A D V A N C E D S E M I C O N D U C T O R, I N C. REV. C
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 1/2
Specif i cations are subj ect to change wi thout notice.
CHARACTERISTICS TC = 25 °C
SYMBOL NONETEST CONDITIONS MINIMUM TYPICAL MAXIMUM UNITS
BVCEO IC = 200 mA 35 V
BVCES IC = 200 mA 65 V
BVCBO IC = 10 mA 65 V
BVEBO IE = 10 mA 4.0 V
ICES VCE = 30 V 10 mA
ICBO VCB = 30 V 1.0 mA
hFE VCE = 5.0 V IC = 500 mA 5.0 200 ---
Cob VCB = 30 V f = 1.0 MHz 65 pF
NPN SILICON RF POWER TRANSISTOR
VHB40-28S
DESCRIPTION:
The ASI VHB40-28S is an epitaxial
plana transistor , designed for 28 V,
FM, Calss C RF amplifier s ut ilized in
base stations.
FEATURES:
• Common Emitter
• PG = 7.0 dB at 40 W/175 MHz
• Omnigold™ Metalization System
• Emitter Ballast resistors
MAXIMUM RATINGS
IC 5.0 A
VCBO 65 V
VCEO 35 V
VEBO 4.0 V
PDISS 60 W
TJ -65 °C to +200 °C
TSTG -65 °C to +150 °C
θ
θθ
θJC 2.9 °C/W
PACKAGE STYLE .380 4L STUD
ORDER CODE: ASI10727
MINIMUM
inches / mm
.004 / 0.10
.370 / 9.40
.320 / 8.13
B
C
D
E
F
G
A
MAXIMUM
.385 / 9.78
.330 / 8.38
.130 / 3.30
.007 / 0.18
inches / mm
H.090 / 2.29 .100 / 2.54
DIM
.220 / 5.59 .230 / 5.84
.490 / 12.45.450 / 11.43
I
J
.155 / 3.94 .175 / 4.45
.750 / 19.05
.980 / 24.89
.100 / 2.54
E F
D
ØC
B
.112x45°
G
H
J
I
A
#8-32 UN C -2A
C
B
E E
A D V A N C E D S E M I C O N D U C T O R, I N C. REV. C
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 2/2
ERROR! REFERENCE SOURCE NOT FOUND.
VHB40-28S
Specif i cations are subj ect to change wi thout notice.
PG
η
ηη
ηC
POUT
VCE = 28 V PIN = 7.0 W f = 175 MHz 7.6
40
60 dB
%
W
MINIMUM
inc h es / m m
.004 / 0.10
.370 / 9.40
.320 / 8.13
B
C
D
E
F
G
A
MAXIMUM
.385 / 9.78
.330 / 8.38
.130 / 3.30
.007 / 0.18
inc h es / m m
H.090 / 2.29 .100 / 2.54
DIM
.220 / 5.59 .230 / 5.84
.49 0 / 12 .45.45 0 / 11 .43
I
J
.155 / 3.94 .175 / 4.45
.75 0 / 19 .05
.98 0 / 24 .89
.100 / 2.54
E F
D
ØC
B
.112x45°
G
H
J
I
A
#8-32 U NC -2A
C
B
E
E
