© Semiconductor Components Industries, LLC, 2007
February, 2007 − Rev. 11 1Publication Order Number:
MC74HC1G32/D
MC74HC1G32
Single 2−Input OR Gate
The MC74HC1G32 is a high speed CMOS 2−input OR gate
fabricated with silicon gate CMOS technology.
The internal circuit is composed of multiple stages, including a
buffer output which provides high noise immunity and stable output.
The MC74HC1G32 output drive current is 1/2 compared to
MC74HC series.
Features
•High Speed: tPD = 7 ns (Typ) at VCC = 5 V
•Low Power Dissipation: ICC = 1 mA (Max) at TA = 25°C
•High Noise Immunity
•Balanced Propagation Delays (tpLH = tpHL)
•Symmetrical Output Impedance (IOH = IOL = 2 mA)
•Chip Complexity: FET = 44
•Pb−Free Packages are Available
Figure 1. Pinout
VCC
IN B
IN A
OUT Y
GND
Figure 2. Logic Symbol
IN A
IN B OUT Y
≥ 1
1
2
34
5
L
L
H
H
L
H
L
H
FUNCTION TABLE
Inputs Output
AB
L
H
H
H
Y
See detailed ordering and shipping information in the package
dimensions section on page 4 of this data sheet.
ORDERING INFORMATION
PIN ASSIGNMENT
1
2
3 GND
IN B
IN A
4
5V
CC
OUT Y
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MARKING
DIAGRAMS
H4 = Device Code
M = Date Code*
G= Pb−Free Package
SC−88A / SOT−353 / SC−70
DF SUFFIX
CASE 419A
TSOP−5 / SOT−23 / SC−59
DT SUFFIX
CASE 483
H4 M G
G
(Note: Microdot may be in either location)
*Date Code orientation and/or position may vary
depending upon manufacturing location.
1
5
H4 M G
G
M
1
5
MC74HC1G32
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2
MAXIMUM RATINGS
Symbol Parameter Value Unit
VCC DC Supply Voltage *0.5 to )7.0 V
VIN DC Input Voltage *0.5 to VCC )0.5 V
VOUT DC Output Voltage *0.5 to VCC )0.5 V
IIK DC Input Diode Current $20 mA
IOK DC Output Diode Current $20 mA
IOUT DC Output Sink Current $12.5 mA
ICC DC Supply Current per Supply Pin $25 mA
TSTG Storage Temperature Range *65 to )150 °C
TLLead Temperature, 1 mm from Case for 10 Seconds 260 °C
TJJunction Temperature Under Bias )150 °C
qJA Thermal Resistance SC70−5/SC−88A/S OT−353 (Note 1)
SOT23−5/TSOP−5/SC59−5 350
230 °C/W
PDPower Dissipation in Still Air at 85°C SC70−5/SC−88A/SOT−353
SOT23−5/TSOP−5/SC59−5 150
200 mW
MSL Moisture Sensitivity Level 1
FRFlammability Rating Oxygen Index: 28 to 34 UL 94 V−0 @ 0.125 in
VESD ESD Withstand Voltage Human Body Model (Note 2)
Machine Model (Note 3)
Charged Device Model (Note 4)
u2000
u200
N/A
V
ILATCHUP Latchup Performance Above VCC and Below GND at 125°C (Note 5) $500 mA
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended O p e r a t i n g Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. Measured with minimum pad spacing on an FR4 board, using 10 mm by 1 inch, 2 ounce copper trace with no air flow.
