May 2017
DocID028694 Rev 3
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This is information on a product in full production.
www.st.com
STGWA50M65DF2
Trench gate field-stop IGBT, M series 650 V, 50 A low-loss
in a TO-247 long leads package
Datasheet - production data
Figure 1: Internal schematic diagram
Features
6 µs of minimum short-circuit withstand time
VCE(sat) = 1.65 V (typ.) @ IC = 50 A
Tight parameters distribution
Safer paralleling
Positive VCE(sat) temperature coefficient
Low thermal resistance
Soft and very fast recovery antiparallel diode
Maximum junction temperature: TJ = 175 °C
Applications
Motor control
UPS
PFC
General purpose inverter
Description
This device is an IGBT developed using an
advanced proprietary trench gate field-stop
structure. The device is part of the M series
IGBTs, which represent an optimal balance
between inverter system performance and
efficiency where low-loss and short-circuit
functionality are essential. Furthermore, the
positive VCE(sat) temperature coefficient and tight
parameter distribution result in safer paralleling
operation.
Table 1: Device summary
Order code
Marking
Package
Packing
STGWA50M65DF2
G50M65DF2
TO-247 long leads
Tube
C (2)
G (1)
E (3)
Sc12850_no_tab
Contents
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Contents
1 Electrical ratings ............................................................................. 3
2 Electrical characteristics ................................................................ 4
2.1 Electrical characteristics (curves) ...................................................... 6
3 Test circuits ................................................................................... 12
4 Package mechanical data ............................................................. 13
4.1 Package information ....................................................................... 13
5 Revision history ............................................................................ 15
STGWA50M65DF2
Electrical ratings
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1 Electrical ratings
Table 2: Absolute maximum ratings
Symbol
Parameter
Value
Unit
VCES
Collector-emitter voltage (VGE = 0 V)
650
V
IC(1)
Continuous collector current at TC = 25 °C
80
A
IC
Continuous collector current at TC = 100 °C
50
A
ICP(2)
Pulsed collector current
150
A
VGE
Gate-emitter voltage
±20
V
IF(1)
Continuous forward current at TC = 25 °C
80
A
IF
Continuous forward current at TC = 100 °C
50
A
IFP(2)
Pulsed forward current
150
A
PTOT
Total dissipation at TC = 25 °C
375
W
TSTG
Storage temperature range
- 55 to 150
°C
TJ
Operating junction temperature range
- 55 to 175
°C
Notes:
(1)Current level is limited by bond wires.
(2)Pulse width limited by maximium junction temperature.
Table 3: Thermal data
Symbol
Parameter
Value
Unit
RthJC
Thermal resistance junction-case IGBT
0.4
°C/W
RthJC
Thermal resistance junction-case diode
0.96
°C/W
RthJA
Thermal resistance junction-ambient
50
°C/W
Electrical characteristics
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2 Electrical characteristics
TC = 25 °C unless otherwise specified
Table 4: Static characteristics
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
V(BR)CES
Collector-emitter breakdown
voltage
VGE = 0 V, IC = 250 µA
650
V
VCE(sat)
Collector-emitter saturation
voltage
VGE = 15 V, IC = 50 A
1.65
2.1
V
VGE = 15 V, IC = 50 A,
TJ = 125 °C
1.95
VGE = 15 V, IC = 50 A,
TJ = 175 °C
2.1
VF
Forward on-voltage
IF = 50 A
1.85
2.65
V
IF = 50 A, TJ = 125 °C
1.65
IF = 50 A, TJ = 175 °C
1.55
VGE(th)
Gate threshold voltage
VCE = VGE, IC = 1 mA
5
6
7
V
ICES
Collector cut-off current
VGE = 0 V, VCE = 650 V
25
µA
IGES
Gate-emitter leakage current
VCE = 0 V, VGE = ± 20 V
±250
µA
Table 5: Dynamic characteristics
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
Cies
Input capacitance
VCE= 25 V, f = 1 MHz,
VGE = 0 V
-
4200
-
pF
Coes
Output capacitance
-
252
-
Cres
Reverse transfer
capacitance
-
88
-
Qg
Total gate charge
VCC = 520 V, IC = 50 A,
VGE = 0 to 15 V
(see Figure 30: " Gate
charge test circuit")
-
150
-
nC
Qge
Gate-emitter charge
-
32
-
Qgc
Gate-collector charge
-
62
-
STGWA50M65DF2
Electrical characteristics
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Table 6: IGBT switching characteristics (inductive load)
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
td(on)
Turn-on delay time
VCE = 400 V, IC = 50 A,
VGE = 15 V, RG = 6.8 Ω
(see Figure 29: " Test circuit
for inductive load switching" )
42
-
ns
tr
Current rise time
21
-
ns
(di/dt)on
Turn-on current slope
1942
-
A/µs
td(off)
Turn-off-delay time
130
-
ns
tf
Current fall time
104
-
ns
Eon(1)
Turn-on switching energy
0.88
-
mJ
Eoff(2)
Turn-off switching energy
1.57
-
mJ
Ets
Total switching energy
2.45
-
mJ
td(on)
Turn-on delay time
VCE = 400 V, IC = 50 A,
VGE = 15 V, RG = 6.8 Ω,
TJ = 175 °C
(see Figure 29: " Test circuit
for inductive load switching" )
42
-
ns
tr
Current rise time
24
-
ns
(di/dt)on
Turn-on current slope
1700
-
A/µs
td(off)
Turn-off-delay time
131
-
ns
tf
Current fall time
184
-
ns
Eon(1)
Turn-on switching energy
1.97
-
mJ
Eoff(2)
Turn-off switching energy
2.22
-
mJ
Ets
Total switching energy
4.19
-
mJ
tsc
Short-circuit withstand time
VCC ≤ 400 V, VGE = 13 V,
TJstart ≤ 150 °C
10
-
µs
VCC ≤ 400 V, VGE = 15 V,
TJstart ≤ 150 °C
6
-
Notes:
(1)Including the reverse recovery of the diode.
