TOSHIBA TC4S584F TOSHIBA CMOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC TC4S584F SCHMITT TRIGGER TC4S584F is the one circuit inverter having the schmitt trigger function at the input terminal. That is, since the circuit threshold level voltage at the leading and trailing edges of input waveform are different (Vp, Vx), the TC4S584F can be used in the broad range application, including line receiver, f waveform shaping circuit, astable multivibrator, etc. Uk Us In addition to ordinary inverter. S r MAXIMUM RATINGS CHARACTERISTIC SYMBOL RATING UNIT ssOpe 0.95 Weight : 0.016g (Typ.) DC Supply Voltage Vpb Vs5 -0.5~Vs5 + 20 Vv Input Voltage VIN Vss0.5~Vpp+0.5| V Output Voltage Vout |Vss-0.5~Vpp+0.5) V DC Input Current liIN +10 mA Power Dissipation Pp 200 mW Operating Temperature Topr _A0~85 C Range T Storage Temperature Tstg -65~150 C Range Lead Temperature (10s) TL 260 C LOGIC DIAGRAM MARKING INAO [S>o [>o>o OUT X Type Name PIN ASSIGNMENT (TOP VIEW) AY CA NC el T=] Yop Hee INA mneel Vss Te] out x 961001EBA2 @ TOSHIBA is continually working to improve the quality and the reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to observe standards of safety, and to avoid situations in which a malfunction or failure of a TOSHIBA product could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent products specifications. Also, please keep in mind the precautions and conditions set forth in the TOSHIBA Semiconductor Reliability Handbook. 1997-04-07 1/4TOSHIBA TC4S584F RECOMMENDED OPERATING CONDITIONS (Vsg = OV) CHARACTERISTIC SYMBOL MIN. | TYP. | MAX. | UNIT DC Supply Voltage Vppb 3 18 Vv Input Voltage VIN 0 | Vpp Vv STATIC ELECTRICAL CHARACTERISTICS (Vsg = OV) - - 40C 25C 85C cHaracteristic [>| test conpition [Vpp UNIT BOL (V) | MIN. |MAX.] MIN. | TYP. |MAX.| MIN. |MAX. 5 | 495 | 495 5.00] | 495 High-Level lout|<1A Ont it volta : VOH flouri: mo 10 | 9.95 | 9.95 10.00] | 9.95 P 9 IN= "SS: DD 15 [14.99 | 14.95 15.00] | 14.95 | 5 | |0.05| | 0.00] 0.05/ | 0.05 eee lta . {VOL flour|s 18 10 | | 0.05} | 0.00] 0.05} | 0.05 P g IN='sS- VDD 15 | | 0.05] | 0.00] 0.05! | 0.05 Vou =4.6V 5 |-0.61 |-0.57 -1.0/ |-0.47 outout Hich Vou =2.5V 5 | -25 | -2.1) -4.0] | -1.77 cu Pat '9 lon |VoH =9.5V 10 | -1.5) | -1.3) -2.2) | -14) urren VoH = 13-5V 15 | -409 | -3.4 -9.0] | -23 Vin=Vss. VDD mA VoL =0.4V 5 | 061 | 057 15) | 047 Output Low VoL =0.5V 10 1.5) 1.3 3.8] 1.1 Current OL |Vo, =1.5V 15 | ao | 34 150/ | 29 Vin=Vss. Vpb on Vout =0.5V 5 | 1.95 3.65| 2.05 2.9] 3.35| 2.05] 3.75 aaa ony ex [YP |YouT=1.0V 10 | 43} 74] 45} 5.9] 74] 47] 7.2 g Vout = 1-5V 15 | 69 10.7| 7.1} 9.0] 10.6] 7.1] 10.8 a Vout =4.5V 5 | 1.05 2.75| 1.11 2.1] 2.6| 0.95] 2.65 Tho chotd Vovenes VN |VoyuT=9.0V 10 | 2.) 49] 22 3.5] 47] 20 48] v g Vout = 13.5V 15 | 3.2 7.0| 3.31 5.0] 68] 3.1] 69 5 | 0.1 1.35| 04 0.75| 13] 04 1.50 Hystersis Voltages |Vy 10 1.7) 3.2 1.8 2.4) 3.2 1.7, 3.4 15 | 3.41 48| 3.2) 40] 48] 3.2) 49 Input Hlevel [liq | Vin = 18V 1731 | o1/ | 10-5] o1f | 10 Current | L Level [ly |Vj,=0V 78 | |-01} |-10-3}-01]| |-1.0| * Quiescent 5, t| [0001] 1] | 75 Device Current Ipp | ViIn=Vss. Vpp 10 | 2] | 0.002 2); 15| vA 15 | 4| | 0.004) 4] | 30 (Note) Values are different to TC4584BP, TC4584BF marked (Vp, Vn, Vy). 961001EBA2 @ The products described in this document are subject to foreign exchange and foreign trade control laws. @ The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. @ the information contained herein is subject to change without notice. 1997-04-07 2/4TOSHIBA TC4S584F DYNAMIC ELECTRICAL CHARACTERISTICS (Ta = 25C, Vss = OV, C, = 50pF) CHARACTERISTIC SYMBOL | TEST CONDITION Vpp (VW) MIN. TYP. MAX. UNIT Output Transition Time 80 200 . tTLH _ 10 _ 50 100 (Low to High) 15 _ A0 80 ns wy: . _ 2 Output Transition Time 5 80 00 High [L tTHL 10 50 100 (High to Low) 15 _ 40 80 t 5 170 340 Propagation Delay Time Po _ 10 _ 80 160 ns PHL 15 60 | 120 Input Capacitance CIN 5 7.5 pF CIRCUIT AND WAVEFORM FOR MEASUREMENT OF CIRCUIT P.G. : PULSE GENERATOR INPUT-OUTPUT VOLTAGE CHARACTERISTICS Vin OfS>o0 Vout VDD =Vss @ INPUT-OUTPUT VOLTAGE WAVEFORM DYNAMIC CHARACTERISTICS WAVEFORM OUTPUT HYSTERESIS VOLTAGE VH=Vp-VN VH ] VN Vp VIN @ TRANSFER CHARACTERISTICS 1997-04-07 3/4TOSHIBA TC4S584F OUTLINE DRAWING SSOP5-P-0.95 Unit : mm be 2.940.2 1.940.2 0.95 0.95 i 0.4+0.1 a | Nw O~0.1 Weight : 0.016g (Typ.) 1997-04-07 4/4