2. Tested to EIA/JESD22−A114−A.
3. Tested to EIA/JESD22−A115−A.
4. Tested to JESD22−C101−A.
5. Tested to EIA/JESD78.
RECOMMENDED OPERATING CONDITIONS
Symbol Parameter Min Max Unit
VCC DC Supply Voltage 2.0 6.0 V
VIN DC Input Voltage 0.0 VCC V
VOUT DC Output Voltage 0.0 VCC V
TAOperating Temperature Range *55 )125 °C
tr , tfInput Rise and Fall Time VCC = 2.0 V
VCC = 3.0 V
VCC = 4.5 V
VCC = 6.0 V
0
0
0
0
1000
600
500
400
ns
DEVICE JUNCTION TEMPERATURE VERSUS
TIME TO 0.1% BOND FAILURES
Junction
Temperature °CTime, Hours Time, Years
80 1,032,200 117.8
90 419,300 47.9
100 178,700 20.4
110 79,600 9.4
120 37,000 4.2
130 17,800 2.0
140 8,900 1.0
1
1 10 100 1000
FAILURE RATE OF PLASTIC = CERAMIC
UNTIL INTERMETALLICS OCCUR
Figure 3. Failure Rate vs. Time Junction Temperature
NORMALIZED FAILURE RATE
TIME, YEARS
TJ = 130°C
TJ = 120°C
TJ = 110°C
TJ = 100°C
TJ = 90°C
TJ = 80°C
MC74HC1G32
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3
DC ELECTRICAL CHARACTERISTICS
VCC TA = 255C TA v 855C*555C v TA v 1255C
Symbol Parameter Test Conditions (V) Min Typ Max Min Max Min Max Unit
VIH Minimum High−Level
Input Voltage 2.0
3.0
4.5
6.0
1.5
2.1
3.15
4.20
1.5
2.1
3.15
4.20
1.5
2.1
3.15
4.20
V
VIL Maximum Low−Level
Input Voltage 2.0
3.0
4.5
6.0
0.5
0.9
1.35
1.80
0.5
0.9
1.35
1.80
0.5
0.9
1.35
1.80
V
VOH Minimum High−Level
Output Voltage
VIN = VIH or VIL
VIN = VIH or VIL
IOH = − 20 mA2.0
3.0
4.5
6.0
1.9
2.9
4.4
5.9
2.0
3.0
4.5
6.0
1.9
2.9
4.4
5.9
1.9
2.9
4.4
5.9
V
VIN = VIH or VIL
IOH = − 2 mA
IOH = − 2.6 mA 4.5
6.0 4.18
5.68 4.31
5.80 4.13
5.63 4.08
5.58
VOL Maximum Low−Level
Output Voltage
VIN = VIH or VIL
VIN = VIH or VIL
IOL = 20 mA2.0
3.0
4.5
6.0
0.0
0.0
0.0
0.0
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
V
VIN = VIH or VIL
IOL = 2 mA
IOL = 2.6 mA 4.5
6.0 0.17
0.18 0.26
0.26 0.33
0.33 0.40
0.40
IIN Maximum Input
Leakage Current VIN = 6.0 V or GND 6.0 $0.1 $1.0 $1.0 mA
ICC Maximum Quiescent
Supply Current VIN = VCC or GND 6.0 1.0 10 40 mA
AC ELECTRICAL CHARACTERISTICS (Input tr = tf = 6.0 ns)
TA = 255C TA v 855C*555C v TA v 1255C
Symbol Parameter Test Conditions Min Typ Max Min Max Min Max Unit
ÎÎÎÎ
Î
ÎÎ
Î
Î
ÎÎ
Î
ÎÎÎÎ
tPLH,
tPHL
ÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎ
Î
Î
ÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎ
Maximum Propagation
Delay, Input A or B to Y
ÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎ
VCC = 5.0 V CL = 15 p F
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
3.5
ÎÎ
ÎÎ
15
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
20
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
25
ÎÎ
ÎÎ
ns
ÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎ
VCC = 2.0 V CL = 50 p F
VCC = 3.0 V
VCC = 4.5 V
VCC = 6.0 V
ÎÎÎ
Î
Î
Î
ÎÎÎ
ÎÎÎ
Î
Î
Î
ÎÎÎ
20
12
8
7
ÎÎ
ÎÎ
ÎÎ
100
27
20
17
ÎÎÎ
Î
Î
Î
ÎÎÎ
ÎÎÎ
Î
Î
Î
ÎÎÎ
125
35
25
21
ÎÎÎÎ
Î
ÎÎ
Î
ÎÎÎÎ
ÎÎÎÎ
Î
ÎÎ
Î
ÎÎÎÎ
155
90
35
26
ÎÎ
ÎÎ
ÎÎ
ÎÎÎÎ
Î
ÎÎ
Î
Î
ÎÎ
Î
Î
ÎÎ
Î
ÎÎÎÎ
tTLH,
tTHL
ÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎ
Î
Î
ÎÎÎÎÎ
Î
Î
ÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎ
Output Transition Time
ÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎ
VCC = 5.0 V CL = 15 p F
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
3
ÎÎ
ÎÎ
10
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
15
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
20
ÎÎ
ÎÎ
ns
ÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎ
Î
Î
ÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎ
VCC = 2.0 V CL = 50 p F
VCC = 3.0 V
VCC = 4.5 V
VCC = 6.0 V
ÎÎÎ
Î
Î
Î
Î
Î
Î
ÎÎÎ
ÎÎÎ
Î
Î
Î
Î
Î
Î
ÎÎÎ
25
16
11
9
ÎÎ
ÎÎ
ÎÎ
ÎÎ
125
35
25
21
ÎÎÎ
Î
Î
Î
Î
Î
Î
ÎÎÎ
ÎÎÎ
Î
Î
Î
Î
Î
Î
ÎÎÎ
155
45
31
26
ÎÎÎÎ
Î
ÎÎ
Î
Î
ÎÎ
Î
ÎÎÎÎ
ÎÎÎÎ
Î
ÎÎ
Î
Î
ÎÎ
Î
ÎÎÎÎ
200
60
38
32
ÎÎ
ÎÎ
ÎÎ
ÎÎ
ÎÎÎÎ
Î
ÎÎ
Î
ÎÎÎÎ
CIN
ÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎ
Maximum Input
Capacitance
ÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎ
ÎÎÎ
Î
Î
Î
ÎÎÎ
ÎÎÎ
Î
Î
Î
ÎÎÎ
5
ÎÎ
ÎÎ
ÎÎ
10
ÎÎÎ
Î
Î
Î
ÎÎÎ
ÎÎÎ
Î
Î
Î
ÎÎÎ
10
ÎÎÎÎ
Î
ÎÎ
Î
ÎÎÎÎ
ÎÎÎÎ
Î
ÎÎ
Î
ÎÎÎÎ
10
ÎÎ
ÎÎ
ÎÎ
pF
Typical @ 255C, VCC = 5.0 V
CPD Power Dissipation Capacitance (Note 6) 10 pF
6. CPD is defined as the value of the internal equivalent capacitance which is calculated from the operating current consumption without load.
