA Collector Current 100mA Collector Current hFE vs IC VBE(SAT) vs IC 10 SINGLE PULSE TEST Tamb = 25 deg C 1.0 VCE=2V -55C 0.8 1.0 25C 0.6 D.C. 1s 100ms 10ms 1ms 100C 0.4 100s 0.1 0.2 0.0 1mA 3 - 152 10mA 100mA 1A 0.01 10A 0.1 1 10 Collector Current VCE (VOLTS) VBE(ON) vs IC Safe Operating Area 3 - 153 100 FMMT617 FMMT624 FMMT618 FMMT625 FMMT619 SuperSOT Series FMMT717 FMMT722 FMMT718 FMMT723 FMMT720 THERMAL CHARACTERISTICS AND DERATING INFORMATION DERATING CURVE MAXIMUM TRANSIENT THERMAL RESISTANCE * Reference above figures, Devices were mounted on a 15mmx15mm ceramic substrate 3 - 158