CS45-16io1R Thyristor VRRM = 1600 V I TAV = 45 A VT = 1.37 V Single Thyristor Part number CS45-16io1R Backside: isolated 2 1 3 Features / Advantages: Applications: Package: ISOPLUS247 Thyristor for line frequency Planar passivated chip Long-term stability Line rectifying 50/60 Hz Softstart AC motor control DC Motor control Power converter AC power control Lighting and temperature control Isolation Voltage: 3600 V~ Industry standard outline RoHS compliant Epoxy meets UL 94V-0 Soldering pins for PCB mounting Backside: DCB ceramic Reduced weight Advanced power cycling IXYS reserves the right to change limits, conditions and dimensions. (c) 2013 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20130306c CS45-16io1R Ratings Thyristor Conditions Symbol V RSM/DSM Definition max. non-repetitive reverse/forward blocking voltage TVJ = 25C max. 1700 Unit V V RRM/DRM max. repetitive reverse/forward blocking voltage TVJ = 25C 1600 V I R/D reverse current, drain current VR/D = 1600 V TVJ = 25C 50 A VR/D = 1600 V TVJ = 125C 3 mA TVJ = 25C 1.36 V 1.73 V 1.37 V VT IT = forward voltage drop 45 A IT = 90 A IT = 45 A IT = 90 A I TAV average forward current TC = 80C 180 sine I T(RMS) RMS forward current VT0 threshold voltage rT slope resistance R thJC thermal resistance junction to case R thCH thermal resistance case to heatsink total power dissipation I TSM max. forward surge current value for fusing typ. TVJ = 125 C for power loss calculation only Ptot It min. 1.85 V T VJ = 150 C 45 A 71 A TVJ = 150 C 0.88 V 150 W t = 10 ms; (50 Hz), sine TVJ = 45C 520 A t = 8,3 ms; (60 Hz), sine VR = 0 V 560 A t = 10 ms; (50 Hz), sine TVJ = 150 C 440 A A t = 8,3 ms; (60 Hz), sine VR = 0 V 475 t = 10 ms; (50 Hz), sine TVJ = 45C 1.35 kAs t = 8,3 ms; (60 Hz), sine t = 10 ms; (50 Hz), sine VR = 0 V 1.31 kAs TVJ = 150 C 970 As 940 As t = 8,3 ms; (60 Hz), sine VR = 0 V VR = 400 V f = 1 MHz TVJ = 25C PGM max. gate power dissipation t P = 30 s T C = 150 C 22 t P = 300 s average gate power dissipation critical rate of rise of current K/W 0.25 junction capacitance (di/dt) cr m K/W TC = 25C CJ PGAV 11 0.8 TVJ = 125C; f = 50 Hz repetitive, IT = 135 A pF 10 W 5 W 0.5 W 150 A/s t P = 200 s; di G /dt = 0.3 A/s; IG = 0.3 A; VD = VDRM non-repet., IT = 45 A 500 A/s (dv/dt) cr critical rate of rise of voltage TVJ = 125C VGT gate trigger voltage VD = 6 V TVJ = 25 C 1.5 TVJ = -40 C 1.6 V I GT gate trigger current VD = 6 V TVJ = 25 C 80 mA TVJ = -40 C 200 mA TVJ = 125 C 0.2 V 10 mA TVJ = 25 C 150 mA VD = VDRM 1000 V/s R GK = ; method 1 (linear voltage rise) VGD gate non-trigger voltage I GD gate non-trigger current IL latching current VD = VDRM t p = 10 s IG = 0.3 A; di G /dt = V 0.3 A/s IH holding current VD = 6 V R GK = TVJ = 25 C 100 mA t gd gate controlled delay time VD = 1/2 VDRM TVJ = 25 C 2 s tq turn-off time IG = 0.3 A; di G /dt = 0.3 A/s VR = 100 V; I T = 45 A; VD = VDRM TVJ = 150 C di/dt = 15 A/s; dv/dt = IXYS reserves the right to change limits, conditions and dimensions. (c) 2013 IXYS all rights reserved 150 s 20 V/s; t p = 200 s Data according to IEC 60747and per semiconductor unless otherwise specified 20130306c CS45-16io1R Package Ratings ISOPLUS247 Symbol I RMS Definition Conditions RMS current per terminal Tstg storage temperature T VJ virtual junction temperature min. typ. max. 70 Unit A -55 150 C -40 150 C Weight 6 FC 20 mounting force with clip d Spp/App creepage distance