STGWA50M65DF2 Trench gate field-stop IGBT, M series 650 V, 50 A low-loss in a TO-247 long leads package Datasheet - production data Features 6 s of minimum short-circuit withstand time VCE(sat) = 1.65 V (typ.) @ IC = 50 A Tight parameters distribution Safer paralleling Positive VCE(sat) temperature coefficient Low thermal resistance Soft and very fast recovery antiparallel diode Maximum junction temperature: TJ = 175 C Applications Figure 1: Internal schematic diagram C (2) Motor control UPS PFC General purpose inverter Description This device is an IGBT developed using an advanced proprietary trench gate field-stop structure. The device is part of the M series IGBTs, which represent an optimal balance between inverter system performance and efficiency where low-loss and short-circuit functionality are essential. Furthermore, the positive VCE(sat) temperature coefficient and tight parameter distribution result in safer paralleling operation. G (1) Sc12850_no_tab E (3) Table 1: Device summary Order code Marking Package Packing STGWA50M65DF2 G50M65DF2 TO-247 long leads Tube May 2017 DocID028694 Rev 3 This is information on a product in full production. 1/16 www.st.com Contents STGWA50M65DF2 Contents 1 Electrical ratings ............................................................................. 3 2 Electrical characteristics ................................................................ 4 2.1 Electrical characteristics (curves) ...................................................... 6 3 Test circuits ................................................................................... 12 4 Package mechanical data ............................................................. 13 4.1 5 2/16 Package information ....................................................................... 13 Revision history ............................................................................ 15 DocID028694 Rev 3 STGWA50M65DF2 1 Electrical ratings Electrical ratings Table 2: Absolute maximum ratings Symbol Parameter Value Unit VCES Collector-emitter voltage (VGE = 0 V) 650 V IC(1) Continuous collector current at TC = 25 C 80 A IC Continuous collector current at TC = 100 C 50 A ICP(2) Pulsed collector current 150 A VGE Gate-emitter voltage 20 V Continuous forward current at TC = 25 C 80 A IF (1) IF Continuous forward current at TC = 100 C 50 A IFP(2) Pulsed forward current 150 A PTOT Total dissipation at TC = 25 C 375 W TSTG Storage temperature range - 55 to 150 C Operating junction temperature range - 55 to 175 C TJ Notes: (1)Current (2)Pulse level is limited by bond wires. width limited by maximium junction temperature. Table 3: Thermal data Symbol Parameter Value Unit RthJC Thermal resistance junction-case IGBT 0.4 C/W RthJC Thermal resistance junction-case diode 0.96 C/W RthJA Thermal resistance junction-ambient 50 C/W DocID028694 Rev 3 3/16 Electrical characteristics 2 STGWA50M65DF2 Electrical characteristics TC = 25 C unless otherwise specified Table 4: Static characteristics Symbol V(BR)CES VCE(sat) VF Parameter Collector-emitter breakdown voltage Collector-emitter saturation voltage Forward on-voltage Test conditions Min. VGE = 0 V, IC = 250 A 650 Typ. 1.65 VGE = 15 V, IC = 50 A, TJ = 125 C 1.95 VGE = 15 V, IC = 50 A, TJ = 175 C 2.1 IF = 50 A 1.85 IF = 50 A, TJ = 125 C 1.65 IF = 50 A, TJ = 175 C 1.55 Gate threshold voltage VCE = VGE, IC = 1 mA ICES Collector cut-off current IGES Gate-emitter leakage current 5 Unit V VGE = 15 V, IC = 50 A VGE(th) Max. 6 2.1 V 2.65 V 7 V VGE = 0 V, VCE = 650 V 25 A VCE = 0 V, VGE = 20 V 250 A Unit Table 5: Dynamic characteristics Symbol 4/16 Parameter Cies Input capacitance Coes Output capacitance Cres Reverse transfer