FPD750SOT343E FPD750SOT34 3E Low-Noise High-Linearity Packaged pHEMT LOW-NOISE HIGH-LINEARITY PACKAGED pHEMT NOT FOR NEW DESIGNS Package: SOT343 Features (at 1850MHz) Optimum Technology Matching(R) Applied GaAs HBT RoHS-compliant (Directive 2002/95/EC) Applications GaAs MESFET InGaP HBT SiGe BiCMOS Si BiCMOS SiGe HBT GaAs pHEMT NE W 0.5dB NF Min 20dBm Output Power (P1dB) 16.5dB Small-Signal Gain (SSG) 37dBm Output IP3 DE SI GN The FPD750SOT343CE is a packaged depletion mode pseudomorphic High Electron Mobility Transistor (pHEMT). It utilizes a 0.25mx750m Schottky barrier gate. RFMD's 0.25m process ensures class-leading noise performance. The use of a small footprint plastic package allows for cost effective system implementation. S Product Description Si CMOS Si BJT GaN HEMT InP HBT RF MEMS FO R LDMOS RF Parameter 0.9GHz Typical Performance 1.85GHz 2.6GHz 3.5GHz Unit OP1dB at Gain Compression Small-Signal Gain (SSG) 20 22 19 16.5 20 14 20.5 11 dBm dB PAE Maximum Stable Gain (|S21/S12|) Noise Figure (NF) 50 24 0.5 45 20 0.6 45 18 0.7 50 16 0.8 % dB dB OIP3 (15dB to 5dB below P1dB) 32 35 31 37 31 35 32 38 dBm dBm NO T 802.11a, b, g and WiMAX LNAs PCS/Cellular High Linearity LNAs Other Types of Wireless Infrastructure Systems. Condition VDS =3.3V, IDS =40mA VDS =3.3V, IDS =40mA VDS =3.3V, IDS =40mA, POUT =P1dB VDS =3.3V, IDS =40mA VDS =3.3V, IDS =40mA VDS =3.3V, IDS =40mA VDS =3.3V, IDS =80mA, POUT =9dBm per tone *Note: Based on measured data taken on applications circuits. Electrical Specification Min. Typ. Max. RF/DC Parameter Frequency OP1dB at Gain Compression Small-Signal Gain (SSG) Saturated Drain-Source Current (IDSS) Transconductance (GM) Pinch-Off Voltage (VP) Gate-Source Breakdown Vltg (VBDGS) Gate-Drain Breakdown Vltg (VBDGD) Thermal Resistivity (JC) * 2.0 17 16 185 |0.7| |13| |13| 230 200 |1.0| |16| |18| 143 280 |1.3| Unit GHz dBm dB mA ms V V V C/W Condition VDS =3.3V, IDS =40mA VDS =3.3V, IDS =40mA VDS =1.3V, VGS 0V VDS =1.3V, VGS =0V VDS =1.3V, IDS =0.75mA IGS =0.75mA IDS =0.75mA V DS >3V *Note: All devices are 100% RF and DC tested at 2GHz with ZS =ZL =50. TAMBIENT =22C. RF MICRO DEVICES(R), RFMD(R), Optimum Technology Matching(R), Enabling Wireless ConnectivityTM, PowerStar(R), POLARISTM TOTAL RADIOTM and UltimateBlueTM are trademarks of RFMD, LLC. BLUETOOTH is a trademark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. (c)2006, RF Micro Devices, Inc. DS100526 7628 Thorndike Road, Greensboro, NC 27409-9421 * For sales or technical support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com. 1 of 11 FPD750SOT343E Absolute Maximum Ratings1 Rating Unit Drain-Source Voltage (VDS) (-3V<VGS <-0.5V) Parameter 6 V Gate-Source Voltage (VGS) (0V<VDS <+8V) -3 V Drain-Source Current (IDS) (For VDS >2V) IDSS Gate Current (IG) (Forward or reverse) 7.5 mA RF Input Power (PIN)2 (Under any acceptable bias state) 22 dBm Channel Operating Temperature (TCH) (Under any acceptable bias state) 175 C Caution! ESD sensitive device. Exceeding any one or a combination of the Absolute Maximum Rating conditions may cause permanent damage to the device. Extended application of Absolute Maximum Rating conditions to the device may reduce device reliability. Specified typical performance or functional operation of the device under Absolute Maximum Rating conditions is not