Actively Cooled Diode Laser Stack 25 1/4 100 W cw, Both Axes Collimated SPL EBxx Preliminary Data Features Applications * Both axes collimated linear stack, actively cooled, for cw operation * Highly reliable strained layer InGa(Al)As/GaAs material with MTTF life time > 10000 h * Low thermal resistance using mini coolers * Sealed housing with desiccating cell * Modular stack design, integration of up to 4 bars * Bar replacement capability for repair / upgrading * * * * End pumping of rods and fibers Direct material processing, soldering Marking, surface processing Medical applications Safety Advices Depending on the mode of operation, these devices emit highly concentrated non visible infrared light which can be hazardous to the human eye. Products which incorporate these devices have to follow the safety precautions given in IEC 60825-1 "Safety of laser products". Type Wavelength1) Bar Count (n) Power Ordering Code SPL EB81-E SPL EB81-H SPL EB81-J SPL EB81-K 808 nm 1 2 3 4 25 W 50 W 75 W 100 W on request SPL EB94-E, SPL EB94-H SPL EB94-J SPL EB94-K 940 nm 1 2 3 4 25 W 50 W 75 W 100 W on request SPL EB98-E, SPL EB98-H, SPL EB98-J, SPL EB98-K 975 nm 1 2 3 4 25 W 50 W 75 W 100 W on request 1) Other wavelengths in the range of 780 nm ... 980 nm are available on request. 2000-11-06 1 SPL EBxx Maximum Ratings (TA = 20 C mount temperature) Parameter Symbol Values Unit min. typ. max. n 1 ... 4 - Pcw - 25 35 W Top + 10 - + 40 C Storage temperature2) Tstg - 20 - + 70 C Maximum coolant pressure Pmax - - 5 bar Number of bars 1) Output power (continuous wave) per bar Operating coolant temperature 2) 1) Standard operating conditions refer to 25 W at 808 nm and 30 W at 940 nm cw collimated optical output power per bar at 20 C using pure water as coolant (resistivity > 0.2 MW cm, using particle filter of 30 m m, and 0.5 l/min flow rate). 2) Condensation must be avoided (> 10K above dew point). 2000-11-06 2 SPL EBxx Diode Characteristics (TA = 20 C mount temperature) Parameter Symbol Values Unit min. typ. max. Emission wavelengths l - - - 808 940 975 - - - nm Spectral width (FWHM)1) Dl - 4 - nm - 18 20 A - 11 13 at 808 nm Ith Threshold current at 940 nm, and 975 nm 1) Differential efficiency (per bar) hd - 0.65 0.75 W/A Operating current1) Iop - 55 60 A Operating voltage (per bar)1) Vop - 1.8 - V Operating voltage1) Vop - 1.8 - V h 28 32 35 % H - n 4 - mm W - 12 - mm Beam divergence1) 2) q^ q|| - 15 20 20 25 mrad Temperature coefficient of wavelength Dl / DT - 0.27 - nm/K Temperature coefficient of operating current ,Iop/Iop,T - 0.5 - %/K dV/dt 0.35 0.5 - l/min ,p - 1.5 3.0 bar Overall efficiency 1) Emitting aperture Coolant flow rate (per bar) Pressure drop 1) 1) 1) Standard operating conditions refer to 25 W at 808 nm and 30 W at 940 nm cw collimated optical output power per bar with water coolant at 20 C. 2) Far field divergence refers to half angle at 1/e2 relative intensity. 2000-11-06 3 SPL EBxx Optical Characteristics (TA = 25 C mount temperature) Optical Output Power Popt vs. Forward Current IF cw-device, 3 bars OHW00920 100 Popt W V 5 V 80 4 60 3 V P 40 2 20 1 0 0 10 20 30 40 50 A 60 0 I 2000-11-06 4 SPL EBxx Package Outlines 25.5 (1.004) 2) 16.9 (0.665) o8 (0.315) / 0.2 deep Tapped for O-ring o6 (0.236) x 1 (0.039) 1) o5 (0.197) 2 x o3 (0.118) H7 / 4 deep 48 (1.890) 3 (0.118) Water IN Water OUT X 4 x Screw DIN912 M3 (0.118) x 40 (1.575) 3) M4 (0.157) o 32.5 (1.280) Negative electrical terminal 56 (2.205) 37 (1.457) 16 (0.630) Laser Beam Height 16 (0.630) Contact (+ and -) 10 (0.394) Laser beam width 34 (1.339) 28 (1.102) 16 (0.630) 1) Ground plate 0.5 (0.020) 2) O-ring material EPDM 3) tapped Alternative DIN 84 - M3 (0.118) x 40 (1.575) + 6 (0.236) 30 (1.181) Positive electrical terminal 15 (0.591) 60 (2.362) GWOY6035 Dimensions are specified as follows: mm (inch). For safety, unpacking, handling, mounting and operating issues, please carefully read our "Notes For Operation II". 2000-11-06 5