NLB-300 0 CASCADABLE BROADBAND GaAs MMIC AMPLIFIER DC TO 10GHz Typical Applications * Narrow and Broadband Commercial and * Gain Stage or Driver Amplifiers for MWRadio/Optical Designs (PTP/PMP/ Military Radio Designs * Linear and Saturated Amplifiers LMDS/UNII/VSAT/WLAN/Cellular/DWDM) The NLB-300 cascadable broadband InGaP/GaAs MMIC amplifier is a low-cost, high-performance solution for general purpose RF and microwave amplification needs. This 50 gain block is based on a reliable HBT proprietary MMIC design, providing unsurpassed performance for small-signal applications. Designed with an external bias resistor, the NLB-300 provides flexibility and stability. The NLB-300 is packaged in a low-cost, surface-mount plastic package, providing ease of assembly for high-volume tape-and-reel requirements. B D 4M A C N5 1 2 3 4 5 E 6 0.08 S L3 GaAs MESFET Si Bi-CMOS SiGe HBT Si CMOS GaN HEMT SiGe Bi-CMOS 9InGaP/HBT 0.535 REF. 2.39 2.54 2.69 0.436 0.510 0.586 2.19 2.34 2.49 1.91 2.16 2.41 1.32 1.52 1.72 0.10 0.15 0.20 0.535 0.660 0.785 0.05 0.10 0.15 0.65 0.75 0.85 0.85 0.95 1.05 4.53 4.68 4.83 4.73 4.88 5.03 Nom. Max. INCHES Min. Nom. Max. 0.021 REF. 0.094 0.100 0.106 0.017 0.020 0.023 0.086 0.092 0.098 0.075 0.085 0.095 0.052 0.060 0.068 0.004 0.006 0.008 0.021 0.026 0.031 0.002 0.004 0.006 0.025 0.029 0.033 0.033 0.037 0.041 0.178 0.184 0.190 0.186 0.192 0.198 Gauge Plane 1J GaAs HBT A B C D E F G H J K L M N MILLIMETERS NOTE: All dimensions are in millimeters, and the dimensions in inches are for reference only. G S Si BJT Min. H F Seating Plane Optimum Technology Matching(R) Applied Symbol Product Description 2 0.1 Kx3 Package Style: Micro-X, 4-Pin, Plastic Features * Reliable, Low-Cost HBT Design * 13.0dB Gain, +11.1dBm P1dB@2GHz * High P1dB of +14.1dBm@6.0GHz and GND 4 +12.7dBm@10.0GHz MARKING - N3 * Single Power Supply Operation * 50 I/O Matched for High Freq. Use RF IN 1 3 RF OUT Ordering Information 2 GND Functional Block Diagram Rev A7 040409 NLB-300 Cascadable Broadband GaAs MMIC Amplifier DC to 10GHz NLB-300-T1 or -T3Tape & Reel, 1000 or 3000 Pieces (respectively) NLB-300-E Fully Assembled Evaluation Board NBB-X-K1 Extended Frequency InGaP Amp Designer's Tool Kit RF Micro Devices, Inc. Tel (336) 664 1233 7628 Thorndike Road Fax (336) 664 0454 Greensboro, NC 27409, USA http://www.rfmd.com 4-131 NLB-300 Absolute Maximum Ratings Parameter RF Input Power Power Dissipation Device Current Channel Temperature Operating Temperature Storage Temperature Rating Unit +20 300 70 200 -45 to +85 -65 to +150 dBm mW mA C C C Caution! ESD sensitive device. RF Micro Devices believes the furnished information is correct and accurate at the time of this printing. However, RF Micro Devices reserves the right to make changes to its products without notice. RF Micro Devices does not assume responsibility for the use of the described product(s). Exceeding any one or a combination of these limits may cause permanent