Radar Pulsed Power Transistor
20W, 2.7-3.1 GHz, 100µs Pulse, 10% Duty M/A-COM Products
Released, 29 Jun 07
PH2731-20M
1 North America Tel: 800.366.2266 / Fax: 978.366.2266
Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300
Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298
Visit www.macomtech.com for additional data sheets and prod uct information.
M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make
changes to the product(s) or information contained herein without notice.
ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions
is considering for development. Performance is based on target specifications, simulated results,
and/or prototype measurements. Commitment to develop is not guaranteed.
PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology
Solutions has under development. Performance is based on engineering tests. Specifications are
typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available.
Commitment to produce in volume is not guaranteed.
Features
NPN silicon microwave p ower transistors
Common base configuration
Broadband Class C op eration
High efficiency inter-digitized geometry
Diffused emitter ballasting resistors
Gold metallization system
Internal input and output impedance matching
Hermetic metal/ceramic package
RoHS compliant
Electrical Specifications: TC = 25 ± 5°C (Room Ambient )
Parameter Test Conditions Frequency Symbol Min Max Units
Collector-Emitter Breakdown Voltage IC = 10mA BVCES 65 - V
Collector-Emitter Leakage Current VCE = 40V ICES - 1.5 mA
Thermal Resistance Vcc = 36V, Pin = 3.0W F = 2.7, 2.9, 3.1 GHz RTH(JC) - 2.5 °C/W
Output Power Vcc = 36V, Pin = 3.0W F = 2.7, 2.9, 3.1 GHz POUT 20 - W
Power Gain Vcc = 36V, Pin = 3.0W F = 2.7, 2.9, 3.1 GHz GP 8.2 - dB
Collector Efficiency Vcc = 36V, Pin = 3.0W F = 2.7, 2.9, 3.1 GHz ηC 45 - %
Input Return Loss Vcc = 36V, Pin = 3.0W F = 2.7, 2.9, 3.1 GHz RL - -6 dB
Load Mismatch Tolerance Vcc = 36V, Pin = 3.0W F = 2.7, 2.9, 3.1 GHz VSWR-T - 3:1 -
Load Mismatch Stability Vcc = 36V, Pin = 3.0W F = 2.7, 2.9, 3.1 GHz VSWR-S - 1.5:1 -
Absolute Maximum Ratings at 25°C
Parameter Symbol Rating Units
Collector-Emitter Voltage VCES 65 V
Emitter-Base Voltage VEBO 3.0 V
Collector Current (Peak) IC 1.85 A
Power Dissipation @ +25°C PTOT 70 W
Storage Temperature TSTG -65 to +200 °C
Junction Temperature TJ 200 °C
Outline Drawing
Radar Pulsed Power Transistor
20W, 2.7-3.1 GHz, 100µs Pulse, 10% Duty M/A-COM Products
Released, 29 Jun 07
PH2731-20M
2 North America Tel: 800.366.2266 / Fax: 978.366.2266
Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300
Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298
Visit www.macomtech.com for additional data sheets and prod uct information.
M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make
changes to the product(s) or information contained herein without notice.
ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions
is considering for development. Performance is based on target specifications, simulated results,
and/or prototype measurements. Commitment to develop is not guaranteed.
PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology
Solutions has under development. Performance is based on engineering tests. Specifications are
typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available.
Commitment to produce in volume is not guaranteed.
Typical RF Performance
F (GHz) ZIF () ZOF ()
2.7 38.0 - j14.4 17.1 - j8.7
2.9 33.0 - j17.8 13.3 - j8.3
3.1 27.0 - j19.4 10.9 - j7.4
RF Test Fixture Impedance
Gain vs. Frequency Collector Efficiency vs. Frequency
Freq.
(GHz)
Pin
(W)
Pout
(W)
Gain
(dB)
Ic
(A)
Eff
(%)
RL
(dB)
VSWR-S
(1.5:1)
VSWR-T
(3:1)
2.7 3.0 26.6 9.48 1.56 47.4 -12.3 S P
2.9 3.0 24.0 9.03 1.40 47.5 -16.6 S P
3.1 3.0 23.1 8.87 1.28 50.3 -21.0 S P
7.6
8.2
8.8
9.4
10.0
2.7 2.8 2.9 3.0 3.1
Fr e q (GHz)
Gain (dB)
41
45
49
53
57
2.7 2.8 2.9 3.0 3.1
Fr e q (GHz )
Efficiency (%)
Radar Pulsed Power Transistor
20W, 2.7-3.1 GHz, 100µs Pulse, 10% Duty M/A-COM Products
Released, 29 Jun 07
PH2731-20M
3 North America Tel: 800.366.2266 / Fax: 978.366.2266
Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300
Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298
Visit www.macomtech.com for additional data sheets and prod uct information.
M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make
changes to the product(s) or information contained herein without notice.
ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions
is considering for development. Performance is based on target specifications, simulated results,
and/or prototype measurements. Commitment to develop is not guaranteed.
PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology
Solutions has under development. Performance is based on engineering tests. Specifications are
typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available.
Commitment to produce in volume is not guaranteed.
Test Fixture Circuit Dimensions
Test Fixture Assembly