HiPerFASTTM IGBT with Diode V CES IXGK 50N50BU1 IXGK 50N60BU1 I C25 500 V 75 A 600 V 75 A V CE(sat) t fi 2.3 V 2.5 V 100ns 120ns Combi Pack Preliminary data Symbol Test Conditions Maximum Ratings 50N50 50N60 VCES VCGR TJ = 25C to 150C TJ = 25C to 150C; RGE = 1 MW VGES VGEM TO-264 AA 500 500 600 600 V V Continuous Transient 20 30 20 30 V V IC25 IC90 ICM TC = 25C TC = 90C TC = 25C, 1 ms 75 50 200 75 50 200 A A A SSOA (RBSOA) VGE = 15 V, TVJ = 125C, RG = 10 W Clamped inductive load, L = 30 mH PC TC = 25C 300 TJ TJM Tstg Md ICM = 100 @ 0.8 V CES Weight Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s C E G = Gate, E = Emitter, C = Collector, TAB = Collector A Features 300 -55 ... +150 150 -55 ... +150 Mounting torque (M4) G W C C C 0.9/6 Nm/lb.in. 10 g 300 C International standard package JEDEC TO-264 AA High frequency IGBT and antiparallel FRED in one package 2nd generation HDMOSTM process Low VCE(sat) - for minimum on-state conduction losses MOS Gate turn-on - drive simplicity Fast Recovery Epitaxial Diode (FRED) - soft recovery with low IRM Applications Symbol Test Conditions Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. BVCES IC = 500 mA, VGE = 0 V VGE(th) IC = 500 mA, VCE = VGE ICES VCE = 0.8 * VCES VGE = 0 V IGES VCE = 0 V, VGE = 20 V VCE(sat) IC = IC90, VGE = 15 V 50N50 50N60 500 600 2.5 TJ = 25C TJ = 125C 50N50BU1 50N60BU1 IXYS reserves the right to change limits, test conditions, and dimensions. (c) 2000 IXYS All rights reserved 5.5 V V V 250 15 mA mA 100 nA 2.3 2.5 V V AC motor speed control DC servo and robot drives DC choppers Uninterruptible power supplies (UPS) Switch-mode and resonant-mode power supplies Advantages Space savings (two devices in one package) Easy to mount with 1 screw (isolated mounting screw hole) Reduces assembly time and cost High power density 97510A(1/98) 1-6 IXGK50N50BU1 Symbol gfs Test Conditions Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. IC = IC90; VCE = 10 V, Pulse test, t 300 ms, duty cycle 2 % Remarks: Add capacitance from IXGH50N60B (DS95585B) 25 Qg Qge t ri td(off) tfi Eoff S nC 50 nC 70 nC Inductive load, TJ = 25C 50 ns IC = IC90, VGE = 15 V, L = 100 mH, VCE = 0.8 VCES, RG = Roff = 2.7 W 50 ns Dim. 110 ns A A1 A2 b b1 b2 c D E e J K L L1 P Q Q1 R R1 S T IC = IC90, VGE = 15 V, VCE = 0.5 VCES Remarks: Switching times may increase for VCE (Clamp) > 0.8 * VCES, higher TJ or increased RG 50N50 50N60 50N50 50N60 80 150 1.8 150 3.0 ns ns mJ mJ Inductive load, TJ = 125C 50 t ri IC = IC90, VGE = 15 V, L = 100 mH 60 ns Eon VCE = 0.8 VCES, RG = Roff = 2.7 W 3 mJ td(off) Remarks: Switching times may increase for VCE (Clamp) > 0.8 * VCES, higher TJ or increased RG 200 ns 100 250 2.6 4.2 ns td(on) tfi TO-264 AA Outline 200 Qgc td(on) 35 IXGK50N60BU1 Eoff 50N50 50N60 50N50 50N60 ns mJ mJ Millimeter Min. Max. 