SuperSOT
SOT23 NPN SILICON POWER
(SWITCHING) TRANSISTORS
ISSUE 3 - NOVEMBER 1995
FEATURES
* 625mW POWER DISSIPATION
*I
C CONT 3A
* 12A Peak Pulse Current
* Excellent HFE Characteristics Up To 12A (pulsed)
* Extremely Low Saturation Voltage E.g. 8mV Typ.
* Extremely Low Equivalent On Resistance; RCE(sat)
DEVICE TYPE COMPLEMENT PARTMARKING RCE(sat)
FMMT617 FMMT717 617 50mΩ at 3A
FMMT618 FMMT718 618 50mΩ at 2A
FMMT619 FMMT720 619 75mΩ at 2A
FMMT624 FMMT723 624 -
FMMT625 625 -
ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL
FMMT
617
FMMT
618
FMMT
619
FMMT
624
FMMT
625 UNIT
Collector-Base Voltage VCBO 15 20 50 125 150 V
Collector-Emitter Voltage VCEO 15 20 50 125 150 V
Emitter-Base Voltage VEBO 55555V
Peak Pulse Current** ICM 126633A
Continuous Collector Current IC32.5211A
Base Current IB500 mA
Power Dissipation at Tamb
=25°C* Ptot 625 mW
Operating and Storage Temperature
Range
Tj:Tstg -55 to +150 °C
* Maximum power dissipation is calculated assuming that the device is mounted on a ceramic
substrate measuring 15x15x0.6mm
**Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2%
Spice parameter data is available upon request for these devices
C
B
E
FMMT617 FMMT618
FMMT619 FMMT624
FMMT625
3 - 149
ELECTRICAL CHARACTERISTICS (at Tamb
= 25°C unless otherwise stated).
PARAMETER SYMBOL
FMMT618 FMMT619
UNIT CONDITIONS.
MIN. TYP. MAX. MIN. TYP. MAX.
Collector-Base
Breakdown Voltage
V
(BR)CBO
20 100 50 190 V I
C
=100µA
Collector-Emitter
Breakdown Voltage
V
(BR)CEO
20 27 50 65 V I
C
=10mA*
Emitter-Base
Breakdown Voltage
V
(BR)EBO
5 8.3 5 8.3 V I
E
=100µA
Collector Cut-Off
Current
I
CBO
100
100
nA
nA
V
CB
=16V
V
CB
=40V
Emitter Cut-Off
Current
I
EBO
100 100 nA V
EB
=4V
Collector Emitter
Cut-Off Current
I
CES
100
100
nA
nA
V
CES
=16V
V
CES
=40V
Collector-Emitter
Saturation Voltage
V
CE(sat)
8
70
130
15
150
200
10
125
150
20
200
220
mV
mV
mV
mV
I
C
=0.1A, I
B
=10mA*
I
C
=1A, I
B
=10mA*
I
C
=2A, I
B
=50mA*
I
C
=2.5A, I
B
=50mA*
Base-Emitter
Saturation Voltage
V
BE(sat)
0.89 1.0
0.87 1.0 V
V
I
C
=2A, I
B
=50mA*
I
C
=2.5A, I
B
=50mA*
Base-Emitter
Turn-On Voltage
V
BE(on)
0.79 1.0
0.80 1.0 V
V
IC=2A, V
CE
=2V*
I
C
=2.5A, V
CE
=2V*
Static Forward
Current Transfer
Ratio
h
FE
200
300
200
100
400
450
360
180
200
300
200
100
400
450
400
225
40
I
C
=10mA, V
CE
=2V*
I
C
=200mA, V
CE
=2V*
I
C
=1A, V
CE
=2V*
I
C
=2A, V
CE
=2V*
I
C
=6A, V
CE
=2V*
Transition
Frequency
f
T
100 140 100 165 MHz I
C
=50mA, V
CE
=10V
f=100MHz
Output Capacitance C
obo
23 30 12 20 pF V
CB
=10V, f=1MHz
Turn-On Time t
(on)
170 170 ns V
CC
=10V, I
C
=1A
I
B1
=-I
B2
=10mA
Turn-Off Time t
(off)
400 750 ns
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2%
FMMT618
FMMT619
FMMT618
3 - 152 3 - 153
-55°C
100°C
25°C
0.0
0.2
0.4
0.6
0.8
1.0
1.2
Collector Current
I
C
/I
B
=50
Collector Current
Collector Current
Collector Current
25°C
100°C
-55°C
0.0
0.4
0.1
0.2
0.3
25°C
100°C
-55°C
I
C
/I
B
=50
0.0
0.2
0.4
0.6
0.8
1.0
1.2
V
CE
=2V
0
450
225
25°C
100°C
-55°C
V
CE
=2V
0.2
0.0
1.0
0.8
0.6
0.4
D.C.1s
100ms
10ms
1ms
100
µ
s
10
1.0
0.1
0.01
SINGLE PULSE TEST T
amb
= 25 deg C
VCE (VOLTS)
Safe Operating Area
TYPICAL CHARACTERISTICS
0.1
10A1mA
10A1mA
10A
10A1mA
1
100m
10m
1m
1m 10m 100m 1 10
IC- Collector Current (A)
VCE(SAT) v IC
I
C
/I
B
=10
I
C
/I
B
=50
I
C
/I
B
=100
+25 °C
VCE(SAT) vs IC
VBE(SAT) vs IChFE vs IC
VBE(ON) vs IC
1mA 10mA 100mA 1A
10mA 100mA 1A
10mA 100mA 1A
10mA 100mA 1A 110100
ELECTRICAL CHARACTERISTICS (at Tamb
= 25°C unless otherwise stated).