implied. RoHS status based on EUDirective2002/95/EC (at time of this document revision). -55 to 150 1.1 Total Power Dissipation (PTOT)3, 4, 5 Gain Compression (Under any bias conditions) 5 Simultaneous Combination of Limits6 (2 or more max. limits) 80 S DE SI GN Storage Temperature (TSTG) (Non-Operating Storage) The information in this publication is believed to be accurate and reliable. However, no responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any infringement of patents, or other rights of third parties, resulting from its use. No license is granted by implication or otherwise under any patent or patent rights of RFMD. RFMD reserves the right to change component circuitry, recommended application circuitry and specifications at any time without prior notice. C W dB % NE W Notes: 1T AMBIENT =22C unless otherwise noted; exceeding any one of these absolute maximum ratings may cause permanent damage to the device. 2 Max. RF input limit must be further limited if input VSWR>2.5:1. 3 Users should avoid exceeding 80% of 2 or more Limits simultaneously. 4 Total Power Dissipation (PTOT) defined as (PDC +PIN)-POUT, where PDC: DC Bias Power, PIN: RF Input Power, POUT: RF Output Power. Total Power Dissipation to be de-rated as follows above 22C: PTOT =1.1-(1/JC)xTPACK, where TPACK =source tab lead temperature above 22C and JC=143C/W. FO R Biasing Guidelines Active bias circuits provide good performance stabilization over variations of operating temperature, but require a larger number of components compared to self-bias or dual-biased. Such circuits should include provisions to ensure that gate bias is applied before drain bias, otherwise the pHEMT may be induced to self-oscillate. Contact your Sales Representative for additional Information. NO T Dual-bias circuits are relatively simple to implement, but will require a regulated negative voltage supply for depletion-mode devices. For standard Class A operation, a 50% of IDSS bias point is recommended. A small amount of RF gain expansion prior to onset of compression is normal for this operating point. A class A/B bias of 25% to 33% offers an optimized solution for NF and OIP3. DC IV Curv es FPD75 0SOT89 0.30 Drain-Source Current (A) 0.25 0.20 VG=-1.50 VG=-1.25V VG=-1.00V VG=-0.75V VG=-0.50V VG=-0.25V VG=0V 0.15 0.10 Note: The recommended method for measuring IDSS, or any particular IDS, is to set the drain-source voltage (VDS) at 1.3V. This measurement point avoids the onset of spurious self-oscillation which would normally distort the current measurement (this effect has been filtered from the I-V curves presented). Setting the VDS >1.3V will generally cause errors in the current measurements, even in stabilized circuits. 0.05 0.00 0.0 0.5 1 .0 1 .5 2.0 2.5 3.0 3.5 4.0 4.5 5 .0 5.5 6.0 Drain-Source Voltag e (V) 2 of 11 7628 Thorndike Road, Greensboro, NC 27409-9421 * For sales or technical support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com. DS100526 FPD750SOT343E Typical Frequency Response N.F.min vs Frequency Biased @ 3.3V MSG & S21 vs Frequency Biased @ 3.3V, 40mA 28 1.20 S21 1.00 20 12 8 0.80 0.60 0.40 ID = 80mA 8.5 9.5 10.5 Frequency (GHz) ID = 40mA 4.8 7.5 4.2 6.5 3.6 5.5 S 4.5 3.0 3.5 2.4 2.5 1.8 1. 