capacitance Test conditions VCE= 25 V, f = 1 MHz, VGE = 0 V Qg Total gate charge Qge Gate-emitter charge Qgc Gate-collector charge VCC = 520 V, IC = 50 A, VGE = 0 to 15 V (see Figure 30: " Gate charge test circuit") DocID028694 Rev 3 Min. Typ. Max. - 4200 - - 252 - - 88 - - 150 - - 32 - - 62 - pF nC STGWA50M65DF2 Electrical characteristics Table 6: IGBT switching characteristics (inductive load) Symbol td(on) tr (di/dt)on td(off) tf Parameter Test conditions Typ. Max. Unit Turn-on delay time 42 - ns Current rise time 21 - ns 1942 - A/s 130 - ns 104 - ns 0.88 - mJ Turn-on current slope Turn-off-delay time Current fall time Min. VCE = 400 V, IC = 50 A, VGE = 15 V, RG = 6.8 (see Figure 29: " Test circuit for inductive load switching" ) Eon(1) Turn-on switching energy (2) Turn-off switching energy 1.57 - mJ Total switching energy 2.45 - mJ Turn-on delay time 42 - ns Current rise time 24 - ns 1700 - A/s 131 - ns 184 - ns 1.97 - mJ Eoff Ets td(on) tr (di/dt)on td(off) tf Turn-on current slope Turn-off-delay time Current fall time VCE = 400 V, IC = 50 A, VGE = 15 V, RG = 6.8 , TJ = 175 C (see Figure 29: " Test circuit for inductive load switching" ) (1) Turn-on switching energy Eoff(2) Turn-off switching energy 2.22 - mJ Total switching energy 4.19 - mJ Eon Ets tsc Short-circuit withstand time VCC 400 V, VGE = 13 V, TJstart 150 C 10 - VCC 400 V, VGE = 15 V, TJstart 150 C 6 - s Notes: (1)Including the reverse recovery of the diode. (2)Including the tail of the collector current. Table 7: Diode switching characteristics (inductive load) Symbol Parameter Test conditions trr Reverse recovery time Qrr Reverse recovery charge Irrm Reverse recovery current dIrr/dt Peak rate of fall of reverse recovery current during tb Err Reverse recovery energy trr Reverse recovery time Qrr Reverse recovery charge Irrm Reverse recovery current dIrr/dt Peak rate of fall of reverse recovery current during tb Err Reverse recovery energy IF = 50 A, VR = 400 V, VGE = 15 V, di/dt = 1000 A/s (see Figure 29: " Test circuit for inductive load switching") IF = 50 A, VR = 400 V, VGE = 15 V, di/dt = 1000 A/s, TJ = 175 C (see Figure 29: " Test circuit for inductive load switching") DocID028694 Rev 3 Min. Typ. Max. Unit - 162 - ns - 1.37 - C - 19 - A - 420 - A/s - 192 - J - 262 - ns - 5.1 - C - 34 - A - 160 - A/s - 676 - J 5/16 Electrical characteristics 2.1 STGWA50M65DF2 Electrical characteristics (curves) Figure 2: Power dissipation vs. case temperature Figure 3: Collector current vs. case temperature Figure 4: Output characteristics (TJ = 25 C) Figure 5: Output characteristics (TJ = 175 C) Figure 6: VCE(sat) vs. junction temperature Figure 7: VCE(sat) vs. collector current 6/16 DocID028694 Rev 3 STGWA50M65DF2 Electrical characteristics Figure 8: Collector current vs. switching frequency Figure 9: Forward bias safe operating area Figure 10: Transfer characteristics Figure 11: Diode VF vs. forward current Figure 12: Normalized VGE(th) vs. junction temperature Figure 13: Normalized V(BR)CES vs. junction temperature DocID028694 Rev 3 7/16 Electrical characteristics STGWA50M65DF2 Figure 14: Capacitance variations Figure 15: Gate charge vs. gate-emitter voltage Figure 16: Switching energy vs. collector current Figure 17: Switching energy vs. gate resistance Figure 18: Switching energy vs. temperature Figure 19: Switching energy vs. collector emitter voltage 8/16 DocID028694 Rev 3 STGWA50M65DF2 Electrical characteristics Figure 20: Short-circuit time and current vs. VGE Figure 21: Switching times vs. collector current Figure 22: Switching times vs. gate resistance Figure 23: Reverse recovery current vs. diode current slope Figure 24: Reverse recovery time vs. diode current slope Figure 