BC857AT, BT, CT
PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR
Features
• Epitaxial Die Construction
• Complementary NPN Types Available (BC847AT,BT,CT)
• Ultra-Small Surface Mount Package
• Lead Free/RoHS Compliant (Note 2)
• Qualified to AEC-Q101 Standards for High Reliability
• "Green" Device (Note 4 and 5)
Mechanical Data
• Case: SOT-523
• Case Material - Molded Plastic. UL Flammability
Classification Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020C
• Terminals: Solderable per MIL-STD-202, Method 208
• Lead Free Plating (Matte Tin Finish annealed over Alloy
42 leadframe).
• Terminal Connections: See Diagram
• Marking Code: See Table Below & Diagram on Page 2
• Ordering & Date Code Information: See Page 2
• Weight: 0.002 grams (approximate)
DS30275 Rev. 9 - 2
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BC857AT, BT, CT
© Diodes Incorporated
Type Marking
BC857AT 3V
BC857BT 3W
BC857CT 3G
SOT-523
Dim Min Max Typ
A 0.15 0.30 0.22
B 0.75 0.85 0.80
C 1.45 1.75 1.60
D ⎯ ⎯ 0.50
G 0.90 1.10 1.00
H 1.50 1.70 1.60
J 0.00 0.10 0.05
K 0.60 0.80 0.75
L 0.10 0.30 0.22
M 0.10 0.20 0.12
N 0.45 0.65 0.50
α 0° 8° ⎯
All Dimensi mm ons in
A
M
JL
D
BC
H
K
Maximum Ratings @TA = 25°C unless otherwise specified
Characteristic Symbol Value Unit
Collector-Base Voltage VCBO -50 V
Collector-Emitter Voltage VCEO -45 V
Emitter-Base Voltage VEBO -5.0 V
Collector Current IC -100 mA
Power Dissipation (Note 1) Pd 150 mW
Thermal Resistance, Junction to Ambient (Note 1) RθJA 833 °C/W
Operating and Storage Temperature Range Tj, TSTG -55 to +150 °C
Electrical Characteristics @TA = 25°C unless otherwise specified
Characteristic Symbol Min Typ Max Unit Test Condition
Collector-Base Breakdown Voltage (Note 3) V(BR)CBO -50 — — V IC = 10μA, IB = 0
Collector-Emitter Breakdown Voltage (Note 3) V(BR)CEO -45 — — V IC = 10mA, IB = 0
Emitter-Base Breakdown Voltage (Note 3) V(BR)EBO -5 — — V IE = 1μA, IC = 0
DC Current Gain (Note 3) Current Gain A
B
C hFE 125
220
420
—
290
520
250
475
800 —
VCE = -5.0V, IC = -2.0mA
Collector-Emitter Saturation Voltage (Note 3) VCE(SAT) — —
— -300
-650 mV IC = -10mA, IB = -0.5mA
IC = -100mA, IB = -5.0mA
Base-Emitter Saturation Voltage (Note 3) VBE(SAT) —
— -700
-900 —
— mV IC = -10mA, IB = -0.5mA
IC = -100mA, IB = -5.0mA
Base-Emitter Voltage (Note 3) VBE(ON) -600
— —
— -750
-820 mV VCE = -5.0V, IC = -2.0mA
VCE = -5.0V, IC = -10mA
Collector-Cutoff Current (Note 3)
ICBO —
— —
— -15
-4.0 NA
µA VCB = -30V
VCB = -30V, TA = 150°C
Gain Bandwidth Product fT 100 — — MHz VCE = -5.0V, IC = -10mA, f = 100MHz
Output Capacitance COB — — 4.5 pF VCB = -10V, f = 1.0MHz
Noise Figure NF — — 10 dB IC = -0.2mA, VCE = -5.0Vdc,
RS = 2.0KΩ, f = 1.0KHz,
BW = 200Hz
Notes: 1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which
can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
2. No purposefully added lead
3. Short duration pulse test used to minimize self-heating effect.
4. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
5. Product manufactured with Date Code UO (week 40, 2007) and newer are built with Green Molding Compound. Product manufactured prior to Da te
Code UO are built with Non-Green Molding Compound and may contain Halogens or Sb2O3 Fire Retardants.
G
TOP VIEW
C
E
B
N
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© Diodes Incorporated
0
50
100
25 50 75 100 125 150 175 200
P
,
P
O
WE
R
DISSI
P
A
T
I
O
N (mW)
D
T , AMBIENT TEMPERAT URE (°C)
Fig. 1, Max Power Dissipation vs.
Am bi ent Tem peratu r e
A
150
200
250
10.1 10 100 1,000
V,
C
O
LLE
C
T
O
R
T
O
EMI
T
T
E
R
SATURATION VOLTAGE ( V)
CE(SAT)
I , COLLECTOR CURRENT (mA)
Fig. 2, Collector Emitter Saturation Voltage
vs. C ollect or Cu r r ent
C
T = 25°C
A
T = -50°C
A
T = 150°C
A
0
0.1
0.2
0.3
0.4
0.5
I
I
C
B
= 10
0
10
100
1,000
110 100
f,
G
AIN BANDWID
T
H
P
R
O
D
U
C
T
(M
H
z)
t
I , COLLECTOR CURRENT (mA)
Fig. 4, Gain Bandwidth Product vs. Collector Current
C
V = 5V
CE
1
10
100
1,000
110 100 1,000
V = 5V
CE
h, D
C
C
U
R
R
E
N
T
G
AI
N
FE
I , COLLECTOR CURRENT (mA)
Fig. 3, DC Current Gain vs. Collector Current
C
T = 25°C
A
T = -50°C
A
T = 150°C
A
Ordering Information (Note 6)
Device Packaging Shipping
BC857AT-7-F SOT-523 3000/Tape & Reel
SOT-523 3000/Tape & Reel
BC857BT-7-F SOT-523 3000/Tape & Reel
BC857CT-7-F
Notes: 6. For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.
Marking Information
XXYM
XX = Product Type Marking Code (See Page 1), e.g. 3V = BC857AT
YM = Date Code Marking
Y = Year (ex: N = 2002)
M = Month (ex: 9 = September)
Date Code Key
Year 1998 1999 2000 2001 2002 2003 2004 2005 2006 2007 2008 2009 2010 2011 2012
Code J K L M N P R S T U V W X Y Z
Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec
Code 1 2 3 4 5 6 7 8 9 O N D
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© Diodes Incorporated
IMPORTANT NOTICE
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to any product herein. Diodes Incorporated does not assume an y liability arising out of the application or use of any product
described herein; neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall
assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on our website,
harmless against all damages. LIFE SUPPORT
Diodes Incorporated products are not authorized for use as critical components in life support devices or systems without the expressed written
approval of the President of Diodes Incorporated.