5 DE SI GN 0.5 1.2 0.00 0 0.6 0.20 4 6.0 16 5 .4 N.F.min (dB) Mag S21 & MSG (dB) MSG 24 Frequency (GHz) Note: Typical gain and noise figure variation against frequency is shown above. The devices were biased nominally at VDS =3.3V, IDS =40mA. The test devices were tuned for minimum noise figure and maximum gain using tuners at the device input and output ports. Typical RF Performance at 1.85GHz Power Transfer Characteristic VDS = 3.3VIDS = 80mAat f = 1.85GHz 23.0 7.00 21.0 21.0 17.0 4.00 15.0 3.00 13.0 2.00 11.0 1.00 0.00 7.0 -10.0 -8.0 -6.0 FO R 9.0 Output Power (dBm) 5.00 Gain Compression (dB) 19.0 Output Power (dBm) 23.0 6.00 Comp Point NE W Pout (dBm) -4.0 -2.0 0.0 2.0 4.0 6.0 8.0 -1.00 10.0 Pout (dBm) 7.00 6.00 CompPoint 19.0 5.00 17.0 4.00 15.0 3.00 13.0 2.00 11.0 1.00 9.0 0.00 7.0 -10.0 -8.0 -6.0 -4.0 -2.0 0.0 2.0 4.0 6.0 8.0 10.0 Gain Compression (dB) Power Transfer Characteristic VDS = 3.3V IDS = 40mA at f = 1.85GHz -1.00 12.0 Input Power (dBm) Input Power (dBm) Note: Typical power transfer curves at two bias conditions are shown above. The data is taken with the device mounted on evaluation board tuned at 1.85GHz for low noise and gain as shown in the reference design included in this document. Typical Intermodulation Performance VDS = 3.3V IDS = 80mA at f = 1.85GHz 14 -24 14 12 -30 12 Pout (dBm) 10 -36 8 -42 6 -48 4 2 -12.3 -11.3 -38 3rds (dBc) -10.3 -9.3 -8.3 -7.3 Input Power (dBm) -6.3 -5.3 -4.3 -3.3 3rd Order IM Products (dBc) 3rds (dBc) 10 -44 8 -50 6 -56 -54 4 -62 -60 2 Output Power (dBm) Output Power (dBm) Pout (dBm) -32 3rd Order IMProducts (dBc) NO T Typical Intermodulation Performance VDS = 3.3V IDS = 40mA at f = 1.85GHz -68 -12.8 -11.8 -10.8 -9.8 -8.8 -7.8 -6.8 -5.8 -4.9 -3.9 Input Power (dBm) Note: Typical intermodulation performance is shown above. The data is taken with the device mounted on evaluation board tuned at 1.85GHz for low noise and gain as shown in the 1.85GHz reference design in this document. The FPD750SOT343CE DS100526 7628 Thorndike Road, Greensboro, NC 27409-9421 * For sales or technical support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com. 3 of 11 FPD750SOT343E has enhanced Intermodulation performance with an OIP3 value of up to P1dB+16dBm. This effect can be seen when the device is biased at ID =80mA by the bough in the 3rd order product plot line. Noise Parameters Mag Angle 0.60 0.90 1.20 1.50 1.80 2.10 2.40 2.70 3.00 3.30 3.60 3.90 4.20 4.50 4.80 5.10 5.40 5.70 6.00 0.37 0.40 0.43 0.46 0.49 0.52 0.55 0.58 0.61 0.64 0.67 0.70 0.73 0.76 0.78 0.81 0.84 0.87 0.90 0.770 0.689 0.614 0.546 0.485 0.431 0.383 0.342 0.307 0.280 0.258 0.244 0.236 0.236 0.242 0.254 0.273 0.299 0.332 12.2 21.2 30.6 40.4 50.6 61.1 72.1 83.4 95.1 107.2 119.8 132.7 146.0 159.6 173.7 -171.9 -157.0 -141.8 -126.1 Rn/50 0.108 0.100 0.092 0.084 0.077 0.069 0.063 0.057 0.053 0.049 0.046 0.043 0.042 0.040 0.040 0.041 0.044 0.050 0.061 Freq. (GHz) 0.60 0.90 1.20 1.50 1.80 2.10 2.40 2.70 3.00 3.30 3.60 3.90 4.20 4.50 4.80 5.10 5.40 5.70 6.00 N.F.min (dB) 0.39 0.42 0.46 0.50 0.53 0.57 0.60 0.64 0.68 0.71 0.75 0.79 0.83 0.86 0.90 0.94 0.97 1.01 1.05 opt Mag. 0.732 0.644 0.564 0.492 0.428 0.372 0.324 0.283 0.251 0.227 0.210 0.202 0.201 0.208 0.223 0.247 0.277 0.317 0.364 Angle 11.5 22.1 33.0 44.2 55.9 67.9 80.2 93.0 106.2 119.7 133.6 147.9 162.5 177.5 -167.1 -151.4 -135.2 -118.7 -101.8 Rn/50 0.129 0.115 0.102 0.090 0.079 0.070 0.063 0.057 0.053 0.050 0.049 0.048 0.048 0.049 0.051 0.056 0.065 0.080 0.106 NO T FO R NE W N.F.min (dB) DE SI GN opt Freq. (GHz) Biased at VDS =3.3V, IDS =80mA S Biased at VDS =3.3V, IDS =40mA 4 of 11 7628 Thorndike Road, Greensboro, NC 27409-9421 * For sales or technical support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com. DS100526 FPD750SOT343E Reference Design (0.9GHz) Typical Unit 22 dB P1dB 20 dBm dBm OIP3 32 NF 0.5 dB S11 -5 dB S22 -10 dB VD 3.3 V VG -0.4 to -0.6 V ID 40 mA S Gain DE SI GN Parameter Note: OIP3 measured at POUT of 9dBm per tone. Evaluation Board Layout Vg Vd 15pF NE W 0.01uF 20O 15pF Lg 33pF L1 0.01uF + 1.0uF + Ld L2 33pF 0.63" NO T FO R Q1 Component Value 1.45" Component Values Description Lg 56nH LL 1608 Toko chip inductor Ld 56nH LL 1608 Toko chip inductor L1 15nH LL 1608 Toko chip inductor L2 4.7nH LL 1608 Toko chip inductor FPD750SOT343 EVAL Board -Vg Schematic 0.01uF @ 900MHz 15pF DS100526 1.0uF 0.01uF 15pF 20 Ohm Evaluation board material: 31mil thick FR4 with 1/2oz. Cu on both sides. DC blocking capacitors are ATC series 600S. A tantalum 1.0F is used at the drain terminal. All other capacitors are 0603 and 0805 standard chip capacitors. A 0603 size 20 chip resistor from Vishay is used on the gate DC bias line for stability. Vd 33pF 56 nH L1 RF IN 7628 Thorndike Road, Greensboro, NC 27409-9421 * For sales or technical support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com. 56 nH L2 33pF RF OUT 5 of 11 FPD750SOT343E Reference Design (1.85GHz) Unit 16.5 dB P1dB 19 dBm dBm OIP3 31 NF 0.6 dB S11 -6 dB S22 -10 dB VD 3.3 V VG -0.4 to -0.6 V ID 40 mA S Typical Gain DE SI GN Parameter Note: OIP3 measured at POUT of 9dBm per tone. Evaluation Board Layout Vg Vd 15p F 1 5pF 0.01u F NE W 2 0O Lg 3 3pF L1 0 .0 1u F + 1. 0uF + Ld L2 33p F 0.63" Value NO T Component FO R Q1 C2 1.45" Component Values Description Lg 22nH LL 1608 Toko chip inductor Ld 22nH LL 1608 Toko chip inductor L1 2.2nH LL 1005 Toko chip inductor L2 1.8nH LL 1005 Toko chip inductor C2 1.0pF ATC 600S chip inductor FPD750SOT343 EVAL Board -Vg Schematic @ 1.85GHz 6 of 11 0.01uF 1.0uF 15pF 0.01uF 15pF 20 Ohm Evaluation board material: 31mil thick FR4 with 1/2oz. Cu on both sides. DC blocking capacitors are ATC series 600S. A tantalum 1.0F is used at the drain terminal. All other capacitors are 0603 and 0805 standard chip capacitors. A 0603 size 20 chip resistor from Vishay is used on the gate DC bias line for stability. Vd 33pF 22 nH L1 RF IN 7628 Thorndike Road, Greensboro, NC 27409-9421 * For sales or technical support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com. 22 nH L2 C2 33pF RF OUT DS100526 FPD750SOT343E Reference Design (2.6GHz) 2.5 2.6 2.7 Unit Gain 14.2 14 13.5 dB P1dB 20 21 21 dBm OIP3 30.5 31 31 dBm NF 0.8 0.7 0.75 dB S11 -20 -25 -20 dB S22 -7 -8 -10 dB 3.3 VG -0.4 to -0.6 V V ID 40 mA S VD DE SI GN Parameter Note: OIP3 measured at POUT of 9dBm per tone. Evaluation Board Layout Vg Vd 15pF 15pF NE W 0.01uF 20O Lg 33pF 0.01uF + 1.0uF + Ld L1 C2 33pF 0.63" Q1 L2 NO T FO R C1 Component Value 1.45" Component Values Description Lg 18nH LL 1608 Toko chip inductor Ld 18nH LL 1608 Toko chip inductor L1 1.2nH LL 1005 Toko chip inductor L2 2.7nH LL 1005 Toko chip inductor C1 1.0pF ATC 600S chip inductor C2 1.8pF ATC 600S chip inductor Evaluation board material: 31mil thick FR4 with 1/2oz. Cu on both sides. DC blocking capacitors are ATC series 600S. A tantalum 1.0F is used at the drain terminal. All other capacitors are 0603 and 0805 standard chip capacitors. A 0603 size 20 chip resistor from Vishay is used on the gate DC bias line for stability. DS100526 FPD750SOT343 EVAL Board -Vg Schematic 2.6GHz Vd 0.01uF 1.0uF 15pF 0.01uF 15pF 20 Ohm 33pF RF IN 18nH L1 C1 7628 Thorndike Road, Greensboro, NC 27409-9421 * For sales or technical support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com. 18nH C2 33pF RF OUT L2 7 of 11 FPD750SOT343E Reference Design (3.5GHz) Unit 11 dB P1dB 20.5 dBm 32 dBm NF 0.75 dB S11 -11 dB S22 -11 dB VD 3.3 V VG -0.4 to -0.6 V ID 40 mA OIP3 S 3.5 DE SI GN Parameter Gain Note: OIP3 measured at POUT of 9dBm per tone. Evaluation Board Layout Vg Vd 15pF 20 O Lg L1 10pF FO R C1 Value NO T Component Lg Q1 + 1.0uF + Ld C2 10pF 0.63" L2 1.45" Component Values Description 18nH LL 1608 Toko chip inductor Ld 18nH LL 1608 Toko chip inductor L1 1.0nH 0402CS Coil Cr. inductor L2 2.7nH 0402CS Coil Cr. inductor C1 0.3pF ATC 600S chip inductor C2 0.8pF ATC 600S chip inductor Evaluation board material: 31mil thick Rogers 4003 with 1/2oz. Cu on both sides. DC blocking capacitors are ATC series 600S. A tantalum 1.0F is used at the drain terminal. All other capacitors are 0603 and 0805 standard chip capacitors. A 0603 size 20 chip resistor from Vishay is used on the gate DC bias line for stability. 8 of 11 0.01uF 15pF NE W 0.01uF FPD750SOT343 EVAL Board -Vg Schematic @ 3.5GHz Vd 0.01uF 1.0uF 15pF 0.01uF 15pF 20 Ohm 10pF RF IN 18 nH L1 C1 7628 Thorndike Road, Greensboro, NC 27409-9421 * For sales or technical support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com. 18 nH C2 10pF RF OUT L2 DS100526 FPD750SOT343E S-Parameters (Biased at 3V, 40mA) Ang. -51.0 -72.8 -92.2 -109.4 -124.7 -138.4 -151.0 -162.2 -172.8 178.2 169.6 161.3 153.4 145.3 136.9 128.7 120.5 112.3 104.4 S21 Mag. 12.561 11.024 9.608 8.377 7.354 6.547 5.881 5.341 4.886 4.519 4.202 3.950 3.728 3.525 3.340 3.173 3.020 2.874 2.725 S12 Ang. 139.4 123.3 110.0 98.5 88.5 79.6 71.5 64.0 56.9 50.2 43.6 37.2 30.7 24.1 17.5 11.1 4.5 -2.2 -8.8 Mag. 0.034 0.046 0.057 0.065 0.072 0.079 0.086 0.092 0.099 0.105 0.112 0.118 0.125 0.131 0.137 0.143 0.148 0.153 0.156 S22 Ang. 67.2 59.0 53.0 48.1 44.2 40.6 37.5 34.3 31.2 28.2 24.9 21.5 17.9 14.0 9.8 5.6 1.2 -3.4 -8.0 Mag. 0.294 0.248 0.216 0.186 0.162 0.150 0.138 0.132 0.126 0.119 0.116 0.110 0.107 0.110 0.115 0.125 0.141 0.161 0.185 Ang. 69.0 62.1 57.1 53.2 49.8 46.5 43.5 40.5 37.3 34.3 30.9 27.5 23.9 19.9 15.7 11.5 7.0 2.3 -2.3 Mag. 0.256 0.210 0.180 0.151 0.128 0.115 0.104 0.097 0.090 0.083 0.079 0.073 0.068 0.069 0.071 0.079 0.094 0.113 0.138 Ang. -40.8 -59.5 -76.2 -91.7 -106.8 -121.3 -133.8 -145.4 -155.7 -164.8 -175.0 176.0 165.7 153.9 142.7 129.9 119.8 110.4 101.6 S S11 Mag. 0.875 0.788 0.707 0.641 0.590 0.557 0.532 0.515 0.501 0.491 0.484 0.484 0.483 0.489 0.494 0.503 0.515 0.528 0.545 DE SI GN Freq (GHz) 0.60 0.90 1.20 1.50 1.80 2.10 2.40 2.70 3.00 3.30 3.60 3.90 4.20 4.50 4.80 5.10 5.40 5.70 6.00 NE W S-Parameters (Biased at 3V, 80mA) S11 Mag. 0.852 0.755 0.671 0.605 0.556 0.525 0.502 0.487 0.475 0.465 0.459 0.458 0.459 0.464 0.469 0.479 0.492 0.506 0.524 Ang. -53.8 -76.0 -95.6 -112.6 -127.8 -141.4 -153.7 -164.7 -175.1 