ATP301 Ordering number : ENA1457A SANYO Semiconductors DATA SHEET ATP301 P-Channel Silicon MOSFET General-Purpose Switching Device Applications Features * * ON-resistance RDS(on)=57m (typ.) 10V drive * * Input capacitance Ciss=4000pF (typ.) Halogen free compliance Specifications Absolute Maximum Ratings at Ta=25C Parameter Symbol Drain-to-Source Voltage Conditions Ratings VDSS VGSS Gate-to-Source Voltage Drain Current (DC) ID IDP Drain Current (Pulse) Allowable Power Dissipation Unit --100 PW10s, duty cycle1% V --28 A --112 A 70 W Channel Temperature PD Tch 150 C Storage Temperature Tstg --55 to +150 C Avalanche Energy (Single Pulse) *1 EAS IAV 54 mJ --28 A Avalanche Current *2 Tc=25C V 20 Note : *1 VDD=--30V, L=100H, IAV=--28A *2 L100H, Single pulse Package Dimensions Product & Package Information unit : mm (typ) 7057-001 ATP301-TL-H 1.5 6.5 Packing Type: TL 4.6 2.6 0.4 0.4 0.5 4 * Package : ATPAK * JEITA, JEDEC :* Minimum Packing Quantity : 3,000 pcs./reel Marking ATP301 2.3 6.05 4.6 0.55 0.7 1.7 0.6 2.3 0.1 0.5 3 0.8 Electrical Connection 2,4 2 1 9.5 7.3 LOT No. TL 0.4 1 : Gate 2 : Drain 3 : Source 4 : Drain 1 SANYO : ATPAK 3 http://semicon.sanyo.com/en/network 62712 TKIM/42209QA MS IM TC-00001941 No.A1457-1/7 ATP301 Electrical Characteristics at Ta=25C Parameter Symbol Ratings Conditions min ID=--1mA, VGS=0V VDS=--100V, VGS=0V Drain-to-Source Breakdown Voltage V(BR)DSS Zero-Gate Voltage Drain Current IDSS Gate-to-Source Leakage Current IGSS Cutoff Voltage VGS(off) VGS=16V, VDS=0V VDS=--10V, ID=--1mA Forward Transfer Admittance | yfs | VDS=--10V, ID=--14A Static Drain-to-Source On-State Resistance RDS(on) ID=--14A, VGS=--10V Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance typ Unit max --100 V --2.0 --1 A 10 A --3.5 32 V S 57 75 m 4000 pF 270 pF Crss 150 pF Turn-ON Delay Time td(on) 32 ns Rise Time tr 130 ns Turn-OFF Delay Time td(off) 330 ns Fall Time tf Total Gate Charge Qg Gate-to-Source Charge Qgs Gate-to-Drain "Miller" Charge Qgd Diode Forward Voltage VSD See specified Test Circuit. VDS=--60V, VGS=--10V, ID=--28A Switching Time Test Circuit 0V --10V VDS=--20V, f=1MHz 190 ns 73 nC 16 nC 14 IS=--28A, VGS=0V nC --1.0 --1.5 V Avalanche Resistance Test Circuit VDD= --60V VIN L 50 RG ID= --14A RL=4.3 VIN D PW=10s D.C.1% VOUT ATP301 0V --10V G VDD 50 ATP301 P.G 50 S Ordering Information Device ATP301-TL-H Package Shipping memo ATPAK 3,000pcs./reel Pb Free and Halogen Free No.A1457-2/7 ATP301 --1.5 --2.0 --2.5 --3.0 --3.5 --4.0 Drain-to-Source Voltage, VDS -- V Static Drain-to-Source On-State Resistance, RDS(on) -- m Single pulse ID= --14A 160 140 