Average operating current can be obtained by the equation: ICC(OPR) = CPD VCC fin + ICC. CPD is used to determine the no−load dynamic
power consumption; PD = CPD VCC2 fin + ICC VCC.
MC74HC1G32
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4
Figure 4. Switching Waveforms
Figure 5. Test Circuit
VCC
GND
50%
50%
INPUT
A or B
OUTPUT Y
tPHL
tPLH
90%
10%
90%
10%
tTLH tTHL
trtf
*Includes all probe and jig capacitance.
A 1−MHz square input wave is recommended for propagation delay tests.
CL*
OUTPUT
INPUT
ORDERING INFORMATION
Device Package Shipping†
MC74HC1G32DFT1 SC70−5/SC−88A/SOT−353
3000 / Tape & Reel
MC74HC1G32DFT1G SC70−5/SC−88A/SOT−353
(Pb−Free)
MC74HC1G32DFT2 SC70−5/SC−88A/SOT−353
MC74HC1G32DFT2G SC70−5/SC−88A/SOT−353
(Pb−Free)
MC74HC1G32DTT1 SOT23−5/TSOP−5/SC59−5
MC74HC1G32DTT1G SOT23−5/TSOP−5/SC59−5
(Pb−Free)
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
MC74HC1G32
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5
PACKAGE DIMENSIONS
NOTES:
1. DIMENSIONING AND TOLERANCING
PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. 419A−01 OBSOLETE. NEW STANDARD
419A−02.
4. DIMENSIONS A AND B DO NOT INCLUDE
MOLD FLASH, PROTRUSIONS, OR GATE
BURRS.
DIM
A
MIN MAX MIN MAX
MILLIMETERS
1.80 2.200.071 0.087
INCHES
B1.15 1.350.045 0.053
C0.80 1.100.031 0.043
D0.10 0.300.004 0.012
G0.65 BSC0.026 BSC
H−−− 0.10−−−0.004
J0.10 0.250.004 0.010
K0.10 0.300.004 0.012
N0.20 REF0.008 REF
S2.00 2.200.079 0.087
B0.2 (0.008) MM
12 3
45
A
G
S
D 5 PL
H
C
N
J
K
−B−
SC−88A, SOT−353, SC−70
CASE 419A−02
ISSUE J
ǒmm
inchesǓ
SCALE 20:1
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
SOLDERING FOOTPRINT*
0.65
0.025
0.65
0.025
0.50
0.0197
0.40
0.0157
1.9
0.0748
MC74HC1G32
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6
PACKAGE DIMENSIONS
TSOP−5
CASE 483−02
ISSUE G
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. MAXIMUM LEAD THICKNESS INCLUDES
LEAD FINISH THICKNESS. MINIMUM LEAD
THICKNESS IS THE MINIMUM THICKNESS
OF BASE MATERIAL.
4. DIMENSIONS A AND B DO NOT INCLUDE
MOLD FLASH, PROTRUSIONS, OR GATE
BURRS.
5. OPTIONAL CONSTRUCTION: AN
ADDITIONAL TRIMMED LEAD IS ALLOWED
IN THIS LOCATION. TRIMMED LEAD NOT TO
EXTEND MORE THAN 0.2 FROM BODY.
DIM MIN MAX
MILLIMETERS
A3.00 BSC
B1.50 BSC
C0.90 1.10
D0.25 0.50
G0.95 BSC
H0.01 0.10
J0.10 0.26
K0.20 0.60
L1.25 1.55
M0 10
S2.50 3.00
123
54 S
AG
L
B
D
H
CJ
__
0.7
0.028
1.0
0.039
ǒmm
inchesǓ
SCALE 10:1
0.95
0.037
2.4
0.094
1.9
0.074
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
SOLDERING FOOTPRINT*
0.20
5X
CAB
T0.10
2X
2X T0.20
NOTE 5
T
SEATING
PLANE
0.05
K
M
DETAIL Z
DETAIL Z
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to any products herein. SCILLC makes no warranty , representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
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MC74HC1G32/D
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