2N3055A Transistors Si NPN Power BJT Military/High-RelN V(BR)CEO (V)60 V(BR)CBO (V)100 I(C) Max. (A)15 Absolute Max. Power Diss. (W)115# Maximum Operating Temp (oC)200# I(CBO) Max. (A)5.0m/ @V(CBO) (V) (Test Condition)100 V(CE)sat Max. (V)8.0 @I(C) (A) (Test Condition)10 @I(B) (A) (Test Condition)3.3 h(FE) Min. Current gain.20 h(FE) Max. Current gain.70 @I(C) (A) (Test Condition)4.0 @V(CE) (V) (Test Condition)4.0 f(T) Min. (Hz) Transition Freq10k @I(C) (A) (Test Condition)1.0 @V(CE) (V) (Test Condition)4.0 t(d) Max. (s) Delay time. t(r) Max. (s) Rise time t(on) Max. (s) On time.