damage. Parameter Specification Min. Typ. Max. Unit Overall Small Signal Power Gain, S21 12.0 8.5 Gain Flatness, GF Input VSWR Output VSWR Output Power @ -1dB Compression, P1dB Noise Figure, NF Third Order Intercept, IP3 Reverse Isolation, S12 Device Voltage, VD Gain Temperature Coefficient, GT/T 3.6 13.0 10.7 8.9 8.9 8.5 0.1 2.2:1 2.8:1 2.0:1 2.2:1 2.9:1 2.4:1 dB dB dB dB dB dB 11.1 14.1 12.7 4.9 +28.6 +27.0 -16 3.8 -0.0015 dBm dBm dBm dB dBm 4.2 dB V dB/C Condition VD =+3.8V, ICC =50mA, Z0 =50, TA =+25C f=0.1GHz to 1.0GHz f=1.0GHz to 4.0GHz f=4.0GHz to 6.0GHz f=6.0GHz to 10.0GHz f=10.0GHz to 12.0GHz f=5.0GHz to 10.0GHz f=0.1GHz to 4.0GHz f=4.0GHz to 7.0GHz f=7.0GHz to 12.0GHz f=0.1GHz to 4.0GHz f=4.0GHz to 7.0GHz f=7.0GHz to 12.0GHz f=2.0GHz f=6.0GHz f=10.0GHz f=3.0GHz f=2.0GHz f=6.0GHz f=0.1GHz to 20.0GHz MTTF versus Temperature @ ICC =50mA Case Temperature Junction Temperature MTTF 85 113 >1,000,000 C C hours 147 C/W Thermal Resistance JC 4-132 J T - T CASE --------------------------- = JC ( C Watt ) V D I CC Rev A7 040409 NLB-300 Pin 1 Function RF IN 2 GND 3 RF OUT Description Interface Schematic RF input pin. This pin is NOT internally DC-blocked. A DC-blocking capacitor, suitable for the frequency of operation, should be used in most applications. DC coupling of the input is not allowed, because this will override the internal feedback loop and cause temperature instability. Ground connection. For best performance, keep traces physically short and connect immediately to ground plane. RF output and bias pin. Biasing is accomplished with an external series resistor and choke inductor to VCC. The resistor is selected to set the DC current into this pin to a desired level. The resistor value is determined by the following equation: ( V CC - V DEVICE ) R = ------------------------------------------I CC 4 GND Rev A7 040409 RF OUT RF IN Care should also be taken in the resistor selection to ensure that the current into the part never exceeds maximum datasheet operating current over the planned operating temperature. This means that a resistor between the supply and this pin is always required, even if a supply near 5.0V is available, to provide DC feedback to prevent thermal runaway. Because DC is present on this pin, a DC-blocking capacitor, suitable for the frequency of operation, should be used in most applications. The supply side of the bias network should also be well bypassed. Same as pin 2. 4-133 NLB-300 Typical Bias Configuration Application notes related to biasing circuit, device footprint, and thermal considerations are available on request. VCC RCC 4 L choke (optional) 1 In 3 Out C block C block 2 VDEVICE Recommended Bias Resistor Values Supply Voltage, VCC (V) Bias Resistor, RCC () 4-134 5 22 8 82 10 122 12 162 15 222 20 322 Rev A7 040409 NLB-300 Extended Frequency InGaP Amplifier Designer's Tool Kit NBB-X-K1 This tool kit was created to assist in the design-in of the RFMD NBB- and NLB-series