176.1 167.8 159.6 152.1 144.2 136.1 128.2 120.1 112.2 104.4 NO T FO R Freq (GHz) 0.60 0.90 1.20 1.50 1.80 2.10 2.40 2.70 3.00 3.30 3.60 3.90 4.20 4.50 4.80 5.10 5.40 5.70 6.00 DS100526 S21 Mag. 14.400 12.398 10.653 9.200 8.027 7.115 6.372 5.773 5.272 4.868 4.522 4.246 4.006 3.787 3.588 3.408 3.246 3.094 2.937 Ang. 137.0 120.7 107.5 96.4 86.7 78.1 70.3 63.0 56.2 49.6 43.2 37.0 30.6 24.2 17.8 11.5 5.1 -1.5 -8.0 S12 Mag. 0.029 0.039 0.048 0.056 0.063 0.071 0.078 0.085 0.091 0.098 0.105 0.112 0.119 0.126 0.132 0.138 0.144 0.149 0.153 S22 7628 Thorndike Road, Greensboro, NC 27409-9421 * For sales or technical support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com. Ang. -38.6 -55.1 -69.8 -82.8 -96.3 -109.7 -121.0 -132.3 -141.3 -149.7 -159.5 -167.0 -177.9 169.0 154.1 137.9 125.7 114.4 105.2 9 of 11 FPD750SOT343E Branding Diagram GATE SOURCE NE W DRAIN DE SI GN SOURCE S Package Outline Dimensions in Millimeters Tape Dimensions and Part Orientation NO T FO R Tape and reel for this material are in accordance with EIA-481-1 except where exceptions are identified. 10 of 11 PCB Footprint Units in inches 7628 Thorndike Road, Greensboro, NC 27409-9421 * For sales or technical support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com. DS100526 FPD750SOT343E Preferred Assembly Instructions This package is compatible with both lead free and leaded solder reflow processes as defined within IPC/JEDEC J-STD-020C. The maximum package temperature should not exceed 260C. Handling Precautions To avoid damage to the devices, care should be exercised during handling. Proper Electrostatic Discharge (ESD) precautions should be observed at all stages of storage, handling, assembly, and testing. storage, handling, assembly, and testing. S ESD Rating MSL Rating DE SI GN These devices should be treated as Class 0 (0V to 250V) using the human body model as defined in JEDEC Standard No. 22A114. Further information on ESD control measures can be found in MIL-STD-1686 and MIL-HDBK-263. The device has an MSL rating of Level 1. To determine this rating, preconditioning was performed to the device per the Pb-free solder profile defined within IPC/JEDEC J-STD-020C, moisture/reflow sensitivity classification for non-hermetic solid state surface mount devices. Application Notes and Design Data NE W Application Notes and design data including S-parameters, noise parameters, and device model are available on request and from www.rfmd.com. Reliability An MTTF of 4.2 million hours at a channel temperature of 150C is achieved for the process used to manufacture this device. Disclaimers FO R This product is not designed for use in any space-based or life-sustaining/supporting equipment. Ordering Information Ordering Code Lead-Free Packaged pHEMT FPD750SOT343E RoHS-Compliant Packaged pHEMT with enhanced passivation (recommended for new designs) EB750SOT343CE 2.0GHz Evaluation Board EB750SOT343CE-BC NO T Description Quantity Ordering Code Reel of 1000 FPD750SOT343E Reel of 100 FPD750SOT343ESR Bag of 25 FPD750SOT343ESQ Bag of 5 FPD750SOT343ESB Note: To order RoHS-compliant packaged pHEMT with enhanced passivation parts, replace the E suffix with CE. DS100526 7628 Thorndike Road, Greensboro, NC 27409-9421 * For sales or technical support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com. 11 of 11