PARAMETER SYMBOL
FMMT618 FMMT619
UNIT CONDITIONS.
MIN. TYP. MAX. MIN. TYP. MAX.
Collector-Base
Breakdown Voltage
V
(BR)CBO
20 100 50 190 V I
C
=100µA
Collector-Emitter
Breakdown Voltage
V
(BR)CEO
20 27 50 65 V I
C
=10mA*
Emitter-Base
Breakdown Voltage
V
(BR)EBO
5 8.3 5 8.3 V I
E
=100µA
Collector Cut-Off
Current
I
CBO
100
100
nA
nA
V
CB
=16V
V
CB
=40V
Emitter Cut-Off
Current
I
EBO
100 100 nA V
EB
=4V
Collector Emitter
Cut-Off Current
I
CES
100
100
nA
nA
V
CES
=16V
V
CES
=40V
Collector-Emitter
Saturation Voltage
V
CE(sat)
8
70
130
15
150
200
10
125
150
20
200
220
mV
mV
mV
mV
I
C
=0.1A, I
B
=10mA*
I
C
=1A, I
B
=10mA*
I
C
=2A, I
B
=50mA*
I
C
=2.5A, I
B
=50mA*
Base-Emitter
Saturation Voltage
V
BE(sat)
0.89 1.0
0.87 1.0 V
V
I
C
=2A, I
B
=50mA*
I
C
=2.5A, I
B
=50mA*
Base-Emitter
Turn-On Voltage
V
BE(on)
0.79 1.0
0.80 1.0 V
V
IC=2A, V
CE
=2V*
I
C
=2.5A, V
CE
=2V*
Static Forward
Current Transfer
Ratio
h
FE
200
300
200
100
400
450
360
180
200
300
200
100
400
450
400
225
40
I
C
=10mA, V
CE
=2V*
I
C
=200mA, V
CE
=2V*
I
C
=1A, V
CE
=2V*
I
C
=2A, V
CE
=2V*
I
C
=6A, V
CE
=2V*
Transition
Frequency
f
T
100 140 100 165 MHz I
C
=50mA, V
CE
=10V
f=100MHz
Output Capacitance C
obo
23 30 12 20 pF V
CB
=10V, f=1MHz
Turn-On Time t
(on)
170 170 ns V
CC
=10V, I
C
=1A
I
B1
=-I
B2
=10mA
Turn-Off Time t
(off)
400 750 ns
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2%
FMMT618
FMMT619
FMMT618
3 - 152 3 - 153
-55°C
100°C
25°C
0.0
0.2
0.4
0.6
0.8
1.0
1.2
Collector Current
I
C
/I
B
=50
Collector Current
Collector Current
Collector Current
25°C
100°C
-55°C
0.0
0.4
0.1
0.2
0.3
25°C
100°C
-55°C
I
C
/I
B
=50
0.0
0.2
0.4
0.6
0.8
1.0
1.2
V
CE
=2V
0
450
225
25°C
100°C
-55°C
V
CE
=2V
0.2
0.0
1.0
0.8
0.6
0.4
D.C.1s
100ms
10ms
1ms
100
µ
s
10
1.0
0.1
0.01
SINGLE PULSE TEST T
amb
= 25 deg C
VCE (VOLTS)
Safe Operating Area
TYPICAL CHARACTERISTICS
0.1
10A1mA
10A1mA
10A
10A1mA
1
100m
10m
1m
1m 10m 100m 1 10
IC- Collector Current (A)
VCE(SAT) v IC
I
C
/I
B
=10
I
C
/I
B
=50
I
C
/I
B
=100
+25 °C
VCE(SAT) vs IC
VBE(SAT) vs IChFE vs IC
VBE(ON) vs IC
1mA 10mA 100mA 1A
10mA 100mA 1A
10mA 100mA 1A
10mA 100mA 1A 110100
DERATING CURVE
* Reference above figures, Devices were mounted on a 15mmx15mm ceramic substrate
MAXIMUM TRANSIENT THERMAL RESISTANCE
FMMT617 FMMT624
FMMT618 FMMT625
FMMT619
THERMAL CHARACTERISTICS AND DERATING INFORMATION
FMMT717 FMMT722
FMMT718 FMMT723
FMMT720
SuperSOT Series
3 - 158