on surface | striking distance through air d Spb/Apb VISOL t = 1 minute 120 N terminal to terminal 2.7 mm terminal to backside 4.1 mm 3600 V 3000 V t = 1 second isolation voltage g 50/60 Hz, RMS; IISOL 1 mA Product Marking UL listed Logo IXYS (R) ISOPLUS(R) ABCXXXXXX Part No. Ayyww Assembly Line NNNNNN Date Code Assembly Code Ordering Standard Part Number CS45-16io1R Similar Part CS45-08io1 CS45-12io1 CS45-16io1 Equivalent Circuits for Simulation I V0 R0 Marking on Product CS45-16io1R Package TO-247AD (3) TO-247AD (3) TO-247AD (3) * on die level Delivery Mode Tube Code No. 480312 Voltage class 800 1200 1600 T VJ = 150C Thyristor V 0 max threshold voltage 0.88 V R 0 max slope resistance * 8.5 m IXYS reserves the right to change limits, conditions and dimensions. (c) 2013 IXYS all rights reserved Quantity 30 Data according to IEC 60747and per semiconductor unless otherwise specified 20130306c CS45-16io1R Outlines ISOPLUS247 A2 E D2 A E1 Q Dim. D D3 D1 R A A1 A2 b b2 b4 c D D1 D2 D3 E E1 e L L1 Q R W 2 3 L L1 1 3x b 2x b2 Inches min max 0.190 0.205 0.090 0.100 0.075 0.085 0.045 0.055 0.075 0.087 0.115 0.128 0.024 0.033 0.819 0.840 0.620 0.640 0.065 0.085 0.799 0.815 0.620 0.635 0.520 0.540 0.215 BSC 0.780 0.811 0.150 0.172 0.220 0.244 0.167 0.217 0.004 Die konvexe Form des Substrates ist typ. < 0.04 mm uber der Kunststoffoberflache der Bauteilunterseite The convex bow of substrate is typ. < 0.04 mm over plastic surface level of device bottom side 2x e c b4 Millimeter min max 4.83 5.21 2.29 2.54 1.91 2.16 1.14 1.40 1.91 2.20 2.92 3.24 0.61 0.83 20.80 21.34 15.75 16.26 1.65 2.15 20.30 20.70 15.75 16.13 13.21 13.72 5.45 BSC 19.81 20.60 3.81 4.38 5.59 6.20 4.25 5.50 0.10 A1 Die Gehauseabmessungen entsprechen dem Typ TO-247 AD gema JEDEC auer Schraubloch und Lmax. This drawing will meet all dimensions requiarement of JEDEC outline TO-247 AD except screw hole and except Lmax. W 2 1 3 IXYS reserves the right to change limits, conditions and dimensions. (c) 2013 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20130306c CS45-16io1R Thyristor 100 450 80 400 10000 50 Hz, 80% VRRM VR = 0 V TVJ = 45C 60 IT 350 2 It [A] 40 TVJ = 45C 1000 ITSM 300 2 [A s] [A] 125C 150C 20 TVJ = 125C 250 TVJ = 25C 0 0.5 1.0 TVJ = 125C 200 1.5 100 2.0 0.01 0.1 1 2 3 t [s] VT [V] t [ms] Fig. 3 I t versus time (1-10 ms) 1000 1: IGD, TVJ = 150C 4 5 6 7 8 910 2 Fig. 2 Surge overload current Fig. 1 Forward characteristics 10 1 80 2: IGT, TVJ = 25C 3: IGT, TVJ = -40C dc = 1 0.5 0.4 0.33 0.17 0.08 60 6 2 VG 1 100 5 3 typ. tgd IT(AV)M Limit 40 1 [s] [V] 4 [A] 10 TVJ = 125C 20 4: PGAV = 0.5 W 5: PGM = 1 W 6: PGM = 10 W 0.1 1 10 100 1000 1 10 10000 0 100 dc = 1 0.5 0.4 0.33 0.17 0.08 60 [W] 25 50 75 Fig. 6 Max. forward current at case temperature 0.4 RthHA 0.6 0.8 1.0 2.0 4.0 8.0 40 0.3 ZthJC 0.2 [K/W] 20 0.1 0 0 100 125 150 TC [C] Fig. 5 Gate controlled delay time Fig. 4 Gate trigger characteristics P(AV) 0 IG [mA] IG [mA] 80 1000 20 40 IF(AV) [A] 0 50 100 150 Tamb [C] (c) 2013 IXYS all rights reserved 101 102 ti [s] 0.044 0.039 0.011 0.0001 0.047 0.09 0.18 0.02 0.4 0.12 103 104 t [ms] Fig. 7a Power dissipation versus direct output current Fig. 7b and ambient temperature IXYS reserves the right to change limits, conditions and dimensions. 0.0 100 Rthi [K/W] Fig. 8 Transient thermal impedance Data according to IEC 60747and per semiconductor unless otherwise specified 20130306c