InGap HBT gain block amplifiers. Each tool kit contains the following. * * * * 5 each NBB-300, NBB-310 and NBB-400 Ceramic Micro-X Amplifiers 5 each NLB-300, NLB-310 and NLB-400 Plastic Micro-X Amplifiers 2 Broadband Evaluation Boards and High Frequency SMA Connectors Broadband Bias Instructions and Specification Summary Index for ease of operation Rev A7 040409 4-135 NLB-300 Tape and Reel Dimensions All Dimensions in Millimeters T A O B S D F 14.732 mm (7") REEL ITEMS Diameter Plastic, Micro-X SYMBOL SIZE (mm) B 178 +0.25/-4.0 FLANGE Thickness Space Between Flange HUB T F Outer Diameter Spindle Hole Diameter O S Key Slit Width Key Slit Diameter A D 18.4 MAX 12.8 +2.0 SIZE (inches) 7.0 +0.079/-0.158 0.724 MAX 0.50 +0.08 76.2 REF 3.0 REF 13.716 +0.5/-0.2 0.540 +0.020/-0.008 1.5 MIN 20.2 MIN 0.059 MIN 0.795 MIN LEAD 1 N3 N3 N3 N3 User Direction of Feed 4.0 All dimensions in mm 0.30 0.05 R0.3 MAX. SEE NOTE 1 2.00 0.05 5.0 +0.1 -0.0 A SEE NOTE 6 5.0 MIN. 1.75 5.50 0.05 B1 SEE NOTE 6 Bo Ko 3.0 A1 Ao 8.0 A 12.0 0.3 R0.3 TYP. SECTION A-A NOTES: 1. 10 sprocket hole pitch cumulative tolerance 0.2. 2. Camber not to exceed 1 mm in 100 mm. 3. Material: PS+C. 4. Ao and Bo measured on a plane 0.3 mm above the bottom of the pocket. 5. Ko measured from a plane on the inside bottom of the pocket to the surface of the carrier. 6. Pocket position relative to sprocket hole measured as true position of pocket, not pocket hole. 4-136 Ao = 7.0 MM A1 = 1.8 MM Bo = 7.0 MM B1 = 1.3 MM Ko = 2.1 MM Rev A7 040409 NLB-300 S11 versus Frequency, Over Temperature S21 versus Frequency, Over Temperature 0.0 14.0 S11, +25C S11, -40C 12.0 S11, +85C -4.0 10.0 -6.0 8.0 S21 (dB) S21 (dB) -2.0 -8.0 6.0 -10.0 4.0 -12.0 2.0 -14.0 0.0 S21, +25C S21, -40C S21, +85C 0.0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10.0 11.0 12.0 0.0 1.0 2.0 3.0 4.0 Frequency (GHz) 5.0 6.0 7.0 8.0 9.0 10.0 11.0 12.0 Frequency (GHz) S12 versus Frequency, Over Temperature S22 versus Frequency, Over Temperature 0.0 0.0 S12, +25C S12, -40C -5.0 S12, +85C -5.0 -10.0 -15.0 S22 (dB) S21 (dB) -10.0 -20.0 -25.0 -15.0 -30.0 -35.0 -20.0 S11, +25C S11, -40C -40.0 S11, +85C -25.0 -45.0 0.0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10.0 11.0 12.0 0.0 1.0 2.0 3.0 4.0 Frequency (GHz) 5.0 6.0 7.0 8.0 9.0 10.0 11.0 12.0 Frequency (GHz) Output P1dB versus Frequency Across Temperature Noise Frequency versus Frequency at +25C 16.0 12.0 14.0 10.0 Noise Figure (dB) Output P1dB (dBm) 12.0 10.0 8.0 6.0 8.0 6.0 4.0 4.0 25C 2.0 40C 2.0 85C 0.0 0.0 0.0 2.0 4.0 6.0 Frequency (GHz) Rev A7 040409 8.0 10.0 12.0 0.0 2.0 4.0 6.0 8.0 10.0 12.0 Frequency (GHz) 4-137 NLB-300 Note: The s-parameter gain results shown include device performance as well as evaluation board and connector loss variations. The insertion losses of the evaluation board and connectors are as follows: 1GHz to 4GHz=-0.06dB 5GHz to 9GHz=-0.22dB 10GHz to 14GHz=-0.50dB 15GHz to 20GHz=-1.08dB 4-138 Rev A7 040409