4.82 2.54 2.00 1.12 2.39 2.90 0.53 25.91 19.81 5.46 0.00 0.00 20.32 2.29 3.17 6.07 8.38 3.81 1.78 6.04 1.57 5.13 2.89 2.10 1.42 2.69 3.09 0.83 26.16 19.96 BSC 0.25 0.25 20.83 2.59 3.66 6.27 8.69 4.32 2.29 6.30 1.83 Inches Min. Max. .190 .202 .100 .114 .079 .083 .044 .056 .094 .106 .114 .122 .021 .033 1.020 1.030 .780 .786 .215 BSC .000 .010 .000 .010 .800 .820 .090 .102 .125 .144 .239 .247 .330 .342 .150 .170 .070 .090 .238 .248 .062 .072 0.42 K/W RthJC RthCK 0.15 Reverse Diode (FRED) Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. Symbol Test Conditions VF IF = IC90, VGE = 0 V, Pulse test, t 300 ms, duty cycle d 2 % IRM t rr IF = IC90, VGE = 0 V, -diF/dt = 480 A/ms VR = 360 V TJ = 125C IF = 1 A; -di/dt = 200 A/ms; VR = 30 V TJ = 25C RthJC (c) 2000 IXYS All rights reserved K/W 19 175 35 1.7 V 33 A ns ns 50 0.75 K/W IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 2-6 IXGK50N50BU1 100 TJ = 25C 7V 60 40 20 11V VGE = 15V 13V 160 IC - Amperes 80 IC - Amperes 200 VGE = 15V 13V 11V 9V TJ = 25C IXGK50N60BU1 9V 120 7V 80 40 5V 5V 0 0 0 1 2 3 4 5 0 2 4 VCE - Volts 8 Figure 2. Extended Output Characteristics 100 1.6 TJ = 125C V = 15V GE 13V 11V VGE = 15V 9V VCE (sat) - Normalized 80 7V 60 40 5V 20 0 0 1 2 3 4 1.2 IC = 50A 1.0 IC = 25A 0.8 0.6 0.4 25 5 IC = 100A 1.4 50 75 VCE - Volts 100 125 150 TJ - Degrees C Figure 3. Saturation Voltage Characteristics Figure 4. Temperature Dependence of VCE(sat) 10000 100 f = 1Mhz VCE = 10V Ciss Capacitance - pF 80 IC - Amperes 10 VCE - Volts Figure 1. Saturation Voltage Characteristics IC - Amperes 6 60 40 TJ = 25C TJ = 125C 1000 Coss 100 Crss 20 10 0 0 2 4 6 VGE - Volts Figure 5. Admittance Curves (c) 2000 IXYS All rights reserved 8 10 0 5 10 15 20 25 30 35 40 VCE-Volts Figure 6. Capacitance Curves 3-6 IXGK50N50BU1 6 12 6 10 5 12 TJ = 125C 4 8 E(OFF) 3 6 2 4 1 2 TJ = 125C 10 E(ON) IC = 100A 4 E(OFF) 8 3 6 IC = 50A E(ON) 2 4 E(OFF) 1 E(OFF) IC =25A E(OFF) - millijoules E(ON) E(ON) - millijoules RG = 4.7 E(OFF) - milliJoules E(ON) - millijoules 5 IXGK50N60BU1 2 E(ON) 0 0 20 40 60 80 0 0 100 0 10 20 30 40 50 0 60 RG - Ohms IC - Amperes Figure 7. Dependence of EON and EOFF on IC. Figure 8. Dependence of EON and EOFF on RG. 600 20 IC =50A VCE = 250V 100 IC - Amperes VGE - Volts 15 10 TJ = 125C 10 RG = 5.2 dV/dt < 5V/ns 1 5 0.1 0 0 50 100 150 200 250 300 0 100 200 300 400 500 VCE - Volts Qg - nanocoulombs Figure 10. Turn-off Safe Operating Area Figure 9. Gate Charge ZthJC (K/W) 1 0.1 D=0.5 D=0.2 0.01 D=0.1 D=0.05 D=0.02 D = Duty Cycle D=0.01 Single pulse 0.001 0.00001 0.0001 0.001 0.01 0.1 1 Pulse Width - Seconds Figure 11. IGBT Transient Thermal Resistance (c) 2000 IXYS All rights reserved 4-6 IXGK50N50BU1 (c) 2000 IXYS All rights reserved IXGK50N60BU1 5-6 IXGK50N50BU1 (c) 2000 IXYS All rights reserved IXGK50N60BU1 6-6