120 Tc=75C 80 25C 60 --25C 40 20 0 --2 --3 --4 --5 --6 --7 --8 --9 Gate-to-Source Voltage, VGS -- V C 25 C 5 --2 = Tc C 75 10 7 5 3 2 1.0 7 5 --0.1 2 3 5 7 --1.0 2 3 5 7 --10 2 Drain Current, ID -- A 5 VDD= --60V VGS= --10V 7 5 td(off) 2 tf 100 7 tr 5 td(on) 3 25C 5C 14A 100 = -, ID V 0 1 80 = -V GS 60 40 20 0 --25 25 3 5 7 --1.0 2 3 5 7 --10 Drain Current, ID -- A 2 3 5 IT14598 75 100 125 150 IT14595 IS -- VSD --10 7 5 3 2 0 --0.2 --0.4 --0.6 --0.8 --1.0 Diode Forward Voltage, VSD -- V --1.2 IT14597 Ciss, Coss, Crss -- VDS 10000 f=1MHz 7 5 Ciss 3 2 1000 7 5 Coss 3 2 2 50 VGS=0V Single pulse Crss 2 10 --0.1 C Tc= 7 120 --1.0 7 5 3 2 --0.1 7 5 3 2 --0.01 7 5 3 2 --0.001 Ciss, Coss, Crss -- pF 3 --6 IT14593 140 IT14596 SW Time -- ID 1000 Switching Time, SW Time -- ns 3 --5 Single pulse --100 7 5 3 2 Source Current, IS -- A Forward Transfer Admittance, | yfs | -- S 3 --4 Case Temperature, Tc -- C 5 2 --3 RDS(on) -- Tc 0 --50 --10 VDS= --10V 7 --2 Cutoff Voltage, VGS(off) -- V IT14594 | yfs | -- ID 100 --1 160 180 100 0 IT14592 RDS(on) -- VGS 200 0 --4.5 --5.0 5C --0.5 --1.0 Tc= 7 0 25 C --10 Static Drain-to-Source On-State Resistance, RDS(on) -- m 0 --20 --25 C VGS= --4.0V --10 --30 25C 0V 0. --4.5V --20 --40 --25 Drain Current, ID -- A --50 --40 --30 VDS= --10V 75C 0V . --6 .0V --8 --1 Drain Current, ID -- A --50 ID -- VGS(off) --60 Tc=25C Tc= --25 C ID -- VDS --60 100 7 0 --5 --10 --15 --20 --25 Drain-to-Source Voltage, VDS -- V --30 IT14599 No.A1457-3/7 ATP301 VGS -- Qg --10 VDS= --60V ID= --28A --8 Drain Current, ID -- A Gate-to-Source Voltage, VGS -- V --9 --7 --6 --5 --4 --3 --1 0 10 20 30 40 50 60 Total Gate Charge, Qg -- nC PD -- Tc 80 60 50 40 30 20 10 0 20 40 60 80 100 PW10s 10 s 10 0 1m s 10 s 10 ms DC 0 ms op era tio n ID= --28A --10 7 5 3 2 --1.0 7 5 3 2 Operation in this area is limited by RDS(on). 120 Case Temperature, Tc -- C 140 160 IT14602 2 3 5 7 --10 2 3 5 7--100 2 IT14601 Drain-to-Source Voltage, VDS -- V EAS -- Ta 120 70 0 --100 7 5 3 2 IT14600 Avalanche Energy derating factor -- % Allowable Power Dissipation, PD -- W 80 70 IDP= --112A --0.1 7 5 3 Tc=25C 2 Single pulse --0.01 2 3 5 7 --1.0 --0.1 --2 0 ASO 3 2 100 80 60 40 20 0 0 25 50 75 100 125 Ambient Temperature, Ta -- C 150 175 IT14603 No.A1457-4/7 ATP301 Taping Specification ATP301-TL-H No.A1457-5/7 ATP301 Outline Drawing ATP301-TL-H Land Pattern Example Mass (g) Unit 0.266 mm * For reference Unit: mm 6.7 6.5 1.6 2 1.5 2.3 2.3 No.A1457-6/7 ATP301 Note on usage : Since the ATP301 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. 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