25: Reverse recovery charge vs. diode current slope DocID028694 Rev 3 9/16 Electrical characteristics STGWA50M65DF2 Figure 26: Reverse recovery energy vs. diode current slope Figure 27: Thermal impedance for IGBT 10/16 DocID028694 Rev 3 STGWA50M65DF2 Electrical characteristics Figure 28: Thermal impedance for diode CG20930 K = 0.5 = 0.2 = 0.1 -1 10 Z Zthth == kk R Rthj-C thj-C == ttp // p = 0.05 = 0.02 = 0.01 tp SINGLE PULSE 10-2 10-5 10-4 10-3 10-2 DocID028694 Rev 3 10-1 tp(s) 11/16 Test circuits 3 STGWA50M65DF2 Test circuits Figure 29: Test circuit for inductive load switching C A Figure 30: Gate charge test circuit A L=100 H G E B B 3.3 F C G + RG VCC 1000 F D.U.T E - AM01504v 1 Figure 31: Switching waveform Figure 32: Diode reverse recovery waveform di/dt Qrr trr IF ts tf t IRRM 10% IRRM VRRM dv/dt AM01507v1 12/16 DocID028694 Rev 3 STGWA50M65DF2 4 Package mechanical data Package mechanical data In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK(R) packages, depending on their level of environmental compliance. ECOPACK (R) specifications, grade definitions and product status are available at: www.st.com. ECOPACK(R) is an ST trademark. 4.1 Package information Figure 33: TO-247 long leads package outline DocID028694 Rev 3 13/16 Package mechanical data STGWA50M65DF2 Table 8: TO-247 long leads package mechanical data mm Dim. Min. Typ. Max. A 4.90 5.00 5.10 A1 2.31 2.41 2.51 A2 1.90 2.00 2.10 b 1.16 1.26 b2 3.25 b3 2.25 c 0.59 0.66 D 20.90 21.00 21.10 E 15.70 15.80 15.90 E2 4.90 5.00 5.10 E3 2.40 2.50 2.60 e 5.34 5.44 5.54 L 19.80 19.92 20.10 P 3.50 3.60 Q 5.60 S 6.05 L1 14/16 4.30 DocID028694 Rev 3 3.70 6.00 6.15 6.25 STGWA50M65DF2 5 Revision history Revision history Table 9: Document revision history Date Revision 27-Nov-2015 1 First release. 2 Modified: features and applications in cover page Modified: Table 2: "Absolute maximum ratings", Table 4: "Static characteristics", Table 5: "Dynamic characteristics", Table 6: "IGBT switching characteristics (inductive load)", Table 7: "Diode switching characteristics (inductive load)" Added: Section 2.1: "Electrical characteristics (curves)" Minor text changes 3 Modified: title, features and applications on cover page. Modified Table 4: "Static characteristics", Table 7: "Diode switching characteristics (inductive load)" and Figure 13: "Normalized V(BR)CES vs. junction temperature ". Updated Section 4: "Package mechanical data". Minor text changes. 14-Jun-2016 02-May-2017 Changes DocID028694 Rev 3 15/16 STGWA50M65DF2 IMPORTANT NOTICE - PLEASE READ CAREFULLY STMicroelectronics NV and its subsidiaries ("ST") reserve the right to make changes, corrections, enhancements, modifications, and improvements to ST products and/or to this document at any time without notice. Purchasers should obtain the latest relevant information on ST products before placing orders. ST products are sold pursuant to ST's terms and conditions of sale in place at the time of order acknowledgement. Purchasers are solely responsible for the choice, selection, and use of ST products and ST assumes no liability for application assistance or the design of Purchasers' products. No license, express or implied, to any intellectual property right is granted by ST herein. Resale of ST products with provisions different from the information set forth herein shall void any warranty granted by ST for such product. ST and the ST logo are trademarks of ST. All other product or service names are the property of their respective owners. Information in this document supersedes and replaces information previously supplied in any prior versions of this document. (c) 2017 STMicroelectronics - All rights reserved 16/16 DocID028694 Rev 3