asp 14882 D JT -39-/3 SIEMENS AKTIENGESELLSCHAF Main ratings Drain-source voltage Ys = 400V Continuous drain current I = 11,5A Drain-source on-resistance Apgi,, = 0,5. Q Description FREDET with fast-recovery reverse diode, N-channel, enhancement mode Case Metal case 3A2 in accordance with DIN 41 872, or TO 204 AA (TO 3) in accardance with JEDEC. Approx. weight 12 g Type | Ordering code Buz 202 ~|_C67078-A1107-A2 16 . #1 + Se 7 83 11,8:33 1} max, bending area Maximum ratings 48) D MM 8235405 0014682 1 MESIEG BUZ 202 N-Channel D S$ 640 G 10,920.35 25 420,15 Dimensions in mm Description Symbols | Ratings Units Conditions Drain-source voltage Vos 400 Vv Drain-gate voltage Vocr 400 Vv Reg = 20kQ Continuous drain current Ih 11,5 A To = 26C Pulsed drain current Tous 46 A Tg = 26C Gate-source voltage Vas +20 Vv Max. power dissipation P, 125 WwW To = 26C Operating and storage Ty; temperature range Tetg 55...+160 | C DIN humidity category CG - DIN 40040 IEG climatic category 5/150/56 DIN IEC 68-1 Thermal resistance Chip case Anus 1,0 K/AW Chip - ambient Ansa <35 K/W 592 1174 G-07 we pe on oe fo64) D) 235605 0014443 3 MESTEG y= SS haa eee ree esp 14883 DT 3F-/3 BUZ 202 SIEMENS AKTIENGESELLSCHAF Electrical characteristics (at 7| = 25C unless otherwise specified) - Description Symbol! | Characteristics Unit | Conditions min. | typ. | max. Static ratings Drain-source Vernpss | 400 ~- - Vv Vag = OV breakdown voltage Ih =0,25mA Gate threshold voltage Vas thy 2,1 3,0 4,0 Yog = Ns h =1imA Zero gate voltage Joss - 20 250 pA | = 26C drain current - 100 =; 1000 TF = 126C Vos = 400V Veg = OV Gate-source leakage Toss - 10 100 nA Vag = 20V current VYog = OV Drain-source As (on) ~ 0,45 {0,5 Q Yog = 10V on-resistance bh = 8A Dynamic ratings Forward Gs 3,3 5,2 - s Vog = 256V transconductance Ih = 8A input capacitance Oss - 38 | 4,9 nF | Ms = OV Output capacitance Cora ~ 300 | 500 pF fos = 25V Reverse transfer Cas = 120 | 200 = IMHz capacitance Turn-on time 4, fa (on) - 50 75 ns Yoo = 30V (fon = ta tom + fe) t - 80 420 bh = 29A Turn-off time te ty tot {330 | 490 Vas - {ov Res = 500 (lot = fa pon + 4) t - 110 | 140 Fast-recovery reverse diode Continuous reverse ha - - 115 |A Tg = 25C drain current Pulsed reverse drain loan - 46 current Diode forward on-voltage Yop ~- 1,4 19 Vv ik =2 Jr Veg = OV, F = 25C Reverse recovery time tr ~ 180 | 250 ns i= 25C | i = ha [220 | 300 = 150C eons Reserve recovery charge Q, - 0,65 | 1,2 WG | R= 25C) y Alas y= - 2.6 5,0 = 150C | i00V Repetitive peak reverse Tae ~ - - A T= 25C current _ 15 _ = 150C 593 L175 G~-0O8= ae ee ara me = 64D) D WM 4235605 GOL48s4 MESIEG 88D 14884 Do 7 39U-/3 SIEMENS AKTIENGESELLSCHAF Power dissipation Pp = f(T) Typical output characteristics Ip = (Vos) parameter: 80 ts puisa test, Tj = 25C 140 30 W A =125W f p, 0 > 25 Yes= 100 20 80 5 60 10 40 5 20 0 0 0 50 100 C 180 9 20 # ___ * To Safe operating area fp = (Ys) Typical transfor characterlatic fp = f(Vgg) parameter: O = 0.01, 7g = 26C Parameter: 80 js pulse test, Vos = 25V, 7j = 26C 10 25 A Ip 5 fy A 20 10" 5 15 {0 10 5 5 to" 10 5 10 5 10 SV 10 _ Vos 594 1176 6-09 BUZ 202 IV 6,5V 6V 5V i v Yos 40 88D D MM 8235605 OOL488S 7 MMSIEG gap 14885)0 oD 7 34 ~/3D BUZ 202 STEMENS AKTIENGESELLSCHAF Typical drain-source on-state resistance Draln-source on-state resistance Fos ton) = f (lp) Fos ton = F(7j} parameter: Vgs; 7] = 25C parameter: Ip = 8A, Vgg = 10V (spread) 1,8 1,2 Q Q Roston) 16 N 1SV Roston) 41,0 14 1,2 0,8 i i 4,0 i 0,6 i 0,8 1 0,6 04 0,4 0,2 0,2 0 0 0 5 10 i) 20 25 A 30 0 50 100 c 150 Ip 1; Typical transconductance g, = f(Jp) Gate threshold voltage Vesin) = f(7)) parameter: 80 1s pulse test, parameter; Vog = Veg, Ip = mA Vog = 26V, 7] = 25C (spread) 5 V Vestthy 0 -50 0 50 100 C 150 59564) D a235b05 OOL48ab 5 MASIEG 88D 14886 0D T-34- -/3 BUZ 202 ___ SIENENS AKTIENGESELLSCHAF Typical capacitances C = ayes! Continuous drain current Ip = f(T) parameter: Vag = 0, f= 1M parameter: Veg = 10V 10" nF 5 to" 0 10 20 30 VV 40 0 50 100 c 150 w hs . _~ |. ere characteristic of reverse diode ip = parameter: "I = 80 ps (spread) 10 A 5 | 5 10 | 25C 150C typ 5 = 2 (98%) 0 05 10 15 20 25 V 3,0 __e Vey 1178 G=-11Z thse 86) D MM 4235605 0014647 0 MESIEG 88D 14887 DoD 7 -39-/3 BUZ 202 STEMENS AKTIENGESELLSCHAF Transient thermal Impedance Zyyjq = F(t) parameter: D = t,/T & W 10 5 10! 102 103 51% 5 103 5 107 5 107 5 10 s 10! } Typlcal gate-charge Veg = fF (Qcate) parameter: Ip pug = 17,3A 15 v 0 20 40 60 80 100 nc 120 Qoate 1179 G~12 597