ZXMS6004DN8 ADVANCE INFORMATION 60V N-CHANNEL SELF PROTECTED ENHANCEMENT MODE (R) INTELLIFET MOSFET Product Summary Features and Benefits Continuos Drain-Source Voltage: 60V On-State Resistance: 500m Nominal Load Current (VIN = 5V): 1.3A Clamping Energy: 120mJ Description The ZXMS6004DN8 is a dual self-protected low side MOSFET with logic level input. It integrates over-temperature, overcurrent, overvoltage (active clamp) and ESD protected logic level functionality. The ZXMS6004DN8 is ideal as a general purpose switch driven from 3.3V or 5V microcontrollers in harsh environments where standard MOSFETs are not rugged enough. Low Input Current Logic Level Input (3.3V and 5V) Short Circuit Protection with Auto Restart Overvoltage Protection (Active Clamp) Thermal Shutdown with Auto Restart Overcurrent Protection Input Protection (ESD) High Continuous Current Rating Totally Lead-Free; RoHS compliant (Notes 1 & 2) Halogen and Antimony Free. "Green" Device (Note 3) Applications Mechanical Data Lamp Driver Motor Driver Relay Driver Solenoid Driver Case: SO-8 Case Material: Molded Plastic, "Green" Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminals: Matte Tin Finish Weight: 79.1 mg (Approximate) SO-8 D1 IN1 D2 IN2 S1 S1 D1 IN1 D1 S2 D2 IN2 D2 S2 Top View Pin-Out Device Symbol Top View Ordering Information (Note 4) Product ZXMS6004DN8-13 Notes: Marking 6004DN8 Reel size (inches) 13 Tape width (mm) 12 Quantity per reel 2,500 units 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU. 2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated's definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green" products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. For packaging details, go to our website at http://www.diodes.com/products/packages.html. Marking Information 6004DN8 = Product name Logo Part No. 6004DN8 YY WW Pin 1. YY: Year WW: Week: 01~52; 52 represents 52 and 53 week Top View IntelliFET is a registered trademark of Diodes Incorporated. ZXMS6004DN8 Document number: DS38040 Rev. 2 - 2 1 of 9 www.diodes.com August 2015 (c) Diodes Incorporated ZXMS6004DN8 ADVANCE INFORMATION Functional Block Diagram Application Information Two completely isolated independent channels Especially suited for loads with a high in-rush current such as lamps and motors All types of resistive, inductive and capacitive loads in switching applications C compatible power switch for 12V and 24V DC applications Replaces electromechanical relays and discrete circuits Linear Mode Capability -- the current-limiting protection circuitry is designed to deactivate at low VDS to minimize on-state power dissipation The maximum DC operating current is therefore determined by the thermal capability of the package or board combination, rather than by the protection circuitry. This does not compromise the product's ability to self-protect at low VDS Absolute Maximum Ratings (@TA = +25C, unless otherwise stated.) Characteristic Symbol Value Units VDS 60 V VDS(SC) 36 V VIN -0.5 to +6 V Continuous Input Current @ -0.2V VIN 6V Continuous Input Current @VIN < -0.2V or VIN > 6V IIN No limit IIN 2 mA Pulsed Drain Current @VIN = 3.3V IDM 2 A Pulsed Drain Current @VIN = 5V IDM 2.5 A IS 1 A Pulsed Source Current (Body Diode) ISM 5 A Unclamped Single Pulse Inductive Energy, TJ = +25C, ID = 0.5A, VDD = 24V EAS 120 mJ Electrostatic Discharge (Human Body Model) VHBM 4,000 V Charged Device Model VCDM 1,000 V Continuous Drain-Source Voltage Drain-Source Voltage For Short Circuit Protection Continuous Input Voltage Continuous Source Current (Body Diode) (Note 5) ZXMS6004DN8 Document number: DS38040 Rev. 2 - 2 2 of 9 www.diodes.com August 2015 (c) Diodes Incorporated ZXMS6004DN8 ADVANCE INFORMATION Thermal Characteristics Characteristic Power Dissipation at Tamb = +25C (Note 5) Linear Derating Factor Power Dissipation at Tamb = +25C (Note 6) Linear Derating Factor Thermal Resistance, Junction to Ambient (Note 5) Thermal Resistance, Junction to Ambient (Note 6) Thermal Resistance, Junction to Case (Note 7) Operating Temperature Range Storage Temperature Range Notes: Symbol PD PD RJA RJA RJC TJ TSTG Value 1.21 9.7 1.56 12.5 103 81 13.5 -40 to +150 -55 to +150 Units W mW/C W mW/C C/W C/W C/W C C 5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout 6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1-inch square copper plate. 7. Thermal resistance between junction and the mounting surfaces of drain and source pins. Recommended Operating Conditions The ZXMS6004DN8 is optimized for use with C operating from 3.3V and 5V supplies. Symbol Min Max Input Voltage Range Characteristic VIN 0 5.5 V Ambient Temperature Range TA -40 +125 C High Level Input Voltage for MOSFET to be On VIH 3 5.5 V Low Level Input Voltage for MOSFET to be Off VIL 0 0.7 V Peripheral Supply Voltage (voltage to which load is referred) VP 0 36 V ZXMS6004DN8 Document number: DS38040 Rev. 2 - 2 3 of 9 www.diodes.com Unit August 2015 (c) Diodes Incorporated ZXMS6004DN8 10 2.50 Id, Drain Current (A) Id(A) @ DC IF(A)-MRP(1) Id(A) @Pw=1s Id(A) @Pw=100 ms Rds(on) Limited Id(A) @Pw=10 ms Id(A) @Pw=1ms Id(A) @Pw=100 us 0.1 Tj,(Max)=150 Ta=25, Vgs=5V Single Pulse 0.01 0.1 1 10 IF, DC Forward Current(A) Id(A) @Pw=10s 1 2.00 IF(A)-1 inch(2) 1.50 1.00 0.50 0.00 0 25 50 75 100 125 150 100 TA, Ambient Temperature () Vds, Drain-Source Voltage (V) SOA, Safe Operation Area Figure. DC Forward Current Derating 1 800 r(t) @ D=0.9 r(t) @ D=0.7 r(t) @ D=0.5 0.1 r(t) @ D=0.3 r(t) @ D=0.1 r(t) @ D=0.05 r(t) @ D=0.02 r(t) @ D=0.01 0.01 r(t) @ D=0.005 r(t) @ D=Single Pulse Rthja(t)=r(t) * Rthja Rthja=108C/W P(pk), Peak Transient Power (W) r(t), Transient Thermal Resistance ADVANCE INFORMATION Thermal Characteristics (Continued) Single Pulse Rthja=108C/W Rthja(t)=Rthja * r(t) Tj-Ta=P * Rthja (t) 700 600 500 400 300 200 100 Duty Cycle, D=t1 / t2 0.001 0 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 0.1 1 10 100 1000 Figure 1: Pulse Power Dissipation Figure: Transient Thermal Resistance Document number: DS38040 Rev. 2 - 2 0.01 t1, Pulse Duration Time (sec) t1, Pulse Duration Time (sec) ZXMS6004DN8 0.00001 0.0001 0.001 4 of 9 www.diodes.com August 2015 (c) Diodes Incorporated ZXMS6004DN8 ADVANCE INFORMATION Electrical Characteristics (@TA = +25C, unless otherwise specified.) Characteristic Static Characteristics Symbol Min Typ Max Unit Drain-Source Clamp Voltage VDS(AZ) 60 65 70 V -- -- 1 -- -- 2 0.7 1 1.5 -- 60 100 -- 120 200 -- -- 300 -- 400 600 -- 350 500 0.9 -- -- 1.0 -- -- 1.1 -- -- 1.2 -- -- 0.7 1.7 -- 1 2.2 -- td(on) -- 5 -- s Off-State Drain Current IDSS Input