TIC216 SERIES SILICON TRIACS Sensitive Gate Triacs 6 A RMS Glass Passivated Wafer MT1 1 400 V to 800 V Off-State Voltage MT2 2 Max IGT of 5 mA (Quadrants 1 - 3) G 3 TO-220 PACKAGE (TOP VIEW) Pin 2 is in electrical contact with the mounting base. MDC2ACA absolute maximum ratings over operating case temperature (unless otherwise noted) RATING SYMBOL VALUE TIC216D TIC216M Repetitive peak off-state voltage (see Note 1) TIC216S 600 VDRM V 700 TIC216N Full-cycle RMS on-state current at (or below) 70C case temperature (see Note 2) UNIT 400 800 IT(RMS) 6 A Peak on-state surge current full-sine-waveat (or below) 25C case temperature (see Note 3) ITSM 60 A Peak gate current IGM 1 A Peak gate power dissipation at (or below) 85C case temperature (pulse width 200 s) PGM 2.2 W Average gate power dissipation at (or below) 85C case temperature (see Note 4) PG(AV) 0.9 W Operating case temperature range TC -40 to +110 C Storage temperature range Tstg -40 to +125 C TL 230 C Lead temperature 1.6 mm from case for 10 seconds NOTES: 1. These values apply bidirectionally for any value of resistance between the gate and Main Terminal 1. 2. This value applies for 50-Hz full-sine-wave operation with resistive load. Above 70C derate linearly to 110C case temperature at the rate of 150 mA/C. 3. This value applies for one 50-Hz full-sine-wave when the device is operating at (or below) the rated value of on-state current. Surge may be repeated after the device has returned to original thermal equilibrium. During the surge, gate control may be lost. 4. This value applies for a maximum averaging time of 20 ms. electrical characteristics at 25C case temperature (unless otherwise noted ) PARAMETER IDRM IGT TEST CONDITIONS Repetitive peak off-state current MIN VD = rated VDRM IG = 0 TC = 110C TYP MAX UNIT 2 mA Vsupply = +12 V RL = 10 tp(g) > 20 s 5 Gate trigger Vsupply = +12 V RL = 10 tp(g) > 20 s -5 current Vsupply = -12 V RL = 10 tp(g) > 20 s -5 Vsupply = -12 V RL = 10 tp(g) > 20 s 10 mA All voltages are with respect to Main Terminal 1. DECEMBER 1971 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice. 1 TIC216 SERIES SILICON TRIACS electrical characteristics at 25C case temperature (unless otherwise noted) (continued) PARAMETER VGT VT TYP MAX tp(g) > 20 s 2.2 Gate trigger Vsupply = +12 V RL = 10 tp(g) > 20 s -2.2 voltage Vsupply = -12 V RL = 10 tp(g) > 20 s -2.2 On-state voltage Holding current IL Latching current dv/dt(c) MIN RL = 10 IH dv/dt TEST CONDITIONS Vsupply = +12 V Critical rate of rise of off-state voltage Critical rise of commutation voltage Vsupply = -12 V RL = 10 tp(g) > 20 s 3 IT = 8.4 A IG = 50 mA (see Note 5) 1.7 Vsupply = +12 V IG = 0 Init' ITM = 100 mA 30 Vsupply = -12 V IG = 0 Init' ITM = -100 mA -30 Vsupply = +12 V Vsupply = -12 V 4 (see Note 6) IG = 0 TC = 110C VDRM = Rated VDRM ITRM = 8.4 A TC = 70C 2 V V mA mA -2 VDRM = Rated VDRM UNIT 20 V/s 5 V/s All voltages are with respect to Main Terminal 1. NOTES: 5. This parameter must be measured using pulse techniques, t p = 1 ms, duty cycle 2 %. Voltage-sensing contacts separate from the current carrying contacts are located within 3.2 mm from the device body. 6. The triacs are triggered by a 15-V (open-circuit amplitude) pulse supplied by a generator with the following characteristics: R G = 100 , tp(g) = 20 s, tr = 15 ns, f = 1 kHz. thermal characteristics PARAMETER RJC Junction to case thermal resistance RJA Junction to free air thermal resistance MIN 2 TYP MAX UNIT 2.5 C/W 62.5 C/W DECEMBER 1971 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice.