TN2510 N-Channel Enhancement-Mode Vertical DMOS FET Features General Description This low threshold, enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertex's well-proven, silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally-induced secondary breakdown. Low threshold (2.0V max.) High input impedance Low input capacitance (125pF max.) Fast switching speeds Low on-resistance Free from secondary breakdown Low input and output leakage Applications Logic level interfaces - ideal for TTL and CMOS Solid state relays Battery operated systems Photo voltaic drives Analog switches General purpose line drivers Telecom switches Supertex's vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired. Ordering Information Device Package Options BVDSS/BVDGS RDS(ON) ID(ON) VGS(th) (min) (A) (max) (V) 3.0 2.0 TO-243AA (SOT-89) Die* (V) (max) () TN2510N8-G TN2510ND 100 1.5 TN2510 -G indicates package is RoHS compliant (`Green'). * MIL visual screening available. Pin Configuration DRAIN Absolute Maximum Ratings Parameter Value Drain-to-source voltage BVDSS Drain-to-gate voltage BVDGS Gate-to-source voltage 20V Operating and storage temperature Soldering temperature* -55OC to +150OC 300OC GATE SOURCE DRAIN TO-243AA (SOT-89) (N8) Product Marking TN5AW W = Code for week sealed = "Green" Packaging Package may or may not include the following marks: Si or TO-243AA (SOT-89) (N8) Absolute Maximum Ratings are those values beyond which damage to the device may occur. Functional operation under these conditions is not implied. Continuous operation of the device at the absolute rating level may affect device reliability. All voltages are referenced to device ground. * Distance of 1.6mm from case for 10 seconds. 1235 Bordeaux Drive, Sunnyvale, CA 94089 Tel: 408-222-8888 www.supertex.com TN2510 Thermal Characteristics ID ID Power Dissipation jc Package (continuous) (mA) (pulsed) (A) @TA = 25OC (W) ( C/W) TO-243AA (SOT-89) 730 5.0 1.6 15 O ( C/W) IDR (mA) IDRM 78 730 5.0 O ja (A) Notes: ID (continuous) is limited by max rated Tj . Mounted on FR5 Board, 25mm x 25mm x 1.57mm. Electrical Characteristics (T A = 25OC unless otherwise specified) Sym Parameter Min Typ Max Units BVDSS Drain-to-source breakdown voltage 100 - - V VGS = 0V, ID = 2.0mA VGS(th) Gate threshold voltage 0.6 - 2.0 V VGS = VDS, ID= 1.0mA Change in VGS(th) with temperature - - -4.5 IGSS Gate body leakage - - 100 nA VGS = 20V, VDS = 0V - - 10 A IDSS Zero gate voltage drain current VGS = 0V, VDS = Max Rating - - 1.0 mA VDS = 0.8 Max Rating, VGS = 0V, TA = 125C ID(ON) On-state drain current 1.2 2.0 - 3.0 6.0 - - - 15 - 1.5 2.0 - 1.0 1.5 - - 0.75 400 800 - VGS(th) RDS(ON) RDS(ON) Static drain-to-source on-state resistance Change in RDS(ON) with temperature GFS Forward transductance CISS Input capacitance - 70 125 COSS Common source output capacitance - 30 70 CRSS Reverse transfer capacitance - 15 25 td(ON) Turn-on delay time - - 10 Rise time - - 10 Turn-off delay time - - 20 Fall time - - 10 Diode forward voltage drop - - Reverse recovery time - 300 tr td(OFF) tf VSD trr Conditions mV/ C VGS = VDS, ID= 1.0mA O A VGS = 5.0V, VDS = 25V VGS = 10V, VDS = 25V VGS = 3.0V, ID = 250mA VGS = 4.5V, ID = 750mA VGS = 10V, ID = 750mA %/ C O VGS = 10V, ID = 750mA mmho VDS = 25V, ID = 1.0A pF VGS = 0V, VDS = 25V, f = 1.0MHz ns VDD = 25V, ID = 1.5A, RGEN = 25 1.8 V VGS = 0V, ISD = 1.5A - ns VGS = 0V, ISD = 1.5A Notes: 1. All D.C. parameters 100% tested at 25OC unless otherwise stated. (Pulse test: 300s pulse, 2% duty cycle.) 