TIC216 SERIES
SILICON TRIACS
1
DECEMBER 1971 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
●Sensitive Gate Triacs
●6 A RMS
●Glass Passivated Wafer
●400 V to 800 V Off-State Voltage
●Max IGT of 5 mA (Quadrants 1 - 3)
absolute maximum ratings over operating case temperature (unless otherwise noted)
NOTES: 1. These values apply bidirectionally for any value of resistance between the gate and Main Terminal 1.
2. This value applies for 50-Hz full-sine-wave operation with resistive load. Above 70°C derate linearly to 110°C case temperature at
the rate of 150 mA/°C.
3. This value applies for one 50-Hz full-sine-wave when the device is operating at (or below) the rated value of on-state current. Surge
may be repeated after the device has returned to original thermal equilibrium. During the surge, gate control may be lost.
4. This value applies for a maximum averaging time of 20 ms.
RATING SYMBOL VALUE UNIT
Repetitive peak off-state voltage (see Note 1)
TIC216D
TIC216M
TIC216S
TIC216N
VDRM
400
600
700
800
V
Full-cycle RMS on-state current at (or below) 70°C case temperature (see Note 2) IT(RMS) 6 A
Peak on-state surge current full-sine-waveat (or below) 25°C case temperature (see Note 3) ITSM 60 A
Peak gate current IGM ±1 A
Peak gate power dissipation at (or below) 85°C case temperature (pulse width ≤ 200 µs) PGM 2.2 W
Average gate power dissipation at (or below) 85°C case temperature (see Note 4) PG(AV) 0.9 W
Operating case temperature range TC-40 to +110 °C
Storage temperature range Tstg -40 to +125 °C
Lead temperature 1.6 mm from case for 10 seconds TL230 °C
electrical characteristics at 25°C case temperature (unless otherwise noted )
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
IDRM
Repetitive peak
off-state current VD = rated VDRM IG = 0 TC = 110°C ±2 mA
IGT
Gate trigger
current
Vsupply = +12 V†
Vsupply = +12 V†
Vsupply = -12 V†
Vsupply = -12 V†
RL = 10 Ω
RL = 10 Ω
RL = 10 Ω
RL = 10 Ω
tp(g) > 20 µs
tp(g) > 20 µs
tp(g) > 20 µs
tp(g) > 20 µs
5
-5
-5
10
mA
† All voltages are with respect to Main Terminal 1.
MT1
MT2
G
TO-220 PACKAGE
(TOP VIEW)
Pin 2 is in electrical contact with the mounting base.
MDC2ACA
1
2
3
TIC216 SERIES
SILICON TRIACS
2
DECEMBER 1971 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
† All voltages are with respect to Main Terminal 1.
NOTES: 5. This parameter must be measured using pulse techniques, tp = ≤ 1 ms, duty cycle ≤ 2 %. Voltage-sensing contacts separate from
the current carrying contacts are located within 3.2 mm from the device body.
6. The triacs are triggered by a 15-V (open-circuit amplitude) pulse supplied by a generator with the following characteristics:
RG = 100 Ω, tp(g) = 20 µs, tr = ≤ 15 ns, f = 1 kHz.
VGT
Gate trigger
voltage
Vsupply = +12 V†
Vsupply = +12 V†
Vsupply = -12 V†
Vsupply = -12 V†
RL = 10 Ω
RL = 10 Ω
RL = 10 Ω
RL = 10 Ω
tp(g) > 20 µs
tp(g) > 20 µs
tp(g) > 20 µs
tp(g) > 20 µs
2.2
-2.2
-2.2
3
V
VTOn-state voltage IT = ±8.4 A IG = 50 mA (see Note 5) ±1.7 V
IHHolding current Vsupply = +12 V†
Vsupply = -12 V†
IG = 0
IG = 0
Init’ ITM = 100 mA
Init’ ITM = -100 mA
30
-30 mA
ILLatching current Vsupply = +12 V†
Vsupply = -12 V† (see Note 6) 4
-2 mA
dv/dt Critical rate of rise of
off-state voltage VDRM = Rated VDRM IG = 0 TC = 110°C ±20 V/µs
dv/dt(c)
Critical rise of
commutation voltage VDRM = Rated VDRM ITRM = ±8.4 A TC = 70°C ±2 ±5 V/µs
thermal characteristics
PARAMETER MIN TYP MAX UNIT
RθJC Junction to case thermal resistance 2.5 °C/W
RθJA Junction to free air thermal resistance 62.5 °C/W
electrical characteristics at 25°C case temperature (unless otherwise noted) (continued)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