Threshold Voltage VIN(th) Input Current IIN Input Current while Over-Temperature Active -- Static Drain-Source On-State Resistance RDS(ON) Continuous Drain Current (Notes 5) ID Continuous Drain Current (Note 5) Current Limit (Note 8) ID(LIM) A V A A m Test Condition ID = 10mA VDS = 12V, VIN = 0V VDS = 36V, VIN = 0V VDS = VGS, ID = 1mA VIN = +3V VIN = +5V VIN = +5V VIN = +3V, ID = 1A VIN = +5V, ID = 1A VIN = 3V; TA = +25C A VIN = 5V; TA = +25C VIN = 3V; TA = +25C VIN = 5V; TA = +25C A VIN = +3V VIN = +5V Dynamic Characteristics Turn On Delay Time Rise Time Turn Off Delay Time Fall Time tr -- 10 -- s td(off) -- 45 -- s ff -- 15 -- s TJT +150 +175 -- C -- ff -- +10 -- C -- VDD = 12V, ID = 0.5A, VGS = 5V Over-Temperature Protection Thermal Overload Trip Temperature (Note 9) Thermal Hysteresis (Note 9) Notes: 8. The drain current is restricted only when the device is in saturation (see graph "Typical Output Characteristic"). This allows the device to be used in the on state without interference from the current limit. The device is fully protected at all drain currents, as the low power dissipation generated outside saturation makes current limit unnecessary. 9. Over-temperature protection is designed to prevent device destruction under fault conditions. Fault conditions are considered as "outside" normal operating range, so this part is not designed to withstand over-temperature for extended periods. ZXMS6004DN8 Document number: DS38040 Rev. 2 - 2 5 of 9 www.diodes.com August 2015 (c) Diodes Incorporated ZXMS6004DN8 ADVANCE INFORMATION Typical Characteristics ZXMS6004DN8 Document number: DS38040 Rev. 2 - 2 6 of 9 www.diodes.com August 2015 (c) Diodes Incorporated ZXMS6004DN8 Drain-Source Voltage (V) Drain-Source Voltage (V) 12 ID=1A 10 VDS 8 6 VIN 4 2 0 -50 0 50 100 150 200 250 300 12 ID=1A VDS 10 8 6 4 VIN 2 0 -50 0 50 100 150 200 250 300 Time (s) Time (s) Switching Speed Switching Speed ID Drain Current (A) ADVANCE INFORMATION Typical Characteristics (Continued) VIN = 5V 8 VDS = 15V RD = 0 6 4 2 0 0 5 10 15 Time (ms) Typical Short Circuit Protection ZXMS6004DN8 Document number: DS38040 Rev. 2 - 2 7 of 9 www.diodes.com August 2015 (c) Diodes Incorporated ZXMS6004DN8 Package Outline Dimensions SO-8 0.254 ADVANCE INFORMATION Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for the latest version. E1 E SO-8 Dim Min Max A -- 1.75 A1 0.10 0.20 A2 1.30 1.50 A3 0.15 0.25 b 0.3 0.5 D 4.85 4.95 E 5.90 6.10 E1 3.85 3.95 e 1.27 Typ h -- 0.35 L 0.62 0.82 0 8 All Dimensions in mm Gauge Plane Seating Plane A1 L Detail `A' 7~9 h 45 Detail `A' A2 A A3 b e D Suggested Pad Layout Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version. SO-8 X Dimensions X Y C1 C2 Value (in mm) 0.60 1.55 5.4 1.27 C1 C2 Y ZXMS6004DN8 Document number: DS38040 Rev. 2 - 2 8 of 9 www.diodes.com August 2015 (c) Diodes Incorporated ZXMS6004DN8 ADVANCE INFORMATION IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 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LIFE SUPPORT Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: A. Life support devices or systems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems. Copyright (c) 2015, Diodes Incorporated www.diodes.com ZXMS6004DN8 Document number: DS38040 Rev. 2 - 2 9 of 9 www.diodes.com August 2015 (c) Diodes Incorporated