2. All A.C. parameters sample tested. Switching Waveforms and Test Circuit 10V VDD 90% INPUT 0V PULSE GENERATOR 10% t(ON) td(ON) VDD t(OFF) tr td(OFF) OUTPUT RGEN tF D.U.T. 10% 10% RL INPUT OUTPUT 0V 90% 90% 1235 Bordeaux Drive, Sunnyvale, CA 94089 Tel: 408-222-8888 www.supertex.com 2 TN2510 Typical Performance Curves TA 1235 Bordeaux Drive, Sunnyvale, CA 94089 Tel: 408-222-8888 www.supertex.com 3 TN2510 Typical Performance Curves (cont.) BVDSS Variation with Temperature On-Resistance vs. Drain Current 1.1 10 V GS = 5V RDS(ON) (ohms) BVDSS (normalized) 8 1.0 6 VGS = 10V 4 2 0 0.9 -50 0 50 100 150 0 2 4 6 8 10 ID (amperes) Tj ( C) Transfer Characteristics V(th) and RDS Variation with Temperature 10 1.2 TA = -55C 2.0 RDS(ON) @ 5V, 0.75A VGS(th) (normalized) ID (amperes) 8 6 25C 4 125C 1.1 1.6 V(th) @ 1mA 1.0 1.2 0.9 0.8 0.8 0.4 2 0 0 2 4 6 8 10 -50 50 0 100 150 Tj ( C) VGS (volts) Capacitance vs. Drain-to-Source Voltage Gate Drive Dynamic Characteristics 10 100 f = 1MHz VGS (volts) C (picofarads) VDS = 10V 8 CISS 75 50 COSS 6 VDS = 40V 190 pF 4 25 2 CRSS 70pF 0 0 0 10 20 30 0 40 0.5 1.0 1.5 2.0 2.5 QG (nanocoulombs) VDS (volts) 1235 Bordeaux Drive, Sunnyvale, CA 94089 Tel: 408-222-8888 www.supertex.com 4 RDS(ON) (normalized) VGS = 25V TN2510 3-Lead TO-243AA (SOT-89) Package Outline (N8) b Symbol Dimensions (mm) b1 A b b1 C D D1 E E1 MIN 1.40 0.44 0.36 0.35 4.40 1.62 2.29 2.13 NOM - - - - - - - - MAX 1.60 0.56 0.48 0.44 4.60 1.83 2.60 2.29 e e1 1.50 BSC 3.00 BSC H L 3.94 0.89 - - 4.25 1.20 JEDEC Registration TO-243, Variation AA, Issue C, July 1986. Drawings not to scale. Supertex Doc. #: DSPD-3TO243AAN8, Version D070908. (The package drawing(s) in this data sheet may not reflect the most current specifications. For the latest package outline information go to http://www.supertex.com/packaging.html.) Supertex inc. does not recommend the use of its products in life support applications, and will not knowingly sell them for use in such applications unless it receives an adequate "product liability indemnification insurance agreement." Supertex inc. does not assume responsibility for use of devices described, and limits its liability to the replacement of the devices determined defective due to workmanship. No responsibility is assumed for possible omissions and inaccuracies. Circuitry and specifications are subject to change without notice. For the latest product specifications refer to the Supertex inc. website: http//www.supertex.com. (c)2009 All rights reserved. Unauthorized use or reproduction is prohibited. Doc.# DSFP-TN2510 A022309 5 1235 Bordeaux Drive, Sunnyvale, CA 94089 Tel: 408-222-8888 www.supertex.com