(2)Including the tail of the collector current.
Table 7: Diode switching characteristics (inductive load)
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
trr
Reverse recovery time
IF = 50 A, VR = 400 V,
VGE = 15 V, di/dt = 1000 A/μs
(see Figure 29: " Test circuit
for inductive load switching")
-
162
-
ns
Qrr
Reverse recovery charge
-
1.37
-
µC
Irrm
Reverse recovery current
-
19
-
A
dIrr/dt
Peak rate of fall of reverse
recovery current during tb
-
420
-
A/µs
Err
Reverse recovery energy
-
192
-
µJ
trr
Reverse recovery time
IF = 50 A, VR = 400 V,
VGE = 15 V,
di/dt = 1000 A/μs,
TJ = 175 °C
(see Figure 29: " Test circuit
for inductive load switching")
-
262
-
ns
Qrr
Reverse recovery charge
-
5.1
-
µC
Irrm
Reverse recovery current
-
34
-
A
dIrr/dt
Peak rate of fall of reverse
recovery current during tb
-
160
-
A/µs
Err
Reverse recovery energy
-
676
-
µJ
Electrical characteristics
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2.1 Electrical characteristics (curves)
Figure 2: Power dissipation vs. case temperature
Figure 3: Collector current vs. case temperature
Figure 4: Output characteristics (TJ = 25 °C)
Figure 5: Output characteristics (TJ = 175 °C)
Figure 6: VCE(sat) vs. junction temperature
Figure 7: VCE(sat) vs. collector current
STGWA50M65DF2
Electrical characteristics
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Figure 8: Collector current vs. switching
frequency
Figure 9: Forward bias safe operating area
Figure 10: Transfer characteristics
Figure 11: Diode VF vs. forward current
Figure 12: Normalized VGE(th) vs. junction
temperature
Figure 13: Normalized V(BR)CES vs. junction temperature
Electrical characteristics
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Figure 14: Capacitance variations
Figure 15: Gate charge vs. gate-emitter voltage
Figure 16: Switching energy vs. collector current
Figure 17: Switching energy vs. gate resistance
Figure 18: Switching energy vs. temperature
Figure 19: Switching energy vs. collector emitter
voltage
STGWA50M65DF2
Electrical characteristics
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Figure 20: Short-circuit time and current vs. VGE
Figure 21: Switching times vs. collector current
Figure 22: Switching times vs. gate resistance
Figure 23: Reverse recovery current vs. diode
current slope
Figure 24: Reverse recovery time vs. diode current
slope
Figure 25: Reverse recovery charge vs. diode current
slope
Electrical characteristics
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Figure 26: Reverse recovery energy vs. diode current slope
Figure 27: Thermal impedance for IGBT
STGWA50M65DF2
Electrical characteristics
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11/16
CG20930
tp
Zth = k Rthj-C
δ = tp/Ƭ
10-5 10-4 10-3 10-2
10-2
10-1
K
10-1 tp(s)
Ƭ
δ = 0.5
δ = 0.2
δ = 0.1
δ = 0.01
δ = 0.02
δ = 0.05
SINGLE PULSE
Zth = k Rthj-C
δ = tp/Ƭ
tpƬ
Figure 28: Thermal impedance for diode
Test circuits
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3 Test circuits
Figure 29: Test circuit for inductive load
switching
Figure 30: Gate charge test circuit
Figure 31: Switching waveform
Figure 32: Diode reverse recovery waveform
A A
C
E
G
B
RG
+
-
G
C3.3
µF 1000
µF
L=100 µH
VCC
E
D.U.T
B
AM01504v1
t
AM01507v1
10%
VRRM
dv/dt
di/dt
IRRM
IF
trr
tstf
Qrr
IRRM
STGWA50M65DF2
Package mechanical data
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4 Package mechanical data
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK® packages, depending on their level of environmental compliance. ECOPACK®
specifications, grade definitions and product status are available at: www.st.com.
ECOPACK® is an ST trademark.
4.1 Package information
Figure 33: TO-247 long leads package outline
Package mechanical data
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Table 8: TO-247 long leads package mechanical data
Dim.
mm
Min.
Typ.
Max.
A
4.90
5.00
5.10
A1
2.31
2.41
2.51
A2
1.90
2.00
2.10
b
1.16
1.26
b2
3.25
b3
2.25
c
0.59
0.66
D
20.90
21.00
21.10
E
15.70
15.80
15.90
E2
4.90
5.00
5.10
E3
2.40
2.50
2.60
e
5.34
5.44
5.54
L
19.80
19.92
20.10
L1
4.30
P
3.50
3.60
3.70
Q
5.60
6.00
S
6.05
6.15
6.25
STGWA50M65DF2
Revision history
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5 Revision history
Table 9: Document revision history
Date
Revision
Changes
27-Nov-2015
1
First release.
14-Jun-2016
2
Modified: features and applications in cover page
Modified: Table 2: "Absolute maximum ratings", Table 4: "Static
characteristics", Table 5: "Dynamic characteristics", Table 6: "IGBT
switching characteristics (inductive load)", Table 7: "Diode switching
characteristics (inductive load)"
Added: Section 2.1: "Electrical characteristics (curves)"
Minor text changes
02-May-2017
3
Modified: title, features and applications on cover page.
Modified Table 4: "Static characteristics", Table 7: "Diode switching
characteristics (inductive load)" and Figure 13: "Normalized V(BR)CES
vs. junction temperature ".
Updated Section 4: "Package mechanical data".
Minor text changes.
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